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71. 发明授权

US6095635A Discharged ink treating method, recovery device for carrying out the same and ink discharge device 失效
标题翻译：排出的油墨处理方法，用于进行相同的回收装置和喷墨装置
公开(公告)号：US6095635A
公开(公告)日：2000-08-01
申请号：US801420
申请日：1997-02-18
申请人： Hiroyuki Kinoshita , Tetsuo Suzuki , Masahiro Taniguro , Hiroyuki Saito , Koichi Tanno , Haruyuki Yanagi , Makoto Kawarama , Masaya Shinmachi , Tan At Ming
发明人： Hiroyuki Kinoshita , Tetsuo Suzuki , Masahiro Taniguro , Hiroyuki Saito , Koichi Tanno , Haruyuki Yanagi , Makoto Kawarama , Masaya Shinmachi , Tan At Ming
IPC分类号： B41J2/18 , B41J2/165 , B41J2/175 , B41J2/185 , B41J23/02
CPC分类号： B41J2/16526 , B41J2/1652 , B41J2/16541 , B41J2002/1742
摘要： This invention provides a discharged ink treating method for destroying or dispersing ink deposit created on a discharged ink receiving portion side, by the use of a mechanically operated member. A method of treating discharged ink from an ink using portion using liquid ink has the step of destroying or dispersing ink deposit created in a discharged ink path along which the discharged ink passes from the ink using portion to a discharged ink receiving portion and on the discharged ink receiving portion side, by the use of a mechanically operated member.
摘要翻译：本发明提供了一种通过使用机械操作的构件来破坏或分散在排出的油墨接收部分侧上产生的油墨沉积物的排出的油墨处理方法。使用液体油墨从油墨使用部分处理排出的油墨的方法具有以下步骤：将排出的油墨通过的排出油墨路径从油墨使用部分排出到排出的油墨接收部分，并且排出油墨接收部分侧，通过使用机械操作的构件。

72. 发明授权

US5784082A Information processing apparatus, and head member mountable on such information processing apparatus 失效
标题翻译：信息处理装置和可安装在这种信息处理装置上的头部构件
公开(公告)号：US5784082A
公开(公告)日：1998-07-21
申请号：US509945
申请日：1995-08-01
申请人： Masaya Shinmachi , Tetsuo Suzuki , Masahiro Taniguro , Hiroyuki Saito , Koichi Tanno , Haruyuki Yanagi , Makoto Kawarama , Hiroyuki Kinoshita , Tan At Ming
发明人： Masaya Shinmachi , Tetsuo Suzuki , Masahiro Taniguro , Hiroyuki Saito , Koichi Tanno , Haruyuki Yanagi , Makoto Kawarama , Hiroyuki Kinoshita , Tan At Ming
IPC分类号： B41J2/01 , B41J2/175 , B41J25/304 , B41J25/34 , B41J2/14
CPC分类号： B41J25/34
摘要： An information processing apparatus for executing information processing on a sheet material using a head member arranged for information processing area comprises a head mounting member for mounting a head member thereon, this head mounting member having a position for attaching and detaching the head member to and from the head mounting member, and a mounting position to mount the head member on the head mounting member by positioning the head member with respect to the head mounting member; a pressing member movably arranged on the head mounting member, this pressing member abutting upon the head member mounted on the head mounting member to cause the head member to shift from the attaching and detaching position to the mounting position by the application of pressure given to the head member; and a contact area for the pressing member and head member to abut upon each other, this contact area being arranged to reduce slide resistance to occur in the direction different from the direction in which the head member shifts from the attaching and detaching position to the mounting position. With this structure, the slide resistance to be exerted between these members, which may produce adverse effect on positioning the head member, is made extremely small in order to reliably position the head member exactly.
摘要翻译：一种信息处理装置，用于使用布置用于信息处理区域的头部件对片材进行信息处理，包括用于在其上安装头部构件的头部安装构件，该头部安装构件具有用于将头部构件附接和/ 头安装构件，以及通过将头构件相对于头安装构件定位而将头构件安装在头安装构件上的安装位置; 按压构件，可移动地布置在头部安装构件上，该按压构件邻接在安装在头部安装构件上的头部构件上，以使头部构件通过施加施加压力而从安装和拆卸位置移动到安装位置总会员以及用于按压构件和头构件彼此抵靠的接触区域，该接触区域布置成减小在与头部构件从安装和拆卸位置偏移到安装件的方向不同的方向上发生的滑动阻力位置。利用这种结构，为了可靠地精确地定位头部构件，施加在这些构件之间施加的可能对头部构件的定位产生不利影响的滑动阻力非常小。

73. 发明授权

US5725319A Sheet feeding apparatus 失效
标题翻译：送纸装置
公开(公告)号：US5725319A
公开(公告)日：1998-03-10
申请号：US886890
申请日：1997-07-02
申请人： Hiroyuki Saito , Tetsuo Suzuki , Makoto Kashimura , Masahiro Taniguro , Koichi Tanno , Haruyuki Yanagi , Tetsuhiro Nitta , Makoto Kawarama , Hiroyuki Kinoshita , Masaya Shinmachi , Tan At Ming , Kentaro Ohnuma , Seiji Ogasawara
发明人： Hiroyuki Saito , Tetsuo Suzuki , Makoto Kashimura , Masahiro Taniguro , Koichi Tanno , Haruyuki Yanagi , Tetsuhiro Nitta , Makoto Kawarama , Hiroyuki Kinoshita , Masaya Shinmachi , Tan At Ming , Kentaro Ohnuma , Seiji Ogasawara
IPC分类号： B65H3/06 , B41J11/00 , B41J13/02 , B41J13/10 , B41J13/28 , B65H1/04 , B41J13/00
CPC分类号： B41J13/103 , B41J11/0055 , B41J13/02 , B41J13/28
摘要： The present invention provides a sheet feeding apparatus comprising a sheet supporting means for supporting a sheet, a rotatable sheet supply means for feeding out the sheet supported by the sheet supporting means and a skew-feed correction means for correcting a skew-feed of the sheet by rotating the sheet in a plane including a surface of the sheet while the sheet is being fed by the rotatable sheet supply means.
摘要翻译：本发明提供了一种片材进给装置，包括用于支撑片材的片材支撑装置，用于馈送由片材支撑装置支撑的片材的可旋转片材供给装置和用于校正片材的歪斜进给的歪斜进给校正装置通过在片材被可旋转片材供给装置供给的同时在包括片材的表面的平面中旋转片材。

74. 发明授权

US5580042A Sheet conveying apparatus 失效
标题翻译：纸张输送装置
公开(公告)号：US5580042A
公开(公告)日：1996-12-03
申请号：US507066
申请日：1995-07-26
申请人： Masahiro Taniguro , Tetsuo Suzuki , Soichi Hiramatsu , Hiroyuki Saito , Haruyuki Yanagi , Takashi Nojima , Satoshi Saikawa , Hiroyuki Kinoshita , Hideaki Kawakami
发明人： Masahiro Taniguro , Tetsuo Suzuki , Soichi Hiramatsu , Hiroyuki Saito , Haruyuki Yanagi , Takashi Nojima , Satoshi Saikawa , Hiroyuki Kinoshita , Hideaki Kawakami
IPC分类号： B41J11/00 , B41J13/02 , B41J13/10 , B41J13/20 , B65H5/02
CPC分类号： B41J13/02 , B41J11/005 , B41J13/10 , B41J13/20 , Y10S271/902
摘要： The present invention provides a sheet conveying apparatus comprising a convey roller for conveying a sheet; a plurality of pinch rollers arranged along the convey roller and adapted to urge the sheet against the convey roller; a pinch roller holder formed as one piece for supporting the plurality of pinch rollers, the rigidity of the pinch roller holder in a sheet conveying direction being greater than the rigidity of the pinch roller holder in a direction perpendicular to the sheet conveying direction; and a biasing means for acting on the pinch roller holder to urge the pinch rollers against the convey roller.
摘要翻译：本发明提供了一种片材输送装置，包括用于输送片材的输送辊; 沿着所述输送辊布置的多个夹送辊，并且适于将所述纸张推靠在所述输送辊上; 夹持辊保持器形成为一体以支撑多个夹送辊，压纸辊保持器在纸张输送方向上的刚性大于夹送辊保持器在垂直于纸张输送方向的方向上的刚性; 以及用于作用在夹送辊保持器上以将夹送辊推压到输送辊上的偏压装置。

75. 发明授权

US09159568B2 Method for fabricating memory cells having split charge storage nodes 有权
标题翻译：用于制造具有分离电荷存储节点的存储单元的方法
公开(公告)号：US09159568B2
公开(公告)日：2015-10-13
申请号：US11639666
申请日：2006-12-15
申请人： Chungho Lee , Wei Zheng , Chi Chang , Unsoon Kim , Hiroyuki Kinoshita
发明人： Chungho Lee , Wei Zheng , Chi Chang , Unsoon Kim , Hiroyuki Kinoshita
IPC分类号： H01L21/28 , H01L29/66 , H01L29/10 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L21/28282 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/1037 , H01L29/1083 , H01L29/42332 , H01L29/42348 , H01L29/66537 , H01L29/7887 , H01L29/7923
摘要： Memory cells having split charge storage nodes and methods for fabricating memory cells having split charge storage nodes are disclosed. A disclosed method includes forming a first trench and an adjacent second trench in a semiconductor substrate, the first trench and the second trench each defining a first sidewall and a second sidewall respectively and forming a first source/drain region in the substrate and a second source/drain region in the substrate, where the first source/drain region and the second source/drain region are formed substantially under the first trench and the second trench in the semiconductor substrate respectively. Moreover, a method includes forming a bit line punch through barrier in the substrate between the first source/drain region and the second source drain region and forming a first storage element on the first sidewall of the first trench and a second storage element on the second sidewall of the second element. A word line is formed in contact with the first storage element and the second storage element.
摘要翻译：公开了具有分割电荷存储节点的存储单元和用于制造具有分离电荷存储节点的存储单元的方法。所公开的方法包括在半导体衬底中形成第一沟槽和相邻的第二沟槽，第一沟槽和第二沟槽分别限定第一侧壁和第二侧壁，并在衬底中形成第一源极/漏极区域，第二源极 /漏极区域，其中第一源极/漏极区域和第二源极/漏极区域分别基本上形成在半导体衬底中的第一沟槽和第二沟槽下方。此外，一种方法包括在第一源极/漏极区域和第二源极漏极区域之间的衬底中形成位线穿通阻挡层，并在第一沟槽的第一侧壁上形成第一存储元件，在第二沟槽的第二沟槽上形成第二存储元件第二元件的侧壁。形成与第一存储元件和第二存储元件接触的字线。

76. 发明授权

US08603890B2 Air gap isolation in non-volatile memory 有权
标题翻译：非易失性存储器中的气隙隔离
公开(公告)号：US08603890B2
公开(公告)日：2013-12-10
申请号：US13162475
申请日：2011-06-16
申请人： Vinod Robert Purayath , George Matamis , Eli Harari , Hiroyuki Kinoshita , Tuan Pham
发明人： Vinod Robert Purayath , George Matamis , Eli Harari , Hiroyuki Kinoshita , Tuan Pham
IPC分类号： H01L21/76
CPC分类号： H01L21/764 , H01L27/11521 , H01L27/11524 , H01L27/11568
摘要： Air gap isolation in non-volatile memory arrays and related fabrication processes are provided. Electrical isolation between adjacent active areas of a substrate can be provided, at least in part, by bit line air gaps that are elongated in a column direction between the active areas. At least one cap is formed over each isolation region, at least partially overlying air to provide an upper endpoint for the corresponding air gap. The caps may be formed at least partially along the sidewalls of adjacent charge storage regions. In various embodiments, selective growth processes are used to form capping strips over the isolation regions to define the air gaps. Word line air gaps that are elongated in a row direction between adjacent rows of storage elements are also provided.
摘要翻译：提供了非易失性存储器阵列中的气隙隔离和相关制造工艺。至少部分地可以通过在活动区域之间沿列方向延伸的位线空气间隙来提供衬底的相邻有源区域之间的电隔离。在每个隔离区域上形成至少一个盖，至少部分地覆盖空气以提供相应气隙的上端点。帽可以至少部分地沿着相邻的电荷存储区域的侧壁形成。在各种实施方案中，选择性生长过程用于在隔离区域上形成封盖条以限定气隙。还提供了在相邻行存储元件之间沿行方向延伸的字线气隙。

77. 发明授权

US08564042B2 Dual storage node memory 有权
标题翻译：双存储节点存储器
公开(公告)号：US08564042B2
公开(公告)日：2013-10-22
申请号：US11702845
申请日：2007-02-05
申请人： Fred Cheung , Hiroyuki Kinoshita , Chungho Lee , Yu Sun , Chi Chang
发明人： Fred Cheung , Hiroyuki Kinoshita , Chungho Lee , Yu Sun , Chi Chang
IPC分类号： H01L29/94
CPC分类号： H01L29/66833 , G11C16/0475 , G11C16/3418 , G11C16/3427 , H01L27/115 , H01L27/11521
摘要： An embodiment of the present invention is directed to a memory cell. The memory cell includes a first charge storage element and a second charge storage element, wherein the first and second charge storage elements include nitrides. The memory cell further includes an insulating layer formed between the first and second charge storage elements. The insulating layer provides insulation between the first and second charge storage elements.
摘要翻译：本发明的实施例涉及存储单元。存储单元包括第一电荷存储元件和第二电荷存储元件，其中第一和第二电荷存储元件包括氮化物。存储单元还包括形成在第一和第二电荷存储元件之间的绝缘层。绝缘层提供第一和第二电荷存储元件之间的绝缘。

78. 发明授权

US08395677B2 Aberration correction apparatus, aberration correction method, and program 失效
标题翻译：畸变校正装置，像差校正方法和程序
公开(公告)号：US08395677B2
公开(公告)日：2013-03-12
申请号：US13226978
申请日：2011-09-07
申请人： Atsuo Kikuchi , Gentaro Irisawa , Atsuo Minato , Kenichi Nishio , Hyongmyong Kang , Hiroyuki Kinoshita , Tsukasa Hashino
发明人： Atsuo Kikuchi , Gentaro Irisawa , Atsuo Minato , Kenichi Nishio , Hyongmyong Kang , Hiroyuki Kinoshita , Tsukasa Hashino
IPC分类号： H04N5/228 , H04N9/73 , H04N5/262 , H04N9/64 , H04N9/74 , G06K9/00
CPC分类号： H04N9/045
摘要： An aberration correction apparatus includes: a correction data holding section that holds correction data on a correction level used to correct chromatic aberration of magnification; a center position discrepancy data holding section that holds center position discrepancy data on the discrepancy between the center of an image area and the position of an aberration center of the chromatic aberration of magnification; an aberration center calculating section that selects one of the center position discrepancy data that corresponds to a combination of the discrepancy variation conditions in an imaging apparatus and calculates the position of the aberration center based on the selected center position discrepancy data; an image height calculating section; a magnification chromatic aberration correction level calculating section; and a pixel value correcting section.
摘要翻译：像差校正装置包括：校正数据保持部，其保持用于校正倍率色像差的校正水平的校正数据; 中心位置偏差数据保持部分，其保持关于图像区域的中心与色像差的像差中心的位置之间的偏差的中心位置差异数据; 像差中心计算部分，选择与成像装置中的差异变化条件的组合相对应的中心位置差异数据之一，并基于所选择的中心位置差异数据计算像差中心的位置; 图像高度计算部; 倍率色像差校正电平计算部分; 和像素值校正部。

79. 发明申请

US20110309426A1 Metal Control Gate Structures And Air Gap Isolation In Non-Volatile Memory 有权
标题翻译：金属控制门结构和非易失性存储器中的空气间隙隔离
公开(公告)号：US20110309426A1
公开(公告)日：2011-12-22
申请号：US13163538
申请日：2011-06-17
申请人： Vinod Robert Purayath , Tuan Pham , Hiroyuki Kinoshita , Yuan Zhang , Henry Chin , James K. Kai , Takashi W. Orimoto , George Matamis , Henry Chien
发明人： Vinod Robert Purayath , Tuan Pham , Hiroyuki Kinoshita , Yuan Zhang , Henry Chin , James K. Kai , Takashi W. Orimoto , George Matamis , Henry Chien
IPC分类号： H01L29/788 , H01L21/336 , H01L21/764
CPC分类号： H01L27/11517 , H01L21/28273 , H01L21/764 , H01L21/7682 , H01L27/11519 , H01L27/11521 , H01L29/66825
摘要： High-density semiconductor memory utilizing metal control gate structures and air gap electrical isolation between discrete devices in these types of structures are provided. During gate formation and definition, etching the metal control gate layer(s) is separated from etching the charge storage layer to form protective sidewall spacers along the vertical sidewalls of the metal control gate layer(s). The sidewall spacers encapsulate the metal control gate layer(s) while etching the charge storage material to avoid contamination of the charge storage and tunnel dielectric materials. Electrical isolation is provided, at least in part, by air gaps that are formed in the row direction and/or air gaps that are formed in the column direction.
摘要翻译：提供了利用这些类型结构中的分立器件之间的金属控制栅极结构和气隙电隔离的高密度半导体存储器。在栅极形成和定义期间，蚀刻金属控制栅极层与蚀刻电荷存储层分离，以形成沿着金属控制栅极层的垂直侧壁的保护性侧壁间隔物。侧壁间隔物在蚀刻电荷存储材料时封装金属控制栅极层，以避免电荷存储和隧道介电材料的污染。至少部分地通过在行方向上形成的气隙和/或沿列方向形成的气隙提供电隔离。

80. 发明申请

US20110309425A1 Air Gap Isolation In Non-Volatile Memory 有权
标题翻译：非易失性存储器中的空气间隙隔离
公开(公告)号：US20110309425A1
公开(公告)日：2011-12-22
申请号：US13162475
申请日：2011-06-16
申请人： Vinod Robert Purayath , George Matamis , Eli Harari , Hiroyuki Kinoshita , Tuan Pham
发明人： Vinod Robert Purayath , George Matamis , Eli Harari , Hiroyuki Kinoshita , Tuan Pham
IPC分类号： H01L29/788 , H01L21/764
CPC分类号： H01L21/764 , H01L27/11521 , H01L27/11524 , H01L27/11568
摘要： Air gap isolation in non-volatile memory arrays and related fabrication processes are provided. Electrical isolation between adjacent active areas of a substrate can be provided, at least in part, by bit line air gaps that are elongated in a column direction between the active areas. At least one cap is formed over each isolation region, at least partially overlying air to provide an upper endpoint for the corresponding air gap. The caps may be formed at least partially along the sidewalls of adjacent charge storage regions. In various embodiments, selective growth processes are used to form capping strips over the isolation regions to define the air gaps. Word line air gaps that are elongated in a row direction between adjacent rows of storage elements are also provided.
摘要翻译：提供了非易失性存储器阵列中的气隙隔离和相关制造工艺。至少部分地可以通过在活动区域之间沿列方向延伸的位线空气间隙来提供衬底的相邻有源区域之间的电隔离。在每个隔离区域上形成至少一个盖，至少部分地覆盖空气以提供相应气隙的上端点。帽可以至少部分地沿着相邻的电荷存储区域的侧壁形成。在各种实施方案中，选择性生长过程用于在隔离区域上形成封盖条以限定气隙。还提供了在相邻行存储元件之间沿行方向延伸的字线气隙。

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