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71. 发明申请

US20060091469A1 Dual-gate structure and method of fabricating integrated circuits having dual-gate structures 有权
标题翻译：双栅极结构和制造具有双栅极结构的集成电路的方法
公开(公告)号：US20060091469A1
公开(公告)日：2006-05-04
申请号：US11303530
申请日：2005-12-16
申请人： Tuo-Hung Ho , Ming-Fang Wang , Chi-Chun Chen , Chih-Wei Yang , Liang-Gi Yao , Chih-Chang Chen
发明人： Tuo-Hung Ho , Ming-Fang Wang , Chi-Chun Chen , Chih-Wei Yang , Liang-Gi Yao , Chih-Chang Chen
IPC分类号： H01L29/94
CPC分类号： H01L21/823462 , H01L21/31111 , H01L29/513 , H01L29/517
摘要： A method of fabricating a dual-gate on a substrate and an integrated circuit having a dual-gate structure are provided. A first high-K dielectric layer is formed in a first area defined for a first gate structure and in a second area defined for a second gate structure. A second high-K dielectric layer is formed in the first and second areas. The first high-K dielectric layer has a lower etch rate to an etchant relative to the second high-K dielectric layer. The second high-K dielectric layer is etched from the second area to said first high-K dielectric layer with the etchant, and a gate conductive layer is formed in the first and second areas over the second high-K dielectric layer and first high-K dielectric layer, respectively.
摘要翻译：提供了一种在衬底上制造双栅极的方法和具有双栅极结构的集成电路。第一高K电介质层形成在为第一栅极结构限定的第一区域和在为第二栅极结构限定的第二区域中。在第一和第二区域中形成第二高K电介质层。第一高K电介质层相对于第二高K电介质层具有比腐蚀剂更低的蚀刻速率。使用蚀刻剂将第二高K电介质层从第二区域蚀刻到所述第一高K电介质层，并且在第二高K电介质层上的第一和第二区域中形成栅极导电层， K电介质层。

72. 发明授权

US07030024B2 Dual-gate structure and method of fabricating integrated circuits having dual-gate structures 失效
公开(公告)号：US07030024B2
公开(公告)日：2006-04-18
申请号：US10226617
申请日：2002-08-23
申请人： Tuo-Hung Ho , Ming-Fang Wang , Chi-Chun Chen , Chih-Wei Yang , Liang-Gi Yao , Chih-Chang Chen
发明人： Tuo-Hung Ho , Ming-Fang Wang , Chi-Chun Chen , Chih-Wei Yang , Liang-Gi Yao , Chih-Chang Chen
IPC分类号： H01L21/302
CPC分类号： H01L21/823462 , H01L21/31111 , H01L29/513 , H01L29/517
摘要： A method of fabricating a dual-gate on a substrate and an integrated circuit having a dual-gate structure are provided. A first high-K dielectric layer is formed in a first area defined for a first gate structure and in a second area defined for a second gate structure. A second high-K dielectric layer is formed in the first and second areas. The first high-K dielectric layer has a lower etch rate to an etchant relative to the second high-K dielectric layer. The second high-K dielectric layer is etched from the second area to said first high-K dielectric layer with the etchant, and a gate conductive layer is formed in the first and second areas over the second high-K dielectric layer and first high-K dielectric layer, respectively.

73. 发明授权

US06765170B2 Method for single sided spot welding 有权
标题翻译：单面点焊方法
公开(公告)号：US06765170B2
公开(公告)日：2004-07-20
申请号：US10322131
申请日：2002-12-17
申请人： Chih-Chang Chen , Chi-Mou Ni , Michael Gerard Poss , Alexander Michael Turley , Daniel C. Hutchinson
发明人： Chih-Chang Chen , Chi-Mou Ni , Michael Gerard Poss , Alexander Michael Turley , Daniel C. Hutchinson
IPC分类号： B23K1114
CPC分类号： B23K11/14
摘要： A method of single sided spot welding includes the steps of providing a metal tube having a convex surface portion and providing a metal sheet for welding to the metal tube. The method also includes the steps of contacting the metal sheet with the convex surface portion of the metal tube and contacting the metal sheet with a welding electrode. The method further includes the steps of supplying power to the welding electrode for melting metal and solidifying the molten metal to form a weld nugget between the metal sheet and the metal tube.
摘要翻译：单面点焊的方法包括提供具有凸面部分的金属管和提供用于焊接到金属管的金属片的步骤。该方法还包括使金属片与金属管的凸表面部分接触并使金属片与焊接电极接触的步骤。该方法还包括以下步骤：向焊接电极提供电力以熔化金属并固化熔融金属，以在金属片和金属管之间形成焊接熔核。

74. 发明授权

US06498059B2 Method for fabricating thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US06498059B2
公开(公告)日：2002-12-24
申请号：US09815212
申请日：2001-03-22
申请人： Chih-Chang Chen , Jerry Ji-Ho Kung
发明人： Chih-Chang Chen , Jerry Ji-Ho Kung
IPC分类号： H01L2100
CPC分类号： H01L29/66742 , G02F1/1368 , G02F2001/136231 , H01L27/12 , H01L29/78618 , H01L29/78669 , H01L29/78687
摘要： A method for fabricating a thin film transistor (TFT) is provided. The method includes steps of a) providing an insulation substrate, b) forming a conductive layer on the insulation substrate, c) defining the conductive layer as a gate conducting structure by a first photolithography and etch process, d) forming a gate insulation layer, a channel layer, a junction layer, a source/drain layer and a data line layer in sequence, and etching the data line layer, the source/drain layer and the junction layer by a second photolithography and etch process to form a source/drain structure and a data line structure, and e) heat-treating the junction layer to reduce resistance between the source/drain structure and the channel layer.
摘要翻译：提供一种制造薄膜晶体管（TFT）的方法。该方法包括以下步骤：a）提供绝缘衬底，b）在绝缘衬底上形成导电层，c）通过第一光刻和蚀刻工艺将导电层限定为栅极导电结构，d）形成栅绝缘层，沟道层，接合层，源极/漏极层和数据线层，并且通过第二光刻和蚀刻工艺蚀刻数据线层，源极/漏极层和结层，以形成源极/漏极结构和数据线结构，以及e）热接合层以降低源/漏结构和沟道层之间的电阻。

75. 发明授权

US06365444B2 Process for forming polycrystalline thin film transistor liquid crystal display 有权
公开(公告)号：US06365444B2
公开(公告)日：2002-04-02
申请号：US09812106
申请日：2001-03-19
申请人： Chih-Chang Chen , Jerry Ji-Ho Kung
发明人： Chih-Chang Chen , Jerry Ji-Ho Kung
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , G02F1/136227 , G02F2202/104 , H01L27/12 , H01L29/78621
摘要： A process for forming a polycrystalline TFT LCD is provided, thereby greatly reducing the manufacturing cost and time. The process includes steps of performing a first masking procedure to define a gate conductive region, successively forming an insulation layer, an amorphous channel semiconductor layer, a catalytic layer and a doped semiconductor layer, performing a second masking procedure to remove portions of the semiconductor layer and the catalytic layer to define an electrode region, performing a thermal treatment to respectively convert the electrode region and the amorphous semiconductor channel layer into a source/drain region and a crystalline semiconductor channel layer by the catalytic layer, performing a third masking procedure to define data lines, performing a fourth masking procedure to form a contact hole, and performing a fifth masking procedure to define a transparent pixel electrode region, thereby forming the TFT.

76. 发明申请

US20220381716A1 MICROMACHINED THERMAL TIME-OF-FLIGHT FLUIDIC CONCENTRATION METERING DEVICE 有权
公开(公告)号：US20220381716A1
公开(公告)日：2022-12-01
申请号：US17330269
申请日：2021-05-25
申请人： Liji Huang , Yahong Yao , Li Chen , Chih-Chang Chen
发明人： Liji Huang , Yahong Yao , Li Chen , Chih-Chang Chen
IPC分类号： G01N25/18 , G01F15/14 , G01F1/684 , G01F1/69
摘要： The design and structure of a fluidic concentration metering device with a full dynamic range utilizing micro-machined thermal time-of-flight sensing elements is exhibited in this disclosure. With an additional identical sensing chip but packaged at the different locations in the measurement fluidic chamber with a closed conduit, the device can simultaneously measure the fluidic concentration and the fluidic flowrate. With a temperature thermistor integrated on the same micro-machined thermal sensing chip, the disclosed device will be able to provide the key processing parameters for the fluidic applications.

77. 发明申请

US20200163608A1 PHYSIOLOGICAL FLUID COLLECTION BAG WITH INSTANT DATA TRANSMISSION 审中-公开
公开(公告)号：US20200163608A1
公开(公告)日：2020-05-28
申请号：US16202407
申请日：2018-11-28
申请人： Liji Huang , Chih-Chang Chen
发明人： Liji Huang , Chih-Chang Chen
IPC分类号： A61B5/20 , A61B5/145 , A61B5/00
摘要： The design and structure of a physiological fluid collection bag with instant data transmission utilizing micromachined thermal time-of-flight flow sensing device as well as integrated pH value and density sensors for simultaneous and continuous measurement of the instant volumetric flow rate, accumulated total volume, pH value and density or specific gravity data of the collected fluid is disclosed in embodiments. The fluid collection bag includes a collection chamber and storage chamber wherein the sensing and measurement module is installed inside the storage chamber of the bag, for which it can be fully disposable. The fluid collection bag is able to metering the flow rate and instantly relay the data to the reusable data processing unit that can transmit the data to the designated data center or to the specified medical staffs.

78. 发明申请

US20180299308A1 COMPOSITE MEMS FLOW SENSOR ON SILICON-ON-INSULATOR DEVICE AND METHOD OF MAKING THE SAME 审中-公开
公开(公告)号：US20180299308A1
公开(公告)日：2018-10-18
申请号：US16017917
申请日：2018-06-25
申请人： Liji Huang , Chih-Chang Chen
发明人： Liji Huang , Chih-Chang Chen
IPC分类号： G01F1/692 , G01F1/696
CPC分类号： G01F1/692 , G01F1/6845 , G01F1/696 , G01F1/7084 , G01F7/00
摘要： The present invention disclosed a micromachined composite silicon flow sensor that is comprised of calorimetric flow sensing elements, time-of-flight sensing elements as well as independent temperature sensing element on a silicon-on-insulator device where the device layer is used for the thermal isolation membrane. The disclosed composite silicon flow sensor can measure mass flowrate, volumetric flowrate and flow medium temperature simultaneously, from which a full spectrum of flow parameters including flow pressure can be obtained. The sensor can be further used to alert any changes in physical properties of flow medium during operation. The disclosed manufacture process details the micromachining process of making such a sensor.

79. 发明授权

US08943888B2 Micromachined flow sensor integrated with flow inception detection and make of the same 有权
标题翻译：微流量传感器与流入检测集成在一起，使之相同
公开(公告)号：US08943888B2
公开(公告)日：2015-02-03
申请号：US13737784
申请日：2013-01-09
申请人： Liji Huang , Chih-Chang Chen
发明人： Liji Huang , Chih-Chang Chen
IPC分类号： G01F1/68 , G01F1/688
CPC分类号： G01F1/6888 , G01F1/6845 , G01F1/692 , G01F1/696
摘要： This invention is related to a microfabricated microelectromechanical systems (a.k.a. MEMS) silicon thermal mass flow sensor integrated with a micromachined thermopile temperature sensor as a flow inception detection sensor. The micromachined thermopile sensor is used to detect the inception of mass flow and therefore to trigger the operation of mass flow sensor from its hibernating mode. By this method, the battery-operated flow speed measuring apparatus can save great deal of electricity and significantly extend the life span of battery. A new design of micromachined thermopile sensor with serpentine shape is used to reduce the complexity of microfabrication process and to increase the flexibility and options for material selection. In order to enhance the sensitivity of the thermopile temperature sensor, a method to maximize the quantity of the junctions is provided as well.
摘要翻译：本发明涉及与微加热热电堆温度传感器集成的微加工微机电系统（即MEMS）硅热质量流量传感器，作为流入口检测传感器。微加工热电堆传感器用于检测质量流量的开始，从而触发质量流量传感器从其休眠模式的操作。通过这种方法，电池操作的流速测量装置可以节省大量的电力并显着延长电池的使用寿命。使用具有蛇形形状的微加工热电堆传感器的新设计来降低微细加工过程的复杂性，并增加材料选择的灵活性和选择。为了提高热电堆温度传感器的灵敏度，还提供了使接点数量最大化的方法。

80. 发明授权

US08794082B2 MEMS time-of-flight thermal mass flow meter 有权
标题翻译： MEMS飞行时间热质量流量计
公开(公告)号：US08794082B2
公开(公告)日：2014-08-05
申请号：US13035639
申请日：2011-02-25
申请人： Liji Huang , Xiaozhong Wu , Yahong Yao , Chih-Chang Chen
发明人： Liji Huang , Xiaozhong Wu , Yahong Yao , Chih-Chang Chen
IPC分类号： G01F1/708 , G01F1/68 , G01F1/72
CPC分类号： G01F1/7084 , G01F1/72
摘要： An apparatus comprising a micromachined (a.k.a. MEMS, Micro Electro Mechanical Systems) silicon flow sensor, a flow channel package, and a driving circuitry, which operates in a working principle of thermal time-of-flight (TOF) to measure gas or liquid flow speed, is disclosed in the present invention. The micromachining technique for fabricating this MEMS time-of-flight silicon thermal flow sensor can greatly reduce the sensor fabrication cost by batch production. This microfabrication process for silicon time-of-flight thermal flow sensors provides merits of small feature size, low power consumption, and high accuracy compared to conventional manufacturing methods. Thermal time-of-flight technology in principle can provide accurate flow speed measurements for gases regardless of its gas compositions. In addition, the present invention further discloses the package design and driving circuitry which is utilized by the correlated working principle.
摘要翻译：一种包括微加工（也称为MEMS，微机电系统）硅流量传感器，流动通道封装和驱动电路的装置，其以热时间飞行（TOF）的工作原理工作以测量气体或液体流量速度，在本发明中公开。用于制造这种MEMS飞行时间硅热流量传感器的微加工技术可以通过批量生产大大降低传感器制造成本。与传统的制造方法相比，这种用于硅时间飞行热流传感器的微加工工艺具有小特征尺寸，低功耗和高精度的优点。原理上，热时间飞行技术可以为气体提供准确的流速测量，无论其气体成分如何。此外，本发明还公开了通过相关工作原理利用的封装设计和驱动电路。

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