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71. 发明授权

US07805828B2 Method of manufacturing thin-film magnetic head 有权
标题翻译：制造薄膜磁头的方法
公开(公告)号：US07805828B2
公开(公告)日：2010-10-05
申请号：US11752888
申请日：2007-05-23
申请人： Koji Shimazawa , Yoshihiro Tsuchiya
发明人： Koji Shimazawa , Yoshihiro Tsuchiya
IPC分类号： G11B5/187 , C21D1/04
CPC分类号： G11B5/3912 , G11B5/3932 , Y10T29/49021 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T428/1107
摘要： A method of manufacturing a thin-film magnetic head including forming the first shield layer; forming the magnetoresistive device, carried out after forming the first shield layer, a heat treatment providing exchange coupling between the ferromagnetic layer and the antiferromagnetic layer so as to magnetize the ferromagnetic layer in a predetermined direction; forming the domain control layer so as to hold the magnetoresistive device in a track width direction; magnetizing the domain control layer in a direction yielding a magnetic field in the same direction as with a magnetic field received by the ferromagnetic layer upon exchange-coupling with the antiferromagnetic layer, forming the second shield layer, carried out after magnetizing the domain control layer, and remagnetizing the domain control layer in a direction yielding the longitudinal bias magnetic field, carried out after forming the second shield layer.
摘要翻译：一种制造薄膜磁头的方法，包括形成第一屏蔽层; 形成所述磁阻器件，在形成所述第一屏蔽层之后进行的热处理，提供所述铁磁层与所述反铁磁层之间的交换耦合，以便沿预定方向磁化所述铁磁层; 形成所述域控制层，以将所述磁阻器件保持在轨道宽度方向; 在与反铁磁层交换耦合时由铁磁层接收的磁场沿与所述磁场相同的方向产生磁场的方向磁化畴控制层，形成在磁化控制层之后进行的第二屏蔽层，并且在形成第二屏蔽层之后进行的产生纵向偏置磁场的方向使磁畴控制层再磁化。

72. 发明申请

US20100103562A1 Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers 有权
标题翻译：磁阻元件包括耦合到一对屏蔽层的一对铁磁层
公开(公告)号：US20100103562A1
公开(公告)日：2010-04-29
申请号：US12289401
申请日：2008-10-27
申请人： Takahiko Machita , Daisuke Miyauchi , Yoshihiro Tsuchiya , Tsutomu Chou , Shinji Hara , Koji Shimazawa
发明人： Takahiko Machita , Daisuke Miyauchi , Yoshihiro Tsuchiya , Tsutomu Chou , Shinji Hara , Koji Shimazawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B2005/3996
摘要： A magnetoresistive element includes a pair of shield portions, and an MR stack and a bias magnetic field applying layer that are disposed between the pair of shield portions. The shield portions respectively include single magnetic domain portions. The MR stack includes a pair of ferromagnetic layers magnetically coupled to the pair of single magnetic domain portions, and a spacer layer disposed between the pair of ferromagnetic layers. The MR stack has a front end face, a rear end face and two side surfaces. The magnetoresistive element further includes two flux guide layers disposed between the pair of single magnetic domain portions and respectively adjacent to the two side surfaces of the MR stack. Each of the two flux guide layers has a front end face and a rear end face. The bias magnetic field applying layer has a front end face that faces the rear end face of the MR stack and the respective rear end faces of the two flux guide layers.
摘要翻译：磁阻元件包括一对屏蔽部分，以及设置在该对屏蔽部分之间的MR堆叠和偏置磁场施加层。屏蔽部分别包括单个磁畴部分。 MR堆叠包括磁耦合到该对单个磁畴部分的一对铁磁层，以及设置在该对铁磁层之间的间隔层。 MR堆叠具有前端面，后端面和两个侧面。磁阻元件还包括设置在一对单磁畴部分之间并且分别邻近MR堆叠的两个侧表面的两个磁通引导层。两个磁通导向层中的每一个具有前端面和后端面。偏置磁场施加层具有面向MR堆叠的后端面的前端面和两个导流层的各个后端面。

73. 发明授权

US07535682B2 Magneto-resistance element and thin film magnetic head with improved heat reliability 有权
标题翻译：磁阻元件和薄膜磁头，提高了热可靠性
公开(公告)号：US07535682B2
公开(公告)日：2009-05-19
申请号：US11519854
申请日：2006-09-13
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996 , H01F1/408 , H01F10/1936 , H01F10/3272
摘要： A magneto-resistance element according to the present invention has a pinned layer whose magnetization direction is fixed; a free layer whose magnetization direction varies in accordance with an external magnetic field; and a nonmagnetic spacer layer that is arranged between the pinned layer and the free layer, at least the pinned layer or the free layer includes a layer having Heusler alloy represented by composition formula X2YZ (where X is a precious metal element, Y is a transition metal of Mn, V, or Ti group, Z is an element from group III to group V), and a part of composition X is replaced with Co, and an atomic composition ratio of Co in composition X is from 0.5 to 0.85.
摘要翻译：根据本发明的磁阻元件具有固定磁化方向的钉扎层; 其磁化方向根据外部磁场而变化的自由层; 以及布置在被钉扎层和自由层之间的非磁性间隔层，至少被钉扎层或自由层包括由组成式X2YZ（其中X为贵金属元素，Y为过渡层）的Heusler合金层 Mn，V或Ti基的金属，Z是III族至V族的元素），组成X的一部分被Co替代，组合物X中的Co的原子组成比为0.5〜0.85。

74. 发明申请

US20090086383A1 CPP type magneto-resistive effect device and magnetic disk system 有权
标题翻译： CPP型磁阻效应器和磁盘系统
公开(公告)号：US20090086383A1
公开(公告)日：2009-04-02
申请号：US11865384
申请日：2007-10-01
申请人： Shinji Hara , Daisuke Miyauchi , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Takahiko Machita
发明人： Shinji Hara , Daisuke Miyauchi , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Takahiko Machita
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01F10/3259 , H01F10/3272 , H01F41/307
摘要： The invention provides a giant magneto-resistive effect device of the CPP (current perpendicular to plane) structure (CPP-GMR device) comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together with said spacer layer sandwiched between them, with a sense current passed in the stacking direction, wherein the first ferromagnetic layer and the second ferromagnetic layer function such that the angle made between the directions of magnetizations of both layers change relatively depending on an external magnetic field, said spacer layer contains a semiconductor oxide layer, and a nitrogen element-interface protective layer is provided at a position where the semiconductor oxide layer forming the whole or a part of said spacer layer contacts an insulating layer. Thus, there is a nitride of high covalent bonding capability formed at the surface of junction between the semiconductor oxide layer and the interface protective layer, so that the migration of oxygen from the semiconductor oxide layer to the insulating layer is inhibited; even when the device undergoes heat and stress in the process, fluctuations and deteriorations of device characteristics are held back.
摘要翻译：本发明提供了包括间隔层的CPP（电流垂直于平面）结构（CPP-GMR器件）的巨磁阻效应器件，以及与夹在它们之间的间隔层堆叠在一起的第一铁磁层和第二铁磁层，其中感测电流在层叠方向上通过，其中第一铁磁层和第二铁磁层的功能使得两个磁体的磁化方向之间产生的角度根据外部磁场而相对地改变，所述间隔层包含半导体氧化物层和氮元素界面保护层设置在形成全部或一部分所述间隔层的半导体氧化物层与绝缘层接触的位置。因此，在半导体氧化物层和界面保护层的结的表面形成有高共价键合能力的氮化物，从而抑制氧从半导体氧化物层向绝缘层的迁移; 即使该装置在该过程中经受热和应力，阻止装置特性的波动和劣化。

75. 发明授权

US07510787B2 Magneto-resistance effect element and thin-film magnetic head 有权
标题翻译：磁阻效应元件和薄膜磁头
公开(公告)号：US07510787B2
公开(公告)日：2009-03-31
申请号：US11671248
申请日：2007-02-05
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Daisuke Miyauchi , Koji Shimazawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , H01F10/1936 , H01F10/3259 , H01F10/3272 , H01L43/10 , Y10T428/1121
摘要： An MR element has a pinned layer, a spacer layer, and a free layer successively stacked in the order named. The free layer includes a Heusler alloy layer in at least a region thereof adjacent to the spacer layer. An oxide is distributed as sea-islands in the interface between the Heusler alloy layer and the spacer layer. The Heusler alloy layer virtually has a stoichiometric composition. The oxide has an RA in the range from 0.10 Ωμm2 to 0.36 Ωμm2.
摘要翻译： MR元件具有钉扎层，间隔层和自由层，依次按顺序堆叠。自由层在与间隔层相邻的至少一个区域中包括Heusler合金层。在Heusler合金层和间隔层之间的界面中，氧化物作为海岛分布。 Heusler合金层实际上具有化学计量组成。该氧化物的RA为0.10〜2μm，峰值为0.36μmol。

76. 发明申请

US20080174920A1 CPP TYPE MAGNETO-RESISTIVE EFFECT DEVICE AND MAGNETIC DISC SYSTEM 有权
标题翻译： CPP型磁阻效应器和磁盘系统
公开(公告)号：US20080174920A1
公开(公告)日：2008-07-24
申请号：US11626562
申请日：2007-01-24
申请人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/56 , G11B5/127
CPC分类号： G11B5/4826 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interleaved between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interleaved between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of indium oxide (In2O3), or the semiconductor oxide layer contains indium oxide (In2O3) as its main component, and an oxide containing a tetravalent cation of SnO2 is contained in the indium oxide that is the main component. The semiconductor oxide layer that forms a part of the spacer layer can thus be made thick while the device has a low area resistivity as desired, ensuring much more favorable advantages: ever higher MR performance, prevention of device area resistivity variations, and much improved reliability of film characteristics.
摘要翻译：本发明提供一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），其包括间隔层，以及固定磁化层和自由层，所述固定磁化层和自由层彼此层叠，它们具有沿层叠方向施加的感测电流，其中间隔层包括由非磁性金属材料形成的第一和第二非磁性金属层和交错在第一和第二非磁性金属层之间的半导体氧化物层，其中形成间隔层的一部分的半导体氧化物层由氧化铟（In 2 O 3 O 3）制成，或者半导体氧化物层含有氧化铟（In < 作为其主要成分的氧化物，包含SnO 2的四价阳离子的氧化物，作为主要成分的氧化铟中含有。因此，形成间隔层的一部分的半导体氧化物层可以制成厚度，同时器件根据需要具有低的面积电阻率，确保更有利的优点：越来越高的MR性能，防止器件面积电阻率变化和大大提高的可靠性的电影特色。

77. 发明申请

US20080112091A1 Current-confined-path type magnetoresistive element and method of manufacturing same 审中-公开
标题翻译：电流限制型磁阻元件及其制造方法
公开(公告)号：US20080112091A1
公开(公告)日：2008-05-15
申请号：US11896707
申请日：2007-09-05
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996
摘要： A spacer layer of an MR element includes: a nonmagnetic metal layer disposed on a pinned layer; a protection layer disposed on the nonmagnetic metal layer to prevent oxidation or nitriding of the nonmagnetic metal layer; an island-shaped insulating layer disposed on the protection layer; and a coating layer covering these layers. When seen in a direction perpendicular to the top surface of the pinned layer, there are formed in the spacer layer a region where the insulating layer is present and a region where the insulating layer is absent. A thickness of the protection layer taken in at least part of the region where the insulating layer is absent is zero or smaller than a thickness of the protection layer taken in the region where the insulating layer is present.
摘要翻译： MR元件的间隔层包括：设置在钉扎层上的非磁性金属层; 设置在所述非磁性金属层上以防止所述非磁性金属层的氧化或氮化的保护层; 设置在保护层上的岛状绝缘层; 以及覆盖这些层的涂层。当在垂直于被钉扎层的顶表面的方向上观察时，在间隔层中形成绝缘层存在的区域和绝缘层不存在的区域。在绝缘层不存在的区域的至少一部分中取出的保护层的厚度为保护层的厚度在与绝缘层存在的区域相同的厚度以上。

78. 发明申请

US20080019060A1 MAGNETO-RESISTIVE EFFECT DEVICE, THIN-FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, AND HARD DISK SYSTEM 有权
标题翻译：磁阻效应器件，薄膜磁头，头盖组件和硬盘系统
公开(公告)号：US20080019060A1
公开(公告)日：2008-01-24
申请号：US11762457
申请日：2007-06-13
申请人： Tomohito MIZUNO , Yoshihiro Tsuchiya , Koji Shimazawa
发明人： Tomohito MIZUNO , Yoshihiro Tsuchiya , Koji Shimazawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3967 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/1936 , H01F10/3272 , H01F10/3295 , H01L43/10
摘要： The invention provides a magneto-resistive effect device having a CPP (current perpendicular to plane) structure comprising a nonmagnetic spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said nonmagnetic spacer layer sandwiched between them, with a sense current applied in a stacking direction, wherein said free layer functions such that its magnetization direction changes depending on an external magnetic field, and is made up of a multilayer structure including a Heusler alloy layer, wherein an Fe layer is formed on one of both planes of said Heusler alloy layer in the stacking direction, wherein said one plane is near to at least a nonmagnetic spacer layer side, and said fixed magnetization layer is made up of a multilayer structure including a Heusler alloy layer, wherein Fe layers are formed on both plane sides of said Heusler alloy layer in the stacking direction with said Heusler alloy layer sandwiched between them. It is thus possible to prevent diffusion of Co atoms contained in the CoFe layer into the Heusler alloy layer, enabling the decrease in the spin polarizability of the Heusler alloy layer to be hold back and achieving a high MR ratio.
摘要翻译：本发明提供一种具有包含非磁性间隔层的CPP（电流垂直于平面）结构的磁阻效应器件，以及夹在它们之间的所述非磁性间隔层彼此堆叠的固定磁化层和自由层，具有感觉电流施加在层叠方向上，其中所述自由层的功能使得其磁化方向根据外部磁场而变化，并且由包括Heusler合金层的多层结构构成，其中在两个平面之一上形成Fe层的所述Heusler合金层，其中所述一个平面接近至少一个非磁性间隔层侧，并且所述固定磁化层由包括Heusler合金层的多层结构构成，其中在两者上形成Fe层所述Heusler合金层在层叠方向上的平面侧与所述Heusler合金层夹在它们之间。因此，可以防止CoFe层中所含的Co原子扩散到Heusler合金层中，能够抑制Heusler合金层的自旋极化率的降低并获得高的MR比。

79. 发明申请

US20070291422A1 Method for manufacturing magnetic field detecting element, utilizing diffusion of metal 有权
标题翻译：利用金属扩散制造磁场检测元件的方法
公开(公告)号：US20070291422A1
公开(公告)日：2007-12-20
申请号：US11708537
申请日：2007-02-21
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata , Keita Kawamori , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata , Keita Kawamori , Koji Shimazawa
IPC分类号： G11B5/39 , G11B5/33 , G11B5/48
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , G11B5/3163 , H01L43/12 , Y10T428/1121
摘要： A method for manufacturing a magnetic field detecting element has the steps of: forming stacked layers by sequentially depositing a pinned layer, a spacer layer, a spacer adjoining layer which is adjacent to the spacer layer, a metal layer, and a Heusler alloy layer in this order, such that the layers adjoin each other; and heat treating the stacked layers in order to form the free layer out of the spacer adjoining layer, the metal layer, and the Heusler alloy layer. The spacer adjoining layer is mainly formed of cobalt and iron, and has a body centered cubic structure, and the metal layer is formed of an element selected from the group consisting of silver, gold, copper, palladium, or platinum, or is formed of an alloy thereof.
摘要翻译：一种制造磁场检测元件的方法，其特征在于：通过依次沉积与间隔层相邻的钉扎层，间隔层，间隔物邻接层，金属层和Heusler合金层，形成堆叠层这个顺序，使得这些层彼此相邻; 并且对层叠层进行热处理，以便在间隔物邻接层，金属层和Heusler合金层之间形成自由层。间隔物邻接层主要由钴和铁形成，并且具有体心立方结构，金属层由选自银，金，铜，钯或铂的元素形成，或者由其合金。

80. 发明申请

US20070217087A1 Magnetic thin film and magnetoresistance effect element having a heusler alloy layer containing an additive element 审中-公开
标题翻译：磁性薄膜和磁阻效应元件具有包含添加元素的赫斯勒合金层
公开(公告)号：US20070217087A1
公开(公告)日：2007-09-20
申请号：US11723143
申请日：2007-03-16
申请人： Kei Hirata , Keita Kawamori , Tomohito Mizuno , Yoshihiro Tsuchiya , Koji Shimazawa
发明人： Kei Hirata , Keita Kawamori , Tomohito Mizuno , Yoshihiro Tsuchiya , Koji Shimazawa
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , H01F10/1936 , H01F10/3272 , H01L27/222 , H01L43/10
摘要： A magnetic thin film has a layer which is formed of an alloy having a ordered crystal structure whose composition formula is represented by XYZ or X2YZ (where X is one or more than one of the elements selected from the group consisting of Co, Ir, Rh, Pt, and Cu, Y is one or more than one of the elements selected from the group consisting of V, Cr, Mn, and Fe, and Z is one or more than one of the elements selected the group consisting of Al, Si, Ge, As, Sb, Bi, In, Ti, and Pb). The alloy contains at least one additive element which is not included in the composition formula of the alloy and which has a Debye temperature that is equal to or less than 300K.
摘要翻译：磁性薄膜具有由具有有序晶体结构的合金形成的层，其组成式由XYZ或X 2 YZ表示（其中X是选自以下的元素中的一种或多于一种元素：由Co，Ir，Rh，Pt和Cu组成的组，Y是选自V，Cr，Mn和Fe中的一种或多种元素，Z是一种或多于一种元素选自Al，Si，Ge，As，Sb，Bi，In，Ti和Pb组成的组）。该合金含有至少一种添加元素，其不包括在合金的组成式中，并且德拜温度等于或小于300K。

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