专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明申请

US20090152628A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090152628A1
公开(公告)日：2009-06-18
申请号：US11958531
申请日：2007-12-18
申请人： Shuichi Kikuchi , Kiyofumi Nakaya , Shuji Tanaka
发明人： Shuichi Kikuchi , Kiyofumi Nakaya , Shuji Tanaka
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/0847 , H01L21/823418 , H01L27/088 , H01L29/1045 , H01L29/1083 , H01L29/7835
摘要： It is desirable to reduce chip area, lower on resistance and improve electric current driving capacity of a DMOS transistor in a semiconductor device with a DMOS transistor. On the surface of an N type epitaxial layer, a P+W layer of the opposite conductivity type (P type) is disposed and a DMOS transistor is formed in the P+W layer. The epitaxial layer and a drain region are insulated by the P+W layer. Therefore, it is possible to form both the DMOS transistor and other device element in a single confined region surrounded by an isolation layer. An N type FN layer is disposed on the surface region of the P+W layer beneath the gate electrode. An N+D layer, which is adjacent to the edge of the gate electrode of the drain layer side, is also formed. P type impurity layers (a P+D layer and a FP layer), which are located below the drain layer, are disposed beneath the contact region of the drain layer.
摘要翻译：期望在具有DMOS晶体管的半导体器件中减小芯片面积，降低导通电阻并提高DMOS晶体管的电流驱动能力。在N型外延层的表面上设置相反导电型（P型）的P + W层，在P + W层形成DMOS晶体管。外延层和漏极区由P + W层绝缘。因此，可以在由隔离层包围的单个限制区域内形成DMOS晶体管和其它器件元件。 N型FN层设置在栅电极下面的P + W层的表面区域上。还形成了与漏极层侧的栅电极的边缘相邻的N + D层。位于漏极层下方的P型杂质层（P + D层和FP层）设置在漏极层的接触区域的下方。

72. 发明申请

US20070200171A1 Seminconductor device and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070200171A1
公开(公告)日：2007-08-30
申请号：US11708685
申请日：2007-02-21
申请人： Shuji Tanaka , Shuichi Kikuchi , Kiyofumi Nakaya
发明人： Shuji Tanaka , Shuichi Kikuchi , Kiyofumi Nakaya
IPC分类号： H01L29/76
CPC分类号： H01L29/7835 , H01L29/086 , H01L29/0878 , H01L29/0886 , H01L29/402 , H01L29/66659
摘要： The invention provides a high voltage MOS transistor having a high gate breakdown voltage and a high source/drain breakdown voltage and having a low on-resistance. A gate electrode is formed on an epitaxial silicon layer with a LOCOS film being interposed therebetween. A P-type first drift layer is formed on the left side of the LOCOS film, and a P+-type source layer is disposed on the surface of the epitaxial silicon layer on the right side of the LOCOS film, being opposed to the first drift layer over the gate electrode. A P-type second drift layer is formed by being diffused in the epitaxial silicon layer deeper than the first drift layer, extending from under the first drift layer to under the left side of the LOCOS film. A recess is formed in a bottom portion of the second drift layer under the left end of the LOCOS film.
摘要翻译：本发明提供具有高栅极击穿电压和高源极/漏极击穿电压并具有低导通电阻的高压MOS晶体管。栅电极形成在外延硅层上，其中介于其间的LOCOS膜。在LOCOS膜的左侧形成P型第一漂移层，并且在LOCOS右侧的外延硅层的表面上设置P +型源极层膜，与栅电极上的第一漂移层相对。通过在比第一漂移层更深的外延硅层中扩散P型第二漂移层，从第一漂移层下方延伸到LOCOS膜的左侧。在LOCOS膜的左端下方的第二漂移层的底部形成凹部。

73. 发明授权

US07182201B2 Wafer carrying apparatus and wafer carrying method 有权
标题翻译：晶圆承载装置和晶片承载方式
公开(公告)号：US07182201B2
公开(公告)日：2007-02-27
申请号：US10792665
申请日：2004-03-03
申请人： Hisashi Fujimura , Shuji Tanaka , Yoshitake Kobayashi , Yasutsugu Aoki
发明人： Hisashi Fujimura , Shuji Tanaka , Yoshitake Kobayashi , Yasutsugu Aoki
IPC分类号： B65G49/06
CPC分类号： H01L21/67742 , H01L21/67712 , H01L21/67718 , Y10S414/135
摘要： A wafer carrying apparatus 20 for carrying intermediate products comprises: a conveyer 40 for carrying the intermediate products in the carrying direction; and a plurality of platforms 41 arranged in the conveyer 40 along the carrying direction of the intermediate products on the conveyer 40, each platform 41 being capable of mounting at least one intermediate product at a position in a direction crossing the carrying direction of the intermediate products on the conveyer 40.
摘要翻译：用于承载中间产品的晶片承载装置20包括：用于在运送方向上运送中间产品的输送机40; 以及沿输送机40上的中间产品的运送方向布置在输送机40中的多个平台41，每个平台41能够在与中间产品的运送方向交叉的方向上的位置处安装至少一个中间产品在输送机40上。

74. 发明授权

US07179931B2 High-purity trimethylaluminum and purification method of crude trimethylaluminum 有权
标题翻译：高纯度三甲基铝和粗三甲基铝的纯化方法
公开(公告)号：US07179931B2
公开(公告)日：2007-02-20
申请号：US11154535
申请日：2005-06-17
申请人： Takanobu Tsudera , Shuji Tanaka , Daisuke Iwai , Hiromi Nishiwaki , Takayuki Honma
发明人： Takanobu Tsudera , Shuji Tanaka , Daisuke Iwai , Hiromi Nishiwaki , Takayuki Honma
IPC分类号： C07F5/06
CPC分类号： C07F5/062
摘要： High-purity trimethylaluminum has the following impurity contents: organosilicon components≦0.5 ppm, chlorine components≦20 ppm, hydrocarbon components≦1,000 ppm, Ca≦0.05 ppm, Fe≦0.05 ppm, Mg≦0.05 ppm, Na≦0.05 ppm, Si (Si components other than the organosilicon components)≦0.07 ppm, Zn≦0.05 ppm, and S≦0.05 ppm. The high-purity trimethylaluminum can be obtained by removing impurities from crude trimethylaluminum through distillation and evaporation.
摘要翻译：高纯度三甲基铝具有以下杂质含量：有机硅组分<= 0.5ppm，氯组分<= 20ppm，烃组分<= 1,000ppm，Ca <= 0.05ppm，Fe <= 0.05ppm，Mg <= 0.05ppm，Na <= 0.05ppm，Si（除有机硅成分以外的Si成分）<= 0.07ppm，Zn <= 0.05ppm，S <0.05ppm。高纯度三甲基铝可以通过蒸馏除去粗三甲基铝中的杂质而获得。

75. 发明授权

US07108121B2 Intermediate product transferring apparatus and carrying system having the intermediate product transferring apparatus 有权
标题翻译：具有中间产品传送装置的中间产品传送装置和承载系统
公开(公告)号：US07108121B2
公开(公告)日：2006-09-19
申请号：US10793648
申请日：2004-03-04
申请人： Hisashi Fujimura , Shuji Tanaka , Yoshitake Kobayashi
发明人： Hisashi Fujimura , Shuji Tanaka , Yoshitake Kobayashi
IPC分类号： B65G37/00 , H01L21/68
CPC分类号： H01L21/67766 , H01L21/67736 , H01L21/67769 , H01L21/67778 , H01L21/68707
摘要： An intermediate product transferring apparatus is provided for transferring an intermediate product W between a single-wafer carrying line for carrying the intermediate product W in a single-wafer manner and a manufacturing apparatus for manufacturing the intermediate product W includes a transferring robot for transferring the intermediate product W between the single-wafer carrying line and the manufacturing apparatus; and a buffer for temporarily storing the intermediate product W which is transferred from the single-wafer carrying line by the transferring robot or the intermediate product W which is processed by the manufacturing apparatus.
摘要翻译：提供了一种中间产品转印装置，用于在单晶片方式的用于承载中间产品W的单晶片承载线之间转移中间产品W和用于制造中间产品的制造装置W包括用于转移中间产品W的中间产品W 单晶片承载线与制造装置之间的产品W; 以及缓冲器，用于临时存储由传送机器人或由制造设备处理的中间产品W从单晶片承载线传送的中间产品W.

76. 发明申请

US20060163037A1 Transferring apparatus, carrying apparatus, and transferring method 有权
公开(公告)号：US20060163037A1
公开(公告)日：2006-07-27
申请号：US11368061
申请日：2006-03-03
申请人： Hisashi Fujimura , Shuji Tanaka , Yoshitake Kobayashi , Yasutsugu Aoki
发明人： Hisashi Fujimura , Shuji Tanaka , Yoshitake Kobayashi , Yasutsugu Aoki
IPC分类号： B65G43/10
CPC分类号： H01L21/67736 , B65G37/02 , H01L21/67766
摘要： A transferring apparatus is provided between a plurality of carrying apparatuses, each carrying apparatus comprising support means for supporting carried products Wf, guide means for controlling the moving direction of the support means, the guide means being provided along processing apparatuses for processing the carried products Wf, and moving means for moving the support means along the guide means. The transferring apparatus includes synchronization control means for synchronizing the moving means of the one carrying apparatus with the moving means of the other carrying apparatus; and at least one hand-over means for receiving the carried products Wf from the support means of the one carrying apparatus and handing over the carried products Wf to the support means of the other carrying apparatus.

77. 发明申请

US20060130527A1 Method of fabricating mold for glass press 审中-公开
标题翻译：制造玻璃压制模具的方法
公开(公告)号：US20060130527A1
公开(公告)日：2006-06-22
申请号：US10557843
申请日：2004-03-22
申请人： Shuji Tanaka , Masayoshi Esashi
发明人： Shuji Tanaka , Masayoshi Esashi
IPC分类号： C03B11/08 , B28B7/38 , B05D1/36
CPC分类号： B32B18/00 , B81C99/009 , B81C2201/034 , C03B11/082 , C03B11/086 , C03B2215/22 , C03B2215/32 , C03B2215/412 , C04B35/565 , C04B37/001 , C04B37/006 , C04B2235/656 , C04B2235/6567 , C04B2235/963 , C04B2237/083 , C04B2237/123 , C04B2237/365 , C04B2237/568 , C04B2237/64 , C04B2237/704 , C04B2237/708
摘要： A method of fabricating a mold for glass press, characterized in that silicon carbide is deposited on the surface of a silicon mold, subsequently the deposited silicon carbide is bonded to a silicon carbide substrate, and thereafter the silicon mold is removed by etching. In this method of fabricating a mold for glass press, the bonding between the silicon carbide deposited on the silicon mold surface and the silicon carbide substrate can be strengthened by interposing a metal thin film.
摘要翻译：一种制造玻璃压制模具的方法，其特征在于，碳化硅沉积在硅模的表面上，随后将沉积的碳化硅结合到碳化硅衬底上，然后通过蚀刻去除硅模。在这种制造玻璃压模的方法中，通过插入金属薄膜，可以加强沉积在硅模表面上的碳化硅与碳化硅衬底之间的结合。

78. 发明授权

US07032739B2 Intermediate product carrying apparatus, and intermediate product carrying method 失效
标题翻译：中间产品运输装置和中间产品运输方式
公开(公告)号：US07032739B2
公开(公告)日：2006-04-25
申请号：US10813569
申请日：2004-03-30
申请人： Shuji Tanaka , Yoshitake Kobayashi , Hisashi Fujimura , Yasutsugu Aoki
发明人： Shuji Tanaka , Yoshitake Kobayashi , Hisashi Fujimura , Yasutsugu Aoki
IPC分类号： B65G29/00
CPC分类号： H01L21/67727 , H01L21/67736 , H01L21/67766 , Y10S414/135 , Y10S414/137
摘要： An intermediate product carrying apparatus is provided for loading a carrier, which is carried between a plurality of process systems and stores a plurality of intermediate products, into the corresponding process system, and then transferring the plurality of intermediate products of the carrier to a single wafer carrying conveyer, which carries the intermediate products in a single wafer state to an intermediate product manufacturing apparatus provided in the process system. The intermediate product carrying apparatus comprising: an intermediate product transfer means provided in the process system, for loading the carrier, which is carried between process systems and which stores the plurality of intermediate products, into the corresponding process system, and transferring the intermediate products.
摘要翻译：提供了一种中间产品运送装置，用于将承载在多个处理系统之间并将多个中间产品储存在相应的处理系统中的载体，然后将载体的多个中间产物转移到单个晶片将单个晶片状态的中间产品运送到设置在处理系统中的中间产品制造装置。所述中间产品运送装置包括：中间产品传送装置，设置在所述处理系统中，用于将承载在处理系统之间并将多个中间产品存储在其中的载体装载到相应的处理系统中并传送中间产品。

79. 发明授权

US06763216B2 Developing device and image forming apparatus including the same 有权
标题翻译：显影装置和包括其的图像形成装置
公开(公告)号：US06763216B2
公开(公告)日：2004-07-13
申请号：US10156853
申请日：2002-05-30
申请人： Mikio Ishibashi , Shuji Tanaka
发明人： Mikio Ishibashi , Shuji Tanaka
IPC分类号： G03G1509
CPC分类号： G03G15/0812 , G03G15/09 , G03G2215/0634
摘要： A developing device for feeding a developer stored therein to an image carrier of the present invention includes a sleeve facing the image carrier for causing the developer deposited thereon to contact a latent image formed on the image carrier. A regulating member faces the sleeve for regulating the thickness of the developer that forms a layer on the sleeve. A guide member has a guide surface for guiding the developer regulated by the regulating member toward the surface of the image carrier. The guide surface has a conductive surface facing the sleeve. The developing device protects the image carrier from defective images ascribable to impurities, which include deteriorated toner and paper dust, without resorting to a filter mechanism or a bias for collection.
摘要翻译：用于将存储在其中的显影剂供给到本发明的图像载体的显影装置包括面向图像载体的套筒，用于使沉积在其上的显影剂与形成在图像载体上的潜像接触。调节构件面向套筒，用于调节在套筒上形成层的显影剂的厚度。引导构件具有用于将由调节构件调节的显影剂朝向图像载体的表面引导的引导表面。引导表面具有面向套筒的导电表面。显影装置保护图像载体免受归因于杂质的不良图像，包括劣化的调色剂和纸屑，而不需要使用过滤机构或用于收集的偏压。

80. 发明授权

US06740729B1 Process for producing polycarbonate 失效
标题翻译：生产聚碳酸酯的方法
公开(公告)号：US06740729B1
公开(公告)日：2004-05-25
申请号：US09674725
申请日：1998-06-06
申请人： Shuji Tanaka , Shinichi Yoshida , Tamiko Nishihira
发明人： Shuji Tanaka , Shinichi Yoshida , Tamiko Nishihira
IPC分类号： C08G6400
CPC分类号： C08G64/307 , C07C68/00 , C07C69/96
摘要： A process for preparing polycarbonate is composed of the steps of transesterifying a dialkyl oxalate and a phenolic compound to give a diaryl oxalate; decarbonylating the diaryl oxalate to give a diaryl carbonate; reacting the diaryl carbonate with a polyvalent hydroxyl compound in the presence of a catalyst containing an amine compound or an ammonium compound to give the polycarbonate, removing a phenolic by-product/amine by-product mixture; collecting the mixture; purifying the mixture so that the amount of the amine by-product in the mixture is reduced to give a phenolic by-product mixture not containing the amine by-product in an amount of more than 600 ppm; and, utilizing thus purified phenolic mixture as a whole or a part of the phenolic compound in the first step.
摘要翻译：制备聚碳酸酯的方法由将草酸二烷基酯和酚类化合物酯交换得到草酸二芳基酯的步骤组成; 使草酸二芳基酯脱碳，得到碳酸二芳基酯; 在含有胺化合物或铵化合物的催化剂存在下使碳酸二芳酯与多价羟基化合物反应，得到聚碳酸酯，除去酚类副产物/胺副产物混合物; 收集混合物; 纯化混合物，使得混合物中的副产物的量减少，得到不含胺副产物的酚类副产物混合物的量大于600ppm; 并且在第一步中利用这样纯化的酚类混合物作为整体或一部分酚类化合物。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式