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71. 发明授权

US08009378B2 Storage device and information processing apparatus 有权
标题翻译：存储设备和信息处理设备
公开(公告)号：US08009378B2
公开(公告)日：2011-08-30
申请号：US12604226
申请日：2009-10-22
申请人： Takehiko Kurashige , Shinji Saito
发明人： Takehiko Kurashige , Shinji Saito
IPC分类号： G11B15/48
CPC分类号： G11B20/10527 , G11B19/02 , G11B19/20 , G11B2020/10657 , G11B2020/10759 , G11B2020/1099 , G11B2220/2516 , G11B2220/455 , G11B2220/61
摘要： According to one embodiment, a power management module of a storage device executes a process of stopping rotation of a disk storage medium by selectively using one of a first mode of stopping the rotation of the disk storage medium on condition that a media access command is not received during a predetermined time from last reception of a media access command, and a second mode of stopping the rotation of the disk storage medium on condition that a media access command which causes access to the disk storage medium is not received during a predetermined time from last reception of a media access command which causes access to the disk storage medium. In addition, the power management module executes a process of starting the rotation of the disk storage medium by selectively using one of a third mode and a fourth mode.
摘要翻译：根据一个实施例，存储装置的电源管理模块执行停止盘存储介质的旋转的处理，该过程通过选择性地使用媒体访问命令不是的条件来停止盘存储介质的旋转的第一模式中的一种在从上一次接收媒体访问命令的预定时间期间接收到的第二模式以及在预定时间期间没有接收到导致访问磁盘存储介质的媒体访问命令的条件下停止磁盘存储介质的旋转的第二模式最后接收导致访问磁盘存储介质的媒体访问命令。此外，电源管理模块通过选择性地使用第三模式和第四模式中的一个来执行开始盘存储介质的旋转的处理。

72. 发明授权

US07993948B2 Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device 有权
标题翻译：半导体装置，电极的制造方法以及半导体装置的制造方法
公开(公告)号：US07993948B2
公开(公告)日：2011-08-09
申请号：US12539275
申请日：2009-08-11
申请人： Shinji Saito , Shinya Nunoue , Toshiyuki Oka
发明人： Shinji Saito , Shinya Nunoue , Toshiyuki Oka
IPC分类号： H01L21/00
CPC分类号： H01S5/0425 , B82Y20/00 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32 , H01L33/40 , H01S5/2231 , H01S5/34333 , H01S2301/173 , H01S2304/00
摘要： A method for fabricating an electrode by (i) depositing a palladium film on a p-type semiconductor layer; (ii) introducing an oxygen gas onto the palladium film to provide an oxygen ambient; (iii) oxidizing the palladium film adjacent to the semiconductor layer by annealing the palladium film in the oxygen ambient; and (iv) forming a palladium oxide film directly in contact with the semiconductor layer.
摘要翻译：一种通过（i）在p型半导体层上沉积钯膜来制造电极的方法; （ii）将氧气引入到钯膜上以提供氧气氛; （iii）通过在氧环境中退火钯膜来氧化与半导体层相邻的钯膜; 和（iv）直接与半导体层接触形成氧化钯膜。

73. 发明授权

US07966978B2 Cooling control unit for water-cooled multi-cylinder internal combustion engine having cylinder deactivation mechanism 有权
标题翻译：具有气缸停用机构的水冷多缸内燃机冷却控制装置
公开(公告)号：US07966978B2
公开(公告)日：2011-06-28
申请号：US12146630
申请日：2008-06-26
申请人： Hayato Maehara , Takaaki Tsukui , Shinji Saito
发明人： Hayato Maehara , Takaaki Tsukui , Shinji Saito
IPC分类号： F01P3/00 , F02B77/08
CPC分类号： F02D13/06 , F01P3/02 , F01P2003/024 , F02F7/0012 , Y02T10/18
摘要： A cooling control unit for a water-cooled multi-cylinder internal combustion engine having a cylinder deactivation mechanism for controlling the flow of coolant to prevent the internal combustion engine from being incompletely warmed up when the internal combustion engine returns to its operating condition with all of the cylinders being activated. A communicating passage communicates with a normally activated cylinder coolant jacket as a coolant passage formed for normally activated cylinders and a deactivation-programmed cylinder water jacket as a coolant passage formed for the deactivation-programmed cylinders to communicate with each other, and through which the coolant flows. A bypass passage diverges from the communicating passage and bypasses the deactivation-programmed cylinder coolant jacket. A diversion control valve is provided in a diversion section where the bypass passage diverges from the communication passage. A control member controls the diversion control valve in accordance with the operating state of the internal combustion engine.
摘要翻译：一种用于水冷多缸内燃机的冷却控制单元，其具有用于控制冷却剂流动的气缸停用机构，以防止当内燃机返回其运行状态时内燃机不完全暖和气缸被激活。连通通道与正常激活的气缸冷却剂套管连通，作为为通常激活的气缸形成的冷却剂通道和经停用编程的气缸水套作为冷却剂通道，其被形成用于使失活编程的气缸彼此连通，并且冷却剂流动。旁路通道从连通通道分叉并绕过停用编程的气缸冷却剂套管。分流控制阀设置在旁路通路从连通路分叉的分流部。控制部件根据内燃机的运转状态来控制换向控制阀。

74. 发明申请

US20110051769A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20110051769A1
公开(公告)日：2011-03-03
申请号：US12719468
申请日：2010-03-08
申请人： Maki SUGAI , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Shinya Nunoue
发明人： Maki SUGAI , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Shinya Nunoue
IPC分类号： H01S5/323 , H01S5/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/1014 , H01S5/1039 , H01S5/16 , H01S5/164 , H01S5/2009 , H01S5/2214 , H01S5/3063 , H01S2301/18
摘要： A semiconductor light emitting device includes: a stacked body including a first and a second semiconductor layers of a first and second conductivity types respectively, and a light emitting layer provided between thereof; a first and a second electrodes in contact with the first and second semiconductor layers respectively. Light emitted is resonated between first and second end surfaces of the stacked body opposed in a first direction. The second semiconductor layer includes a ridge portion and a wide portion. A width of the ridge portion along a second direction perpendicular to the first and the stacking directions is narrower on the second electrode side than on the light emitting layer side. A width of the wide portion along the second direction is wider than the ridge portion. A width of the narrow part of the second electrode along the second direction is narrower than that on the ridge portion
摘要翻译：一种半导体发光器件包括：分别包括第一和第二导电类型的第一和第二半导体层的层叠体，以及设置在其间的发光层; 分别与第一和第二半导体层接触的第一和第二电极。发射的光在第一方向上相对的层叠体的第一和第二端面之间共振。第二半导体层包括脊部和宽部。沿着与第一方向垂直的第二方向和堆叠方向的脊部的宽度在第二电极侧比在发光层侧窄。沿着第二方向的宽部的宽度比脊部宽。沿着第二方向的第二电极的窄部的宽度比脊部的宽度窄

75. 发明授权

US07773648B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07773648B2
公开(公告)日：2010-08-10
申请号：US11365531
申请日：2006-03-02
申请人： Koichi Tachibana , Shinji Saito , Shinya Nunoue
发明人： Koichi Tachibana , Shinji Saito , Shinya Nunoue
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/0281 , H01S5/0287 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/3216
摘要： Disclosed herein is a high-reliability semiconductor device. The laser diode includes: a substrate; a multi-layer film including a first conductivity type cladding layer provided on the substrate, a first conductivity type guide layer provided on the first conductivity type cladding layer, an active layer provided on the first conductivity type guide layer, a second conductivity type guide layer provided on the active layer, and a second conductivity type cladding layer provided on the second conductivity type guide layer, each of the layers being made of a nitride-based III-V group compound semiconductor; a first protective layer made of nitride and provided on a light emitting surface of the laser diode; and a second protective layer provided on the first protective layer and made of nitride having a refractive index different from that of the first protective layer.
摘要翻译：这里公开了高可靠性半导体器件。激光二极管包括：基板; 包括设置在基板上的第一导电型包覆层的多层膜，设置在第一导电型包覆层上的第一导电型引导层，设置在第一导电型引导层上的有源层，第二导电型引导层设置在所述有源层上，以及设置在所述第二导电型导向层上的第二导电型包覆层，所述层由氮化物系III-V族化合物半导体构成。由氮化物制成的第一保护层，设置在激光二极管的发光表面上; 以及设置在第一保护层上并由与第一保护层的折射率不同的折射率的氮化物制成的第二保护层。

76. 发明授权

US07763907B2 Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US07763907B2
公开(公告)日：2010-07-27
申请号：US11850404
申请日：2007-09-05
申请人： Koichi Tachibana , Hajime Nago , Shinji Saito , Shinya Nunoue , Genichi Hatakoshi
发明人： Koichi Tachibana , Hajime Nago , Shinji Saito , Shinya Nunoue , Genichi Hatakoshi
IPC分类号： H01L33/22 , H01L33/14 , H01L33/38
CPC分类号： H01L33/32 , H01L33/02 , H01L33/16
摘要： A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a direction, and which is in a range of 0° to 10° in inclination angle into a direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.
摘要翻译：半导体发光元件包括：由III-V族半导体形成的{0001} n型半导体衬底，其倾斜角度在0°至45°的范围内，并且其为在倾斜角度为0°至10°的范围内成为<11-20>方向; 在n型半导体衬底上由III-V半导体形成的n型层; 由n型层上方的III-V族半导体形成的n型引导层; 由n型引导层上方的III-V族半导体形成的有源层; 由有源层上方的III-V族半导体形成的p型第一引导层; p型接触层，其由p型第一引导层上方的III-V族半导体形成; 以及在p型第一引导层和p型接触层之间由III-V族半导体形成的凹凸层。该凹凸层具有在顶面交替规则地配置的凹部和凸部，并且p型杂质浓度比p型接触层低。

77. 发明申请

US20100000347A1 Ceramic Member, Probe Holder, and Method of Manufacturing Ceramic Member 有权
标题翻译：陶瓷构件，探头支架和陶瓷构件的制造方法
公开(公告)号：US20100000347A1
公开(公告)日：2010-01-07
申请号：US12309537
申请日：2007-07-23
申请人： Shinya Miyaji , Shinji Saito
发明人： Shinya Miyaji , Shinji Saito
IPC分类号： G01D21/00 , C03C10/00
CPC分类号： G01R3/00 , C04B35/20 , C04B35/645 , C04B2235/3418 , C04B2235/3427 , C04B2235/652 , C04B2235/656 , C04B2235/658 , C04B2235/6581 , C04B2235/787 , C04B2235/9607 , G01R1/07314 , G01R1/07371 , G01R1/44
摘要： To provide a ceramic member having a thermal expansion coefficient close to that of silicon and has satisfactory workability, a probe holder formed by using this ceramic member, and a method of manufacturing the ceramic member. For this purpose, at least mica and silicon dioxide are mixed and an external force oriented in one direction is caused to act on this mixed mixture to sinter the mixture. It is more preferable that, in the mixture, a volume content of the mica is 70 to 90 volume % and a volume content of the silicon dioxide is 10 to 30 volume %.
摘要翻译：为了提供具有接近于硅的热膨胀系数的陶瓷构件，并且具有令人满意的可加工性，通过使用该陶瓷构件形成的探针保持架以及陶瓷构件的制造方法。为此目的，至少将云母和二氧化硅混合，并使在一个方向上取向的外力作用于该混合混合物以烧结混合物。更优选的是，在混合物中，云母的体积含量为70〜90体积％，二氧化硅的体积含量为10〜30体积％。

78. 发明授权

US07592641B2 Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device 失效
标题翻译：半导体装置，电极的制造方法以及半导体装置的制造方法
公开(公告)号：US07592641B2
公开(公告)日：2009-09-22
申请号：US10574850
申请日：2006-02-21
申请人： Shinji Saito , Shinya Nunoue , Toshiyuki Oka
发明人： Shinji Saito , Shinya Nunoue , Toshiyuki Oka
IPC分类号： H01L29/24
CPC分类号： H01S5/0425 , B82Y20/00 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32 , H01L33/40 , H01S5/2231 , H01S5/34333 , H01S2301/173 , H01S2304/00
摘要： A semiconductor device includes a p-type nitride semiconductor layer (14); and a p-side electrode (18) including a palladium oxide film (30) connected to a surface of the nitride semiconductor layer (14).
摘要翻译：半导体器件包括p型氮化物半导体层（14）; 和包括与氮化物半导体层（14）的表面连接的氧化钯膜（30）的p侧电极（18）。

79. 发明申请

US20090000576A1 COOLING CONTROL UNIT FOR WATER-COOLED MULTI-CYLINDER INTERNAL COMBUSTION ENGINE HAVING CYLINDER DEACTIVATION MECHANISM 有权
标题翻译：用于水冷式多缸内燃机的冷却控制单元具有气缸停止机构
公开(公告)号：US20090000576A1
公开(公告)日：2009-01-01
申请号：US12146630
申请日：2008-06-26
申请人： Hayato MAEHARA , Takaaki Tsukui , Shinji Saito
发明人： Hayato MAEHARA , Takaaki Tsukui , Shinji Saito
IPC分类号： F01P7/14
CPC分类号： F02D13/06 , F01P3/02 , F01P2003/024 , F02F7/0012 , Y02T10/18
摘要： A cooling control unit for a water-cooled multi-cylinder internal combustion engine having a cylinder deactivation mechanism for controlling the flow of coolant to prevent the internal combustion engine from being incompletely warmed up when the internal combustion engine returns to its operating condition with all of the cylinders being activated. A communicating passage communicates with a normally activated cylinder coolant jacket as a coolant passage formed for normally activated cylinders and a deactivation-programmed cylinder water jacket as a coolant passage formed for the deactivation-programmed cylinders to communicate with each other, and through which the coolant flows. A bypass passage diverges from the communicating passage and bypasses the deactivation-programmed cylinder coolant jacket. A diversion control valve is provided in a diversion section where the bypass passage diverges from the communication passage. A control member controls the diversion control valve in accordance with the operating state of the internal combustion engine.
摘要翻译：一种用于水冷多缸内燃机的冷却控制单元，其具有用于控制冷却剂流动的气缸停用机构，以防止当内燃机返回其运行状态时内燃机不完全暖和气缸被激活。连通通道与正常激活的气缸冷却剂套管连通，作为为通常激活的气缸形成的冷却剂通道和经停用编程的气缸水套作为冷却剂通道，所述冷却剂通道形成用于停用编程的气缸彼此连通，并且冷却剂流动。旁路通道从连通通道分叉并绕过停用编程的气缸冷却剂套管。分流控制阀设置在旁路通路从连通路分叉的分流部。控制部件根据内燃机的运转状态来控制换向控制阀。

80. 发明授权

US07341820B2 Optical information recording medium 失效
标题翻译：光信息记录介质
公开(公告)号：US07341820B2
公开(公告)日：2008-03-11
申请号：US10305976
申请日：2002-11-29
申请人： Toshio Ishida , Takeshi Kakuta , Shinji Saito
发明人： Toshio Ishida , Takeshi Kakuta , Shinji Saito
IPC分类号： G11B7/24
CPC分类号： G11B7/257 , G11B7/244 , G11B7/248 , Y10S430/146
摘要： The present invention is an optical information recording medium comprising a substrate having disposed in an order thereon a recording layer, an interlayer, and a cover layer, wherein recording and reproduction are carried out by the irradiation with a laser light having a wavelength in the range of 380 to 500 nm through a lens having a lens numerical aperture NA of 0.7 or more, wherein the recording layer is a layer of an organic substance and the thickness of the interlayer is within a range of 1 nm to 9 nm.
摘要翻译：本发明是一种光学信息记录介质，其包括在其上依次设置有记录层，中间层和覆盖层的基板，其中通过用波长在该范围内的激光进行照射来进行记录和再现通过透镜数值孔径NA为0.7以上的透镜，其中记录层为有机物质层，中间层的厚度在1nm〜9nm的范围内。

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