专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US08659025B2 Semiconductor device and method of manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08659025B2
公开(公告)日：2014-02-25
申请号：US13613215
申请日：2012-09-13
申请人： Etsuko Fujimoto , Satoshi Murakami , Shunpei Yamazaki , Shingo Eguchi
发明人： Etsuko Fujimoto , Satoshi Murakami , Shunpei Yamazaki , Shingo Eguchi
IPC分类号： H01L27/15
CPC分类号： H01L29/78624 , H01L27/1222 , H01L27/127 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
摘要翻译：制造具有高可靠性和操作性能的半导体器件，而不增加制造步骤的数量。栅电极具有层叠结构。根据电路的功能，选择具有与栅电极重叠的低浓度杂质区域的TFT或具有不与栅电极重叠的低浓度杂质区域的TFT。

72. 发明授权

US08653705B2 Stator cooling device 有权
标题翻译：定子冷却装置
公开(公告)号：US08653705B2
公开(公告)日：2014-02-18
申请号：US13282925
申请日：2011-10-27
申请人： Satoshi Murakami
发明人： Satoshi Murakami
IPC分类号： H02K9/00
CPC分类号： H02K9/19 , H02K1/185 , H02K5/20
摘要： A stator cooling device configured with a cylindrical stator main body that uses a rotation axis of a rotary electric machine as a central axis. A fixed portion is formed on an outer peripheral portion of the stator main body so as to protrude outward in a radial direction of the stator main body. A cooling medium flow passage includes an injection hole through which cooling medium is injected. The fixed portion is configured above a horizontal plane that passes through the central axis, and a peak portion that is farthest in the fixed portion from the central axis as viewed in an axial direction of the central axis. The injection hole opens toward the fixed portion above the outer peripheral portion of the stator and toward the first vertical plane side with respect to a second vertical plane that is a vertical plane that passes through the peak portion.
摘要翻译：一种定子冷却装置，其构造为使用旋转电机的旋转轴线作为中心轴的圆柱形定子主体。固定部分形成在定子主体的外周部上，以便在定子主体的径向方向上向外突出。冷却介质流路包括注入冷却介质的注入孔。固定部分配置在穿过中心轴线的水平平面上方，以及在中心轴线方向上从固定部分离中心轴线最远的峰部分。喷射孔相对于穿过峰部的垂直平面的第二垂直平面朝向定子的外周部上方的固定部朝向第一垂直面侧开口。

73. 发明申请

US20130301304A1 DC-DC CONVERTER 有权
标题翻译： DC-DC转换器
公开(公告)号：US20130301304A1
公开(公告)日：2013-11-14
申请号：US13980911
申请日：2011-11-24
申请人： Satoshi Murakami , Masaki Yamada , Ryota Kondo , Takashi Kaneyama , Kazutoshi Awane
发明人： Satoshi Murakami , Masaki Yamada , Ryota Kondo , Takashi Kaneyama , Kazutoshi Awane
IPC分类号： H02M3/335
CPC分类号： H02M3/335 , H02M3/33507
摘要： A DC-DC converter in which a primary side and a secondary side are insulated by a transformer, includes: two diodes having anodes respectively connected to both ends of a secondary winding of the transformer and cathodes connected to each other; a series circuit composed of a resistor and a capacitor connected in series; and a snubber circuit formed by connecting the cathodes of the diodes to the connection point between the resistor and the capacitor. Surge voltage caused on the secondary side of the transformer is clamped at the voltage of the capacitor, and surge energy stored in the capacitor is regenerated to a load via the resistor. Thus, surge voltage caused on the secondary side of the transformer is suppressed with a simple configuration, and effective use of surge energy is ensured.
摘要翻译：其中初级侧和次级侧由变压器绝缘的DC-DC转换器包括：具有分别连接到变压器的次级绕组的两端的阳极和彼此连接的阴极的两个二极管; 由电阻器和串联连接的电容器组成的串联电路; 以及通过将二极管的阴极连接到电阻器和电容器之间的连接点而形成的缓冲电路。在变压器的二次侧产生的浪涌电压被钳位在电容器的电压上，并且存储在电容器中的浪涌能量通过电阻再生成负载。因此，通过简单的结构来抑制在变压器的次级侧产生的浪涌电压，并且确保有效地利用浪涌能量。

74. 发明申请

US20130299099A1 TARGET SUBSTANCE TRANSFER METHOD, CRYSTAL PRODUCTION METHOD, COMPOSITION PRODUCTION METHOD, AND TARGET SUBSTANCE TRANSFER DEVICE 有权
标题翻译：目标物质转移方法，晶体生产方法，组合物生产方法和目标物质转移装置
公开(公告)号：US20130299099A1
公开(公告)日：2013-11-14
申请号：US13980212
申请日：2012-01-18
申请人： Yusuke Mori , Tsuyoshi Inoue , Kazufumi Takano , Hiroyoshi Matsumura , Hiroaki Adachi , Shigeru Sugiyama , Ryota Murai , Masateru Kurata , Hiroshi Yoshikawa , Mihoko Hirao , Satoshi Nakayama , Yoshinori Takahashi , Satoshi Murakami
发明人： Yusuke Mori , Tsuyoshi Inoue , Kazufumi Takano , Hiroyoshi Matsumura , Hiroaki Adachi , Shigeru Sugiyama , Ryota Murai , Masateru Kurata , Hiroshi Yoshikawa , Mihoko Hirao , Satoshi Nakayama , Yoshinori Takahashi , Satoshi Murakami
IPC分类号： B01J19/00
CPC分类号： B01J19/008 , B01D9/0081 , B01J19/10 , B01J19/121 , C30B5/00 , C30B29/58
摘要： The present invention provides a target substance transfer method, a crystal production method, a composition production method, and a target substance transfer device, which allow the concentration of a target substance to be increased easily and effectively. The target substance transfer method is a method for transferring a target substance 103 from a first phase 101 that is a liquid or solid phase containing the target substance 103 to a second phase 102 including: a phase approximation step of bringing the first phase 101 and the second phase 102 into close proximity; and a bubble collapse step of forming bubbles in the vicinity of a boundary between the first phase 101 and the second phase 102 and then causing the bubbles to collapse.
摘要翻译：本发明提供了能够容易且有效地增加目标物质浓度的目标物质转移方法，结晶生产方法，组合物制备方法和目标物质转移装置。目标物质转移方法是从包含目标物质103的液相或固相的第一相101向第二相102输送目标物质103的方法，包括：使第一相101和第二阶段102接近; 以及在第一相101和第二相102之间的边界附近形成气泡，然后使气泡塌陷的气泡塌陷步骤。

75. 发明授权

US08536581B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US08536581B2
公开(公告)日：2013-09-17
申请号：US13426650
申请日：2012-03-22
申请人： Satoshi Murakami , Yosuke Tsukamoto , Tomoaki Atsumi , Masayuki Sakakura
发明人： Satoshi Murakami , Yosuke Tsukamoto , Tomoaki Atsumi , Masayuki Sakakura
IPC分类号： H01L33/00
CPC分类号： H01L29/04 , G02F1/13454 , G02F1/136204 , H01L27/12 , H01L27/1214 , H01L27/124
摘要： In a semiconductor device, gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.

76. 发明授权

US08471262B2 Semiconductor device and fabrication method thereof 有权
公开(公告)号：US08471262B2
公开(公告)日：2013-06-25
申请号：US13238754
申请日：2011-09-21
申请人： Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado , Hideto Ohnuma
发明人： Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado , Hideto Ohnuma
IPC分类号： H01L27/14
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/13454 , G02F1/136227 , G02F1/136286 , G02F2201/123 , G02F2202/104 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L27/3272 , H01L27/3276 , H01L29/458 , H01L29/78621 , H01L29/78627 , H01L29/78675 , H01L2029/7863 , H01L2227/323
摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

77. 发明授权

US08450741B2 Luminescent device and process of manufacturing the same 有权
标题翻译：发光装置及其制造工艺
公开(公告)号：US08450741B2
公开(公告)日：2013-05-28
申请号：US13225586
申请日：2011-09-06
申请人： Satoshi Murakami , Mitsuhiro Ichijo , Taketomi Asami
发明人： Satoshi Murakami , Mitsuhiro Ichijo , Taketomi Asami
IPC分类号： H01L27/14
CPC分类号： H01L27/3258 , H01L21/7684 , H01L21/76841 , H01L27/12 , H01L27/1214 , H01L27/1248 , H01L27/1251 , H01L27/1255 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L33/0041 , H01L51/5221 , H01L51/5253 , H01L2227/323 , H01L2924/0002 , H01L2924/00
摘要： In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.
摘要翻译：在使用阴极中含有碱土类金属的材料的情况下，担心从EL元件向所产生的TFT扩散杂质离子（如碱土类金属离子）扩散至产生的TFT TFT的特性变化。因此，作为设置在TFT和EL元件之间的绝缘膜，含有不仅阻挡诸如碱土金属离子等杂质离子扩散的材料的膜，而且还积极地吸收杂质离子如碱土金属离子。

78. 发明申请

US20120299404A1 ROTOR FOR ROTATING ELECTRIC MACHINE 有权
标题翻译：旋转电机转子
公开(公告)号：US20120299404A1
公开(公告)日：2012-11-29
申请号：US13519543
申请日：2010-09-29
申请人： Yoshihisa Yamamoto , Yukinori Nakamori , Satoshi Murakami , Yoichi Miyoshi , Meio Gi
发明人： Yoshihisa Yamamoto , Yukinori Nakamori , Satoshi Murakami , Yoichi Miyoshi , Meio Gi
IPC分类号： H02K9/00
CPC分类号： H02K1/2766 , H02K1/28 , H02K1/32 , H02K9/19
摘要： In a rotor for the dynamo, the interior circumference face of a rotor core main body makes contact in a thermally transmissible manner with a rotor axle, and the rotor axle includes a cooling medium circulation space. The rotor is provided with a cooling medium supply member, which supplies the cooling medium to the cooling medium circulation space. The cooling medium supply member is provided with a cooling medium supply path that extends in the rotor axle direction, and cooling medium supply holes that extend externally in the direction of the rotor diameter. The cooling medium supply holes are provided with supply apertures that open toward the cooling interior circumference face. The rotor axle is provided with cooling medium discharge holes that extend externally in the direction of the rotor diameter. The cooling medium discharge holes are provided with discharge apertures that open externally in the diameter direction.
摘要翻译：在发电机的转子中，转子铁芯主体的内周面与转子轴以热传递的方式接触，转子轴包括冷却介质循环空间。转子设置有冷却介质供应构件，其将冷却介质供应到冷却介质循环空间。冷却介质供给部件设置有沿转子轴方向延伸的冷却介质供给路径和从转子直径方向向外延伸的冷却介质供给孔。冷却介质供给孔设置有朝向冷却内周面打开的供给孔。转子轴设有从转子直径方向向外延伸的冷却介质排出孔。冷却介质排出孔设有沿直径方向向外开口的排出孔。

79. 发明申请

US20120235153A1 Semiconductor Device and Method of Manufacturing the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120235153A1
公开(公告)日：2012-09-20
申请号：US13426650
申请日：2012-03-22
申请人： Satoshi Murakami , Yosuke Tsukamoto , Tomoaki Atsumi , Masayuki Sakakura
发明人： Satoshi Murakami , Yosuke Tsukamoto , Tomoaki Atsumi , Masayuki Sakakura
IPC分类号： H01L33/36
CPC分类号： H01L29/04 , G02F1/13454 , G02F1/136204 , H01L27/12 , H01L27/1214 , H01L27/124
摘要： In a semiconductor device, gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.
摘要翻译：在半导体器件中，栅极信号线在结晶半导体膜之上彼此间隔开。因此，当在层间绝缘膜中打开接触孔时，第一保护电路不电连接。在干蚀刻期间产生的用于打开接触孔的静电从栅极信号线移动，损坏栅极绝缘膜，通过晶体半导体膜，并且在栅极绝缘膜到达栅极信号线之前再次损坏栅极绝缘膜。由于在干蚀刻期间产生的静电损害第一保护电路，所以静电的能量减小，直到损失驱动电路TFT的能力。从而防止了驱动电路TFT遭受静电放电损坏。

80. 发明授权

US08269382B2 Cooling structure of stator 有权
标题翻译：定子冷却结构
公开(公告)号：US08269382B2
公开(公告)日：2012-09-18
申请号：US12964122
申请日：2010-12-09
申请人： Yukinori Nakamori , Satoshi Murakami , Hirotaka Mori
发明人： Yukinori Nakamori , Satoshi Murakami , Hirotaka Mori
IPC分类号： H02K9/00
CPC分类号： H02K9/19 , H02K1/20 , H02K3/24 , H02K9/005
摘要： A cooling structure of a stator, including a case that accommodates a rotating electrical machine, and cooling a coil end portion protruding from a stator core included in the stator of the rotating electrical machine. The structure supplies a cooling medium from the stator axial direction toward a gap that is formed between an inner surface of the case and an outer edge of the stator core. The cooling medium introducing gap is formed above a portion of the coil end portion to which the cooling medium is to be supplied. A storage space forming member is provided along an outer peripheral surface of the coil end portion. The storage space forming member has a contact portion having a first contact portion that contacts the inner surface of the case to close the cooling medium storage space on the one side in the stator axial direction.
摘要翻译：定子的冷却结构，包括容纳旋转电机的壳体，并且冷却从包括在旋转电机的定子中的定子铁芯突出的线圈端部。结构从定子轴向朝向形成在壳体的内表面和定子芯的外边缘之间的间隙提供冷却介质。冷却介质导入间隙形成在要供给冷却介质的线圈端部的一部分的上方。沿着线圈端部的外周面设置存储空间形成构件。存储空间形成构件具有接触部，该接触部具有与壳体的内表面接触的第一接触部，以在定子轴向的一侧闭合冷却介质容纳空间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式