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    • 74. 发明授权
    • Curable silicone composition
    • 可固化硅酮组合物
    • US08044153B2
    • 2011-10-25
    • US12093053
    • 2006-11-08
    • Shinichi YamamotoTomoko KatoHiroji EnamiYoshitsugu Morita
    • Shinichi YamamotoTomoko KatoHiroji EnamiYoshitsugu Morita
    • C08G77/12C08G77/20C08L83/05C08L83/07
    • C08L83/04C08G77/12C08G77/20C08L83/00C08K5/56
    • A curable silicone composition comprising at least the following components: (A) a diorganopolysiloxane having in one molecule at least two alkenyl groups; (B) at least two resin-like organopolysiloxanes that have different mass-average molecular weights as reduced into standard polystyrene measured gel permeation chromatography and that are composed of SiO4/2 units, R12R2SiO1/2 units, and R13SiO1/2 units, wherein R1 is an optionally substituted univalent hydrocarbon group that is free of aliphatic unsaturated bonds and R2 is an alkenyl group; (C) an organopolysiloxane that contains in one molecule at least two silicon-bonded hydrogen atoms; and (D) a hydrosilylation catalyst; possesses excellent flowability and filling ability and that can be prepared without extreme viscosity even if the composition contains resin-like organopolysiloxanes required to form a cured silicone body of appropriate strength and hardness.
    • 至少包含以下组分的可固化的硅氧烷组合物:(A)在一个分子中具有至少两个烯基的二有机聚硅氧烷; (B)将至少两种具有不同质均分子量的树脂状有机聚硅氧烷降低成标准聚苯乙烯测量的凝胶渗透色谱法,并由SiO 4/2单元,R 12 R 2 SiO 1/2单元和R 13 SiO 1/2单元组成,其中R 1 是不含脂族不饱和键的任意取代的一价烃基,R 2是烯基; (C)在一个分子中含有至少两个与硅键合的氢原子的有机聚硅氧烷; 和(D)氢化硅烷化催化剂; 具有优异的流动性和填充能力,并且即使组合物含有形成具有适当强度和硬度的固化的硅氧烷体所需的树脂状有机聚硅氧烷,也可以制备而不具有极高的粘度。
    • 78. 发明授权
    • Semiconductor memory device and method of controlling semiconductor memory device
    • 半导体存储器件及半导体存储器件的控制方法
    • US07596025B2
    • 2009-09-29
    • US11790974
    • 2007-04-30
    • Shinichi Yamamoto
    • Shinichi Yamamoto
    • G11C16/04
    • G11C16/12
    • A semiconductor memory device has a nonvolatile memory cell to which data writing operation is limited to a predetermined logic value. In the case of rewriting data “10101010” written in a first memory core to data “01010101”, since the data writing operation includes writing of a logic value “1” opposite to the predetermined logic value, an erasing operation is needed and the data writing is regulated. By rewriting a pointer value stored in a pointer memory in place of performing the erasing operation, an operation of switching a memory core to be selected to a second memory core (data “11111111”) is performed. Data is newly written into the second memory core selected by the rewritten pointer value.
    • 半导体存储器件具有将数据写入操作限制在预定逻辑值的非易失性存储单元。 在写入第一存储器核心的数据“10101010”重写到数据“01010101”的情况下,由于数据写入操作包括写入与预定逻辑值相反的逻辑值“1”,因此需要擦除操作,并且数据 写作规范。 通过重写存储在指针存储器中的指针值代替执行擦除操作,执行将要选择的存储器内核切换到第二存储器内核(数据“11111111”)的操作。 数据被新写入由重写指针值所选择的第二存储器核心。
    • 80. 发明授权
    • Plasma display panel
    • 等离子显示面板
    • US07573200B2
    • 2009-08-11
    • US10577979
    • 2004-11-10
    • Shinichi YamamotoMikihiko NishitaniYukihiro Morita
    • Shinichi YamamotoMikihiko NishitaniYukihiro Morita
    • H01J1/62H01J17/49
    • H01J11/40H01J11/12
    • An object of the present invention is to reduce power consumption in a plasma display panel (PDP) by reducing the discharge firing voltage, while suppressing the occurrence of discharge variability when the PDP is driven, as well as ensuring the wall-charge holding performance of a protective film surface. To achieve this, a front panel of a PDP of the present invention has a catalyst layer dispersed on a surface of display electrodes formed in stripes on one side of a glass substrate, and needle crystals composed of graphite formed to stand upright on the catalyst layer. The needle crystals form a phase-separated structure with the materials of a dielectric film and a protective film.
    • 本发明的目的是通过降低放电点火电压来降低等离子体显示面板(PDP)的功耗,同时抑制PDP驱动时的放电变化的发生,以及确保壁电荷保持性能 保护膜表面。 为了实现这一点,本发明的PDP的前面板具有分散在玻璃基板的一面上形成为条纹的显示电极的表面上的催化剂层,以及在催化剂层上直立形成的由石墨构成的针状晶体 。 针状晶体与介电膜和保护膜的材料形成相分离的结构。