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71. 发明申请

US20100156054A1 HIGH TEMPERATURE ELECTROSTATIC CHUCK BONDING ADHESIVE 有权
标题翻译：高温静电胶粘剂粘合剂
公开(公告)号：US20100156054A1
公开(公告)日：2010-06-24
申请号：US12640496
申请日：2009-12-17
申请人： Jennifer Y. Sun , Senh Thach , Ren-Guan Duan
发明人： Jennifer Y. Sun , Senh Thach , Ren-Guan Duan
IPC分类号： H01L21/683 , C09J5/06 , C08L83/06 , H02N13/00
CPC分类号： H01L21/6833 , C08K3/22 , C08K3/28 , C08K2003/2227 , C08K2003/282 , C09D183/04 , C09J11/04 , C09J183/04 , H01L21/6831 , H02N13/00 , Y10T279/23 , Y10T279/34
摘要： Methods and apparatus for bonding an electrostatic chuck to a component of a substrate support are provided herein. In some embodiments, an adhesive for bonding components of a substrate support may include a matrix of silicon-based polymeric material having a filler dispersed therein. The silicon based polymeric material may be a polydimethylsiloxane (PDMS) structure having a molecular weight with a low molecular weight (LMW) content Σ D3-D10 of less than about 500 ppm. In some embodiments, the filler may comprise between about 50 to about 70 percent by volume of the adhesive layer. In some embodiments, the filler may comprise particles of aluminum oxide (Al2O3), aluminum nitride (AlN), yttrium oxide (Y2O3), or combinations thereof. In some embodiments, the filler may comprise particles having a diameter of about 10 nanometers to about 10 microns.
摘要翻译：本文提供了用于将静电卡盘结合到基板支撑件的部件的方法和装置。在一些实施例中，用于粘合基底支撑件的部件的粘合剂可以包括其中分散有填料的硅基聚合物材料的基体。硅基聚合物材料可以是具有低分子量（LMW）含量＆Sgr的分子量的聚二甲基硅氧烷（PDMS）结构。 D3-D10小于约500ppm。在一些实施方案中，填料可以占粘合剂层的约50至约70体积％。在一些实施例中，填料可以包括氧化铝（Al 2 O 3），氮化铝（AlN），氧化钇（Y 2 O 3）或其组合的颗粒。在一些实施方案中，填料可以包含直径为约10纳米至约10微米的颗粒。

72. 发明申请

US20100140222A1 FILLED POLYMER COMPOSITION FOR ETCH CHAMBER COMPONENT 审中-公开
标题翻译：用于蚀刻室组件的填充聚合物组合物
公开(公告)号：US20100140222A1
公开(公告)日：2010-06-10
申请号：US12632712
申请日：2009-12-07
申请人： Jennifer Y. Sun , Ren-Guan Duan , Senh Thach , Li Xu
发明人： Jennifer Y. Sun , Ren-Guan Duan , Senh Thach , Li Xu
IPC分类号： C08K3/10 , C08K3/16 , C08K3/28 , C08K3/08 , C08K3/34 , C08K3/22 , B32B7/12 , C23F1/02 , C23F1/08
CPC分类号： C09K3/10 , Y10T428/2857
摘要： A filled polymer composition having improved plasma resistance is disclosed. The composition includes a particle filler dispersed in a polymer matrix. The particle filler can be Nb2O5, YF3, AlN, SiC or Si3N4 and rare earth oxides. In an embodiment, the composition is utilized as a bonding adhesive for electrostatic chuck, bonding adhesive for shower head, bonding adhesive for liner, sealing material, O-ring, or plastic component.
摘要翻译：公开了具有改善的等离子体电阻的填充聚合物组合物。该组合物包括分散在聚合物基质中的颗粒填料。颗粒填料可以是Nb2O5，YF3，AlN，SiC或Si3N4和稀土氧化物。在一个实施方案中，组合物用作静电卡盘的粘合剂，用于喷头的粘合剂，衬垫的粘合剂，密封材料，O形环或塑料组分。

73. 发明授权

US07718559B2 Erosion resistance enhanced quartz used in plasma etch chamber 有权
标题翻译：用于等离子体蚀刻室的耐腐蚀性增强的石英
公开(公告)号：US07718559B2
公开(公告)日：2010-05-18
申请号：US11738030
申请日：2007-04-20
申请人： Jie Yuan , Jennifer Y. Sun , Renguan Duan
发明人： Jie Yuan , Jennifer Y. Sun , Renguan Duan
IPC分类号： C03C3/06 , C03C3/04
CPC分类号： C03C3/06 , C03B32/00 , C03B2201/24 , C03B2201/34 , C03B2201/36 , C03C2201/3411 , C03C2201/36 , C03C2203/54 , H01L21/67069 , H01L21/68721 , H01L21/68735 , H01L21/68757 , Y02P40/57 , Y10S156/915
摘要： A method of fabricating doped quartz component is provided herein. In one embodiment, the doped quartz component is a yttrium doped quartz ring configured to support a substrate. In another embodiment, the doped quartz component is a yttrium and aluminum doped cover ring. In yet another embodiment, the doped quartz component is a yttrium, aluminum and nitrogen containing cover ring.
摘要翻译：本文提供了一种制造掺杂石英组分的方法。在一个实施例中，掺杂的石英组件是被配置为支撑衬底的掺钇的石英环。在另一个实施例中，掺杂的石英组件是掺钇和铝的覆盖环。在另一个实施方案中，掺杂的石英组分是含钇，铝和氮的覆盖环。

74. 发明授权

US07473152B1 Sealing of flat-panel device 失效
标题翻译：密封平板设备
公开(公告)号：US07473152B1
公开(公告)日：2009-01-06
申请号：US10768806
申请日：2004-01-30
申请人： Paul N. Ludwig , Theodore S. Fahlen , Shinji Kanagawa , Jennifer Y. Sun
发明人： Paul N. Ludwig , Theodore S. Fahlen , Shinji Kanagawa , Jennifer Y. Sun
IPC分类号： H01J9/00
CPC分类号： H01J9/261 , H01J2211/48 , H01J2329/867 , H01J2329/8675
摘要： A flat-panel display is hermetically sealed by a process in which a first plate structure (30) is positioned generally opposite a second plate structure (32) such that sealing material (34) provided over the second plate structure lies between the plate structures. In a gravitational sealing technique, the first plate structure is positioned vertically below the second plate structure. The sealing material is heated so that it moves vertically downward under gravitational influence to meet the first plate structure and seal the plate structures together. In a global-heating gap-jumping technique, the plate structures and sealing material are globally heated to cause the sealing material to jump a gap between the sealing material and the first plate structure. When the first plate structure is positioned vertically above the second plate structure, the sealing material moves vertically upward to meet the first plate structure and close the gap.
摘要翻译：平板显示器通过其中第一板结构（30）大致相对于第二板结构（32）定位的过程而气密地密封，使得设置在第二板结构上方的密封材料（34）位于板结构之间。在重力密封技术中，第一板结构位于第二板结构的垂直下方。密封材料被加热，使得其在重力作用下垂直向下移动以满足第一板结构并将板结构密封在一起。在全局加热间隙跳跃技术中，板结构和密封材料被全局加热，使得密封材料在密封材料和第一板结构之间跳跃间隙。当第一板结构垂直地位于第二板结构上方时，密封材料垂直向上移动以满足第一板结构并闭合间隙。

75. 发明授权

US06682627B2 Process chamber having a corrosion-resistant wall and method 失效
标题翻译：处理室具有耐腐蚀壁和方法
公开(公告)号：US06682627B2
公开(公告)日：2004-01-27
申请号：US09962626
申请日：2001-09-24
申请人： Shamouil Shamouilian , Jennifer Y. Sun , Ananda H. Kumar
发明人： Shamouil Shamouilian , Jennifer Y. Sun , Ananda H. Kumar
IPC分类号： H05H100
CPC分类号： C04B41/009 , C04B41/4842 , C04B41/83 , H01J37/32467 , H01J2237/022 , C04B35/00 , C04B35/565
摘要： A substrate processing chamber has a substrate support, a gas supply, a gas exhaust, a gas energizer, and a wall about the substrate support, the wall having a porous ceramic material at least partially infiltrated with a fluorinated polymer, whereby a substrate on the substrate support may be processed by gas introduced by the gas supply, energized by the gas energizer, and exhausted by the gas exhaust.
摘要翻译：衬底处理室具有衬底支撑件，气体供应器，气体排出器，气体激发器和围绕衬底支撑件的壁，所述壁具有至少部分地被氟化聚合物渗透的多孔陶瓷材料，由此，衬底支撑件可以由气体源引入的气体进行处理，由气体激发器激励并被排气排出。

76. 发明授权

US06278066B1 Self-standing spacer wall structures 失效
标题翻译：自立间隔壁结构
公开(公告)号：US06278066B1
公开(公告)日：2001-08-21
申请号：US08771453
申请日：1996-12-20
申请人： Theodore S. Fahlen , Alfred S. Conte , Robert M. Duboc, Jr. , George B. Hopple , John K. O'Reilly , Vasil M. Chakarov , Robert L. Marion , Steve T. Cho , Robert G. Neimeyer , Jennifer Y. Sun , David L. Morris , Christopher J. Spindt , Kollengode S. Narayanan
发明人： Theodore S. Fahlen , Alfred S. Conte , Robert M. Duboc, Jr. , George B. Hopple , John K. O'Reilly , Vasil M. Chakarov , Robert L. Marion , Steve T. Cho , Robert G. Neimeyer , Jennifer Y. Sun , David L. Morris , Christopher J. Spindt , Kollengode S. Narayanan
IPC分类号： H05K111
CPC分类号： H01J9/242 , H01J29/864 , H01J31/127 , H01J2329/8625 , H01J2329/864 , H01J2329/8645 , H01J2329/8665 , Y10T29/49004 , Y10T29/49117
摘要： A spacer (100 or 600/1000A/1000B) situated between a faceplate structure (301) and a backplate structure (302) of a flat panel display is configured to be self standing. In one implementation, a pair of spacer feet (111 or 113 and 112 or 114) are located over the same face surface, or over opposite face surfaces, of a spacer wall (101) near opposite ends of the wall. An edge electrode (121 or 122) is located over an edge surface of the spacer adjacent to the faceplate structure or the backplate structure. In another implementation, a spacer clip (1000A or 1000B) clamps opposite face surfaces of a spacer wall (600) largely at one end of the wall.
摘要翻译：位于平板显示器的面板结构（301）和背板结构（302）之间的间隔物（100或600 / 1000A / 1000B）构造成自立。在一个实施方式中，一对间隔脚（111或113和112或114）位于靠近壁的相对端的间隔壁（101）的相同的面表面上或相对的表面上方。边缘电极（121或122）位于隔板的与面板结构或背板结构相邻的边缘表面上方。在另一实施方案中，间隔夹（1000A或1000B）主要在壁的一端处夹紧间隔壁（600）的相对的面表面。

77. 发明申请

US20120138472A1 METHOD OF FORMING A PROCESS CHAMBER COMPONENT HAVING ELECTROPLATED YTTRIUM CONTAINING COATING 审中-公开
标题翻译：形成包含电镀铝酸盐的工艺室组分的方法
公开(公告)号：US20120138472A1
公开(公告)日：2012-06-07
申请号：US13372435
申请日：2012-02-13
申请人： Nianci HAN , Li Xu , Hong Shih , Yang Zhang , Danny Lu , Jennifer Y. Sun
发明人： Nianci HAN , Li Xu , Hong Shih , Yang Zhang , Danny Lu , Jennifer Y. Sun
IPC分类号： C25D5/10 , C25D5/50
CPC分类号： C25D3/54 , C23C16/4404 , C23C16/4411 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/3455 , C23C28/36 , C23C28/42 , C23C30/00 , C23C30/005 , C25D3/44 , C25D3/56 , C25D5/18 , C25D5/50 , H01J37/32477 , H01L21/67115 , Y10T428/12458 , Y10T428/12611 , Y10T428/12618 , Y10T428/12667 , Y10T428/12736 , Y10T428/12778 , Y10T428/12806
摘要： Methods of fabricating a chamber component capable of being exposed to a plasma in a process chamber includes: providing a component structure composed of metal; immersing the surface of the component structure in an electroplating bath comprising first metal electrolyte species and second metal electrolyte species; forming a cathode by connecting the component structure to a negative terminal of a voltage source; immersing in the electroplating bath, an anode comprising an inert material or material to be electroplated, and connecting the anode to a positive terminal of the voltage source; and electroplating a layer having a concentration gradient of the first metal, second metal, or both.
摘要翻译：制造能够在处理室中暴露于等离子体的室部件的方法包括：提供由金属构成的部件结构; 将组件结构的表面浸入包括第一金属电解质种类和第二金属电解质种类的电镀浴中; 通过将部件结构连接到电压源的负端来形成阴极; 浸渍在电镀浴中，包含惰性材料或待电镀材料的阳极，并将阳极连接到电压源的正端子; 以及电镀具有第一金属，第二金属或两者的浓度梯度的层。

78. 发明授权

US07833401B2 Electroplating an yttrium-containing coating on a chamber component 有权
标题翻译：在腔室部件上电镀含钇的涂层
公开(公告)号：US07833401B2
公开(公告)日：2010-11-16
申请号：US11766723
申请日：2007-06-21
申请人： Nianci Han , Li Xu , Hong Shih , Yang Zhang , Danny Lu , Jennifer Y. Sun
发明人： Nianci Han , Li Xu , Hong Shih , Yang Zhang , Danny Lu , Jennifer Y. Sun
IPC分类号： C25D5/10 , C25D5/50 , C25D3/54
CPC分类号： C25D3/54 , C23C16/4404 , C23C16/4411 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/3455 , C23C28/36 , C23C28/42 , C23C30/00 , C23C30/005 , C25D3/44 , C25D3/56 , C25D5/18 , C25D5/50 , H01J37/32477 , H01L21/67115 , Y10T428/12458 , Y10T428/12611 , Y10T428/12618 , Y10T428/12667 , Y10T428/12736 , Y10T428/12778 , Y10T428/12806
摘要： A method of forming a component capable of being exposed to a plasma in a process chamber comprises forming a structure comprising a surface and electroplating yttrium, and optionally aluminum or zirconium, onto the surface. Thereafter, the electroplated layer can be annealed to oxide the yttrium and other electroplated species.
摘要翻译：形成能够在处理室中暴露于等离子体的组分的方法包括在表面上形成包括表面和电镀钇以及任选的铝或锆的结构。此后，可以将电镀层退火以氧化钇和其它电镀物质。

79. 发明申请

US20100180426A1 PARTICLE REDUCTION TREATMENT FOR GAS DELIVERY SYSTEM 审中-公开
标题翻译：用于气体输送系统的颗粒减少处理
公开(公告)号：US20100180426A1
公开(公告)日：2010-07-22
申请号：US12356687
申请日：2009-01-21
申请人： DAVID DATONG HUO , Irene Ai-Lin Chou , David Koonce , Jennifer Y. Sun
发明人： DAVID DATONG HUO , Irene Ai-Lin Chou , David Koonce , Jennifer Y. Sun
IPC分类号： B23P17/00
CPC分类号： C23C16/4401 , Y10T29/4998
摘要： Methods and apparatus for reducing particles in a gas delivery system are provided herein. In some embodiments, a method of fabricating a gas distribution apparatus, such as a gas distribution plate or nozzle, for a semiconductor process chamber includes providing a gas distribution apparatus having one or more apertures adapted to flow a gas therethrough. A slurry is flowed through the one or more apertures to remove a damaged surface from sidewalls of the plurality of apertures. In some embodiments, the gas distribution apparatus may be oxidized before or after flowing the slurry through the one or more apertures. In some embodiments, the gas distribution apparatus may be conditioned by providing RF power to the gas distribution plate for a desired period of time.
摘要翻译：本文提供了用于减少气体输送系统中的颗粒的方法和装置。在一些实施例中，制造用于半导体处理室的气体分配装置（例如气体分配板或喷嘴）的方法包括提供具有适于使气体流过其中的一个或多个孔的气体分配装置。浆料流过一个或多个孔以从多个孔的侧壁去除受损表面。在一些实施例中，气体分配装置可以在使浆料流过一个或多个孔之前或之后被氧化。在一些实施例中，可以通过在气体分布板上提供RF功率达到期望的时间段来调节气体分配设备。

80. 发明申请

US20090025751A1 Method of removing contaminants from a coating surface comprising an oxide or fluoride of a group IIIB metal 有权
标题翻译：从包含IIIB族金属的氧化物或氟化物的涂层表面除去污染物的方法
公开(公告)号：US20090025751A1
公开(公告)日：2009-01-29
申请号：US12284540
申请日：2008-09-22
申请人： Xikun Wang , Li Xu , Jennifer Y. Sun
发明人： Xikun Wang , Li Xu , Jennifer Y. Sun
IPC分类号： B08B3/08 , B08B3/12
CPC分类号： C30B35/00 , C23C4/11 , C23C4/18 , C23C14/00 , C23C16/4404 , C23C28/042 , Y10S134/902 , Y10T428/26
摘要： Disclosed herein is a cleaning method useful in removing contaminants from a surface of a coating which comprises an oxide or fluoride of a Group III B metal. Typically the coating overlies an aluminum substrate which is present as part of a semiconductor processing apparatus. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3.
摘要翻译：本文公开了一种可用于从包含IIIBB族金属的氧化物或氟化物的涂层表面除去污染物的清洁方法。通常，涂层覆盖作为半导体处理装置的一部分存在的铝基板。涂层通常包含Y，Sc，La，Ce，Eu，Dy等的氧化物或氟化物，或钇 - 铝 - 石榴石（YAG）。涂层可以进一步包含约20体积％或更少的Al 2 O 3。

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