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71. 发明申请

US20110062409A1 PHASE CHANGE MEMORY STRUCTURE WITH MULTIPLE RESISTANCE STATES AND METHODS OF PROGRAMMING AND SENSING 有权
标题翻译：具有多种电阻状态的相变记忆结构及编程和感测方法
公开(公告)号：US20110062409A1
公开(公告)日：2011-03-17
申请号：US12949844
申请日：2010-11-19
申请人： Jun Liu , Mike Violette
发明人： Jun Liu , Mike Violette
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , G11C2211/5631 , G11C2211/5632 , G11C2211/5634 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/144 , H01L45/165 , H01L45/1675 , Y10S977/754
摘要： A phase change memory structure with multiple resistance states and methods of forming, programming, and sensing the same. The memory structure includes two or more phrase change elements provided between electrodes. Each phase change element has a respective resistance curve as a function of programming voltage which is shifted relative to the resistance curves of other phase change elements. In one example structure using two phase change elements, the memory structure is capable of switching among four resistance states.
摘要翻译：具有多个电阻状态的相变存储器结构及其形成，编程和感测方法。存储器结构包括在电极之间提供的两个或更多个短语改变元件。每个相变元件具有作为编程电压的函数的相应电阻曲线，其相对于其它相变元件的电阻曲线偏移。在使用两个相变元件的一个示例结构中，存储器结构能够在四个电阻状态之间切换。

72. 发明申请

US20110058406A1 RESISTIVE MEMORY 有权
标题翻译：电阻记忆
公开(公告)号：US20110058406A1
公开(公告)日：2011-03-10
申请号：US12946596
申请日：2010-11-15
申请人： Yantao Ma , Jun Liu
发明人： Yantao Ma , Jun Liu
IPC分类号： G11C11/21 , G11C11/02 , G11C11/16
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1693 , G11C11/1697 , G11C13/0004 , G11C13/0007 , G11C13/0014 , G11C13/0016 , G11C13/0038 , G11C13/0069 , G11C2013/0073 , G11C2013/0078 , G11C2213/31 , G11C2213/32
摘要： The present disclosure includes resistive memory devices and systems having resistive memory cells, as well as methods for operating the resistive memory cells. One memory device embodiment includes at least one resistive memory element, a programming circuit, and a sensing circuit. For example, the programming circuit can include a switch configured to select one of N programming currents for programming the at least one resistive memory element, where each of the N programming currents has a unique combination of current direction and magnitude, with N corresponding to the number of resistance states of the at least one memory element. In one or more embodiments, the sensing circuit can be arranged for sensing of the N resistance states.
摘要翻译：本公开包括具有电阻存储器单元的电阻式存储器件和系统，以及用于操作电阻存储器单元的方法。一个存储器件实施例包括至少一个电阻存储器元件，编程电路和感测电路。例如，编程电路可以包括被配置为选择N个编程电流之一以用于编程至少一个电阻性存储器元件的开关，其中N个编程电流中的每一个具有电流方向和幅度的唯一组合，N对应于至少一个存储元件的电阻状态数。在一个或多个实施例中，感测电路可被布置用于感测N电阻状态。

73. 发明授权

US07876603B2 Spin current generator for STT-MRAM or other spintronics applications 有权
标题翻译：用于STT-MRAM或其他自旋电子学应用的自旋电流发生器
公开(公告)号：US07876603B2
公开(公告)日：2011-01-25
申请号：US12242228
申请日：2008-09-30
申请人： Jun Liu , Gurtej Sandhu
发明人： Jun Liu , Gurtej Sandhu
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/1284 , G11C11/16 , H01F10/3218 , Y10S977/934
摘要： Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.
摘要翻译：自旋电流发生器和采用自旋电流发生器的系统和方法。自旋电流发生器可以被配置为产生在一个方向上偏振的自旋电流，或者在两个方向上选择性地偏振的自旋电流。自旋电流发生器可用于自旋电子学应用中，其中期望自旋电流。

74. 发明授权

US07858468B2 Memory devices and formation methods 有权
标题翻译：记忆装置和形成方法
公开(公告)号：US07858468B2
公开(公告)日：2010-12-28
申请号：US12261948
申请日：2008-10-30
申请人： Jun Liu , Gurtej S. Sandhu
发明人： Jun Liu , Gurtej S. Sandhu
IPC分类号： H01L21/8239
CPC分类号： H01L21/02225 , H01L27/2409 , H01L27/2472 , H01L27/2481 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/144 , H01L45/16
摘要： A method includes forming an electrical insulator material over an integrated circuit having a metal-containing conductive interconnect and activating a dopant in a semiconductor material of a substrate to provide a doped region. The doped region provides a junction of opposite conductivity types. After activating the dopant, the substrate is bonded to the insulator material and at least some of the substrate is removed where bonded to the insulator material. After the removing, a memory cell is formed having a word line, an access diode, a state-changeable memory element containing chalcogenide phase change material, and a bit line all electrically connected in series, the access diode containing the junction as a p-n junction. A memory device includes an adhesion material over the insulator material and bonding the word line to the insulator material.
摘要翻译：一种方法包括在具有含金属的导电互连的集成电路上形成电绝缘体材料，并激活衬底的半导体材料中的掺杂剂以提供掺杂区域。掺杂区域提供相反导电类型的结。在激活掺杂剂之后，衬底被结合到绝缘体材料上，并且至少部分衬底在与绝缘体材料接合的情况下被去除。在移除之后，形成具有字线，存取二极管，含有硫族化物相变材料的状态可变存储元件和全部电连接的位线的存储单元，该存储二极管包含该结作为pn结。存储器件包括绝缘体材料上的粘合材料并将字线连接到绝缘体材料上。

75. 发明申请

US20100313260A1 METHOD AND SYSTEM OF PROVIDING FIREWALL IN HANDSET 审中-公开
标题翻译：方法和系统中提供防火墙
公开(公告)号：US20100313260A1
公开(公告)日：2010-12-09
申请号：US12548116
申请日：2009-08-26
申请人： Jun Liu
发明人： Jun Liu
IPC分类号： G06F15/16 , H04M3/42
CPC分类号： H04M1/663
摘要： A method of providing firewall in handset is disclosed. The method includes receiving a request with a telephone number by a handset. The handset determines if the telephone number meets a refusing condition. The refusing condition includes a telephone number interval with at least one number and a symbolic variable. The handset refuses the request of the telephone number if the telephone number meets the refusing condition.
摘要翻译：公开了一种在手机中提供防火墙的方法。该方法包括用手机接收电话号码的请求。手机确定电话号码是否符合拒绝条件。拒绝条件包括具有至少一个号码和符号变量的电话号码间隔。如果电话号码符合拒绝条件，手机拒绝电话号码的请求。

76. 发明申请

US20100283030A1 MEMORY DEVICES AND METHODS OF FORMING THE SAME 有权
标题翻译：记忆装置及其形成方法
公开(公告)号：US20100283030A1
公开(公告)日：2010-11-11
申请号：US12840839
申请日：2010-07-21
申请人： Jun Liu
发明人： Jun Liu
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L45/06 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675 , H01L45/1683
摘要： Memory devices having a plurality of memory cells, with each memory cell including a phase change material having a laterally constricted portion thereof. The laterally constricted portions of adjacent memory cells are vertically offset and positioned on opposite sides of the memory device. Also disclosed are memory devices having a plurality of memory cells, with each memory cell including first and second electrodes having different widths. Adjacent memory cells have the first and second electrodes offset on vertically opposing sides of the memory device. Methods of forming the memory devices are also disclosed.
摘要翻译：具有多个存储单元的存储器件，每个存储单元包括具有横向收缩部分的相变材料。相邻存储单元的横向收缩部分垂直偏移并且位于存储器件的相对侧上。还公开了具有多个存储单元的存储器件，每个存储器单元包括具有不同宽度的第一和第二电极。相邻存储器单元具有在存储器件的垂直相对侧上偏移的第一和第二电极。还公开了形成存储器件的方法。

77. 发明授权

US07822699B2 Adaptive semantic reasoning engine 有权
标题翻译：自适应语义推理引擎
公开(公告)号：US07822699B2
公开(公告)日：2010-10-26
申请号：US11290076
申请日：2005-11-30
申请人： Sanjeev Katariya , Qi Steven Yao , Jun Liu , William D. Ramsey , Jianfeng Gao
发明人： Sanjeev Katariya , Qi Steven Yao , Jun Liu , William D. Ramsey , Jianfeng Gao
IPC分类号： G06N5/00 , G06F17/00
CPC分类号： G06F17/30663
摘要： Provided is an adaptive semantic reasoning engine that receives a natural language query, which may contain one or more contexts. The query can be broken down into tokens or a set of tokens. A task search can be performed on the token or token set(s) to classify a particular query and/or context and retrieve one or more tasks. The token or token set(s) can be mapped into slots to retrieve one or more task result. A slot filling goodness may be determined that can include scoring each task search result and/or ranking the results in a different order than the order in which the tasks were retrieved. The token or token set(s), retrieved tasks, slot filling goodness, natural language query, context, search result score and/or result ranking can be feedback to the reasoning engine for further processing and/or machine learning.
摘要翻译：提供了一种自适应语义推理引擎，其接收可以包含一个或多个上下文的自然语言查询。该查询可以分为令牌或一组令牌。可以对令牌或令牌集执行任务搜索以对特定查询和/或上下文进行分类并检索一个或多个任务。令牌或令牌集可被映射到插槽中以检索一个或多个任务结果。可以确定插槽填充质量，其可以包括对每个任务搜索结果进行评分和/或以与检索任务的顺序不同的顺序对结果进行排序。令牌或令牌集，检索任务，插槽填充良品，自然语言查询，上下文，搜索结果分数和/或结果排名可以反馈到推理引擎用于进一步处理和/或机器学习。

78. 发明申请

US20100202952A1 NANOWIRE SYNTHESIS FROM VAPOR AND SOLID SOURCES 有权
标题翻译：从蒸气和固体源合成NANOWIRE
公开(公告)号：US20100202952A1
公开(公告)日：2010-08-12
申请号：US12368711
申请日：2009-02-10
申请人： Jiguang Zhang , Jun Liu , Zhenguo Yang , Guanguang Xia , Leonard S. Fifield , Donghai Wang , Daiwon Choi , Gordon L. Graff , Larry R. Pederson
发明人： Jiguang Zhang , Jun Liu , Zhenguo Yang , Guanguang Xia , Leonard S. Fifield , Donghai Wang , Daiwon Choi , Gordon L. Graff , Larry R. Pederson
IPC分类号： C01B31/36 , C01B21/068 , C01B33/02 , C01B15/14
CPC分类号： H01M4/134 , B82Y30/00 , B82Y40/00 , C01B33/02 , C01B33/113 , H01M4/386 , H01M4/485 , H01M4/58 , H01M10/052 , H01M2004/021 , Y10S977/721 , Y10S977/722 , Y10S977/762 , Y10S977/775 , Y10S977/843
摘要： Methods of the present invention can be used to synthesize nanowires with controllable compositions and/or with multiple elements. The methods can include coating solid powder granules, which comprise a first element, with a catalyst. The catalyst and the first element should form when heated a liquid, mixed phase having a eutectic or peritectic point. The granules, which have been coated with the catalyst, can then be heated to a temperature greater than or equal to the eutectic or peritectic point. During heating, a vapor source comprising the second element is introduced. The vapor source chemically interacts with the liquid, mixed phase to consume the first element and to induce condensation of a product that comprises the first and second elements in the form of a nanowire.
摘要翻译：本发明的方法可用于合成具有可控组合物和/或具有多种元素的纳米线。所述方法可以包括用催化剂涂覆包含第一元素的固体粉末颗粒。当加热液体，具有共晶或包晶点的混合相时，催化剂和第一元素应形成。已经涂覆有催化剂的颗粒然后可以被加热到大于或等于共晶或包晶点的温度。在加热期间，引入包括第二元件的蒸气源。蒸汽源与液体，混合相化学相互作用以消耗第一元素并诱导包含纳米线形式的第一和第二元素的产物的冷凝。

79. 发明申请

US20100202297A1 METHOD, DEVICE, AND SYSTEM FOR TRAFFIC SWITCHING IN MULTI-PROTOCOL LABEL SWITCHING TRAFFIC ENGINEERING 有权
标题翻译：多协议标签交换交通工程中交通切换的方法，设备和系统
公开(公告)号：US20100202297A1
公开(公告)日：2010-08-12
申请号：US12763351
申请日：2010-04-20
申请人： Jun Liu , Yanjun Liu
发明人： Jun Liu , Yanjun Liu
IPC分类号： H04L12/26
CPC分类号： H04L45/50 , H04L43/0811 , H04L43/10 , H04L45/02 , H04L45/22 , H04L45/28
摘要： A method, device, and system for traffic switching in Multi-Protocol Label Switching Traffic Engineering (MPLS TE) are disclosed. The method includes: transmitting traffic over a standby Label Switching Path (LSP) after detecting fault of an active LSP; detecting that the forwarding entry on the active LSP is delivered completely after the fault of the active LSP is rectified; and switching the traffic to the active LSP, and transmitting the traffic over the active LSP. The present invention ensures that the forwarding entry on the active LSP is delivered completely, and prevents packet loss and traffic loss in the case of switching the traffic back from the standby LSP to the active LSP, thus improving the user experience and enhancing the network availability and stability.
摘要翻译：公开了一种多协议标签交换流量工程（MPLS TE）中流量交换的方法，设备和系统。该方法包括：在检测到活跃LSP的故障后，通过备用标签交换路径（LSP）发送流量; 检测到活动LSP故障修复后，主动LSP上的转发表项完全发送; 并将流量切换到活动LSP，并通过主动LSP传输流量。本发明确保了主动LSP上的转发表项完全传递，在备用LSP切换到主动LSP的情况下，防止报文丢失和流量丢失，提高用户体验，提高网络可用性和稳定性。

80. 发明授权

US07773492B2 Method and apparatus providing high density data storage 有权
标题翻译：提供高密度数据存储的方法和装置
公开(公告)号：US07773492B2
公开(公告)日：2010-08-10
申请号：US11405637
申请日：2006-04-18
申请人： Jun Liu , Mike Violette , Gurtej Sandhu
发明人： Jun Liu , Mike Violette , Gurtej Sandhu
IPC分类号： G11B9/00
CPC分类号： G11B9/04
摘要： A data storage device and methods for storing and reading data are provided. The data storage device includes a data storage medium and second device. The data storage medium has an insulating layer, a first electrode layer over the insulating layer and at least one layer of resistance variable material over the first electrode layer. The second device includes a substrate and at least one conductive point configured to electrically contact the data storage medium.
摘要翻译：提供了一种用于存储和读取数据的数据存储装置和方法。数据存储装置包括数据存储介质和第二装置。数据存储介质具有绝缘层，绝缘层上的第一电极层和第一电极层上的至少一层电阻可变材料。第二装置包括基板和被配置为电接触数据存储介质的至少一个导电点。

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