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    • 77. 发明授权
    • Integrated power amplifier
    • 集成功率放大器
    • US07777572B2
    • 2010-08-17
    • US12563528
    • 2009-09-21
    • Robert Bogdan StaszewskiSee Taur Lee
    • Robert Bogdan StaszewskiSee Taur Lee
    • H03F3/68
    • H03F3/189H03F3/211H03F3/602H03F2200/541
    • Methods to implement low cost, high efficiency, low loss power combiner with novel matching circuits are disclosed. A narrow band power combiner enables a high power and high efficiency radio frequency power amplifier to be realized using multiple low voltage CMOS transistors or micro power amplifiers. The power combiner may be printed on a package substrate and realized either using single layer substrate through edge coupling or multiple layers substrate through broadside coupling. The micro power amplifiers may be fabricated using low voltage CMOS technology and electrical connections between the outputs from the micro power amplifiers and the power combiner may be provided through stud bumps in a flip chip technology. With the tunable matching circuits, the present invention allows the narrow band power combiner to be tuned to different frequencies.
    • 公开了实现具有新型匹配电路的低成本,高效率,低损耗功率组合器的方法。 窄带功率组合器使得能够使用多个低电压CMOS晶体管或微功率放大器实现高功率和高效率的射频功率放大器。 功率组合器可以印刷在封装衬底上,并且通过边缘耦合使用单层衬底或通过宽边耦合实现多层衬底。 微功率放大器可以使用低电压CMOS技术制造,并且来自微功率放大器的输出之间的电连接和功率组合器可以通过倒装芯片技术中的凸块凸块来提供。 利用可调匹配电路,本发明允许将窄带功率组合器调谐到不同的频率。
    • 78. 发明申请
    • INTEGRATED POWER AMPLIFIER
    • 集成功率放大器
    • US20100007423A1
    • 2010-01-14
    • US12563528
    • 2009-09-21
    • Robert Bogdan StaszewskiSee Taur Lee
    • Robert Bogdan StaszewskiSee Taur Lee
    • H03F3/68
    • H03F3/189H03F3/211H03F3/602H03F2200/541
    • Methods to implement low cost, high efficiency, low loss power combiner with novel matching circuits are disclosed. A narrow band power combiner enables a high power and high efficiency radio frequency power amplifier to be realized using multiple low voltage CMOS transistors or micro power amplifiers. The power combiner may be printed on a package substrate and realized either using single layer substrate through edge coupling or multiple layers substrate through broadside coupling. The micro power amplifiers may be fabricated using low voltage CMOS technology and electrical connections between the outputs from the micro power amplifiers and the power combiner may be provided through stud bumps in a flip chip technology. With the tunable matching circuits, the present invention allows the narrow band power combiner to be tuned to different frequencies.
    • 公开了实现具有新型匹配电路的低成本,高效率,低损耗功率组合器的方法。 窄带功率组合器使得能够使用多个低电压CMOS晶体管或微功率放大器实现高功率和高效率的射频功率放大器。 功率组合器可以印刷在封装衬底上,并且通过边缘耦合使用单层衬底或通过宽边耦合实现多层衬底。 微功率放大器可以使用低电压CMOS技术制造,并且来自微功率放大器的输出之间的电连接和功率组合器可以通过倒装芯片技术中的凸块凸块来提供。 利用可调匹配电路,本发明允许将窄带功率组合器调谐到不同的频率。