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71. 发明申请

US20090130817A1 METHOD TO ELIMINATE RE-CRYSTALLIZATION BORDER DEFECTS GENERATED DURING SOLID PHASE EPITAXY OF A DSB SUBSTRATE 有权
标题翻译：消除DSB基板固体相外延生成的再结晶边界缺陷的方法
公开(公告)号：US20090130817A1
公开(公告)日：2009-05-21
申请号：US11941187
申请日：2007-11-16
申请人： Angelo Pinto , Weize Xiong , Manfred Ramin
发明人： Angelo Pinto , Weize Xiong , Manfred Ramin
IPC分类号： H01L21/762
CPC分类号： H01L21/187 , H01L21/02532 , H01L21/02609 , H01L21/02667 , H01L21/76224
摘要： A method for semiconductor processing provides a DSB semiconductor body having a first crystal orientation, a second crystal orientation, and a border region disposed between the first and second crystal orientations. The border region further has a defect associated with an interface of the first crystal orientation and second the second crystal orientation, wherein the defect generally extends a distance into the semiconductor body from a surface of the body. A sacrificial portion of the semiconductor body is removed from the surface thereof, wherein removing the sacrificial portion at least partially removes the defect. The sacrificial portion can be defined by oxidizing the surface at low temperature, wherein the oxidation at least partially consumes the defect. The sacrificial portion can also be removed by CMP. An STI feature may be further formed over the defect after removal of the sacrificial portion, therein consuming any remaining defect.
摘要翻译：一种用于半导体处理的方法提供了具有第一晶体取向，第二晶体取向和设置在第一和第二晶体取向之间的边界区域的DSB半导体本体。边界区域还具有与第一晶体取向和第二晶体取向的界面相关联的缺陷，其中缺陷通常从身体的表面延伸到半导体本体中的距离。从其表面去除半导体本体的牺牲部分，其中去除牺牲部分至少部分地去除缺陷。牺牲部分可以通过在低温下氧化表面来限定，其中氧化至少部分地消耗缺陷。牺牲部分也可以通过CMP去除。在去除牺牲部分之后，可以在缺陷上进一步形成STI特征，其中消耗任何剩余的缺陷。

72. 发明申请

US20080303027A1 Semiconductor Device Made by the Method of Producing Hybrid Orientnation (100) Strained Silicon with (110) Silicon 有权
标题翻译：通过用（110）硅生产混合定向（100）应变硅的方法制造的半导体器件
公开(公告)号：US20080303027A1
公开(公告)日：2008-12-11
申请号：US11760822
申请日：2007-06-11
申请人： Rick L. Wise , Angelo Pinto
发明人： Rick L. Wise , Angelo Pinto
IPC分类号： H01L27/092 , H01L21/8238 , H01L29/06
CPC分类号： H01L21/823807 , H01L21/26506 , H01L21/324 , H01L21/76254 , H01L29/045 , H01L29/665
摘要： There is provided a method of manufacturing a semiconductor device. In one aspect, the method includes providing a strained silicon layer having a crystal orientation located over a semiconductor substrate having a different crystal orientation. A mask is placed over a portion of the strained silicon layer to leave an exposed portion of the strained silicon layer. The exposed portion of the strained silicon layer is amorphized and re-crystallized to a crystal structure having an orientation the same as the semiconductor substrate.
摘要翻译：提供了制造半导体器件的方法。一方面，该方法包括提供具有位于具有不同晶体取向的半导体衬底之上的晶体取向的应变硅层。将掩模放置在应变硅层的一部分上以留下应变硅层的暴露部分。应变硅层的暴露部分非晶化并再结晶成具有与半导体衬底相同的取向的晶体结构。

73. 发明申请

US20080128821A1 Semiconductor Device Manufactured Using Passivation of Crystal Domain Interfaces in Hybrid Orientation Technology 审中-公开
标题翻译：在混合定向技术中使用晶体界面钝化制造的半导体器件
公开(公告)号：US20080128821A1
公开(公告)日：2008-06-05
申请号：US11566263
申请日：2006-12-04
申请人： Angelo Pinto , P.R. Chidambaram , Srinivasan Chakravarthi , Rick L. Wise
发明人： Angelo Pinto , P.R. Chidambaram , Srinivasan Chakravarthi , Rick L. Wise
IPC分类号： H01L29/04 , H01L21/8238
CPC分类号： H01L21/823807 , H01L27/092 , H01L29/045 , H01L29/7833
摘要： The invention provides, in one aspect, a method of forming a semiconductor device including providing a semiconductor substrate that comprises a first portion having a crystal orientation and a second portion located over the first portion and having a different crystal orientation. An interfacial region is located between the first portion and second portion. A passivating dopant is implanted into the interfacial region to passivate unterminated bonds within the interfacial region.
摘要翻译：本发明在一个方面提供一种形成半导体器件的方法，该半导体器件包括提供包括具有晶体取向的第一部分和位于第一部分上方并具有不同晶体取向的第二部分的半导体衬底。界面区域位于第一部分与第二部分之间。将钝化掺杂剂注入界面区域以钝化界面区域内的未终止键。

74. 发明申请

US20060175657A1 Advanced CMOS using super steep retrograde wells 有权
标题翻译：先进的CMOS使用超级陡逆流井
公开(公告)号：US20060175657A1
公开(公告)日：2006-08-10
申请号：US11362908
申请日：2006-02-28
申请人： Jeffrey Babcock , Angelo Pinto , Scott Balster , Alfred Haeusler , Gregory Howard
发明人： Jeffrey Babcock , Angelo Pinto , Scott Balster , Alfred Haeusler , Gregory Howard
IPC分类号： H01L29/76
CPC分类号： H01L29/66659 , H01L21/26506 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/36 , H01L29/78612 , H01L29/78654
摘要： The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).
摘要翻译：本发明是一种用于在MOS晶体管结构中形成超陡掺杂分布的方法。该方法包括在栅极电介质（50）下面形成含碳层（110），并在MOS晶体管的源极和漏极区域（80）形成。含碳层（110）将防止掺杂剂扩散到栅极电介质层（50）正下方的区域（40）中。

75. 发明申请

US20050098093A1 Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer 有权
标题翻译：制造外延硅锗层的方法和包括外延砷原位掺杂硅 - 锗层的集成半导体器件
公开(公告)号：US20050098093A1
公开(公告)日：2005-05-12
申请号：US10934188
申请日：2004-09-02
申请人： Jeffrey Babcock , Scott Balster , Alfred Haeusler , Angelo Pinto , Manfred Schiekofer , Philipp Steinmann , Badih El-Kareh
发明人： Jeffrey Babcock , Scott Balster , Alfred Haeusler , Angelo Pinto , Manfred Schiekofer , Philipp Steinmann , Badih El-Kareh
IPC分类号： C23C16/42 , C23C16/56 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14 , H01L21/205 , H01L21/331 , H01L21/8222 , H01L29/737
CPC分类号： C23C16/42 , C23C16/56 , H01L21/02532 , H01L21/02576
摘要： A method of fabricating an epitaxial silicon-germanium layer for an integrated semiconductor device comprises the step of depositing an arsenic in-situ doped silicon-germanium layer, wherein arsenic and germanium are introduced subsequently into different regions of said silicon-germanium layer during deposition of said silicon-germanium layer. By separating arsenic from germanium any interaction between arsenic and germanium is avoided during deposition thereby allowing fabricating silicon-germanium layers with reproducible doping profiles.
摘要翻译：制造用于集成半导体器件的外延硅 - 锗层的方法包括沉积砷原位掺杂硅 - 锗层的步骤，其中砷和锗随后在沉积期间被引入所述硅 - 锗层的不同区域所述硅 - 锗层。通过从锗中分离砷，可避免在沉积过程中砷和锗之间的相互作用，从而允许制造具有可重复掺杂分布的硅 - 锗层。

76. 发明申请

US20050037588A1 Method for manufacturing and structure of semiconductor device with sinker contact region 有权
标题翻译：具有沉降片接触区域的半导体器件的制造和结构的方法
公开(公告)号：US20050037588A1
公开(公告)日：2005-02-17
申请号：US10939221
申请日：2004-09-10
申请人： Angelo Pinto , Jeffrey Babcock , Michael Schober , Scott Balster , Christoph Dirnecker
发明人： Angelo Pinto , Jeffrey Babcock , Michael Schober , Scott Balster , Christoph Dirnecker
IPC分类号： H01L21/331 , H01L29/417 , H01L27/082 , H01L21/8222
CPC分类号： H01L29/66272 , H01L29/41708
摘要： A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. A first isolation structure is formed adjacent at least a portion of the buried layer. A second isolation structure is formed adjacent at least a portion of the active region. A base layer is formed adjacent at least a portion of the active region. A dielectric layer is formed adjacent at least a portion of the base layer, and then at least part of the dielectric layer is removed at an emitter contact location and at a sinker contact location. An emitter structure is formed at the emitter contact location. Forming the emitter structure includes etching the semiconductor device at the sinker contact location to form a sinker contact region. The sinker contact region has a first depth. The method may also include forming a gate structure. Forming the gate structure includes etching the sinker contact region thereby increasing the first depth of the sinker contact region to a second depth.
摘要翻译：半导体器件的制造方法包括形成半导体衬底的掩埋层。在掩埋层的至少一部分附近形成有源区。在掩埋层的至少一部分附近形成第一隔离结构。在活性区域的至少一部分附近形成第二隔离结构。在活性区域的至少一部分附近形成基底层。在基底层的至少一部分附近形成电介质层，然后在发射极接触位置和沉降片接触位置移除介电层的至少一部分。发射极结构形成在发射极接触位置。形成发射极结构包括在沉降片接触位置蚀刻半导体器件以形成沉降片接触区域。沉降片接触区域具有第一深度。该方法还可以包括形成栅极结构。形成栅极结构包括蚀刻沉降片接触区域，从而将沉降片接触区域的第一深度增加到第二深度。

77. 发明授权

US6146956A PNP lateral bipolar electronic device and corresponding manufacturing process 失效
公开(公告)号：US6146956A
公开(公告)日：2000-11-14
申请号：US87397
申请日：1998-05-29
申请人： Angelo Pinto , Carlo Alemanni
发明人： Angelo Pinto , Carlo Alemanni
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8228 , H01L27/082 , H01L29/732 , H01L29/735 , H01L21/8222
CPC分类号： H01L29/6625 , H01L21/8228 , H01L27/082 , H01L29/735
摘要： The invention relates to a process for making a lateral PNP bipolar electronic device integrated monolithically on a semiconductor substrate together with other bipolar devices of the NPN type, said device being incorporated to an electrically insulated multilayer structure. The device includes a semiconductor substrate doped with impurities of the P type; a first buried layer doped with impurities of the N type to form a base region; and a second layer, overlying the first and having conductivity of the N type, to form an active area with opposite collector and emitter regions being formed in said active area and separated by a base channel region. The width of the base channel region is defined essentially by a contact opening formed above an oxide layer deposited over the base channel region. Advantageously, the contact opening is formed by shifting an emitter mask.

78. 发明授权

US5700783A Method of treating urinary incontinence 失效
标题翻译：治疗尿失禁的方法
公开(公告)号：US5700783A
公开(公告)日：1997-12-23
申请号：US429213
申请日：1995-04-24
申请人： Angelo Pinto
发明人： Angelo Pinto
IPC分类号： A61K38/36 , A61L24/10 , A61K38/00 , A61F6/06 , A61K35/14
CPC分类号： A61K38/363 , A61L24/106 , Y10S514/911 , Y10S530/817
摘要： A method for treating urinary incontinence consisting of injecting human fibrin glue at or near the bladder neck until the urethral outflow resistance is restored. Human fibrin glue is the reaction product of human fibrinogen and thrombin in the presence of calcium chloride as catalyst.
摘要翻译：一种治疗尿失禁的方法，包括在膀胱颈部或附近注射人纤维蛋白胶，直到恢复尿道流出阻力。人纤维蛋白胶是氯化钙作为催化剂存在下人纤维蛋白原和凝血酶的反应产物。

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