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71. 发明授权

US6097528A Microscanner for portable laser diode displays 失效
标题翻译：便携式激光二极管显示器显微镜
公开(公告)号：US6097528A
公开(公告)日：2000-08-01
申请号：US119314
申请日：1998-07-20
申请人： Michael S. Lebby , Jamal Ramdani , Karen E. Jachimowicz
发明人： Michael S. Lebby , Jamal Ramdani , Karen E. Jachimowicz
IPC分类号： H01S5/022 , H01S5/062 , H01S5/40 , G02F1/03 , G02B26/08 , G09G3/04
CPC分类号： H01S5/02236 , H01S5/02252 , H01S5/4025
摘要： A microscanner composed of a semiconductor wafer, having formed as a part thereof a cantilevered portion and having mounted thereon at least one laser diode. The cantilevered portion has electrically interfaced thereto a plurality of interconnects capable of delivering varying voltages. The cantilevered portion is deflected in response to the varying voltages and therefore produces a scanning action about an "x" axis, a "y" axis, or an "x" and "y" axis dependent upon the external varying voltage applied thereto and the design of the cantilevered portion. This scanning action operates to scan the light emitted by the at least one laser diode. The microscanner operates to generate a resultant integrated scanned image. This image can be implemented as either a virtual image display or a projected image display.
摘要翻译：由半导体晶片组成的显微镜，其形成为其一部分为悬臂部分并且安装在其上的至少一个激光二极管。悬臂部分电连接到能够传递变化电压的多个互连。悬臂部分响应于变化的电压而偏转，因此根据施加到其上的外部变化电压而产生围绕“x”轴，“y”轴或“x”和“y”轴的扫描动作，悬臂部分的设计。该扫描动作用于扫描由至少一个激光二极管发射的光。显微镜操作以产生合成的扫描图像。该图像可以被实现为虚拟图像显示或投影图像显示。

72. 发明授权

US09245879B2 Static discharge system 有权
标题翻译：静电放电系统
公开(公告)号：US09245879B2
公开(公告)日：2016-01-26
申请号：US13537443
申请日：2012-06-29
申请人： Alexey Kudymov , Jamal Ramdani
发明人： Alexey Kudymov , Jamal Ramdani
IPC分类号： H01L27/088 , H01L27/06 , H01L29/778 , H01L29/20
CPC分类号： H01L23/60 , H01L21/8252 , H01L27/0274 , H01L27/0605 , H01L27/088 , H01L29/2003 , H01L29/205 , H01L29/404 , H01L29/66462 , H01L29/7786 , H01L29/7787 , H03K17/08104
摘要： A semiconductor circuit includes a three-terminal high voltage semiconductor device, a charge distribution structure and a static discharge system. The charge distribution structure has a plurality of conductors with a floating potential. The charge distribution structure is capacitively coupled to a first terminal of the semiconductor device. The static discharge system removes charge that accumulates on at least a subset of the conductors. The static discharge system removes the charge that accumulates on the subset of conductors when the semiconductor device is in a first state while allowing charge to accumulate on the subset of conductors when the semiconductor device is in a second state.
摘要翻译：半导体电路包括三端高压半导体器件，电荷分配结构和静电放电系统。电荷分布结构具有多个具有浮动电位的导体。电荷分布结构电容耦合到半导体器件的第一端子。静电放电系统去除在至少一个导体子集上积累的电荷。当半导体器件处于第一状态时，当半导体器件处于第二状态时允许电荷累积在导体子集上时，静电放电系统去除累积在导体子集上的电荷。

73. 发明授权

US08802516B2 Normally-off gallium nitride-based semiconductor devices 有权
标题翻译：通常的氮化镓基半导体器件
公开(公告)号：US08802516B2
公开(公告)日：2014-08-12
申请号：US12657757
申请日：2010-01-27
申请人： Jamal Ramdani
发明人： Jamal Ramdani
IPC分类号： H01L21/336 , H01L21/338 , H01L31/0336
CPC分类号： H01L29/225 , H01L29/2003 , H01L29/66462 , H01L29/7786
摘要： A method includes forming a relaxed layer in a semiconductor device. The method also includes forming a tensile layer over the relaxed layer, where the tensile layer has tensile stress. The method further includes forming a compressive layer over the relaxed layer, where the compressive layer has compressive stress. The compressive layer has a piezoelectric polarization that is approximately equal to or greater than a spontaneous polarization in the relaxed, tensile, and compressive layers. The piezoelectric polarization in the compressive layer could be in an opposite direction than the spontaneous polarization in the compressive layer. The relaxed layer could include gallium nitride, the tensile layer could include aluminum gallium nitride, and the compressive layer could include aluminum indium gallium nitride.
摘要翻译：一种方法包括在半导体器件中形成松弛层。该方法还包括在松弛层上形成拉伸层，其中拉伸层具有拉伸应力。该方法还包括在松弛层上形成压缩层，其中压缩层具有压应力。压缩层具有大致等于或大于松弛，拉伸和压缩层中的自发极化的压电极化。压缩层中的压电极化可能与压缩层中的自发极化方向相反。松弛层可以包括氮化镓，拉伸层可以包括氮化镓铝，并且压缩层可以包括铝铟镓氮。

74. 发明授权

US08785305B2 Backside stress compensation for gallium nitride or other nitride-based semiconductor devices 有权
标题翻译：氮化镓或其他氮化物基半导体器件的背面应力补偿
公开(公告)号：US08785305B2
公开(公告)日：2014-07-22
申请号：US12927931
申请日：2010-11-30
申请人： Jamal Ramdani
发明人： Jamal Ramdani
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02667 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02592 , H01L21/02595 , H01L21/02658 , H01L29/2003 , H01L29/7787
摘要： A method includes forming a stress compensation layer over a first side of a semiconductor substrate and forming a Group III-nitride layer over a second side of the substrate. Stress created on the substrate by the Group III-nitride layer is at least partially reduced by stress created on the substrate by the stress compensation layer. Forming the stress compensation layer could include forming a stress compensation layer from amorphous or microcrystalline material. Also, the method could include crystallizing the amorphous or microcrystalline material during subsequent formation of one or more layers over the second side of the substrate. Crystallizing the amorphous or microcrystalline material could occur during subsequent formation of the Group III-nitride layer and/or during an annealing process. The amorphous or microcrystalline material could create no or a smaller amount of stress on the substrate, and the crystallized material could create a larger amount of stress on the substrate.
摘要翻译：一种方法包括在半导体衬底的第一侧上形成应力补偿层，并在衬底的第二面上形成III族氮化物层。通过III族氮化物层在衬底上产生的应力通过应力补偿层在衬底上产生的应力至少部分地减小。形成应力补偿层可以包括从非晶或微晶材料形成应力补偿层。此外，该方法可以包括在随后在衬底的第二侧上形成一层或多层之后使无定形或微晶材料结晶。在随后形成III族氮化物层和/或退火过程期间，可能发生非晶或微晶材料的结晶。无定形或微晶材料在基底上不会产生或少量的应力，并且结晶的材料可能在基底上产生更大量的应力。

75. 发明授权

US08507947B2 High quality GaN high-voltage HFETS on silicon 有权
标题翻译：高品质GaN高电压HFETS硅
公开(公告)号：US08507947B2
公开(公告)日：2013-08-13
申请号：US13316305
申请日：2011-12-09
申请人： Jamal Ramdani , John P. Edwards , Linlin Liu
发明人： Jamal Ramdani , John P. Edwards , Linlin Liu
IPC分类号： H01L31/072
CPC分类号： H01L29/205 , H01L21/0226 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L29/045 , H01L29/1075 , H01L29/2003 , H01L29/778 , H01L29/7786 , H01L29/78
摘要： Substrates of GaN over silicon suitable for forming electronics devices such as heterostructure field effect transistors (HFETs), and methods of making the substrates, are disclosed. Voids in a crystalline Al2O3 film on a top surface of a silicon wafer are formed. The top surface of the silicon wafer is along the silicon crystal orientation. A plurality of laminate layers is deposited over the voids and the Al2O3 film. Each laminate layer includes an AlN film and a GaN film. A transistor or other device may be formed in the top GaN film.
摘要翻译：公开了适用于形成诸如异质结构场效应晶体管（HFET）的电子器件的GaN上的GaN衬底以及制造衬底的方法。形成硅晶片顶表面上的结晶Al 2 O 3膜的空隙。硅晶片的顶表面沿<111>硅晶体取向。在空隙和Al 2 O 3膜上沉积多个层压层。每个层压层包括AlN膜和GaN膜。可以在顶部GaN膜中形成晶体管或其它器件。

76. 发明申请

US20130140605A1 GaN high voltage HFET with passivation plus gate dielectric multilayer structure 失效
标题翻译： GaN高电压HFET具有钝化加栅极电介质多层结构
公开(公告)号：US20130140605A1
公开(公告)日：2013-06-06
申请号：US13373811
申请日：2011-12-01
申请人： Jamal Ramdani , Linlin Liu , John Paul Edwards
发明人： Jamal Ramdani , Linlin Liu , John Paul Edwards
IPC分类号： H01L29/78 , H01L21/20
CPC分类号： H01L29/66462 , H01L21/02247 , H01L21/02249 , H01L21/02252 , H01L21/02274 , H01L21/02315 , H01L21/0234 , H01L21/28264 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/402 , H01L29/42376 , H01L29/513 , H01L29/518 , H01L29/66431 , H01L29/778 , H01L29/7786 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a multi-layer structure for a power transistor device includes performing, within a reaction chamber, a nitrogen plasma strike, resulting in the formation of a nitride layer directly on a nitride-based active semiconductor layer. A top surface of the nitride layer is then exposed to a second source. A subsequent nitrogen-oxygen plasma strike results in the formation of an oxy-nitride layer directly on the nitride layer. The nitride layer comprises a passivation layer and the oxy-nitride layer comprises a gate dielectric of the power transistor device.
摘要翻译：制造用于功率晶体管器件的多层结构的方法包括在反应室内进行氮等离子体冲击，直接在氮化物基有源半导体层上形成氮化物层。然后将氮化物层的顶表面暴露于第二源。随后的氮 - 氧等离子体冲击导致氮化物层直接在氮化物层上形成。氮化物层包括钝化层，氧化氮化物层包括功率晶体管器件的栅极电介质。

77. 发明申请

US20120067396A1 Hydrophobic Solar Concentrator and Method of Using and Forming the Hydrophobic Solar Concentrator 审中-公开
标题翻译：疏水太阳能集中器及使用和形成疏水太阳能集中器的方法
公开(公告)号：US20120067396A1
公开(公告)日：2012-03-22
申请号：US12884345
申请日：2010-09-17
申请人： Visvamohan Yegnashankaran , Akshey Sehgal , Jamal Ramdani
发明人： Visvamohan Yegnashankaran , Akshey Sehgal , Jamal Ramdani
IPC分类号： H01L31/052 , H01B13/00 , B05D5/12
CPC分类号： G02B3/12 , H01L31/0543 , Y02E10/52
摘要： A solar concentrator is implemented with a plate structure that has a surface and one or more hydrophobic regions on the surface of the plate structure. The plate structure is transparent to visible light. A fluid is sprayed onto the surface of the plate structure where the fluid forms droplets on the hydrophobic regions. The droplets capture substantially all angles of incident solar radiation and deliver concentrated solar radiation to a corresponding number of solar cells.
摘要翻译：太阳能集中器采用在板结构的表面上具有表面和一个或多个疏水区域的板结构来实现。板结构对可见光是透明的。将流体喷射到板结构的表面上，其中流体在疏水区域上形成液滴。液滴基本捕获入射的太阳辐射的所有角度，并将集中的太阳辐射传递到相应数量的太阳能电池。

78. 发明申请

US20110180848A1 HIGH PERFORMANCE SiGe:C HBT WITH PHOSPHOROUS ATOMIC LAYER DOPING 有权
标题翻译：高性能SiGe：C HBT与磷光体原子层掺杂
公开(公告)号：US20110180848A1
公开(公告)日：2011-07-28
申请号：US13031496
申请日：2011-02-21
申请人： Jamal Ramdani , Craig Richard Printy , Thanas Budri
发明人： Jamal Ramdani , Craig Richard Printy , Thanas Budri
IPC分类号： H01L29/06
CPC分类号： H01L29/7378 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02579 , H01L21/02617
摘要： A base structure for high performance Silicon Germanium:Carbon (SiGe:C) based heterojunction bipolar transistors (HBTs) with phosphorus atomic layer doping (ALD) is disclosed. The ALD process subjects the base substrate to nitrogen gas (in ambient temperature approximately equal to 500 degrees Celsius) and provides an additional SiGe:C spacer layer. During the ALD process, the percent concentrations of Germanium (Ge) and carbon (C) are substantially matched and phosphorus is a preferred dopant. The improved SiGe:C HBT is less sensitive to process temperature and exposure times, and exhibits lower dopant segregation and sharper base profiles.
摘要翻译：公开了具有磷原子层掺杂（ALD）的高性能硅锗：基于碳（SiGe：C）的异质结双极晶体管（HBT）的基础结构。 ALD工艺使基底衬底受氮气（在大约等于500摄氏度的环境温度下），并提供另外的SiGe：C间隔层。在ALD过程中，锗（Ge）和碳（C）的百分比浓度基本匹配，磷是优选的掺杂剂。改进的SiGe：C HBT对工艺温度和曝光时间较不敏感，并且显示较低的掺杂剂偏析和更尖锐的基体分布。

79. 发明申请

US20110152703A1 Heart monitoring system or other system for measuring magnetic fields 有权
标题翻译：心脏监测系统或其他用于测量磁场的系统
公开(公告)号：US20110152703A1
公开(公告)日：2011-06-23
申请号：US12927204
申请日：2010-11-09
申请人： Lawrence H. Zuckerman , Michael X. Maida , Dennis M. Monticelli , James B. Wieser , Jamal Ramdani , Paul Mawson , Moulay Mohamed Ibourk
发明人： Lawrence H. Zuckerman , Michael X. Maida , Dennis M. Monticelli , James B. Wieser , Jamal Ramdani , Paul Mawson , Moulay Mohamed Ibourk
IPC分类号： A61B5/02 , G01R33/02 , G01R33/06 , G01R33/032 , G06F19/00
CPC分类号： A61B5/04007 , A61B5/7239 , A61B5/743
摘要： A system includes at least one first magnetic field sensor configured to measure first and second magnetic fields. The system also includes at least one second magnetic field sensor configured to measure the second magnetic field substantially without measuring the first magnetic field. The system further includes processing circuitry configured to perform signal cancellation to generate measurements of the first magnetic field and to generate an output based on the measurements of the first magnetic field. The sensors could represent magneto-electric sensors. The magneto-electric sensors could be configured to up-convert electrical signals associated with the first and/or second magnetic fields to a higher frequency. The processing circuitry could be configured to identify one or more problems associated with a patient's heart.
摘要翻译：一种系统包括配置成测量第一和第二磁场的至少一个第一磁场传感器。该系统还包括至少一个第二磁场传感器，其配置成基本上不测量第一磁场来测量第二磁场。该系统还包括配置成执行信号消除以产生第一磁场的测量并且基于第一磁场的测量产生输出的处理电路。传感器可以代表磁电传感器。磁电传感器可以被配置为将与第一和/或第二磁场相关联的电信号上变频到更高的频率。处理电路可以被配置为识别与患者心脏相关联的一个或多个问题。

80. 发明申请

US20110148403A1 Magneto-electric sensor with injected up-conversion or down-conversion 有权
标题翻译：具有注入上变频或下变频的磁电传感器
公开(公告)号：US20110148403A1
公开(公告)日：2011-06-23
申请号：US12927205
申请日：2010-11-09
申请人： Lawrence H. Zuckerman , Michael X. Maida , Dennis M. Monticelli , James B. Wieser , Jamal Ramdani
发明人： Lawrence H. Zuckerman , Michael X. Maida , Dennis M. Monticelli , James B. Wieser , Jamal Ramdani
IPC分类号： G01N27/72
CPC分类号： A61B5/04007 , A61B5/7239 , A61B5/743
摘要： A method includes generating an electrical signal representing a magnetic field using a magnetic field sensor having alternating layers of magneto-strictive material and piezo-electric material. The method also includes performing up-conversion or down-conversion so that the electrical signal representing the magnetic field has a higher or lower frequency than a frequency of the magnetic field. The up-conversion or down-conversion is performed before the magnetic field is converted into the electrical signal. The up-conversion or down-conversion could be performed by repeatedly sensitizing and desensitizing the magnetic field sensor. This could be done using a permanent magnet and an electromagnet, an electromagnet without a permanent magnet, or a movable permanent magnet. The up-conversion or down-conversion could also be performed by chopping the magnetic field. The chopping could involve intermittently shielding the magnetic field sensor from the magnetic field or moving the magnetic field sensor with respect to the magnetic field.
摘要翻译：一种方法包括使用具有交替的磁致伸缩材料层和压电材料的磁场传感器来产生表示磁场的电信号。该方法还包括执行上变频或下变频，使得表示磁场的电信号具有比磁场频率更高或更低的频率。在磁场转换成电信号之前执行上转换或下变频。上转换或下转换可以通过使磁场传感器反复敏感和脱敏来进行。这可以使用永磁体和电磁体，没有永磁体的电磁体或可动永磁体来完成。也可以通过切割磁场来执行上变频或下变频。斩波可能会将磁场传感器与磁场间断地屏蔽或相对于磁场移动磁场传感器。

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