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71. 发明专利

DE10145470A1 New bis-o-nitrophenol derivatives, with tert.-butoxycarbonyl protecting groups, used for production of poly-o-hydroxyamide and/or polybenzoxazole polymers for use in microelectronics, e.g. as dielectrics 未知
公开(公告)号：DE10145470A1
公开(公告)日：2003-05-22
申请号：DE10145470
申请日：2001-09-14
申请人： INFINEON TECHNOLOGIES AG
发明人： SEZI RECAI
IPC分类号： C07C205/43 , C07C205/06
摘要： Bis-o-nitrophenol derivatives, where at least one phenolic hydroxyl group is optionally substituted with a tert.-butoxycarbonyl group, are new. Bis-o-nitrophenol derivatives (A), where at least one phenolic hydroxyl group is optionally substituted with a tert.-butoxycarbonyl group of formula (I), are new. -CO-O-CR R R (I) R -R = H, F, -(CH2)nCH3 or -(CF2)nCF3, with the proviso that at least one group is not H; and n = 0-10 Independent claims are included for: (1) poly-o-hydroxyamides and/or polybenzoxazoles obtained from (A); (2) material based on compounds (A) and/or the above polymers for microelectronic components; and (3) microelectronic components containing this material.

72. 发明专利

DE10131536A1 Photo-crosslinkable polymers and crosslinked polymers obtained from them, useful in the microelectronics, automobile and aircraft industries, are new 未知
公开(公告)号：DE10131536A1
公开(公告)日：2003-01-16
申请号：DE10131536
申请日：2001-06-29
申请人： INFINEON TECHNOLOGIES AG
发明人： HALIK MARCUS , WALTER ANDREAS , LOWACK KLAUS , SEZI RECAI
IPC分类号： C08G73/02 , C08G73/10 , C08J5/18 , C09J179/08 , H01L21/312 , C08G83/00 , C09D5/24 , C08J3/24
摘要： Photo-crosslinkable polymers and crosslinked polymers obtained from them are new. The photo-crosslinkable polymers have the formula (I): RA(QXQ)d(Y NHZ (OH)2NHY QXQ)e(Y NHZ (OH)2NH)fRB (I) A(QXQ)a(Y )b(NHZ (OH)2NHY )c (Ia) (Y )g(QXQ)hA (Ib) RA = formula (Ia); RB = formula (Ib); A = H, hetero atom whose free valencies are saturated by H atoms, or a bonding residue which can include up to 30 C atoms and one or more hetero atoms; X = contains 1-500 repeating units; Y to Y = up to 50C double bonding residue, where Y to Y have at least two carbonyl groups, via which Y to Y are bonded to Q or to a Z-group bonded NH group, where at least the Y group is formed from a structural unit of formula (II); R = H or a bonding residue which can include one or more hetero atoms; Z to Z = up to 80C bonding residue, two pairs of which have vicinal bonds to adjacent O and N, from a six-member aromatic or five- or six-member heteroaromatic ring, which is part of the Z group (sic), and the bonding pairs can be from the same or different rings; a = 0 or 1, and when a = 0 and b = 1, A = ORx or NRx2,where Rx can be H or a 20C bonding residue, and when a = 1 and b = 1; b = 0 or 1 and when b = 0 a = 0; c = 1-100; d = 0 or 1; e = 0-20; f = 0-100; g = 0 or 1,and when g = 0 h = 0; and h = 0 or 1, and when h =0 and g =1, A =ORx or NRx2, and when h =1 g = 1. An Independent claim is included for a crosslinked polymer obtainable by subjection of the photo-polymerizable polymer (PPP) to: (a) heat treatment whereby the hydroxyamide group of the PPP is cyclized to an oxazole by splitting off water; and (b) crosslinking of the Y to Y groups, with structural units of formula (II) by radiation with light of wavelength 230 to 600 nm. Steps (a) and (b) can be in any order or simultaneous.

73. 发明专利

DE10015213C1 Electronic or micro-electronic component is formed by number of insulation layers on substrate structured for free surfaces to be activated so that seeded by metallizing solution 未知
公开(公告)号：DE10015213C1
公开(公告)日：2001-09-27
申请号：DE10015213
申请日：2000-03-27
申请人： INFINEON TECHNOLOGIES AG
发明人： LOWACK KLAUS , SCHMID GUENTER , SEZI RECAI , DALLNER CLAUS
IPC分类号： C23C18/16 , H01L21/288 , H01L21/768 , C23C18/18 , H01L21/3205
摘要： To metallize at least one insulation layer in an electronic or micro-electronic component, at least one insulation layer (2) which can be activated is applied to a substrate (1). At least one second insulation layer (3) which can be activated is laid over the first, and is structured. A third insulation layer (4) which cannot be activated is laid over the second, which can be structured. The free activating surfaces are seeded and metallized (5). The layers have a maximum thickness of 50 mu m.

74. 发明专利

DE19957130A1 Metallizing dielectric materials comprises applying a photosensitive dielectric to a substrate, irradiating the dielectric through a mask, growing a metal, subjecting to high temperatures and chemically metallizing 未知
公开(公告)号：DE19957130A1
公开(公告)日：2001-05-31
申请号：DE19957130
申请日：1999-11-26
申请人： INFINEON TECHNOLOGIES AG
发明人： SEZI RECAI , SCHMID GUENTER , LOWACK KLAUS , RADLIK WOLFGANG , HAUSMANN JOERG
IPC分类号： C23C18/20 , C23C18/16 , C23C18/30 , H01L21/288 , H05K3/18 , C23C18/18 , C23C18/28 , H01L21/60
摘要： Process for metallizing dielectric materials comprises: (a) applying a photosensitive dielectric to a substrate; (b) either irradiating the dielectric through a mask, growing a metal and subjecting to high temperatures or growing a metal, irradiating through a mask and removing the excess growing material; and (c) chemically metallizing the dielectric. Preferred Features: The dielectric material is made of a photostructured polymer having a high chemical and thermal resistance. The dielectric is grown using a precious metal compound.

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