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1. 发明专利

JP2004068005A Dielectric material having barrier effect on diffusion of copper 有权
公开(公告)号：JP2004068005A
公开(公告)日：2004-03-04
申请号：JP2003183611
申请日：2003-06-26
申请人： Infineon Technologies Ag , インフィネオンテクノロジーズアクチェンゲゼルシャフト
发明人： SEZI RECAI , WALTHER ANDREAS , MALTENBERGER ANNA , LOWACK KLAUS
IPC分类号： C08G73/02 , C08G69/26 , C08G69/32 , C08G73/22 , H01B3/30 , H01B3/44 , H01L21/312 , H01L21/768 , H01L23/522
CPC分类号： C08G73/22 , C08G69/26 , C08G69/265 , C08G69/32 , H01B3/441 , H01L21/02118 , H01L21/02203 , H01L21/02282 , H01L21/76801
摘要： PROBLEM TO BE SOLVED: To provide a poly(o-hydroxyamide), a preparing process thereof, a polybenzooxazole, a preparing process thereof, a dielectric component containing a polybenzooxazole as a dielectric material and a process for forming this dielectric component, in particularly, to obtain such a polymer having the safety at high temperatures and for use in a microchip as makes it possible to form a minute conductor truck in the microchip. SOLUTION: The novel poly(o-hydroxyamide) is expressed by formula (I). The poly(o-hydroxyamide) can be cyclized to give a polybenzooxazole having a good barrier effect on the diffusion of a metal. The poly(o-hydroxyamide) is coated on a semiconductor substrate, then heated to thereby convert possibly into the polybenzooxazole. A diffusion barrier can be distributed substantially between a semiconductor truck and a dielectric material as the result of the good barrier effect on the diffusion of the metal. COPYRIGHT: (C)2004,JPO

2. 发明专利

JP2004099873A Insulating material for aluminum and copper metallizing 有权
公开(公告)号：JP2004099873A
公开(公告)日：2004-04-02
申请号：JP2003184081
申请日：2003-06-27
申请人： Infineon Technologies Ag , インフィネオンテクノロジーズアクチエンゲゼルシャフト
发明人： SEZI RECAI , WALTER ANDREAS , MALTENBERGER ANNA , LOWACK KLAUS , HALIK MARCUS
IPC分类号： C08G73/02 , C08G69/26 , C08G69/32 , C08G73/22 , H01B3/30
CPC分类号： C08G69/265 , C08G69/26 , C08G69/32 , C08G73/22 , Y10T428/31504 , Y10T428/31678 , Y10T428/31681 , Y10T428/31721
摘要： PROBLEM TO BE SOLVED: To provide a novel polymer easily spreadable on an electronic part with a very favorable electron insulating effect after cyclization, sufficient stability to chemicals and elevated temperatures, good adhesiveness and filling properties. SOLUTION: The present invention relates to an dielectric material for aluminum and copper metallizing being stable at elevated temperature. Polybenzoxazole is prepared by reacting bis-o-aminophenol with a dicarboxylic acid or its activated derivative (acid chloride) to give poly-o-hydroxamide followed by heating for dehydration and cyclization. The dielectric material of this polymer composition is very suitable for filling a narrow trench, surprisingly even though it is dehydrated during cyclization, and the filled trench shows no defect, bubble or crack. The polybenzoxazole has a low dielectric constant (≤2.7) and suitable for an electric insulator and further exhibits favorable adhesiveness to all the surfaces participating in microelectron optics. COPYRIGHT: (C)2004,JPO

3. 发明专利

JP2007084580A Monomer for insulating material used in aluminum technique and copper technique 审中-公开
标题翻译：在铝技术和铜技术中使用的绝缘材料单体
公开(公告)号：JP2007084580A
公开(公告)日：2007-04-05
申请号：JP2006356839
申请日：2006-12-29
申请人： Infineon Technologies Ag , インフィネオンテクノロジーズアクチエンゲゼルシャフト
发明人： WALTHER ANDREAS , GNUECHTEL INGO , MALTENBERGER ANNA , SEZI RECAI , HARTMANN HORST
IPC分类号： C07C215/80 , C07C215/82 , C07B61/00 , C07C201/00 , C07C207/04 , C07C213/02 , C07C217/90
CPC分类号： C07C217/90 , C07C215/80 , C07C2603/24
摘要： PROBLEM TO BE SOLVED: To enable the use of a new starting material that has a small dielectric constant, good high-temperature stability and good chemical stability and enables the preparation of an insulating polymer. SOLUTION: A new bis-o-aminophenol of formula I (wherein M represents a particular group) is provided. The bis-o-aminophenol enables the preparation of a heat-resistant polybenzoxazole. The bis-o-aminophenol is preferably prepared from a corresponding diol, which is first nitrosated. A nitroso compound is then reduced to an amino compound through the hydrogenation using Pd/C and H 2 . COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了能够使用具有小的介电常数，良好的高温稳定性和良好的化学稳定性的新的起始材料，并且能够制备绝缘聚合物。解决方案：提供了新的式I的双邻氨基苯酚（其中M表示特定的基团）。双邻氨基苯酚能够制备耐热聚苯并恶唑。双邻氨基苯酚优选由相应的二醇制备，其首先被亚硝化。然后通过使用Pd / C和H SB 2的氢化将亚硝基化合物还原成氨基化合物。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2004165635A Microelectronics method and structure 有权
公开(公告)号：JP2004165635A
公开(公告)日：2004-06-10
申请号：JP2003296071
申请日：2003-08-20
申请人： Infineon Technologies Ag , インフィネオンテヒノロギーズアーゲーInfineon TechnologiesAG
发明人： SEZI RECAI
IPC分类号： H01L21/302 , H01L21/306 , H01L21/311 , H01L21/312 , H01L21/4763 , H01L21/768 , H01L23/522
CPC分类号： H01L21/7682 , H01L21/31116 , H01L21/312 , H01L21/76841
摘要： PROBLEM TO BE SOLVED: To provide a method for integrating air as a dielectric, and a semiconductor element, having an air layer as the dielectric manufactured using this method. SOLUTION: The method comprises the following process (a) a process of forming the layer of the dielectric patternized on a substrate 1; (b) a process for patternizing the formed dielectric layer; (c) a process of forming a common surface from a conductive metal 3 and the dielectric, by providing the conductive metal 3 to the patternized dielectric layer; (d) a process of forming the layer of an organic dielectric 4 to the layer manufactured in the process c; (e) a process of forming a structure, having air 5 as the dielectric between conductive structures and a consecutive dielectric layer 4 on the upper surface, by making a coating substrate manufactured by this method be to brought into contact with a fluorine-containing compound. COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2004026831A Monomer for insulating material used in aluminum technology and copper technology 审中-公开
公开(公告)号：JP2004026831A
公开(公告)日：2004-01-29
申请号：JP2003180250
申请日：2003-06-24
申请人： Infineon Technologies Ag , インフィネオンテクノロジーズアクチェンゲゼルシャフト
发明人： WALTHER ANDREAS , GNUECHTEL INGO , MALTENBERGER ANNA , SEZI RECAI , HARTMANN HORST
IPC分类号： C07C215/82 , C07B61/00 , C07C213/02 , C07C215/80 , C07C217/90
CPC分类号： C07C217/90 , C07C215/80 , C07C2603/24
摘要： PROBLEM TO BE SOLVED: To obtain a new starting material for forming an insulating polymer which has a small dielectric constant, high-temperature stability, and chemical stability.
SOLUTION: A new bis-o-aminophenol is expressed by formula I (M is a bivalent residue having a specified structure). Heat-resistant polybenzoxazole is formed out of the bis-o-aminophenol. The bis-o-aminophenol is preferably produced by nitrosating a diol which corresponds to the aminophenol to form a nitroso compound, and hydrogenating the nitroso compound with H
2 in the presence of Pd/C, so as to obtain the amino compound by reduction.
COPYRIGHT: (C)2004,JPO

6. 发明申请

WO0138603A3 METALLIZING METHOD FOR DIELECTRICS 审中-公开
标题翻译：用于金属化电介质
公开(公告)号：WO0138603A3
公开(公告)日：2002-01-10
申请号：PCT/DE0003133
申请日：2000-09-07
申请人： INFINEON TECHNOLOGIES AG , SEZI RECAI , SCHMID GUENTER , LOWACK KLAUS , RADLIK WOLFGANG , HAUSSMANN JOERG
发明人： SEZI RECAI , SCHMID GUENTER , LOWACK KLAUS , RADLIK WOLFGANG , HAUSSMANN JOERG
IPC分类号： C23C18/20 , C23C18/16 , C23C18/30 , H01L21/288 , H05K3/18
CPC分类号： H05K3/185 , C23C18/1605 , H05K2203/0525
摘要： The invention relates to a method for metallizing dielectrics during which a photosensitive dielectric is applied to a substrate. The dielectric is then exposed to light though a mask, is seeded with a metal and subjected to a temperature treatment and, afterwards, the dielectric is chemically metallized. Alternatively, the dielectric can be firstly seeded with a metal after being applied to the substrate, and then exposed to light through a mask. Afterwards, excess seeding material is removed and the dielectric is chemically metallized.
摘要翻译：在用于光敏介电被施加到基底电介质的金属化的方法，则该电介质通过掩模曝光，接种有金属和经受高温处理，然后将电介质是化学金属化。可替换地，电介质 - 施加到基片后 - 首先用金属接种并随后通过掩模暴露; 然后过量播种除去和化学金属化的电介质。

7. 发明申请

WO02079297A2 COATING MATERIAL FOR ELECTRONIC COMPONENTS 审中-公开
标题翻译：涂层材料用于电子元件
公开(公告)号：WO02079297A2
公开(公告)日：2002-10-10
申请号：PCT/EP0203577
申请日：2002-03-28
申请人： INFINEON TECHNOLOGIES AG , HALIK MARCUS , LOWACK KLAUS , SEZI RECAI , WALTER ANDREAS
发明人： HALIK MARCUS , LOWACK KLAUS , SEZI RECAI , WALTER ANDREAS
IPC分类号： C08G69/26 , C08G69/32 , C08G73/22 , H01B3/30
CPC分类号： H01B3/305 , C08G69/26 , C08G69/265 , C08G69/32 , C08G73/22
摘要： The invention relates to novel polyhydroxyamide compounds that, in the form of their oxazoles, are suited as a coating material, particularly for electronic components. The invention also relates to a method for producing these novel compounds and to the use thereof.
摘要翻译：本发明涉及新的聚羟基酰胺化合物，其在其恶唑作为涂层材料的形式，特别是用于电子元件是合适的，它们的制备和它们的用途的方法。

8. 发明申请

WO2006013160A3 RESISTIVE MEMORY 审中-公开
标题翻译：电阻式工作记忆
公开(公告)号：WO2006013160A3
公开(公告)日：2006-10-05
申请号：PCT/EP2005053546
申请日：2005-07-21
申请人： INFINEON TECHNOLOGIES AG , WALTER ANDREAS , SEZI RECAI , ENGL REIMUND , MALTENBERGER ANNA , SCHUMANN JOERG , WEITZ THOMAS
发明人： WALTER ANDREAS , SEZI RECAI , ENGL REIMUND , MALTENBERGER ANNA , SCHUMANN JOERG , WEITZ THOMAS
IPC分类号： H01L51/30 , H01L27/28
CPC分类号： H01L51/0052 , B82Y10/00 , G11C13/0014 , H01B1/121 , H01L27/11502 , H01L27/285 , H01L51/0036 , H01L51/0051
摘要： The invention relates to novel memory cells, comprising two electrodes and a layer arranged between the same, made from an active material, comprising (a) a compound of the structure given in general formula (I), where R 1 to R 2 independently = -H, -(CH 2 ) m CH 3 , -phenyl, -O-(CH 2 ) m CH 3 , -O-phenyl, -S(CH 2 ) m CH 3 , -S-aryl, -NR 3 R 4 , -SR or a halide, where R 1 and R 2 can together form a ring and where R 3 and R 4 independently = -H, preferably 1-10 C alkyl, -aryl, -heteroaryl, m = 0 or a whole number from 1-10 and n = a whole number from 2 to 1000 and (b) a compound of general formula (II): where R 5 to R 12 independently = -H, -(CH 2 ) m CH 3 , -phenyl, -0-(CH 2 ) m CH 3 , -O-phenyl, -CO(CH 2 ) m CH 3 , -halogen, -CN and/or -NO 2 , where R 5 and R 6 , or R 6 and R 7 , R 7 and R 8 , R 9 and R 10 , R 10 and R 11 and/or R 11 and R 12 can together form a ring, m having the meaning already given. The invention further relates to a method for production of said cells and the novel application of a composition which may be used as active material for the memory cells.
摘要翻译：有提供具有两个电极新存储单元和活性物质的包含（a）通式（I）的化合物所示结构的插层：（I）其中R _{1 至R _{2 彼此独立地可以具有下列含义：-H， - （CH _{2 ）_{米 CH _{3 ， - 苯基，-O-（CH _{2 ）_{米 CH _{3 ，-O-苯基，-S（CH _{2 ）_{米 CH _{3 ，-S-芳基，-NR _{3 - [R _{4 ，-SR或卤素原子，其中R _{1 和R _{2 可一起形成环，和其中R _{3 和R _{4 独立地 -H，烷基，优选表示具有1-10个碳原子，芳基，杂芳基，m为0或在1-10范围内的整数，n = a是整数2至1000 ; 和（b）通式（II）化合物：其中R _{5 至R _{12 彼此独立地可以具有下列含义：-H， - （CH _{2 ）_{米 CH _{3 ，苯基，-O-（CH _{2 ）_{米 CH < SUB> 3 ，-O-苯基， - CO（CH _{2 ）_{米 CH _{3 ， - 卤素，-CN，和 /或-NO _{2 其中R _{5 和R _{6 或R _{6 和R _{7 < / SUB>，R _{7 和R _{8 ，R _{9 和R _{10 ，R _{10 < / SUB>和R _{11 和/或R _{11 和R _{12 可以一起形成一个环，其中m具有上面给出的含义，其包括，此外，提供了用于制备本发明的细胞的方法和新的使用，其可被用作用于存储单元中的活性物质的组合物。}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}

9. 发明申请

WO2005034172A3 MATERIAL AND CELL STRUCTURE FOR MEMORY APPLICATIONS 审中-公开
标题翻译：材料和细胞结构用于存储器应用
公开(公告)号：WO2005034172A3
公开(公告)日：2005-08-18
申请号：PCT/EP2004010924
申请日：2004-09-30
申请人： INFINEON TECHNOLOGIES AG , SEZI RECAI , WALTER ANDREAS , ENGL REIMUND , MALTENBERGER ANNA , SCHUMANN JOERG
发明人： SEZI RECAI , WALTER ANDREAS , ENGL REIMUND , MALTENBERGER ANNA , SCHUMANN JOERG
IPC分类号： C07C50/04 , C07C50/12 , C07C255/56 , C07D409/04 , C09D5/25 , H01L27/28 , H01L51/05 , H01L51/30 , H01L51/20
CPC分类号： H01L51/0595 , B82Y10/00 , H01L51/0051
摘要： The invention relates to compositions for memory applications, a memory cell comprising said composition along with two electrodes, a method for producing microelectronic components, and the use of the inventive composition during the production of said microelectronic components.
摘要翻译：本发明涉及用于存储应用的组合物，涉及包含上述组合物和两个电极的存储单元，并且还涉及一种用于制造微电子元件以及根据本发明在微电子元件的制造中使用所述组合物。

10. 发明申请

WO2004001842A2 LAYER ASSEMBLY AND METHOD FOR PRODUCING A LAYER ASSEMBLY 审中-公开
标题翻译：层及其制造方法的层结构
公开(公告)号：WO2004001842A2
公开(公告)日：2003-12-31
申请号：PCT/DE0301827
申请日：2003-06-03
申请人： INFINEON TECHNOLOGIES AG , BARTH HANS-JOACHIM , SEZI RECAI
发明人： BARTH HANS-JOACHIM , SEZI RECAI
IPC分类号： H01L21/312 , H01L21/768 , H01L23/522 , H01L21/316
CPC分类号： H01L21/768 , H01L21/7682 , H01L23/5222 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a layer assembly and to a method for producing a layer assembly. This layer assembly comprises a layer that is placed on a substrate. Said layer comprises a first partial region, which is made of a decomposable material, and an adjacent second partial region with a useful structure made of a non-decomposable material. The layer assembly also has a top layer which is arranged on the layer made of a decomposable material and the useful structure. The layer assembly is designed so that the decomposable material can be removed from the layer assembly.
摘要翻译：本发明涉及一种层排列和用于制造层结构的方法。层布置被设置在具有由可分解材料的和用非可降解材料的一种有用的结构旁边的第二部分区域布置在第一部分上的基底层上。此外，该层布置具有分解材料的层和所述有用结构上的覆盖层，其中所述层布置被设置为使得所述可降解材料由层组装的是可移除的。

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