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71. 发明授权

US06921678B2 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device 有权
标题翻译：氮化物半导体的制造方法，氮化物半导体器件的制造方法以及氮化物半导体器件
公开(公告)号：US06921678B2
公开(公告)日：2005-07-26
申请号：US10434063
申请日：2003-05-09
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
IPC分类号： H01S5/30 , H01L21/20 , H01L21/205 , H01L33/00 , H01L33/32 , H01S5/323 , H01S5/343 , H01L21/223
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/0265 , H01L33/32 , H01S5/22 , H01S5/3063 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.
摘要翻译：本发明的制造氮化物半导体的方法包括以下步骤：（1）通过提供含有氮的第一组III源和V族源，在衬底上生长由第一III族氮化物制成的第一半导体层; 和（2）通过提供第二组III源和含有氮的V族源，在第一半导体层上生长由第二III族氮化物制成的第二半导体层。步骤（1）和（2）中的至少一个包括在衬底上提供p型掺杂剂的步骤，并且生长第一半导体层和第二半导体层之间的界面附近的区域，使得 p型掺杂剂局部增加。

72. 发明授权

US06911351B2 Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same 有权
标题翻译：氮化物半导体的制造方法，氮化物半导体器件的制造方法，氮化物半导体器件，半导体发光器件及其制造方法
公开(公告)号：US06911351B2
公开(公告)日：2005-06-28
申请号：US10345377
申请日：2003-01-16
申请人： Isao Kidoguchi , Akihiko Ishibashi , Ryoko Miyanaga , Gaku Sugahara , Masakatsu Suzuki , Masahiro Kume , Yuzaburo Ban , Kiyoyuki Morita , Ayumu Tsujimura , Yoshiaki Hasegawa
发明人： Isao Kidoguchi , Akihiko Ishibashi , Ryoko Miyanaga , Gaku Sugahara , Masakatsu Suzuki , Masahiro Kume , Yuzaburo Ban , Kiyoyuki Morita , Ayumu Tsujimura , Yoshiaki Hasegawa
IPC分类号： H01L21/20 , H01L33/00 , H01L33/12 , H01L33/40 , H01L33/46 , H01S5/20 , H01S5/22 , H01S5/323 , H01S5/40 , H01L21/00
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/0265 , H01L33/007 , H01L33/405 , H01L33/46 , H01S5/2077 , H01S5/2201 , H01S5/32341 , H01S5/4031 , H01S2304/00
摘要： The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of AluGavInwN, wherein 0≦u, v, w≦1 and u+v+w=1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of AlxGayInzN, wherein 0≦x, y, z≦1 and x+y+z=1, by using, as a seed crystal, C planes corresponding to top faces of the convexes exposed from the mask film.
摘要翻译：本发明的氮化物半导体的制造方法包括以下步骤：在衬底上形成AlGaN的第一氮化物半导体层， / SUB，其中0≤u，v，w <= 1，u + v + w = 1; 在所述第一氮化物半导体层的上部形成沿着基板表面方向间隔地延伸的多个凸部; 形成用于覆盖形成在彼此相邻的凸起之间的凹部的底部的掩模膜; 并且在所述第一氮化物半导体层上生长Al 2 O 3的第二氮化物半导体层，其中0 <= x ，y，z <= 1和x + y + z = 1，通过使用对应于从掩模膜暴露的凸起的顶面的C面作为晶种。

73. 发明授权

US06709881B2 Method for manufacturing semiconductor and method for manufacturing semiconductor device 有权
标题翻译：半导体半导体激光光学元件的制造方法
公开(公告)号：US06709881B2
公开(公告)日：2004-03-23
申请号：US09993771
申请日：2001-11-27
申请人： Yoshiaki Hasegawa , Gaku Sugahara , Ryoko Miyanaga
发明人： Yoshiaki Hasegawa , Gaku Sugahara , Ryoko Miyanaga
IPC分类号： H01L2100
CPC分类号： H01L21/30612 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L21/3083 , H01L33/007
摘要： A method for manufacturing a semiconductor includes: a first step of forming an etching stop layer on a first semiconductor layer; and a second step of forming a second semiconductor layer made of a group III-V compound semiconductor on the etching stop layer. An etching rate for the etching stop layer by dry etching is less than an etching rate for the second semiconductor layer.
摘要翻译：一种制造半导体的方法包括：在第一半导体层上形成蚀刻停止层的第一步骤; 以及在蚀刻停止层上形成由III-V族化合物半导体制成的第二半导体层的第二步骤。通过干蚀刻蚀刻停止层的蚀刻速率小于第二半导体层的蚀刻速率。

74. 发明授权

US6072762A Optical disk recording/reproducing method and apparatus for preventing wave length shift during recording and reproducing operations 失效
标题翻译：用于在记录和再现操作期间防止波长偏移的光盘记录/再现方法和装置
公开(公告)号：US6072762A
公开(公告)日：2000-06-06
申请号：US289984
申请日：1999-04-13
申请人： Masahiro Kume , Yuzaburo Ban , Isao Kidoguchi , Satoshi Kamiyama , Ayumu Tsujimura , Akihiko Ishibashi , Yoshiaki Hasegawa , Ryoko Miyanaga
发明人： Masahiro Kume , Yuzaburo Ban , Isao Kidoguchi , Satoshi Kamiyama , Ayumu Tsujimura , Akihiko Ishibashi , Yoshiaki Hasegawa , Ryoko Miyanaga
IPC分类号： G11B7/005 , G11B7/125 , G11B7/135 , G11B11/105
CPC分类号： G11B7/126 , G11B11/10515 , G11B11/10543 , G11B7/005 , G11B7/128 , G11B7/1369 , G11B7/135
摘要： Between a semiconductor laser diode and an optical disk, a collimator lens for collimating a laser beam output from the semiconductor laser diode, a liquid crystal optical shutter for attenuating the collimated beam having passed through the collimator lens, and a beam splitter for splitting reflected light from the optical disk are disposed. In addition, a collective lens for collecting the collimated beam obtained by the collimator lens on a data holding surface of the optical disk is further disposed.
摘要翻译：在半导体激光二极管和光盘之间，用于准直半导体激光二极管输出的激光束的准直透镜，用于衰减通过准直透镜的准直光束的液晶光学快门，以及用于分离反射光的分束器从光盘配置。此外，还设置有用于收集由准直透镜获得的准直光束在光盘的数据保持表面上的集体透镜。

75. 发明申请

US20130238541A1 APPARATUS AND A METHOD FOR RETRIEVING AN OBJECT 有权
标题翻译：装置和检索对象的方法
公开(公告)号：US20130238541A1
公开(公告)日：2013-09-12
申请号：US13670975
申请日：2012-11-07
申请人： Yusuke ENDOH , Hiromasa Shin , Yoshiaki Hasegawa
发明人： Yusuke ENDOH , Hiromasa Shin , Yoshiaki Hasegawa
IPC分类号： G06N5/02
CPC分类号： G06N5/022 , G06F17/30241 , G06T17/30 , G06T2210/21
摘要： According to one embodiment, an object retrieval apparatus includes a query acceptance unit and a collision decision unit. The query acceptance unit is configured to accept a retrieval query indicating (N-1)-dimensional surface in N-dimensional space (N is an integral number larger than or equal to three). The collision decision unit is configured to decide whether the (N−1)-dimensional surface intersects N-dimensional cuboid positioned in the N-dimensional space. The collision decision unit decides by using a plurality of decision functions. The plurality of decision functions includes zero-th˜(N−1)-th decision functions to decide whether at least a part of at least one of X-dimensional face (X is all integral numbers larger than or equal to zero, and smaller than or equal to (N−1)) of the N-dimensional cuboid is included in the (N−1)-dimensional surface.
摘要翻译：根据一个实施例，对象检索装置包括查询接受单元和冲突判定单元。查询接收单元被配置为接受在N维空间中指示（N-1）维表面的检索查询（N是大于或等于3的整数）。碰撞判定单元被配置为确定（N-1）维表面是否与位于N维空间中的N维立方体相交。碰撞判定单元通过使用多个判定函数来决定。所述多个判定函数包括第0〜第（N-1）决定函数，以决定X维面（X）中的至少一部分是否大于或等于零，小于等于零的整数（N-1））N（N-1））的N（N-1）维）包括在（N-1）维表面中。

76. 发明授权

US08222670B2 Semiconductor light emitting element and method for manufacturing same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US08222670B2
公开(公告)日：2012-07-17
申请号：US13109213
申请日：2011-05-17
申请人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/32 , H01L33/38 , H01L33/40 , H01S5/0202 , H01S5/02272 , H01S5/028 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/3202 , H01S2304/04
摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.
摘要翻译：根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。

77. 发明申请

US20120057612A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20120057612A1
公开(公告)日：2012-03-08
申请号：US13294682
申请日：2011-11-11
申请人： Shinji Yoshida , Kenji Orita , Yoshiaki Hasegawa , Atsunori Mochida
发明人： Shinji Yoshida , Kenji Orita , Yoshiaki Hasegawa , Atsunori Mochida
IPC分类号： H01S5/323
CPC分类号： H01S5/32341 , H01S5/0281 , H01S5/0283
摘要： A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 μm−1 or less.
摘要翻译：氮化物半导体器件包括由III族氮化物半导体制成并具有发光小面的多层半导体结构，以及形成为覆盖多层半导体结构的发光面的第一涂膜。第一涂膜是由含有铝的氮化物制成的结晶膜。结晶膜由一组单畴构成，单畴由一组晶体构成，晶粒取向面具有相同的倾斜角度和相同的旋转角度。每单位面积域的边界长度为7μm-1以下。

78. 发明授权

US08082006B2 Base station, receiving apparatus, and receiver trouble diagnosing method 失效
标题翻译：基站，接收设备和接收机故障诊断方法
公开(公告)号：US08082006B2
公开(公告)日：2011-12-20
申请号：US11914264
申请日：2005-12-19
申请人： Yoshiaki Hasegawa , Akihiro Saito , Tomoya Uchiike , Yoshihiro Kanomata
发明人： Yoshiaki Hasegawa , Akihiro Saito , Tomoya Uchiike , Yoshihiro Kanomata
IPC分类号： H04M1/00 , H04B1/38
CPC分类号： H04W88/08 , H04B1/18 , H04B17/21 , H04W24/00
摘要： A receiver of a wireless base station that uses a simple mode to detect a failure is provided, and an SW 201 switches whether an input port of the receiver 133 is to be connected with an antenna 114 or to be terminated. An LNA (a low noise amplifier) 205 amplifies an input signal with a low distortion. SWs 202 and 203 switch between a first path which runs through the LNA 205 and a second path 204 which does not run through the LNA 205. An AGC AMP, the gain of which is controlled such that the output thereof is constant, amplifies the signal with the controlled gain. A base station control section uses the SW 201 to terminate the input port of the receiver so that thermal noise is input to the LNA 205. Further, the SWs 202 and 203 are changed over to determine the normality of the receiver based on the fact that a first gain of an AGC-AMP 211 when connected to the first path, a second gain of the AGC-AMP 211 when connected to the second path, and a difference between the first and second gains fall within their respective predetermined ranges.
摘要翻译：提供了使用简单模式来检测故障的无线基站的接收机，并且SW201切换接收机133的输入端口是否与天线114连接或被终止。 LNA（低噪声放大器）205以低失真放大输入信号。 SW 202和203在穿过LNA 205的第一路径和不穿过LNA 205的第二路径204之间切换。AGC AMP，其增益被控制使得其输出恒定，放大信号具有可控增益。基站控制部分使用SW 201终止接收机的输入端口，使得热噪声被输入到LNA 205.此外，SW 202和203被转换以基于以下事实来确定接收机的正常性：连接到第一路径时AGC-AMP 211的第一增益，当连接到第二路径时AGC-AMP 211的第二增益，以及第一和第二增益之间的差落在它们各自的预定范围内。

79. 发明申请

US20110292959A1 SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20110292959A1
公开(公告)日：2011-12-01
申请号：US13030627
申请日：2011-02-18
申请人： Toshitaka Shimamoto , Naoto Shimada , Kouji Makita , Yoshiaki Hasegawa
发明人： Toshitaka Shimamoto , Naoto Shimada , Kouji Makita , Yoshiaki Hasegawa
IPC分类号： H01S5/22 , H01L21/78
CPC分类号： H01S5/0202 , B82Y20/00 , H01S5/2201 , H01S5/34333
摘要： A semiconductor laser device includes a semiconductor laminated film including a ridge stripe portion. The semiconductor laminated film includes a first scribed level-different portion formed in a resonator surface which is an edge surface thereof intersecting the ridge stripe portion and a second scribed level-different portion formed in each side surface thereof extending in parallel to the ridge stripe portion, the first scribed level-difference portion is located between the second scribed level-different portion and the ridge stripe portion, a cross-sectional shape of the first scribe level-different portion taken along the resonator surface is polygonal, and one of angles of inclined parts which is located closer to an associated one of the ridge stripe portions is smaller than the other one of the angles located closer to an associated one of the second scribed portions, the inclined parts being sides of the polygonal shape.
摘要翻译：半导体激光装置包括具有棱条部的半导体层叠膜。半导体层叠膜包括形成在与脊条部分相交的边缘表面的谐振器表面中的第一划刻水平面不同部分和形成在其平行于脊条部分的每个侧表面中的第二划刻水平不同部分第一划刻水平差部分位于第二划刻水平不同部分和脊条部分之间，沿着谐振器表面截取的第一划线水平不同部分的横截面形状是多边形，并且位于更靠近相关联的一个棱条部分的倾斜部分小于位于更靠近相关联的一个第二划线部分的另一个角度，倾斜部分是多边形形状的侧面。

80. 发明授权

US08039283B2 Nitride compound semiconductor element and method for manufacturing same 有权
标题翻译：氮化物半导体元件及其制造方法
公开(公告)号：US08039283B2
公开(公告)日：2011-10-18
申请号：US12159232
申请日：2006-12-20
申请人： Yoshiaki Hasegawa , Toshiya Yokogawa , Atsushi Yamada , Yoshiaki Matsuda
发明人： Yoshiaki Hasegawa , Toshiya Yokogawa , Atsushi Yamada , Yoshiaki Matsuda
IPC分类号： H01L21/301 , H01S5/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/78 , H01L33/0095 , H01S5/0202 , H01S5/22 , H01S5/2201 , Y10S148/028
摘要： The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure 40 supported by an upper face of the substrate. First, a wafer 1 to be split into individual substrates is provided. A plurality of semiconductor layers composing the multilayer structure 40 are grown on the wafer 1. By cleaving the wafer 1 and the semiconductor layers, a cleavage plane in the multilayer structure 40 is formed. In the present invention, a plurality of voids are arranged at positions in the multilayer structure at which a cleavage plane is to be formed. Thus, cleavage can be performed with a good yield.
摘要翻译：本发明涉及一种氮化物化合物半导体元件的制造方法，所述氮化物化合物半导体元件包括由所述基板的上表面支撑的基板和多层结构体40。首先，设置分割成各个基板的晶片1。构成多层结构40的多个半导体层在晶片1上生长。通过切割晶片1和半导体层，形成多层结构40中的解理面。在本发明中，在形成有解理面的多层结构体的位置配置多个空隙。因此，可以以良好的产率进行裂解。

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