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71. 发明授权

US07024944B2 Ultrasonic flow meter 有权
标题翻译：超声波流量计
公开(公告)号：US07024944B2
公开(公告)日：2006-04-11
申请号：US10870317
申请日：2004-06-16
申请人： Hiroshi Imai , Akira Takada , Masahiro Hasunuma
发明人： Hiroshi Imai , Akira Takada , Masahiro Hasunuma
IPC分类号： G01F1/66
CPC分类号： G01F1/667 , G01F1/662
摘要： The present invention proposes an ultrasonic flow meter, comprising a conduit for measurement in which a liquid flows therein, and a pair of measurement sections which are provided in said conduit for measurement and are spaced apart by a certain interval along its longitudinal direction, and which obtains the flow velocity of said flowing liquid from the difference in the propagation time periods of ultrasonic in the two opposite directions between these measurement sections, and thereby measures the flow rate thereof; wherein a pair of fixing portions are provided which respectively support said conduit for measurement at the exterior side and also at the interior side in the longitudinal direction of said measurement sections.
摘要翻译：本发明提出了一种超声波流量计，其包括用于测量流体的流体管道，以及一对测量部分，其设置在所述测量管道中，并沿着其纵向间隔一定间隔，并且其中从这些测量部之间的两个相反方向上的超声波的传播时间段的差中获得所述流动液体的流速，从而测量其流量; 其中，设置有一对固定部分，它们分别支撑所述测量部分的外侧和内侧的用于测量的导管。

72. 发明授权

US06978683B2 Ultrasonic flow meter 有权
标题翻译：超声波流量计
公开(公告)号：US06978683B2
公开(公告)日：2005-12-27
申请号：US11070034
申请日：2005-03-02
申请人： Hiroshi Imai , Akira Takada , Masahiro Hasunuma
发明人： Hiroshi Imai , Akira Takada , Masahiro Hasunuma
IPC分类号： G01F1/66
CPC分类号： G01F1/667 , G01F1/662
摘要： The present invention proposes an ultrasonic flow meter, comprising a conduit for measurement in which a liquid flows therein, and a pair of measurement sections which are provided in said conduit for measurement and are spaced apart by a certain interval along its longitudinal direction, and which obtains the flow velocity of said flowing liquid from the difference in the propagation time periods of ultrasonic in the two opposite directions between these measurement sections, and thereby measures the flow rate thereof; wherein a pair of fixing portions are provided which respectively support said conduit for measurement at the exterior side and also at the interior side in the longitudinal direction of said measurement sections.
摘要翻译：本发明提出了一种超声波流量计，其包括用于测量流体的流体管道，以及一对测量部分，其设置在所述测量管道中，并沿着其纵向间隔一定间隔，并且其中从这些测量部之间的两个相反方向上的超声波的传播时间段的差中获得所述流动液体的流速，从而测量其流量; 其中，设置有一对固定部分，它们分别支撑所述测量部分的外侧和内侧的用于测量的导管。

73. 发明授权

US06950255B2 Method and apparatus for event management in a disk drive 失效
标题翻译：磁盘驱动器中事件管理的方法和装置
公开(公告)号：US06950255B2
公开(公告)日：2005-09-27
申请号：US10465858
申请日：2003-06-20
申请人： Hiroshi Imai
发明人： Hiroshi Imai
IPC分类号： G06F11/34 , G06F3/06 , G11B27/36 , G06F1/26 , G11B19/02
CPC分类号： G11B27/36
摘要： A disk drive is disclosed which has an event management function. At an event occurring time such as an error generation, the disk drive records the event information together with time data. A CPU of the disk drive is configured to, at a power ON time, allow the time data which is received from a host system to be stored in a memory. At the time of an error occurring, the CPU, while using the time measured by an internal timer and time data, generates time data which is synchronized with the internal time of the host system.
摘要翻译：公开了一种具有事件管理功能的磁盘驱动器。在诸如错误生成的事件发生时，磁盘驱动器将事件信息与时间数据一起记录。磁盘驱动器的CPU被配置为在电源接通时间允许从主机系统接收的时间数据被存储在存储器中。在发生错误时，CPU在使用内部定时器测量的时间和时间数据的同时，生成与主机系统的内部时间同步的时间数据。

74. 发明申请

US20050181527A1 Method for forming scribed groove and scribing apparatus 审中-公开
公开(公告)号：US20050181527A1
公开(公告)日：2005-08-18
申请号：US11082158
申请日：2005-03-16
申请人： Yuji Ohno , Hiroshi Imai , Yoshito Nakase
发明人： Yuji Ohno , Hiroshi Imai , Yoshito Nakase
IPC分类号： C03B33/023 , C03B33/037 , H01L21/301 , H01L21/304 , H01L21/78 , H01L21/00
CPC分类号： H01L21/3043 , H01L21/78
摘要： A method for forming scribed grooves on a wafer and an apparatus for implementing the method. The method moves the cutting part such that its cutting edge forms an inverted trapezoid-shaped path, thereby reducing the scribing angle of the cutting edge to an acute angle. Consequently, the stress produced by the mechanical shock at the time of the scribing can be dispersed in the moving direction of the cutting edge and in a direction perpendicular to the surface of the wafer. The horizontal movement of the scribing cutting edge in the wafer enables the application of a sufficient load in a direction perpendicular to the scribing plane in the wafer. Consequently, vertical cracks are sufficiently generated, and the amount of dimensional deviation between the scribed groove and the cleaved plane is reduced. This method can produce chips featuring outside dimensions with higher precision and cleaved surfaces with high-quality mirror finish.

75. 发明授权

US06922105B2 Operational amplifier 失效
标题翻译：运算放大器
公开(公告)号：US06922105B2
公开(公告)日：2005-07-26
申请号：US10632849
申请日：2003-08-04
申请人： Hiroshi Imai , Mitsuru Aoki , Hiroyuki Ban
发明人： Hiroshi Imai , Mitsuru Aoki , Hiroyuki Ban
IPC分类号： H03F1/52 , H03F3/30 , H03F3/45 , H03F3/26
CPC分类号： H03F3/3071 , H03F3/45183 , H03F2203/30036 , H03F2203/30051 , H03F2203/45324 , H03F2203/45352 , H03F2203/45632 , H03F2203/45708
摘要： In an operational amplifier, a differential amplifying circuit is configured to amplify an input voltage inputted from the input terminal. An outputting transistor is connected to the output terminal. A driving transistor is connected to the differential amplifying circuit and the outputting transistor. The driving transistor turns on according to a control signal supplied from the differential amplifying circuit to the driving circuit. The driving transistor is also configured to drive the outputting transistor according to the control signal. A control signal reducing circuit, when a voltage is applied on the driving transistor through the outputting transistor, is configured to reduce the control signal within a range that the driving transistor is kept to on state. The voltage applied on the driving transistor exceeds a predetermined threshold voltage.
摘要翻译：在运算放大器中，差分放大电路被配置为放大从输入端输入的输入电压。输出晶体管连接到输出端子。驱动晶体管连接到差分放大电路和输出晶体管。驱动晶体管根据从差分放大电路向驱动电路提供的控制信号导通。驱动晶体管也被配置为根据控制信号来驱动输出晶体管。当通过输出晶体管对驱动晶体管施加电压时，控制信号降低电路被配置为在驱动晶体管保持导通状态的范围内减少控制信号。施加在驱动晶体管上的电压超过预定阈值电压。

76. 发明授权

US06745528B2 Stainless-steel floor and method of constructing the stainless-steel floor 失效
标题翻译：不锈钢地板及不锈钢地板施工方法
公开(公告)号：US06745528B2
公开(公告)日：2004-06-08
申请号：US10163513
申请日：2002-06-07
申请人： Mitsuru Morita , Yuichi Izaki , Akio Tomita , Hiroshi Imai , Kansuke Honma , Hideyuki Meguro , Katsumi Kawamoto , Norihiro Nagao , Nobutaka Sugano , Kyoya Tanaka , Osamu Takesita , Naoaki Hamada
发明人： Mitsuru Morita , Yuichi Izaki , Akio Tomita , Hiroshi Imai , Kansuke Honma , Hideyuki Meguro , Katsumi Kawamoto , Norihiro Nagao , Nobutaka Sugano , Kyoya Tanaka , Osamu Takesita , Naoaki Hamada
IPC分类号： E04B100
CPC分类号： E04F21/20 , B32B7/04 , B32B15/18 , E04B5/48 , E04F15/0215 , E04F15/02488 , E04F15/06
摘要： A method of constructing a stainless-steel floor on a floor bed includes providing support members on the floor bed, placing a stainless-steel plate on the support members; and bonding the stainless-steel plate to the floor bed by using mortar to fill the space between the stainless-steel plate and the floor bed, or by using adhesive.
摘要翻译：在地板床上构造不锈钢地板的方法包括在地板床上设置支撑构件，将不锈钢板放置在支撑构件上; 并通过使用砂浆填充不锈钢板和地板床之间的空间，或通过使用粘合剂将不锈钢板粘合到地板床上。

77. 发明授权

US06724227B2 Load-driving semiconductor device 有权
标题翻译：负载驱动半导体器件
公开(公告)号：US06724227B2
公开(公告)日：2004-04-20
申请号：US10383084
申请日：2003-03-06
申请人： Hiroshi Imai
发明人： Hiroshi Imai
IPC分类号： H03B100
CPC分类号： H03K17/0822 , H03K17/04123 , H03K17/063 , H03K17/223
摘要： In a composite IC in which integrated are a power transistor, a bipolar analog circuit and a MOS logic circuit, a load-driving semiconductor device is provided which is capable of certainly placing the power transistor into an off-condition at power-on for stopping the driving of a load. In the semiconductor device, a high-side switch MOS transistor, a charge pump, a bipolar analog circuit, a charge pump driving CMOS logic circuit, a level conversion CMOS logic circuit and a forcibly stopping bipolar transistor 90 are made in the form of an IC, and the forcibly stopping bipolar transistor receives, through its base terminal, a signal which inverts when a drive voltage exceeds a predetermined value to turn to an on-condition. This operation places the bipolar analog circuit into a driving-stopped condition.
摘要翻译：在其中集成有功率晶体管，双极性模拟电路和MOS逻辑电路的复合IC中，提供了一种负载驱动半导体器件，其能够在上电时肯定地将功率晶体管置于关闭状态以停止驱动负载。在半导体器件中，高边开关MOS晶体管，电荷泵，双极模拟电路，电荷泵驱动CMOS逻辑电路，电平转换CMOS逻辑电路和强制停止双极晶体管90制成 IC，并且强制停止双极晶体管通过其基极端子接收当驱动电压超过预定值时转换为接通状态的信号。该操作将双极模拟电路置于驱动停止状态。

78. 发明授权

US06589984B1 Benzofurylpyrone derivatives 失效
标题翻译：苯并呋喃基酮衍生物
公开(公告)号：US06589984B1
公开(公告)日：2003-07-08
申请号：US09646005
申请日：2000-09-11
申请人： Yoshimitsu Naniwa , Hiroshi Imai , Tomohide Ida , Emiko Muratani , Kazuo Kitai , Yoshinori Sugimoto , Tomomi Kosugi , Akiko Takeuchi , Kunihito Watanabe , Takami Tomiyama , Tomio Takeuchi , Masa Hamada
发明人： Yoshimitsu Naniwa , Hiroshi Imai , Tomohide Ida , Emiko Muratani , Kazuo Kitai , Yoshinori Sugimoto , Tomomi Kosugi , Akiko Takeuchi , Kunihito Watanabe , Takami Tomiyama , Tomio Takeuchi , Masa Hamada
IPC分类号： C07D30932
CPC分类号： C07D405/14 , C07D407/04 , C07D407/14 , C07D409/14 , C07D413/14 , C07D417/04
摘要： There is provided benzofuryl-&agr;-pyrone derivative represented by the following structural formula (I): wherein R1 represents a hydrogen atom or an alkyl group of 1 to 5 carbons; R2 represents hydrogen, —CO—R5 or —SO2R6; R3 represents hydrogen, an alkyl group of 1 to 5 carbons, etc.; and R4 is a substituent attached to the 4-carbon, 5-carbon, 6-carbon or 7 carbon of the benzofuran ring; and their salts. The compounds are useful as therapeutic agent for hypertriglyceridemia, lipid metabolism enhancers, or prophylactic and/or therapeutic agents for arteriosclerosis.
摘要翻译：提供由以下结构式（I）表示的苯并呋喃基-α-吡喃酮衍生物：其中R1表示氢原子或1〜5个碳原子的烷基; R2表示氢，-CO-R5或-SO2R6; R3表示氢， 1〜5个碳原子的烷基等; 并且R 4是连接到苯并呋喃环的4-碳，5-碳，6-碳或7碳的取代基; 和它们的盐。该化合物可用作高甘油三酯血症的治疗剂，脂质代谢增强剂，或用于动脉硬化的预防和/或治疗剂。

79. 外观设计

USD463455S1 Power shovel 失效
公开(公告)号：USD463455S1
公开(公告)日：2002-09-24
申请号：US29149964
申请日：2001-10-25
申请人： Yasuhiro Yanagida , Hiroshi Imai
设计人： Yasuhiro Yanagida , Hiroshi Imai

80. 发明授权

US06242787B1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06242787B1
公开(公告)日：2001-06-05
申请号：US08748896
申请日：1996-11-15
申请人： Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
发明人： Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
IPC分类号： H01L2976
CPC分类号： H01L29/7816 , H01L21/8249 , H01L27/0251 , H01L27/0623 , H01L27/085 , H01L29/063 , H01L29/1083 , H01L29/1095 , H01L29/66674 , H01L29/7395 , H01L29/7801 , H01L29/7824 , H01L29/7835
摘要： A semiconductor device including a reduced surface field strength type LDMOS transistor which can prevent the breakdown of elements at channel formation portions when a reverse voltage is applied to its drain. A P well and an N well are formed in an N-type substrate to produce a double-well structure, with a source electrode being set to be equal in electric potential to the N-type substrate. The drift region of the N well has a dopant concentration to satisfy the so-called RESURF condition, which can provide a high breakdown voltage a low ON resistance. When a reverse voltage is applied to a drain electrode, a parasitic bipolar transistor comprising the N well, the P well and the N-type substrate develops to form a current-carrying path toward a substrate, so that the element breakdown at the channel formation portions is avoidable at the application of the reverse voltage.
摘要翻译：一种包括减小表面场强度型LDMOS晶体管的半导体器件，其可以防止当向其漏极施加反向电压时在沟道形成部分处的元件的击穿。在N型衬底中形成P阱和N阱以产生双阱结构，其中源极被设置为与N型衬底的电位相等。 N阱的漂移区域具有掺杂浓度以满足所谓的RESURF条件，其可以提供高的击穿电压低导通电阻。当向漏极施加反向电压时，包括N阱，P阱和N型衬底的寄生双极晶体管形成朝向衬底的通电路径，使得元件在沟道形成时击穿在施加反向电压时部分是可避免的。

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