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71. 发明授权

US08080478B2 Method of producing mask 有权
标题翻译：生产面膜的方法
公开(公告)号：US08080478B2
公开(公告)日：2011-12-20
申请号：US12873652
申请日：2010-09-01
申请人： Yuichi Ohsawa , Junichi Ito , Saori Kashiwada , Chikayoshi Kamata
发明人： Yuichi Ohsawa , Junichi Ito , Saori Kashiwada , Chikayoshi Kamata
IPC分类号： H01L21/00
CPC分类号： H01L21/0337 , H01L43/12
摘要： According to one embodiment, a method of producing a mask includes: a step of forming a pattern on a substrate; a step of forming a first film that covers the top surface and side surface of the pattern and contains a first material; a step of forming a second film containing a second material on the first film; a step of performing anisotropic etching of the first and second films in a way that forms a sidewall layer including the first and second films on the side surface of the pattern and removes the first and second films on any location other than the sidewall layer; a step of performing isotropic etching of the first film of the sidewall layer; and a step of removing the pattern.
摘要翻译：根据一个实施例，制造掩模的方法包括：在基板上形成图案的步骤; 形成覆盖图案的顶表面和侧表面并包含第一材料的第一膜的步骤; 在所述第一膜上形成含有第二材料的第二膜的步骤; 以在图案的侧表面上形成包括第一和第二膜的侧壁层的方式进行第一和第二膜的各向异性蚀刻的步骤，并且除了侧壁层之外的任何位置去除第一和第二膜; 对侧壁层的第一膜进行各向同性蚀刻的步骤; 以及去除图案的步骤。

72. 发明授权

US08049998B2 Magnetoresistance effect device and method for manufacturing same, magnetic memory, magnetic head, and magnetic recording apparatus 有权
标题翻译：磁阻效应器件及其制造方法，磁存储器，磁头和磁记录装置
公开(公告)号：US08049998B2
公开(公告)日：2011-11-01
申请号：US12073171
申请日：2008-02-29
申请人： Yuichi Ohsawa , Shiho Nakamura
发明人： Yuichi Ohsawa , Shiho Nakamura
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11C11/16 , H01L27/224 , H01L27/226 , H01L43/08 , Y10T428/1121 , Y10T428/12271
摘要： A magnetoresistance effect device includes: an insulator layer; a first and second ferromagnetic layer laminated to sandwich the insulator layer; a magnetic bias layer laminated with the second ferromagnetic layer; and a connecting section formed discontinuously on a side face of the insulator layer. The connecting section is not interposed between the second ferromagnetic layer and the magnetic bias layer. The connecting section is made of a ferromagnetic material, and electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer. A method for manufacturing a magnetoresistance effect device includes: laminating a first and second ferromagnetic layer to sandwich an insulator layer, and laminating a magnetic bias layer with the second ferromagnetic layer; and forming a connecting section for electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer by discontinuously forming a ferromagnetic material on a side face of the insulator layer.
摘要翻译：磁阻效应器件包括：绝缘体层; 层叠以夹持绝缘体层的第一和第二铁磁层; 层叠有所述第二铁磁层的磁偏置层; 以及在绝缘体层的侧面上不连续地形成的连接部。连接部不夹在第二铁磁层和磁偏置层之间。连接部分由铁磁材料制成，并且在第一铁磁层和第二铁磁层之间电连接。一种制造磁阻效应器件的方法包括：层叠第一和第二铁磁层以夹住绝缘体层，并将磁偏置层与第二铁磁层层叠; 以及形成用于通过在绝缘体层的侧面上不连续地形成铁磁材料来在第一铁磁层和第二铁磁层之间电连接的连接部分。

73. 发明申请

US20090207724A1 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US20090207724A1
公开(公告)日：2009-08-20
申请号：US12320955
申请日：2009-02-10
申请人： Satoshi Yanagi , Yuichi Ohsawa , Shiho Nakamura , Daisuke Saida , Hirofumi Morise
发明人： Satoshi Yanagi , Yuichi Ohsawa , Shiho Nakamura , Daisuke Saida , Hirofumi Morise
IPC分类号： G11B3/70
CPC分类号： G11B25/04 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： A magnetic memory is provided with a memory cell. The memory cell includes a magnetic recording element, an interconnection to generate a radio-frequency current-induced magnetic field and a ground line. The magnetic recording element is provided with a first magnetic layer whose magnetization direction is substantially fixed, a magnetic recording layer whose magnetization direction is substantially reversed by spin-polarized electrons passing through the magnetic recording layer and a first nonmagnetic layer provided between the first magnetic layer and the magnetic recording layer. The interconnection is provided above the magnetic recording element to generate a radio-frequency current-induced magnetic field acting in a direction substantially perpendicular to a magnetization easy axis of the magnetic recording layer. The ground line is provided on a side opposite to the magnetic recording element with respect to the interconnection.
摘要翻译：磁存储器设置有存储单元。存储单元包括磁记录元件，用于产生射频电流感应磁场和接地线的互连。磁记录元件设置有其磁化方向基本上固定的第一磁性层，其磁化方向基本上由通过磁记录层的自旋极化电子反转的磁记录层和设置在第一磁性层之间的第一非磁性层和磁记录层。互连设置在磁记录元件的上方，以产生沿与磁记录层的易磁化轴基本垂直的方向作用的射频电流感应磁场。接地线相对于互连设置在与磁记录元件相对的一侧上。

74. 发明申请

US20090098412A1 Magnetic recording element, manufacturing method of the same and magnetic storage system using the same 有权
标题翻译：磁记录元件，其制造方法和使用其的磁存储系统
公开(公告)号：US20090098412A1
公开(公告)日：2009-04-16
申请号：US12285429
申请日：2008-10-03
申请人： Yuichi Ohsawa , Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida
发明人： Yuichi Ohsawa , Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida
IPC分类号： G11B5/33
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , Y10T428/11 , Y10T428/1121 , Y10T428/1143 , Y10T428/115
摘要： A magnetic recording element includes a multilayer having a surface and a pair of electrodes. The multilayer has a first magnetic fixed layer whose magnetization is substantially fixed in a first direction substantially perpendicular to the surface. The multilayer also has a second magnetic fixed layer whose magnetization is substantially fixed in a second direction opposite to the first direction substantially perpendicular to the surface. A third magnetic layer is provided between the first and second magnetic layers. The direction of magnetization of the third ferromagnetic layer is variable. A first intermediate layer is provided between the first and the third magnetic layers. A second intermediate layer is provided between the second and the third magnetic layers. The pair of electrodes is capable of supplying an electric current flowing in a direction substantially perpendicular to the surface to the multilayer. The sectional area taken parallel to the surface at a thickness midpoint of the first magnetic layer is larger than that of the second magnetic layer.
摘要翻译：磁记录元件包括具有表面和一对电极的多层。多层具有第一磁性固定层，其磁化基本上在基本垂直于表面的第一方向固定。多层还具有第二磁性固定层，其磁化基本上固定在与基本上垂直于表面的第一方向相反的第二方向上。第三磁性层设置在第一和第二磁性层之间。第三铁磁层的磁化方向是可变的。第一中间层设置在第一和第三磁性层之间。第二中间层设置在第二和第三磁性层之间。该对电极能够将与表面大致垂直的方向流动的电流供给到多层。在第一磁性层的厚度中点平行于表面截取的截面积大于第二磁性层的截面面积。

75. 发明申请

US20080213627A1 Magnetoresistance effect device and method for manufacturing same, magnetic memory, magnetic head, and magnetic recording apparatus 有权
标题翻译：磁阻效应器件及其制造方法，磁存储器，磁头和磁记录装置
公开(公告)号：US20080213627A1
公开(公告)日：2008-09-04
申请号：US12073171
申请日：2008-02-29
申请人： Yuichi Ohsawa , Shiho Nakamura
发明人： Yuichi Ohsawa , Shiho Nakamura
IPC分类号： G11B5/39 , B32B7/04 , B32B15/04
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11C11/16 , H01L27/224 , H01L27/226 , H01L43/08 , Y10T428/1121 , Y10T428/12271
摘要： A magnetoresistance effect device includes: an insulator layer; a first and second ferromagnetic layer laminated to sandwich the insulator layer; a magnetic bias layer laminated with the second ferromagnetic layer; and a connecting section formed discontinuously on a side face of the insulator layer. The connecting section is not interposed between the second ferromagnetic layer and the magnetic bias layer. The connecting section is made of a ferromagnetic material, and electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer. A method for manufacturing a magnetoresistance effect device includes: laminating a first and second ferromagnetic layer to sandwich an insulator layer, and laminating a magnetic bias layer with the second ferromagnetic layer; and forming a connecting section for electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer by discontinuously forming a ferromagnetic material on a side face of the insulator layer.
摘要翻译：磁阻效应器件包括：绝缘体层; 层叠以夹持绝缘体层的第一和第二铁磁层; 层叠有所述第二铁磁层的磁偏置层; 以及在绝缘体层的侧面上不连续地形成的连接部。连接部不夹在第二铁磁层和磁偏置层之间。连接部分由铁磁材料制成，并且在第一铁磁层和第二铁磁层之间电连接。一种制造磁阻效应器件的方法包括：层叠第一和第二铁磁层以夹住绝缘体层，并将磁偏置层与第二铁磁层层叠; 以及形成用于通过在绝缘体层的侧面上不连续地形成铁磁材料来在第一铁磁层和第二铁磁层之间电连接的连接部分。

76. 发明授权

US07240419B2 Method of manufacturing a magnetoresistance effect element 有权
标题翻译：制造磁阻效应元件的方法
公开(公告)号：US07240419B2
公开(公告)日：2007-07-10
申请号：US10796086
申请日：2004-03-10
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： G11B5/133
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle can be interrupted when the current reaches a predetermined value.
摘要翻译：一种制造磁阻效应元件的方法包括：在第一铁磁层上形成绝缘层，通过从绝缘层的顶表面推出针而形成到达第一铁磁层的孔，以及沉积铁磁材料以形成第二铁磁体覆盖掩埋孔的绝缘层的层。孔径可以具有不大于20nm的开口宽度。可以监测在第一铁磁层和针之间流动的电流，并且当电流达到预定值时可以中断针的推压。

77. 发明申请

US20060187705A1 MAGNETIC CELL AND MAGNETIC MEMORY 有权
标题翻译：磁性细胞和磁性记忆
公开(公告)号：US20060187705A1
公开(公告)日：2006-08-24
申请号：US11405418
申请日：2006-04-18
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell includes a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
摘要翻译：磁性单元包括第一铁磁层，其磁化基本上固定在第一方向上; 第二铁磁层，其磁化基本上固定在与第一方向相反的第二方向上; 设置在所述第一和第二铁磁层之间的第三铁磁层，所述第三铁磁层的磁化方向是可变的; 设置在第一和第三铁磁层之间的第一中间层; 以及设置在第二和第三铁磁层之间的第二中间层。可以通过在第一和第二铁磁层之间通过电流，在自旋极化电子对第三铁磁层的影响下确定第三铁磁层的磁化方向。

78. 发明申请

US20060007730A1 Magnetic cell and magnetic memory 有权
公开(公告)号：US20060007730A1
公开(公告)日：2006-01-12
申请号：US11227493
申请日：2005-09-16
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell comprises: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.

79. 发明授权

US06956766B2 Magnetic cell and magnetic memory 有权
标题翻译：磁性细胞和磁记忆
公开(公告)号：US06956766B2
公开(公告)日：2005-10-18
申请号：US10721549
申请日：2003-11-26
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell comprises: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
摘要翻译：磁性电池包括：第一铁磁层，其磁化基本上固定在第一方向上; 第二铁磁层，其磁化基本上固定在与第一方向相反的第二方向上; 设置在所述第一和第二铁磁层之间的第三铁磁层，所述第三铁磁层的磁化方向是可变的; 设置在第一和第三铁磁层之间的第一中间层; 以及设置在第二和第三铁磁层之间的第二中间层。可以通过在第一和第二铁磁层之间通过电流，在自旋极化电子对第三铁磁层的影响下确定第三铁磁层的磁化方向。

80. 发明授权

US06937447B2 Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory 失效
标题翻译：磁阻效应元件，其制造方法，磁再现元件和磁存储器
公开(公告)号：US06937447B2
公开(公告)日：2005-08-30
申请号：US10244550
申请日：2002-09-17
申请人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
发明人： Shiho Okuno , Yuichi Ohsawa , Shigeru Haneda , Yuzo Kamiguchi , Tatsuya Kishi
IPC分类号： B32B7/02 , G11B5/39 , G11B5/127
CPC分类号： H01L43/08 , B32B7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01L43/12 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1143 , Y10T428/12465 , Y10T428/12931 , Y10T428/12986 , Y10T428/325
摘要： A magnetoresistance effect element includes a first ferromagnetic layer, insulating layer overlying the first ferromagnetic layer, and second ferromagnetic layer overlying the insulating layer. The insulating layer has formed a through hole having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.
摘要翻译：磁阻效应元件包括第一铁磁层，覆盖第一铁磁层的绝缘层和覆盖绝缘层的第二铁磁层。绝缘层形成了具有不大于20nm的开口宽度的通孔，并且第一和第二铁磁层经由通孔相互连接。

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