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71. 发明授权

US06553787B1 Method for manufacturing quartz glass crucible 有权
标题翻译：石英玻璃坩埚的制造方法
公开(公告)号：US06553787B1
公开(公告)日：2003-04-29
申请号：US09701427
申请日：2001-02-05
申请人： Kazuhiro Akiho , Masaki Kusuhara , Hiroyuki Watanabe , Tomoyasu Uno
发明人： Kazuhiro Akiho , Masaki Kusuhara , Hiroyuki Watanabe , Tomoyasu Uno
IPC分类号： C03B1901
CPC分类号： C03B19/095 , C30B15/10 , C30B35/002 , Y02P40/57 , Y10S65/04
摘要： Present invention suppresses undesirable effects of the bubbles trapped in a silica glass crucible on single crystallization during the pulling process under a high-temperature load. When raw material powder is melted in a mold 1, graphite components of electrodes and impurities contained in the raw material are removed by introducing hydrogen gas and/or oxygen gas immediately after the start of arc discharge. Graphite and impurities are prevented from entering the product crucible, thereby suppressing the volume increase rate of the bubbles and reducing the inner pressure of the bubbles. Gases remaining in voids of an accumulated layer of silica powder formed inside the mold 1 can be replaced with helium gas, by supplying helium gas to the accumulated layer from the mold 1.
摘要翻译：本发明在高温负载下，在牵引过程中抑制了在二氧化硅玻璃坩埚中捕获的气泡对单结晶的不良影响。当原料粉末在模具1中熔化时，通过在电弧放电开始之后立即引入氢气和/或氧气来除去原料中包含的电极和杂质的石墨成分。防止石墨和杂质进入产品坩埚，从而抑制气泡的体积增加率并降低气泡的内部压力。残留在模具1内部形成的二氧化硅粉末的空隙中的气体可以用氦气代替，通过从模具1向积聚层供给氦气。

72. 发明授权

US06380064B1 Semiconductor devices and process for producing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06380064B1
公开(公告)日：2002-04-30
申请号：US09223404
申请日：1998-12-30
申请人： Hideki Mizuhara , Shinichi Tanimoto , Hiroyuki Watanabe , Yasunori Inoue
发明人： Hideki Mizuhara , Shinichi Tanimoto , Hiroyuki Watanabe , Yasunori Inoue
IPC分类号： H01L214763
CPC分类号： H01L23/53223 , H01L21/76838 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a semiconductor substrate and a wiring layer, which is doped with an impurity, located on the substrate. The semiconductor device has upper and lower wiring layers apart from each other. An electric insulating film electrically insulates between the upper and lower wiring layers. The insulating film has a contact hole. A wiring material is packed with the contact hole to electrically connect the upper and lower wiring layers. The impurity is contained in the lower wiring layer to decrease its resistivity.
摘要翻译：具有半导体衬底和掺杂有杂质的布线层的半导体器件位于衬底上。半导体器件具有彼此分开的上和下布线层。电绝缘膜在上下布线层之间电绝缘。绝缘膜具有接触孔。布线材料装有接触孔以电连接上下布线层。杂质包含在下布线层中以降低其电阻率。

73. 发明授权

US06326318B1 Process for producing semiconductor devices including an insulating layer with an impurity 有权
标题翻译：用于制造包括具有杂质的绝缘层的半导体器件的工艺
公开(公告)号：US06326318B1
公开(公告)日：2001-12-04
申请号：US09521865
申请日：2000-03-08
申请人： Hiroyuki Watanabe , Hideki Mizuhara , Kaori Misawa , Masaki Hirase , Hiroyuki Aoe
发明人： Hiroyuki Watanabe , Hideki Mizuhara , Kaori Misawa , Masaki Hirase , Hiroyuki Aoe
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , H01L21/02129 , H01L21/02131 , H01L21/02282 , H01L21/02321 , H01L21/02351 , H01L21/3115 , H01L21/31155 , H01L21/3121 , H01L21/316 , H01L21/31612 , H01L21/31625 , H01L21/31633 , H01L21/76801 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76877
摘要： A semiconductor device and a process for producing the same. The device has two conducting layers that are spaced from each other and an organic insulating film for electrically insulating these two conducting layers from each other. The organic insulating film contains contact holes with plugs being embedded therein so as to electrically connect these two conducting layers by the plugs. The process contains a step of forming the organic insulating film on the lower conducting layer. An impurity having a kinetic energy is introduced into the organic insulating film. Next, contact holes are formed in the organic insulating film, and then plugs are formed in the contact holes. An upper conducting layer is formed on the organic insulating film so as to be electrically connected to the plugs.
摘要翻译：半导体器件及其制造方法。该器件具有彼此间隔开的两个导电层和用于将这两个导电层彼此电绝缘的有机绝缘膜。有机绝缘膜包含嵌入其中的插塞的接触孔，以便通过插头将这两个导电层电连接。该方法包括在下导电层上形成有机绝缘膜的步骤。具有动能的杂质被引入到有机绝缘膜中。接下来，在有机绝缘膜中形成接触孔，然后在接触孔中形成插塞。在有机绝缘膜上形成上导电层，以电连接到插头。

74. 发明授权

US06288438B1 Semiconductor device including insulation film and fabrication method thereof 失效
标题翻译：包括绝缘膜的半导体器件及其制造方法
公开(公告)号：US06288438B1
公开(公告)日：2001-09-11
申请号：US08923901
申请日：1997-09-04
申请人： Hideki Mizuhara , Hiroyuki Watanabe , Noriaki Kojima
发明人： Hideki Mizuhara , Hiroyuki Watanabe , Noriaki Kojima
IPC分类号： H01L2358
CPC分类号： H01L21/76859 , H01L21/76801 , H01L21/76802 , H01L21/76825 , H01L21/76829 , H01L21/7685 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device that allows improvement in adhesion between insulation films having a 2-layered structure together with improvement of planarization and film characteristics, and a fabrication method thereof are obtained. In the fabrication method of the semiconductor device, an insulation film of a 2-layered structure having at least an upper layer and a lower layer is formed on a semiconductor substrate. Then, impurities are introduced into the upper insulation film under a condition where impurities arrive at least at the interface between the upper insulation film and the lower insulation film. By improving the adhesion between the upper and lower insulation films, the upper insulation film does not easily peel off.
摘要翻译：获得能够提高具有2层结构的绝缘膜与提高平坦化和膜特性之间的粘附性的半导体器件及其制造方法。在半导体器件的制造方法中，在半导体衬底上形成至少具有上层和下层的2层结构的绝缘膜。然后，杂质至少在上绝缘膜和下绝缘膜之间的界面处到达上述绝缘膜的情况下被引入。通过改善上下绝缘膜之间的粘附性，上绝缘膜不容易剥离。

75. 发明授权

US06268657B1 Semiconductor devices and an insulating layer with an impurity 失效
标题翻译：半导体器件和具有杂质的绝缘层
公开(公告)号：US06268657B1
公开(公告)日：2001-07-31
申请号：US08877931
申请日：1997-06-18
申请人： Hiroyuki Watanabe , Hideki Mizuhara , Kaori Misawa , Masaki Hirase , Hiroyuki Aoe
发明人： Hiroyuki Watanabe , Hideki Mizuhara , Kaori Misawa , Masaki Hirase , Hiroyuki Aoe
IPC分类号： H01L21321
CPC分类号： H01L21/02164 , H01L21/02126 , H01L21/02129 , H01L21/02131 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02282 , H01L21/02321 , H01L21/02351 , H01L21/3115 , H01L21/31155 , H01L21/3121 , H01L21/316 , H01L21/31612 , H01L21/31625 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L21/76877
摘要： A semiconductor device and a process for producing the same. The device has two conducting layers that are spaced from each other and an insulating film for electrically insulating these two conducting layers from each other. The insulating film contains contact holes with plugs being embedded therein so as to electrically connect these two conducting layers by the plugs. The process contains a step of forming the insulating film on the lower conducting layer. An impurity having a kinetic energy is introduced into the insulating film. Next, contact holes are formed in the insulating film, and then plugs are formed in the contact holes. An upper conducting layer is formed on the insulating film so as to be electrically connected to the plugs.
摘要翻译：半导体器件及其制造方法。该器件具有彼此间隔开的两个导电层和用于将这两个导电层彼此电绝缘的绝缘膜。绝缘膜包含嵌入其中的插塞的接触孔，以便通过插头将这两个导电层电连接。该方法包括在下导电层上形成绝缘膜的步骤。具有动能的杂质被引入到绝缘膜中。接下来，在绝缘膜中形成接触孔，然后在接触孔中形成插塞。在绝缘膜上形成上导电层以与插头电连接。

76. 外观设计

USD444778S1 Combined amplifier and tuner 失效
公开(公告)号：USD444778S1
公开(公告)日：2001-07-10
申请号：US29130390
申请日：2000-09-29
申请人： Masafumi Ito , Hiroyuki Watanabe , Minoru Sube
设计人： Masafumi Ito , Hiroyuki Watanabe , Minoru Sube

77. 外观设计

USD431238S Combined digital audio disc player, amplifier and tuner 失效
公开(公告)号：USD431238S
公开(公告)日：2000-09-26
申请号：US94679
申请日：1998-10-07
申请人： Masafumi Ito , Hiroyuki Watanabe , Yukio Iikura
设计人： Masafumi Ito , Hiroyuki Watanabe , Yukio Iikura

78. 外观设计

USD425892S Combined digital audio disc player, radio tuner, amplifier and tape recorder 失效
公开(公告)号：USD425892S
公开(公告)日：2000-05-30
申请号：US95751
申请日：1998-10-29
申请人： Masafumi Ito , Hiroyuki Watanabe
设计人： Masafumi Ito , Hiroyuki Watanabe

79. 发明授权

US5885071A Quartz glass crucible for pulling single crystal 失效
标题翻译：石英玻璃坩埚拉单晶
公开(公告)号：US5885071A
公开(公告)日：1999-03-23
申请号：US812843
申请日：1997-03-06
申请人： Hiroyuki Watanabe , Tatsuhiro Sato
发明人： Hiroyuki Watanabe , Tatsuhiro Sato
IPC分类号： C03B20/00 , C03B19/09 , C03C17/34 , C30B15/10 , C30B29/06 , C30B35/00 , F27B14/10 , B29D22/00
CPC分类号： C03C17/3411 , C03B19/095 , C30B15/10 , C30B35/002 , Y10T428/13
摘要： In order to reduce concentrations of impurities in an inner layer of a quartz crucible for pulling a silicon single crystal which comprises an outer layer made of quartz glass and an inner layer formed on the inner surface of the outer layer, a migration-preventing layer is formed between the outer and inner layers, wherein the migration-preventing layer prevents migration of the impurities such as alkaline metals included in the natural quartz glass in the outer layer to the synthetic quartz glass in the inner layer. The method of producing a crucible using a mold with an upper opening comprises the steps of: feeding a first quartz powder into the mold along an inner surface of the mold to pile up the first quartz powder in a layered structure and form a preform of the first quartz powder; melting a part of the preform by heat radiated from inside the preform; cooling the preform to solidify and form a crucible substrate of an opaque quartz glass layer; generating a high temperature gas atmosphere inside the substrate during or after formation of the substrate; feeding a second quartz powder containing aluminum or in combination with an aluminum-containing component into the gas atmosphere and melting it in the gas atmosphere; settling the second quartz powder melt flying from the gas atmosphere on an inner surface of the substrate to form an aluminum-containing intermediate quartz glass layer; feeding a third quartz powder into the gas atmosphere and melting it in the gas atmosphere; and it as settling the third quartz powder melt flying from the gas atmosphere on the inner surface of the aluminum-containing quartz glass layer to form a transparent quartz glass layer with high purity.
摘要翻译：为了降低石英坩埚的内层中的杂质浓度，用于拉制包含由石英玻璃制成的外层和形成在外层的内表面上的内层的硅单晶，防迁移层为形成在外层和内层之间，其中防迁移层防止包含在外层中的天然石英玻璃中的杂质如内层中的合成石英玻璃的迁移。使用具有上部开口的模具制造坩埚的方法包括以下步骤：沿着模具的内表面将第一石英粉末进料到模具中，以堆叠结构堆积第一石英粉末，并形成预成型体第一石英粉; 通过从预制件内部辐射的热量来熔化预成型件的一部分; 冷却预成型件以固化并形成不透明石英玻璃层的坩埚基底; 在基板形成期间或之后在基板内产生高温气体气氛; 将含有铝的第二石英粉末或与含铝组分组合进入气体气氛中并在气体气氛中熔融; 将从气体气氛中飞散的第二石英粉末熔融在基板的内表面上，形成含铝的中间石英玻璃层; 将第三石英粉放入气体气氛中并在气体气氛中熔化; 并将其沉淀在含铝石英玻璃层的内表面上从气体气氛中飞散的第三石英粉末熔融物，以形成高纯度的透明石英玻璃层。

80. 发明授权

US5877027A Method for the analysis of impurity contents in silicon dioxide 失效
标题翻译：二氧化硅杂质含量分析方法
公开(公告)号：US5877027A
公开(公告)日：1999-03-02
申请号：US918133
申请日：1997-08-27
申请人： Katsuhiko Kemmochi , Kiyotaka Maekawa , Chuzaemon Tsuji , Manabu Saitou , Hiroyuki Miyazawa , Hiroyuki Watanabe
发明人： Katsuhiko Kemmochi , Kiyotaka Maekawa , Chuzaemon Tsuji , Manabu Saitou , Hiroyuki Miyazawa , Hiroyuki Watanabe
IPC分类号： G01N21/73 , G01N1/00 , G01N1/28 , G01N1/40 , G01N27/26 , G01N33/00 , G01N33/20
CPC分类号： G01N33/20 , G01N1/4044 , G01N2033/0095 , Y10T436/20 , Y10T436/25125
摘要： An analytical method for the quantitative determination of the impurities in silicon dioxide by which trace amounts of hardly soluble impurities contained in silicon dioxide can be reliably decomposed and converted into a solution so that the contents of all of the impurities contained in silicon dioxide or, in particular, zirconium in a natural quartz powder can be accurately determined. Silicon dioxide is decomposed with hydrofluoric acid or an acid mixture of hydrofluoric acid and another inorganic acid to give a decomposition solution which is, as such or after admixture with another inorganic acid, subjected to evaporation to dryness and the residue is heated to cause fusion with addition of a salt or hydroxide of an alkali metal followed by dissolution of the salt or hydroxide of an alkali metal with pure water or with an aqueous solution of an inorganic acid to give an aqueous solution which is subjected to quantitative analysis of the impurities therein.
摘要翻译：用于定量测定二氧化硅中的杂质的分析方法，其中二氧化硅中含有微量难溶的杂质可以被可靠地分解并转化成溶液，使得二氧化硅中所含的所有杂质的含量，特别地，可以精确地测定天然石英粉中的锆。二氧化硅用氢氟酸或氢氟酸与其他无机酸的酸性混合物分解，得到分解溶液，该分解溶液与其它无机酸混合后进行蒸发干燥，并将残余物加热至与加入碱金属的盐或氢氧化物，然后用纯水或无机酸的水溶液溶解碱金属的盐或氢氧化物，得到对其中的杂质进行定量分析的水溶液。

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