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71. 发明授权

US06835675B2 Laser-irradiation method and laser-irradiation device 失效
标题翻译：激光照射方法和激光照射装置
公开(公告)号：US06835675B2
公开(公告)日：2004-12-28
申请号：US10316605
申请日：2002-12-10
申请人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
发明人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
IPC分类号： H01L2126
CPC分类号： G10L17/22 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H04M3/2281 , H04M3/229 , H04M3/382 , H04M3/385 , H04M2201/40 , H04Q3/0016
摘要： A laser-irradiation method which comprises a process for fabricating a semiconductor device, comprising: a first step of forming a thin film amorphous semiconductor on a substrate having an insulating surface; a second step of modifying the thin film amorphous semiconductor into a crystalline thin film semiconductor by irradiating a pulse-type linear light and/or by applying a heat treatment; a third step of implanting an impurity element which imparts a one conductive type to the crystalline thin film semiconductor; and a fourth step of activating the impurity element by irradiating a pulse-type linear light and/or by applying a heat treatment; wherein the peak value, the peak width at half height, and the threshold width of the laser energy in the second and the fourth steps above are each distributed within a range of approximately ±3% of the standard value. Also claimed is a laser irradiation device which realizes the method above.
摘要翻译：一种激光照射方法，包括制造半导体器件的工艺，包括：在具有绝缘表面的衬底上形成薄膜非晶半导体的第一步骤; 通过照射脉冲型线性光和/或通过施加热处理将薄膜非晶半导体改性成晶体薄膜半导体的第二步骤; 将赋予一种导电类型的杂质元素注入晶体薄膜半导体的第三步骤; 以及通过照射脉冲型线性光和/或通过施加热处理来激活杂质元素的第四步骤; 其中上述第二和第四步骤中的峰值，半高峰值宽度和激光能量的阈值宽度各自分布在标准值的约±3％的范围内。还要求保护的是实现上述方法的激光照射装置。

72. 发明授权

US06770143B2 Method for annealing a semiconductor 失效
标题翻译：半导体退火方法
公开(公告)号：US06770143B2
公开(公告)日：2004-08-03
申请号：US10225132
申请日：2002-08-22
申请人： Hongyong Zhang , Naoto Kusumoto
发明人： Hongyong Zhang , Naoto Kusumoto
IPC分类号： C23C1600
CPC分类号： H01L21/02686 , C30B1/023 , C30B29/06 , H01L21/02532 , H01L21/2026 , Y10S117/904 , Y10S438/908 , Y10T117/10
摘要： A method for manufacturing a semiconductor device including preparing a multi-chamber system having at least first and second chambers, the first chamber for forming a film and the second chamber for processing an object with a laser light; processing a substrate in one of the first and second chambers; transferring the substrate to the other one of the first and second chambers; and processing the substrate in the other one of the chambers, wherein the first and second chambers can be isolated from one another by using a gate valve.
摘要翻译：一种制造半导体器件的方法，包括制备具有至少第一和第二腔室的多室系统，用于形成膜的第一腔室和用激光处理物体的第二腔室; 在所述第一和第二腔室之一中加工衬底; 将衬底转移到第一和第二腔室中的另一个; 以及处理另一个室中的基板，其中第一和第二室可以通过使用闸阀彼此隔离。

73. 发明授权

US06683350B1 Transistor and method for manufacturing the same 失效
标题翻译：晶体管及其制造方法
公开(公告)号：US06683350B1
公开(公告)日：2004-01-27
申请号：US09519425
申请日：2000-03-06
申请人： Naoto Kusumoto
发明人： Naoto Kusumoto
IPC分类号： H01L2701
CPC分类号： H01L29/66757 , H01L29/78609 , H01L29/78618
摘要： In a process for manufacturing a thin film transistor having a semiconductor layer constituting source and drain regions and a channel forming region, by the semiconductor layer being made thinner in the source and drain regions than in the channel forming region a structure is realized wherein, at the boundary between the source region and the channel forming region and the boundary between the drain region and the channel forming region, portions where electric field concentrations occur are displaced from the portion where a channel is formed. By reducing the OFF current (the leak current) without also reducing the ON current, a high mutual conductance is realized.
摘要翻译：在制造具有构成源极和漏极区域以及沟道形成区域的半导体层的薄膜晶体管的制造方法中，通过半导体层在沟道形成区域中的源极和漏极区域中的半导体层变薄，实现了在源极区域和沟道形成区域之间的边界以及漏极区域和沟道形成区域之间的边界，发生电场浓度的部分从形成沟道的部分偏移。通过在不降低ON电流的情况下减小OFF电流（漏电流），实现高的互导性。

74. 发明授权

US06587277B2 Apparatus and method for laser radiation 有权
公开(公告)号：US06587277B2
公开(公告)日：2003-07-01
申请号：US10024855
申请日：2001-12-18
申请人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Koichiro Tanaka
发明人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Koichiro Tanaka
IPC分类号： G02B2710
CPC分类号： G02B19/0057 , B23K26/0613 , B23K26/067 , B23K26/0738 , G02B19/0014 , G02B19/0095 , G02B27/09 , G02B27/0905 , G02B27/0927 , G02B27/0961 , G02B27/0966 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L27/1285 , H01L27/1296
摘要： There is provided an improvement on homogeneity of annealing performed utilizing radiation of a laser beam on a silicon film having a large area. In a configuration wherein a linear laser beam is applied to a surface to be irradiated, optimization is carried out on the width and number of cylindrical lenses forming homogenizers 103 and 104 for controlling the distribution of radiation energy density in the longitudinal direction of the linear beam. For example, the width of the cylindrical lenses forming the homogenizers 103 and 104 is set in the range from 0.1 mm to 5 mm, and the number of the lenses is chosen such that one lens is provided for every 5 mm-15 mm along the length of the linear laser beam in the longitudinal direction thereof. This makes it possible to improve homogeneity of the radiation energy density of the linear laser in the longitudinal direction thereof.

75. 发明授权

US06541795B2 Thin film semiconductor device and production method for the same 失效
标题翻译：薄膜半导体器件及其制造方法相同
公开(公告)号：US06541795B2
公开(公告)日：2003-04-01
申请号：US10001819
申请日：2001-12-05
申请人： Naoto Kusumoto , Yasuhiko Takemura , Hisashi Ohtani
发明人： Naoto Kusumoto , Yasuhiko Takemura , Hisashi Ohtani
IPC分类号： H01L2976
CPC分类号： H01L21/02672 , C30B1/023 , C30B29/06 , H01L21/02532 , H01L21/02686 , H01L21/2022 , H01L27/1233 , H01L29/0657 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： An object of the present invention is to provide a TFT with which better characteristics can be obtained using a good crystalline silicon film. An amorphous semiconductor film having a thickness of 400 Å or more is formed on an insulating surface, is crystallized by heat annealing or photo annealing or the combined use thereof, and is wholly or selectively etched to form a region having a thickness of 300 Å or less. This is used as a channel-forming region in a TFT.
摘要翻译：本发明的目的是提供一种使用良好的结晶硅膜可获得更好的特性的TFT。在绝缘表面上形成厚度为或以上的非晶半导体膜，通过热退火或光退火或其组合使用而结晶，并且被完全或选择性地蚀刻以形成厚度为的区域，或减。这被用作TFT中的沟道形成区域。

76. 发明授权

US06388812B2 Apparatus and method for laser radiation 失效
标题翻译：用于激光辐射的装置和方法
公开(公告)号：US06388812B2
公开(公告)日：2002-05-14
申请号：US09812360
申请日：2001-03-19
申请人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Koichiro Tanaka
发明人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Koichiro Tanaka
IPC分类号： G02B2710
CPC分类号： G02B19/0057 , B23K26/0613 , B23K26/067 , B23K26/0738 , G02B19/0014 , G02B19/0095 , G02B27/09 , G02B27/0905 , G02B27/0927 , G02B27/0961 , G02B27/0966 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L27/1285 , H01L27/1296
摘要： There is provided an improvement on homogeneity of annealing performed utilizing radiation of a laser beam on a silicon film having a large area. In a configuration wherein a linear laser beam is applied to a surface to be irradiated, optimization is carried out on the width and number of cylindrical lenses forming homogenizers 103 and 104 for controlling the distribution of radiation energy density in the longitudinal direction of the linear beam. For example, the width of the cylindrical lenses forming the homogenizers 103 and 104 is set in the range from 0.1 mm to 5 mm, and the number of the lenses is chosen such that one lens is provided for every 5 mm-15 mm along the length of the linear laser beam in the longitudinal direction thereof. This makes it possible to improve homogeneity of the radiation energy density of the linear laser in the longitudinal direction thereof.
摘要翻译：通过激光束的辐射对具有大面积的硅膜进行的退火的均匀性提供了改进。在将线性激光束施加到被照射面的构造中，对形成均匀器103,104的圆柱透镜的宽度和数量进行优化，以控制线束的纵向辐射能量密度分布。例如，形成均化器103和104的圆柱形透镜的宽度设定在0.1mm至5mm的范围内，并且选择透镜的数量使得沿着每5mm-15mm设置一个透镜线性激光束的长度方向的长度。这使得可以提高线性激光器在其纵向方向上的辐射能量密度的均匀性。

77. 发明授权

US06353244B1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06353244B1
公开(公告)日：2002-03-05
申请号：US08908281
申请日：1997-08-07
申请人： Shunpei Yamazaki , Naoto Kusumoto , Hideto Ohnuma , Koichiro Tanaka
发明人： Shunpei Yamazaki , Naoto Kusumoto , Hideto Ohnuma , Koichiro Tanaka
IPC分类号： H01L2701
CPC分类号： H01L27/1203 , G02F1/13454
摘要： A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film.
摘要翻译：具有高阈值电压的TFT连接到构成CMOS电路的每个TFT的源电极。在另一方面，像素薄膜晶体管被构造成使得离栅极线驱动电路更远的薄膜晶体管具有较低的阈值电压。在另一方面，在TFT的沟道形成区域的表面上形成可在后续步骤中移除的控制膜，并且从控制膜的上方进行掺杂。

78. 发明授权

US06337232B1 Method of fabrication of a crystalline silicon thin film semiconductor with a thin channel region 失效
标题翻译：具有薄沟道区域的晶体硅薄膜半导体的制造方法
公开(公告)号：US06337232B1
公开(公告)日：2002-01-08
申请号：US09325572
申请日：1999-06-04
申请人： Naoto Kusumoto , Yasuhiko Takemura , Hisashi Ohtani
发明人： Naoto Kusumoto , Yasuhiko Takemura , Hisashi Ohtani
IPC分类号： H01L21265
CPC分类号： H01L21/02672 , C30B1/023 , C30B29/06 , H01L21/02532 , H01L21/02686 , H01L21/2022 , H01L27/1233 , H01L29/0657 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： A method for forming a semiconductor device is disclosed. A semiconductor film comprising silicon is formed on a substrate. The semiconductor film is crystallized. The crystallized semiconductor film is patterned into a marker part for aligning a mask and an insular semiconductor part at the same time. A part of the semiconductor film to become a channel formation region is thinned to a thickness 300 Å or less.
摘要翻译：公开了一种用于形成半导体器件的方法。在基板上形成包含硅的半导体膜。半导体膜结晶。将结晶的半导体膜图案化成用于同时对准掩模和岛状半导体部件的标记部件。成为沟道形成区域的半导体膜的一部分变薄至300以下。

79. 发明授权

US06242292B1 Method of producing a semiconductor device with overlapped scanned linear lasers 失效
标题翻译：用重叠扫描线性激光器制造半导体器件的方法
公开(公告)号：US06242292B1
公开(公告)日：2001-06-05
申请号：US08572104
申请日：1995-12-14
申请人： Shunpei Yamazaki , Naoto Kusumoto , Koichiro Tanaka
发明人： Shunpei Yamazaki , Naoto Kusumoto , Koichiro Tanaka
IPC分类号： H01L2184
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/66765 , H01L29/78696
摘要： In producing a semiconductor device by annealing with laser light irradiation, while a linear laser light is scanned in a direction perpendicular to a line, the annealing is performed for a semiconductor material. In this state, since an anneal effect in a beam lateral direction corresponding to a line direction is 2 times or more different than that in the scanning direction, a plurality of semiconductor elements are formed along a line direction in which the linear laser light is irradiated. Also, a line direction connecting the source and drain region of a thin film transistor is aligned to the line direction of the linear laser light.
摘要翻译：在通过激光照射进行退火来制造半导体器件的同时，在垂直于线的方向上扫描线性激光，对半导体材料进行退火。在这种状态下，由于在与线方向对应的光束横向的退火效应是与扫描方向相反的2倍以上的退火效应，因此沿着照射线状激光的线方向形成多个半导体元件。而且，连接薄膜晶体管的源极和漏极区域的线方向与线性激光的线方向对准。

80. 发明授权

US06215595B1 Apparatus and method for laser radiation 失效
标题翻译：用于激光辐射的装置和方法
公开(公告)号：US06215595B1
公开(公告)日：2001-04-10
申请号：US09583450
申请日：2000-05-30
申请人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Koichiro Tanaka
发明人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Koichiro Tanaka
IPC分类号： G02B2710
CPC分类号： G02B19/0057 , B23K26/0613 , B23K26/067 , B23K26/0738 , G02B19/0014 , G02B19/0095 , G02B27/09 , G02B27/0905 , G02B27/0927 , G02B27/0961 , G02B27/0966 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L27/1285 , H01L27/1296
摘要： There is provided an improvement on homogeneity of annealing performed utilizing radiation of a laser beam on a silicon film having a large area. In a configuration wherein a linear laser beam is applied to a surface to be irradiated, optimization is carried out on the width and number of cylindrical lenses forming homogenizers 103 and 104 for controlling the distribution of radiation energy density in the longitudinal direction of the linear beam. For example, the width of the cylindrical lenses forming the homogenizers 103 and 104 is set in the range from 0.1 mm to 5 mm, and the number of the lenses is chosen such that one lens is provided for every 5 mm-15 mm along the length of the linear laser beam in the longitudinal direction thereof. This makes it possible to improve homogeneity of the radiation energy density of the linear laser in the longitudinal direction thereof.
摘要翻译：通过激光束的辐射对具有大面积的硅膜进行的退火的均匀性提供了改进。在将线性激光束施加到被照射面的构造中，对形成均匀器103,104的圆柱透镜的宽度和数量进行优化，以控制线束的纵向辐射能量密度分布。例如，形成均化器103和104的圆柱形透镜的宽度设定在0.1mm至5mm的范围内，并且选择透镜的数量使得沿着每5mm-15mm设置一个透镜线性激光束的长度方向的长度。这使得可以提高线性激光器在其纵向方向上的辐射能量密度的均匀性。

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