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71. 发明专利

JPS61114587A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：JPS61114587A
公开(公告)日：1986-06-02
申请号：JP23493184
申请日：1984-11-09
申请人： Hitachi Ltd
发明人： ONO YUICHI , KASHIWADA YASUTOSHI , KAYANE NAOKI , KAJIMURA TAKASHI , KONO TOSHIHIRO
IPC分类号： H01S5/00
摘要： PURPOSE: To prevent defects from being produced in the interface of a current constricting layer and to obtain a high reliability, by depositing a crystal layer having the same conductivity, type as that of a semiconductor substrate on the substrate by means of the vapor phase growth, and successively depositing a crystal layer having the opposite conductivity type to that of the substrate by the vapor phase growth so as to provide the current constricting layer.
CONSTITUTION: A P type GaAs layer 2 is deposited on a P
+ type GaAs substrate 1 by the vapor phase growth. Subsequently, the kinds of impurities are changed so that an N type GaAs layer 3 is continuously deposited by the epitaxial growth. A V-shaped groove 4 is then formed, and a double hetero junction 5, 6, 7 and a cap layer 8 for an electrode are formed by the conventional liquid- phase growth. Electrodes 9 and 10 are further formed. According to this invention, a current constricting layer is not provided directly on the substrate, but the current constricting layer 3 is provided by means of the grown junction so that no crystal defect is produced in the interface between the layers 2 and 3. Accordingly, a high reliability can be obtained.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：为了防止在电流收缩层的界面产生缺陷并获得高的可靠性，通过在气相生长中沉积具有与半导体衬底相同的导电性的晶体层并通过气相生长依次沉积具有与衬底相反的导电类型的晶体层，从而提供电流限制层。构成：P型GaAs层2通过气相生长沉积在P ++型GaAs衬底1上。随后，改变杂质的种类，使得通过外延生长连续沉积N型GaAs层3。然后形成V形槽4，并且通过常规的液相生长形成用于电极的双异质结5,6,7和盖层8。进一步形成电极9和10。根据本发明，电流限制层不直接设置在基板上，而是通过生长结提供电流收缩层3，使得层2和3之间的界面中不会产生晶体缺陷。因此，可以获得高可靠性。

72. 发明专利

JPS60167393A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS60167393A
公开(公告)日：1985-08-30
申请号：JP896985
申请日：1985-01-23
申请人： HITACHI LTD
发明人： KASHIWADA YASUTOSHI , KOUNO TOSHIHIRO , AIKI KUNIO , KURODA TAKAROU , UMEDA JIYUNICHI
IPC分类号： H01L21/208 , H01S5/00 , H01S5/223
摘要： PURPOSE:To manufacture a semiconductor laser element, in which an active layer curved bilaterally symmetrically in a groove is obtained through an easy manufacture, by using a substrate formed by inclining the substrate only by a fixed angle to a predetermined surface. CONSTITUTION:The main surface of a substrate is formed within a range of ¦theta2¦ direction is theta1 and displacement in the direction vertical to the longitudinal direction is theta2. A laser element having high quality is obtained particularly within a range of ¦theta2¦

73. 发明专利

JPS60132379A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS60132379A
公开(公告)日：1985-07-15
申请号：JP23974283
申请日：1983-12-21
申请人： HITACHI LTD
发明人： FUJISAKI YOSHIHISA , TSUJI SHINJI , KAYANE NAOKI , KAJIMURA TAKASHI , KASHIWADA YASUTOSHI
IPC分类号： H01S5/00 , H01S5/12
摘要： PURPOSE:To oscillate a single wavelength in a high yield by forming a structure that the effective refractive index of a waveguide is varied periodically in a resonator longitudinal direction. CONSTITUTION:After an active layer 26 and a photoguide layer 24 are epitaxially grown on an n type InP substrate 27, a striped mask 29 for forming a diffraction grating is formed perpendicularly to the longitudinal direction of a resonator. The valley portion 28 of the grating formed in the layer 24 is p-conductive type and the crest portion 24 is an n type conductive type. When a periodic structure is formed in the photoguide layer, p type carrier implanted by the p type electrode is concentrated in a p type region 25 having low potential difference, the carrier density of the layer 26 is enhanced, the effective refractive index becomes extremely small in the valley of the grating, the carrier density decreases and the carrier density is increased in the crest of the grating. Thus, many elements can be formed in a single wavelength in a high yield.

74. 发明专利

JPS6029996B2 失效
公开(公告)号：JPS6029996B2
公开(公告)日：1985-07-13
申请号：JP9958277
申请日：1977-08-22
申请人： HITACHI LTD
发明人： SUZUKI ATSUSHI , TANIMIZU SHINKICHI , MORIOKA MAKOTO , KASHIWADA YASUTOSHI , MANABE TOSHIKATSU
IPC分类号： G06K7/12 , G06K7/10 , G06K9/20

75. 发明专利

JPS60118691A METHOD FOR GROWING CRYSTAL 失效
公开(公告)号：JPS60118691A
公开(公告)日：1985-06-26
申请号：JP22203183
申请日：1983-11-28
申请人： HITACHI LTD
发明人： KASHIWADA YASUTOSHI , ONO YUUICHI , NAKATSUKA SHINICHI , KAYANE NAOKI , OOISHI AKIO
IPC分类号： C30B25/10 , C30B25/04 , H01L21/205
摘要： PURPOSE:To grow selectively a crystal on a substrate in a part at a high temperature in growing the crystal by the epitaxial growth according to the MO CVD (metal organic chemical vapor deposition) method, by increasing the temperature of a specific part of the substrate with rays of light. CONSTITUTION:The surface of a substrate 1 is coated with a coating film 3, e.g. SiO2 film, and a stripelike groove 2 is formed by the photolithographic method, etc. The substrate 1 is then put into a crystal growth chamber of an MOCVD (metal organic chemical vapor deposition) apparatus, and the whole substrate 1 is heated at about 300 deg.C by high-frequency heating, and the temperature near the groove 2 is increased to about 800 deg.C by laser beams 4. An epitaxial layer is formed in the groove 2 in this state, and the coating film 3 is then removed by hydrofluoric acid, etc. Thus, the amount of the crystal grown on the coating film 3 is reduced, and the step for removing the coating film 3 is facilitated. The amount of the overgrowth of the growth layer near the shoulder of the groove 2 is little, and the process for manufacturing integrated elements is facilitated.

76. 发明专利

JPS59100583A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS59100583A
公开(公告)日：1984-06-09
申请号：JP20941982
申请日：1982-12-01
申请人： HITACHI LTD
发明人： KURODA TAKAROU , KAJIMURA TAKASHI , KASHIWADA YASUTOSHI , KAYANE NAOKI , OOUCHI HIROBUMI
IPC分类号： H01S5/00 , H01S5/40
摘要： PURPOSE:To obtain an element with good reproducibility by one crystal growth, by forming a pattern on a substrate crystal surface in a phased array laser by lithography. CONSTITUTION:Convex type stripes 2 having interconnecting parts 3 are formed on the surface of a substrate crystal for laser. When the laser having an ordinary double heterostructure is grown on the substrate by using said substrate, the shape of the convex parts is copied to an active layer 31. When clad layers 21 and 41 are grown, the crystal surface after the growth of a gap layer 51 becomes flat. When Zn diffused electrode regions 61, which excite the stripe regions 2, are provided, the laser light is guided by the effective refractive index difference caused by the steps in the active layer 31. The phases of the laser light beams in all the stripes are synchronized through the interconnecting parts 3.

77. 发明专利

JPS5911690A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：JPS5911690A
公开(公告)日：1984-01-21
申请号：JP11976882
申请日：1982-07-12
申请人： Hitachi Ltd
发明人： YAMASHITA SHIGEO , KAYANE NAOKI , OOUCHI HIROBUMI , KAJIMURA TAKASHI , KASHIWADA YASUTOSHI
IPC分类号： H01S5/00 , H01S5/223
CPC分类号： H01S5/2234
摘要： PURPOSE:To obtain the multi-axis mode semiconductor laser device, which operates stably against disturbances such as return lights by the reflection of laser lights, by forming a stepped difference in thickness to one of second and third semiconductor layers and giving an optical guide constituted in a first semiconductor layer inequality with regard to the direction of advance of laser lights. CONSTITUTION:An N-type GaAs layer 12 is formed on a P type GaAs substrate surface 11 first, and a concave groove, width thereof changes irregularly, is prepared through photolighograhy. A P type Ga0.55Al0.45As clad layer 13, an undoped Ga0.86Al0.14As active layer 14, an N type Ga0.55Al0.45As clad layer 15, and an N type GaAs cap layer 16 are formed continuously through a normal liquid growth method. An N electrode 17 is formed to the surface and a P electrode 18 to the back. Since currents are constricted efficiently in a laser active section by the N type GaAs layer 12 formed to the surface of the substrate 11 in the laser element, the laser, oscillation threshold thereof can be reduced, oscillates at approximately 30mA oscillation threshold and 780nm wavelength, and oscillates stably in a lateral fundamental mode up to 20mW.
摘要翻译：目的：为了获得通过形成与第二和第三半导体层之一形成厚度差的步骤，通过激光的反射而稳定地对诸如返回光的干扰进行操作的多轴模式半导体激光装置，并且给出构成的光导体在关于激光的前进方向的第一半导体层不等式中。构成：首先在P型GaAs衬底表面11上形成N型GaAs层12，并且通过光电耦合制备凹槽的宽度不规则地变化。 AP型Ga0.55Al0.45As包层13，未掺杂的Ga 0.86 Al0.14As有源层14，N型Ga 0.55 Al0.45As包层15和N型GaAs覆盖层16通过正常液体生长连续形成方法。在表面上形成N电极17，将P电极18形成在背面。由于在激光元件中形成于基板11的表面的N型GaAs层12在激光有源部中有效地收缩电流，所以能够降低激光器的振荡阈值，振荡大约为30mA振荡阈值和780nm波长，并且在侧向基本模式下稳定地振荡到20mW。

78. 发明专利

JPS58196087A Semiconductor laser element 失效
标题翻译：半导体激光元件
公开(公告)号：JPS58196087A
公开(公告)日：1983-11-15
申请号：JP7825482
申请日：1982-05-12
申请人： Hitachi Ltd
发明人： YAMASHITA SHIGEO , KAYANE NAOKI , KASHIWADA YASUTOSHI , KAJIMURA TAKASHI , OOUCHI HIROBUMI
IPC分类号： H01S5/00 , H01S5/20
CPC分类号： H01S5/2059
摘要： PURPOSE:To reduce the unstability of photooutput by a method wherein the width of a narrow stripe region of a semiconductor laser element which has a P type impurity region in the other region except for the above-mentioned stripe region is formed at a value less than a specific value. CONSTITUTION:A P type clad layer 2, an N type, P type or undoped laser active layer 3, and an N type clad layer 4 are formed on a P type semiconductor substrate 1. Further, a cap layer 5 is formed. Next, an impurity diffused region 6 is formed by diffusing a P type impurity in the other region except for the narrow stripe region. It is contrived that the width of the stripe region 10 wherein the above-mentioned P type impurity is not diffused becomes less than 5.0mum. The region 6 is reversely biased when a normal bias voltage is impressed. Therefore, current is brought into stricture efficiently to the region 10 wherein the P type impurity is not diffused, and accordingly a semiconductor laser element having the distribution of gain in a narrow region can be obtained.
摘要翻译：目的：为了降低光输出的不稳定性，其中除了上述条纹区域之外，在另一区域中具有P型杂质区域的半导体激光元件的窄条区域的宽度形成为小于一个具体的价值。构成：在P型半导体衬底1上形成P型覆盖层2，N型，P型或未掺杂的激光器活性层3和N型覆盖层4.此外，形成覆盖层5。接下来，通过在除了窄条纹区域之外的其它区域中扩散P型杂质，形成杂质扩散区域6。其中，上述P型杂质不扩散的条纹区域10的宽度变得小于5.0μm。当施加正常偏置电压时，区域6被反向偏置。因此，电流有效地进入到其中P型杂质不扩散的区域10，因此可以获得具有窄区域增益分布的半导体激光元件。

79. 发明专利

JPS58196014A Method for liquid phase epitaxial growth 失效
标题翻译：液相外延生长方法
公开(公告)号：JPS58196014A
公开(公告)日：1983-11-15
申请号：JP7824382
申请日：1982-05-12
申请人： Hitachi Ltd
发明人： KASHIWADA YASUTOSHI , KAJIMURA TAKASHI , AIKI KUNIO , SHIGE NORIYUKI , SAWAI MASAAKI
IPC分类号： H01L21/208 , H01S5/00
CPC分类号： H01L21/02628
摘要： PURPOSE:To remove an element of bad life property caused by meniscus line at selecting test for a short time, by a method wherein stripe direction of a substrate single-crystal is made perpendicular to sliding direction of a growing solution. CONSTITUTION:To obtain epitaxial layer by contacting a growing solution with a substrate single-crystal 13, the crystal 13 is fixed and the growing solution is slided. The crystal 13 is installed to a board so that stripe direction 15 of the crystal 13 is perpendicular to sliding direction 16 of the growing solution. Since meniscus line produced at the liquid phase epitaxial growing is made approximately parallel to stripe direction of an element, any element of bad life property caused by the meniscus line can be removed at selecting test for a short time.
摘要翻译：目的：通过使衬底单晶的条纹方向垂直于生长溶液的滑动方向的方法，在短时间内选择测试时去除由弯液面线引起的不良生命性质的元素。构成：为了通过使生长溶液与衬底单晶13接触来获得外延层，晶体13被固定并且生长溶液被滑动。将晶体13安装到板上，使得晶体13的条纹方向15垂直于生长溶液的滑动方向16。由于在液相外延生长中产生的弯液面线大致平行于元件的条纹方向，所以在选择测试时可以在短时间内去除由弯液面线引起的任何不良寿命的元素。

80. 发明专利

JPS58132986A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS58132986A
公开(公告)日：1983-08-08
申请号：JP1498682
申请日：1982-02-03
申请人： HITACHI LTD
发明人： KAJIMURA TAKASHI , KURODA TAKAROU , KASHIWADA YASUTOSHI , MENE NAOKI , AIKI KUNIO
IPC分类号： H01S5/00 , H01S5/042 , H01S5/223
摘要： PURPOSE:To obtain stable lateral basic mode operation with a high optical output by giving difference between refraction indices of a pair of light and current confining layers in both sides of active layer of a curved active layer type semiconductor laser device. CONSTITUTION:A photo resist film having a window is formed on the surface of an N type GaAs substrate 1 by the photo resist processing. A groove 9 is formed on the substrate 1 by the etching through such window. After removing the photo resist film, an n-Ga1-yAlyAs clad layer 2, Ga1-xAlxAs active layer 3, p-Ga1-zAlzAs clad layer 4 and n-GaAs cap layer 5 are formed on the substrate. Thickness of the layer 2 is set so that the active layer 3 to be grown thereon is curved in the range of 0.2-1mum to the groove shoulder part at the center of groove. The active layer 3 becomes thick at the center of curved area owing to the liquid phase growth mechanism.

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