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71. 发明申请

US20070020940A1 Method of forming fluorinated carbon film 失效
标题翻译：形成氟化碳膜的方法
公开(公告)号：US20070020940A1
公开(公告)日：2007-01-25
申请号：US10558080
申请日：2004-05-19
申请人： Tadahiro Ohmi , Masaki Hirayama
发明人： Tadahiro Ohmi , Masaki Hirayama
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/0212 , C23C16/0245 , C23C16/26 , H01L21/02274 , H01L21/02315 , H01L21/3127
摘要： The present invention is made to solve a problem to improve adhesion between a fluorine-containing carbon film and a foundation film. In order to achieve this object, according to the present invention, a fluorine-containing carbon film forming method of forming a fluorine-containing carbon film on a to-be-processed substrate includes: a first process of carrying out plasma excitation of a rare gas, and carrying out a surface treatment of the to-be-processed substrate with the use of the thus-plasma-excited rare gas with a substrate processing apparatus; and a second process of forming the fluorine-containing carbon film on the to-be-processed substrate, wherein the substrate processing apparatus has a microwave antenna electrically connected to a microwave power source.
摘要翻译：本发明是为了解决提高含氟碳膜和基础膜之间的粘附性的问题而做出的。为了实现该目的，根据本发明，在被处理基板上形成含氟碳膜的含氟碳膜形成方法包括：进行稀有等离子体激发的第一工序利用基板处理装置利用等离子体激发的稀有气体进行被处理基板的表面处理，以及在被处理基板上形成含氟碳膜的第二工序，其中，基板处理装置具有与微波电源电连接的微波天线。

72. 发明申请

US20060289116A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20060289116A1
公开(公告)日：2006-12-28
申请号：US11488059
申请日：2006-07-18
申请人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32238 , H01J37/32192 , H01J37/32357 , H01J37/3244
摘要： A plasma processing apparatus comprises a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed, an evacuation system coupled to the processing vessel, a plasma gas supply part for supplying plasma gas to an interior of the processing vessel, a microwave antenna provided on the processing vessel in correspondence to the substrate to be processed, and a process gas supply part provided between the substrate to be processed on the stage and the plasma gas supply part so as to face the substrate to be processed on the stage, wherein the process gas supply part comprises a plurality of first apertures for passing through plasma formed in the interior of the processing vessel, a process gas passage capable of connecting to a process gas source, a plurality of second apertures in communication with the process gas passage and a diffusion part provided opposite to the second aperture for diffusing process gas released from the second aperture.
摘要翻译：等离子体处理装置包括由外壁限定的处理容器，具有用于保持要处理的基板的台，连接到处理容器的抽空系统，用于将等离子体气体供应到处理容器的内部的等离子体气体供应部设置在处理容器上的与要处理的基板相对应的微波天线，以及处理气体供给部，其设置在台面上的待处理基板与等离子体气体供给部之间，以与待处理基板相对，其中处理气体供应部分包括用于通过形成在处理容器内部的等离子体的多个第一孔，能够连接到处理气体源的处理气体通道，与第二孔连通的多个第二孔处理气体通道和与第二孔相对设置的用于扩散从第二孔释放的处理气体的扩散部分。

73. 发明授权

US07115184B2 Plasma processing device 有权
标题翻译：等离子处理装置
公开(公告)号：US07115184B2
公开(公告)日：2006-10-03
申请号：US10276673
申请日：2002-03-28
申请人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01J37/32238 , H01J37/32192 , H01J37/32357 , H01J37/3244
摘要： A plasma processing apparatus includes a processing vessel, a means for holding a substrate to be processed, an evacuation system coupled to the processing vessel, a means for supplying plasma gas to an interior of the processing vessel, a microwave antenna provided on the processing vessel, and a process gas supply part comprised of two components. The first component includes a plurality of first apertures for passing through plasma formed in interior of the processing vessel, a process gas passage, and a plurality of second apertures in communication with the process gas passage. The second component includes a plurality of third apertures axially aligned with the first apertures in the first component and diffusion surfaces upon recessed areas of the second component, located opposite to the second apertures in the first component.
摘要翻译：等离子体处理装置包括处理容器，用于保持要处理的基板的装置，耦合到处理容器的抽空系统，用于向处理容器的内部供应等离子体气体的装置，设置在处理容器上的微波天线，以及由两个部件组成的工艺气体供给部。第一部件包括用于穿过形成在处理容器内部的等离子体的多个第一孔，处理气体通道和与处理气体通道连通的多个第二孔。第二部件包括与第一部件中的第一孔轴向对齐的多个第三孔和位于第二部件的与第一部件中的第二孔相对的凹陷区域上的扩散表面。

74. 发明授权

US06893970B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US06893970B2
公开(公告)日：2005-05-17
申请号：US10015446
申请日：2001-12-12
申请人： Norio Kanetsuki , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Norio Kanetsuki , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23F4/00 , H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/3213 , H01L21/768
CPC分类号： C23F4/00 , H01L21/32136
摘要： According to a plasma processing method, a process gas supplied into a process chamber is used to generate plasma from the process gas and process a substrate placed in the process chamber by means of the plasma. The substrate includes stacked films of at least two types to be etched by the plasma, and, according to any of the films that is to be etched, a change is made in the process gas in the plasma generation period. Accordingly, the time required for any process except for the main plasma process can be shortened so that the total time for the entire plasma process can be shortened to improve the processing speed.
摘要翻译：根据等离子体处理方法，使用供应到处理室中的处理气体从处理气体产生等离子体，并通过等离子体处理放置在处理室中的衬底。衬底包括由等离子体蚀刻的至少两种类型的堆叠膜，并且根据要蚀刻的任何膜，在等离子体产生周期中的处理气体中发生变化。因此，除了主等离子体处理之外的任何处理所需的时间可以缩短，从而可以缩短整个等离子体处理的总时间，从而提高处理速度。

75. 发明申请

US20050092437A1 Plasma processing equipment 审中-公开
标题翻译：等离子体处理设备
公开(公告)号：US20050092437A1
公开(公告)日：2005-05-05
申请号：US10493946
申请日：2003-07-03
申请人： Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto
IPC分类号： H05H1/46 , C23C16/44 , C23C16/455 , C23C16/511 , H01J37/32 , H01L21/31 , C23F1/00
CPC分类号： C23C16/45568 , C23C16/511 , H01J37/32192 , H01J37/32238 , H01J37/3244
摘要： A plasma processing apparatus comprises a processing vessel defined by an outer wall and provided with a stage that holds a substrate to be processed thereon, an evacuation system coupled to the processing vessel, a microwave window provided on the processing vessel as a part of the outer wall so as to face the substrate to be processed on the stage, a plasma gas supplying part supplying a plasma gas to the processing vessel, and a microwave antenna provided on the processing vessel in correspondence to the microwave. The plasma gas supplying part includes a porous medium and the plasma gas supplying part supplies the plasma gas through the porous medium.
摘要翻译：等离子体处理装置包括由外壁限定的处理容器，该处理容器具有保持要处理的基板的台，连接到处理容器的抽空系统，设置在处理容器上的作为外部的一部分的微波窗口壁，以便在台架上面对要处理的基板，向处理容器供应等离子体气体的等离子体气体供给部分和与微波对应地设置在处理容器上的微波天线。等离子体气体供给部包括多孔介质，等离子体气体供给部通过多孔介质供给等离子体气体。

76. 发明授权

US06818852B2 Microwave plasma processing device, plasma processing method, and microwave radiating member 失效
标题翻译：微波等离子体处理装置，等离子体处理方法和微波辐射构件
公开(公告)号：US06818852B2
公开(公告)日：2004-11-16
申请号：US10344761
申请日：2003-02-14
申请人： Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto
IPC分类号： B23K900
CPC分类号： H01J37/3222 , H01J37/32192
摘要： A placement stage (24) on which a semiconductor wafer (W) is place is provided within a processing container (22). A microwave is generated by a microwave generator (76), and the microwave is introduced into a process container (22) through a flat antenna member (66). The flat antenna member (66) has a plurality of slots (84) arranged along a plurality of circumferences, and the plurality of circumferences are non-concentric to each other. A distribution of plasma density in the flat antenna member (66) in a radial direction is uniform.
摘要翻译：在处理容器（22）内设置放置有半导体晶片（W）的放置台（24）。由微波发生器（76）产生微波，微波通过平板天线构件（66）引入处理容器（22）。扁平天线构件（66）具有沿着多个圆周布置的多个狭槽（84），并且多个周边彼此不同心。扁平天线构件（66）中的等离子体密度在径向上的分布是均匀的。

77. 发明授权

US06753496B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06753496B2
公开(公告)日：2004-06-22
申请号：US10010383
申请日：2001-12-07
申请人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： B23K1000
CPC分类号： B23K10/003 , B23K2101/40
摘要： On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.
摘要翻译：在暴露于大气的微波入口窗的一侧，设有具有狭缝的槽板和谐振单元。槽板和谐振单元整体地放置成可以通过线性导轨相对于处理室滑动。以这种方式，可以提供执行高度均匀的等离子体处理的等离子体处理装置，并且在等离子体产生性方面是优异的。

78. 发明授权

US06726802B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06726802B2
公开(公告)日：2004-04-27
申请号：US10211498
申请日：2002-08-02
申请人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： H05H100
CPC分类号： H01J37/32211 , H01J37/32192 , H01J37/32266
摘要： A plasma processing apparatus includes a slot plate having a slot-formed region for passing microwave from a waveguide to a microwave entrance window, and a slot plate drive unit driving the slot plate to change the position of the slot plate with respect to the microwave entrance window. The slot plate is thus moved with respect to the microwave entrance window to change at least one of the position, number and area of slot openings where the microwave is passed. The plasma processing apparatus accordingly ensures uniform plasma processing even if the process condition significantly changes when films on a large-area substrate or wafer to be processed are made of different materials or a stacked-layer film composed of layers of different materials is to be processed.
摘要翻译：等离子体处理装置包括：槽板，其具有用于将微波从波导传递到微波入口窗口的槽形区域;以及槽板驱动单元，其驱动槽板以改变槽板相对于微波入口的位置窗口。狭缝板因此相对于微波入口窗移动，以改变微波通过的槽口的位置，数量和面积中的至少一个。因此，等离子体处理装置即使在待处理的大面积基板或晶片上的膜由不同的材料制成或由不同材料的层构成的叠层膜将被处理时，即使处理条件显着变化，也能确保均匀的等离子体处理。

79. 发明授权

US06638392B2 Plasma process apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06638392B2
公开(公告)日：2003-10-28
申请号：US09730739
申请日：2000-12-07
申请人： Naoko Yamamoto , Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
发明人： Naoko Yamamoto , Takamitsu Tadera , Tatsushi Yamamoto , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： H05H100
CPC分类号： H01J37/32192 , H01J37/3244
摘要： A plasma process apparatus includes a dielectric plate to emit plasma inside a chamber, and dielectric plate support members to support a dielectric plate. A plurality of gas introduction holes to supply reaction gas to the chamber interior are provided at the dielectric plate support members. The outlet of the gas introduction hole is open at the side facing the surface of substrate 8, and arranged at a peripheral region outer than dielectric plate 5. Ground potential is applied to a chamber lid and the dielectric plate support members, and bias voltage is applied to the substrate. Accordingly, a low-cost plasma process apparatus that can process uniformly a substrate of a large area using uniform plasma can be obtained.
摘要翻译：等离子体处理装置包括在室内发射等离子体的电介质板和用于支撑电介质板的电介质板支撑构件。在电介质板支撑构件上设置有用于向反应室内部供应反应气体的多个气体导入孔。气体导入孔的出口在与基板8的表面相对的一侧开口，并布置在电介质板5外侧的周边区域。接地电位施加到室盖和电介质板支撑构件，偏压为施加到基底。因此，可以获得能够使用均匀等离子体均匀地处理大面积的基板的低成本等离子体处理装置。

80. 发明授权

US06585851B1 Plasma etching device 失效
公开(公告)号：US06585851B1
公开(公告)日：2003-07-01
申请号：US09380520
申请日：1999-11-26
申请人： Tadahiro Ohmi , Masaki Hirayama , Haruyuki Takano , Yusuke Hirayama
发明人： Tadahiro Ohmi , Masaki Hirayama , Haruyuki Takano , Yusuke Hirayama
IPC分类号： C23F108
CPC分类号： H01J37/32623 , H01J37/32082 , H01J37/3266
摘要： A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.

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