专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US07785672B2 Method of controlling the film properties of PECVD-deposited thin films 有权
标题翻译：控制PECVD沉积薄膜的膜性能的方法
公开(公告)号：US07785672B2
公开(公告)日：2010-08-31
申请号：US11021416
申请日：2004-12-22
申请人： Soo Young Choi , John M. White , Qunhua Wang , Beom Soo Park
发明人： Soo Young Choi , John M. White , Qunhua Wang , Beom Soo Park
IPC分类号： H05G1/24 , H05H1/02
CPC分类号： H01J37/32082 , C23C16/345 , C23C16/45565 , C23C16/5096 , H01J37/3244 , H01L21/0217 , H01L21/02274 , H01L21/31612
摘要： We have discovered methods of controlling a combination of PECVD deposition process parameters during deposition of thin films which provides improved control over surface standing wave effects which affect deposited film thickness uniformity and physical property uniformity. By minimizing surface standing wave effects, the uniformity of film properties across a substrate surface onto which the films have been deposited is improved. In addition, we have developed a gas diffusion plate design which assists in the control of plasma density to be symmetrical or asymmetrical over a substrate surface during film deposition, which also provides improved control over uniformity of deposited film thickness.
摘要翻译：我们已经发现了在沉积薄膜期间控制PECVD沉积工艺参数的组合的方法，其提供了影响沉积膜厚度均匀性和物理性质均匀性的表面驻波效应的改进控制。通过最小化表面驻波效应，改善了膜沉积在其上的衬底表面上的膜性质的均匀性。此外，我们开发了一种气体扩散板设计，其有助于在膜沉积期间等离子体密度在衬底表面上对称或不对称，这也提供了对沉积膜厚度的均匀性的改进的控制。

72. 发明申请

US20100206483A1 RF Bus and RF Return Bus for Plasma Chamber Electrode 有权
标题翻译：射频总线和等离子腔室电极的RF返回总线
公开(公告)号：US20100206483A1
公开(公告)日：2010-08-19
申请号：US12705600
申请日：2010-02-13
申请人： Carl A. Sorensen , Jozef Kudela , Robin L. Tiner , Suhail Anwar , John M. White
发明人： Carl A. Sorensen , Jozef Kudela , Robin L. Tiner , Suhail Anwar , John M. White
IPC分类号： C23F1/08 , C23C16/00 , C23C16/50
CPC分类号： H01J37/32174 , H01J37/32091
摘要： For coupling RF power from an RF input of a plasma chamber to the interior of a plasma chamber, an RF bus conductor is connected between the RF input and a plasma chamber electrode. In one embodiment, an RF return bus conductor is connected to an electrically grounded wall of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor.
摘要翻译：为了将来自等离子体室的RF输入的RF功率耦合到等离子体室的内部，RF总线导体连接在RF输入端和等离子体室电极之间。在一个实施例中，RF返回总线导体连接到室的电接地壁，并且RF总线导体和RF返回总线导体具有彼此平行并相对的相应表面。在另一个实施例中，RF总线导体具有垂直于等离子体室电极表面的最长尺寸的横截面，其最接近RF总线导体。

73. 发明申请

US20100122655A1 BALL SUPPORTED SHADOW FRAME 审中-公开
标题翻译：球支撑阴影框架
公开(公告)号：US20100122655A1
公开(公告)日：2010-05-20
申请号：US12614479
申请日：2009-11-09
申请人： Robin L. Tiner , John M. White , Kyung-Tae Kim
发明人： Robin L. Tiner , John M. White , Kyung-Tae Kim
IPC分类号： B05C11/00 , B23P11/00
CPC分类号： C23C16/4585 , C23C16/042 , Y10T29/49895
摘要： Embodiments disclosed herein generally include an alignment assembly for aligning a shadow frame on a susceptor. For producing large area flat panel displays or solar panels, the shadow frame that protects the areas of the susceptor not covered by the substrate from deposition may be so large that the shadow frame bends and doesn't properly align. By utilizing an alignment assembly having one or more ball bearings, the shadow frame may roll on the susceptor to a proper alignment position. Thus, the shadow frame may be prevented from bending and also align on the susceptor.
摘要翻译：本文公开的实施例通常包括用于对准基座上的阴影框架的对准组件。为了制造大面积平板显示器或太阳能电池板，保护未被基板覆盖的基座的区域沉积的阴影框架可能太大，使得阴影框架弯曲并且不能正确对准。通过利用具有一个或多个球轴承的对准组件，阴影框架可以在基座上滚动到适当的对准位置。因此，可以防止阴影框架弯曲并且在基座上对准。

74. 发明申请

US20100080933A1 MULTI-ELECTRODE PECVD SOURCE 有权
标题翻译：多电极PECVD源
公开(公告)号：US20100080933A1
公开(公告)日：2010-04-01
申请号：US12353638
申请日：2009-01-14
申请人： Jozef Kudela , John M. White
发明人： Jozef Kudela , John M. White
IPC分类号： C23C16/505
CPC分类号： C23C16/5096 , C23C16/54 , H01J37/32091 , H01J37/32183 , H01J37/3244 , H01J37/32568 , H01J37/32752
摘要： Embodiments of the present invention generally relate to methods and apparatus for plasma generation in plasma processes. The methods and apparatus generally include a plurality of electrodes. The electrodes are connected to a RF power source, which powers the electrodes out of phase from one another. Adjacent electrodes are electrically isolated from one another by electrically insulating members disposed between and coupled to the electrodes. Processing gas may be delivered and/or withdrawn through the electrodes and/or the electrically insulating members. The substrate may remain electrically floating because the plasma may be capacitively coupled to it through a differential RF source drive.
摘要翻译：本发明的实施例一般涉及等离子体工艺中等离子体产生的方法和装置。所述方法和装置通常包括多个电极。电极连接到RF电源，该电源使电极彼此相位不相位。相邻的电极通过设置在电极之间并耦合到电极的电绝缘构件彼此电隔离。处理气体可以通过电极和/或电绝缘构件输送和/或排出。由于等离子体可以通过差分RF源驱动电容耦合到其上，基板可能保持电浮置。

75. 发明授权

US07674662B2 Process for making thin film field effect transistors using zinc oxide 有权
标题翻译：使用氧化锌制造薄膜场效应晶体管的工艺
公开(公告)号：US07674662B2
公开(公告)日：2010-03-09
申请号：US11458511
申请日：2006-07-19
申请人： Yan Ye , John M. White , David J. Eaglesham
发明人： Yan Ye , John M. White , David J. Eaglesham
IPC分类号： H01L21/84
CPC分类号： H01L29/7869
摘要： The present invention comprises a method of forming a zinc oxide based thin film transistor by blanket depositing the zinc oxide layer and the source-drain metal layer and then wet etching through the zinc oxide while etching through the source-drain electrode layer. Thereafter, the active channel is formed by dry etching the source-drain electrode layer without effectively etching the zinc oxide layer.
摘要翻译：本发明包括通过将氧化锌层和源极 - 漏极金属层进行橡皮沉积形成氧化锌基薄膜晶体管，然后在通过源 - 漏电极层进行蚀刻时通过氧化锌进行湿蚀刻的方法。此后，通过干蚀刻源漏电极层形成有源沟道，而无需有效地蚀刻氧化锌层。

76. 发明授权

US07637580B2 Methods and apparatus for a high resolution inkjet fire pulse generator 失效
标题翻译：高分辨率喷墨式脉冲发生器的方法和装置
公开(公告)号：US07637580B2
公开(公告)日：2009-12-29
申请号：US11238637
申请日：2005-09-29
申请人： Bassam Shamoun , Eugene Mirro , Janusz Jozwiak , Quanyuan Shang , Shinichi Kurita , John M. White
发明人： Bassam Shamoun , Eugene Mirro , Janusz Jozwiak , Quanyuan Shang , Shinichi Kurita , John M. White
IPC分类号： B41J29/38
CPC分类号： B41J3/407 , B41J2/04505 , B41J2/04541 , B41J2/04581 , B41J2/04588 , B41J2/0459 , B41J2/04593 , B41J2/125 , B41J3/28 , B41J3/543 , B41J25/001 , B41J25/003 , B41J25/005 , B41J29/15 , B41J29/393
摘要： The invention provides methods, systems, and drivers for controlling an inkjet printing system. The driver may include logic including a processor, memory coupled to the logic, and a fire pulse generator circuit coupled to the logic. The fire pulse generator may include a connector to facilitate coupling the driver to a print head. The fire pulse generator circuit may also include a fixed current source circuit adapted to generate a fire pulse with a constant slew rate that facilitates easy adjustment of ink drop size. The logic is adapted to receive an image and to convert the image to an image data file. The image data file is adapted to be used by the driver to trigger the print head to deposit ink into pixel wells on a substrate as the substrate is moved in a print direction. Numerous other aspects are disclosed.
摘要翻译：本发明提供了用于控制喷墨打印系统的方法，系统和驱动程序。驱动器可以包括逻辑，其包括处理器，耦合到逻辑的存储器和耦合到逻辑的触发脉冲发生器电路。火脉冲发生器可以包括用于便于将驱动器连接到打印头的连接器。火脉冲发生器电路还可以包括固定电流源电路，其适于产生具有恒定压摆率的发射脉冲，其有利于容易地调节墨滴尺寸。该逻辑适于接收图像并将图像转换为图像数据文件。图像数据文件适于由驱动器使用，以在基板沿着打印方向移动时触发打印头将墨水沉积在基板上的像素孔中。公开了许多其他方面。

77. 发明授权

US07611217B2 Methods and systems for inkjet drop positioning 失效
标题翻译：喷墨定位方法和系统
公开(公告)号：US07611217B2
公开(公告)日：2009-11-03
申请号：US11238636
申请日：2005-09-29
申请人： Bassam Shamoun , Janusz Jozwiak , Eugene Mirro , Quanyuan Shang , Shinichi Kurita , John M. White
发明人： Bassam Shamoun , Janusz Jozwiak , Eugene Mirro , Quanyuan Shang , Shinichi Kurita , John M. White
IPC分类号： B41J29/38
CPC分类号： B41J29/393
摘要： Methods and apparatus for inkjet inkjet drop positioning are provided. A first method includes determining an intended deposition location of an ink drop on a substrate, depositing the ink drop on the substrate using an inkjet printing system, detecting a deposited location of the deposited ink drop on the substrate, comparing the deposited location to the intended location, determining a difference between the deposited location and the intended location, and compensating for the difference between the deposited location and the intended location by adjusting a parameter of an inkjet printing system. Numerous other aspects are provided.
摘要翻译：提供喷墨喷墨滴定位的方法和装置。第一种方法包括确定墨滴在基底上的预期沉积位置，使用喷墨印刷系统将墨滴沉积在基底上，检测沉积的墨滴在基底上的沉积位置，将沉积位置与预期的位置进行比较确定存放位置与预期位置之间的差异，以及通过调整喷墨打印系统的参数来补偿存放位置与预期位置之间的差异。提供了许多其他方面。

78. 发明申请

US20090267975A1 METHODS AND APPARATUS FOR ALIGNING PRINT HEADS 审中-公开
标题翻译：用于校准打印头的方法和装置
公开(公告)号：US20090267975A1
公开(公告)日：2009-10-29
申请号：US12498322
申请日：2009-07-06
申请人： John M. White , Fan Cheung Sze , Quanyuan Shang , Shinichi Kurita , Hongbin Ji , Janusz Jozwiak , Inchen Huang , Emanual Beer
发明人： John M. White , Fan Cheung Sze , Quanyuan Shang , Shinichi Kurita , Hongbin Ji , Janusz Jozwiak , Inchen Huang , Emanual Beer
IPC分类号： B41J3/00 , B41J29/393 , B41J23/00
CPC分类号： B41J3/407 , B41J2/04505 , B41J2/04541 , B41J2/04581 , B41J2/04588 , B41J2/0459 , B41J2/04593 , B41J2/125 , B41J3/28 , B41J3/543 , B41J25/001 , B41J25/003 , B41J25/005 , B41J29/15 , B41J29/393
摘要： In a first aspect, a system is provided. The system includes (1) a stage adapted to move a substrate relative to print heads during printing; (2) at least one print head suspended from a support above the stage and adapted to be moveable in a plane above the stage; (3) a controller operable to rotate the print head about a center of the print head; and (4) an imaging system adapted to capture an image of the print head and to determine a center point of the print head based upon images of the print head captured as the print head is rotated. Numerous other aspects are provided.
摘要翻译：在第一方面，提供一种系统。该系统包括（1）适于在印刷期间相对于打印头移动基板的台阶; （2）至少一个打印头，其从所述平台上方的支撑件悬挂并适于在所述平台上方的平面中移动; （3）可操作以使打印头围绕打印头的中心旋转的控制器; 以及（4）成像系统，其适于捕获所述打印头的图像，并且基于当所述打印头旋转时捕获的打印头的图像来确定所述打印头的中心点。提供了许多其他方面。

79. 发明授权

US07589031B2 Method of avoiding haze formation on surfaces of silicon-containing PECVD-deposited thin films 有权
标题翻译：在含硅PECVD沉积薄膜的表面上避免雾霾形成的方法
公开(公告)号：US07589031B2
公开(公告)日：2009-09-15
申请号：US11607702
申请日：2006-12-01
申请人： Suhail Anwar , Chung-Hee Park , Beom Soo Park , Han Byoul Kim , Soo Young Choi , John M. White
发明人： Suhail Anwar , Chung-Hee Park , Beom Soo Park , Han Byoul Kim , Soo Young Choi , John M. White
IPC分类号： H01L21/31
CPC分类号： H01L21/02274 , C23C16/345 , H01L21/0217 , H01L21/02532 , H01L21/0262 , H01L21/3185 , H01L21/67161 , H01L21/67207 , H01L21/67236 , H01L29/66765 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： A method of PECVD deposition of silicon-containing films has been discovered and further developed. The method is particularly useful when the films are deposited on substrates having surface areas which are larger than 25,000 cm2. The method prevents the deposition of partially reacted silicon-containing species which form a powdery material or haze (contaminant compound) on the substrate surface. The contaminant compounds are avoided by assuring that the power applied to form a plasma in the PECVD process is maintained, at least at a minimal level, until reactive silicon-containing precursor gases present above the surface of the substrate have been reacted or evacuated from the plasma processing area.
摘要翻译：已经发现并进一步开发了含硅膜的PECVD沉积方法。当膜沉积在具有大于25,000cm 2的表面积的基底上时，该方法是特别有用的。该方法防止在基材表面上沉积形成粉末状物质或雾度（污染物化合物）的部分反应的含硅物质。通过确保在PECVD工艺中施加以形成等离子体的功率至少保持最小水平，直到存在于衬底表面上方的反应性含硅前体气体已经从等离子处理区。

80. 发明授权

US07588957B2 CVD process gas flow, pumping and/or boosting 失效
标题翻译： CVD工艺气体流动，泵送和/或增压
公开(公告)号：US07588957B2
公开(公告)日：2009-09-15
申请号：US11873617
申请日：2007-10-17
申请人： John M. White
发明人： John M. White
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , C23C16/5096 , C23C16/54 , Y02E10/547 , Y02P70/521
摘要： The present invention generally comprises a method and apparatus for supplemental pumping, gas feed, and/or RF current for a process. When depositing amorphous silicon, the amount of process gases, RF current, and vacuum may be less than the amount of process gases, RF current, and vacuum necessary to deposit microcrystalline silicon. When a single chamber is used to deposit both amorphous and microcrystalline silicon, coupling a supplemental power supply, a supplemental gas source, and a supplemental vacuum pump to the chamber may be beneficial. The supplemental power supply, vacuum pump, and gas source, may be coupled with the chamber when the microcrystalline silicon is deposited and uncoupled when amorphous silicon is deposited. In a cluster tool arrangement, the supplemental power supply, vacuum pump, and gas source may serve multiple chambers that each deposit both amorphous and microcrystalline silicon.
摘要翻译：本发明通常包括用于过程的补充泵送，气体进料和/或RF电流的方法和装置。当沉积非晶硅时，工艺气体的量，RF电流和真空度可以小于沉积微晶硅所需的工艺气体，RF电流和真空的量。当使用单个室来沉积非晶硅和微晶硅时，将辅助电源，补充气体源和补充真空泵耦合到腔室可能是有益的。补充电源，真空泵和气源可以在微晶硅沉积时与腔室耦合，当非晶硅沉积时，该电解质分离。在集群工具装置中，补充电源，真空泵和气体源可以服务于多个室，每个室均沉积非晶硅和微晶硅。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式