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71. 发明专利

JPH10135564A SEMICONDUCTOR PHOTOWAVEGUIDE STRUCTURE, PHOTODEVICE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JPH10135564A
公开(公告)日：1998-05-22
申请号：JP28956896
申请日：1996-10-31
申请人： FURUKAWA ELECTRIC CO LTD
发明人： IWAI NORIHIRO , NISHIKATA KAZUAKI , KASUKAWA AKIHIKO
IPC分类号： H01S5/00 , G02B6/12 , G02B6/122 , G02B6/13 , G02B6/30 , H01S5/042 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To provide a photowaveguide structure capable of manufacturing in simple steps and easy width control of photowaveguide as well as semiconductor photodevice using the structure. SOLUTION: An Al (Ga)As core layer 13 which the film thickness is minimized on the central part in the film thickness direction slowly increasing toward the outside of the film to be maximized on the surface and on the back parts of the film is formed on a GaAs substrate 11, and, by partially oxidizing this core layer 13 in steam, a photo-transmittable peripheral oxidized region 16 and a central non-oxidized region 17 to be a not-transmittable photowaveguide are formed. Besides, by specifying the Al composition to be 0.97 on the central part of the film and to be 1 on the outside part of the film, the oxidization ratio of 1:10 can be secured while, by specifying the photowaveguide structure to make tapered ridge in the optic axial direction, an almost round photowaveguide 16 can be formed on the taper front part so as to improve the photocoupling efficiency with an optical fiber. Finally, by forming a semiconductor element on the common substrate 11 using growing method, etc., the semiconductor photodevice in high coupling efficiency with the optical fiber causing the least carrier leakage can be manufactured.

72. 发明专利

JPH09214063A SEMICONDUCTOR LASER AND ITS FABRICATION METHOD 失效
公开(公告)号：JPH09214063A
公开(公告)日：1997-08-15
申请号：JP4026396
申请日：1996-02-05
申请人： FURUKAWA ELECTRIC CO LTD
发明人： IWAI NORIHIRO , KASUKAWA AKIHIKO
IPC分类号： H01S3/093 , H01S5/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser and its fabrication method wherein a stepped part is formed on each substrate surface for supporting each of an active region and a mode field region, both substrate surfaces are in a (100) plane, and a slant surface connecting the substrate surfaces forms each of different conductivity type slope surfaces at least a specific angle in the direction (111) A from the substrate surface supporting the active region. SOLUTION: A surface of a p-InP substrate 11 that uses a lattice surface (100) as the substrate surface is etched to form a recessed part, a side wall of which is formed into a slant 11C forming a (311) A surface being a crystal surface parallel to an orientation flat. The slant 11C is constructed at this time to have an off angle of 10 degree or more with respect to the lattice surface (100). A pair of strip shaped SiO2 films are formed ON the first substrate surface 11A. This is used as a mask for selective growth. A semiconductor layer composed of a cladding layer 12, a quantum well active layer 13, and a cladding layer is formed on an exposed surface where the strip-shaped SiO2 films are not formed. At this time, Zn and Se are simultaneosuly doped. Hereby, the cladding layer is formed only on the slope, and can be formed simultaneously.

73. 发明专利

JPH09167877A SEMICONDUCTOR LASER DEVICE AND ITS FABRICATION 失效
公开(公告)号：JPH09167877A
公开(公告)日：1997-06-24
申请号：JP32696295
申请日：1995-12-15
申请人： FURUKAWA ELECTRIC CO LTD
发明人： IWAI NORIHIRO , KASUKAWA AKIHIKO
IPC分类号： H01S5/00 , H01S5/02 , H01S5/06 , H01S5/223 , H01S5/32 , H01S5/323 , H01S3/18 , H01S3/103
摘要： PROBLEM TO BE SOLVED: To improve the temperature characteristics by setting the band gap of p-side clad layer wider than that of a specific active layer thereby retarding overflow of charges from the active layer to the clad layer. SOLUTION: An n-side clad layer 12 of n-type InP, an active layer 13 of GRIN-SCH-MQW, and an adhesive layer 14 of InP or InGaP are formed on an n-type InP substrate 11. A p-side clad layer 18 is then applied onto the adhesive layer 14 in the atmosphere. In this regard, the band gap of p-side clad layer 18 is set larger by 1.35eV than that of the active layer 13. This structure eliminates overflow of charges from the active layer 13 to the p-side clad layer 18 and improves the temperature characteristics.

74. 发明专利

JPH09129979A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH09129979A
公开(公告)日：1997-05-16
申请号：JP28695795
申请日：1995-11-06
申请人： FURUKAWA ELECTRIC CO LTD
发明人： IWAI NORIHIRO , KASUKAWA AKIHIKO
IPC分类号： H01S3/139 , H01S5/00 , H01S5/068 , H01S3/18 , H01S3/133
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor laser device the oscillation wavelength of which does not change even when the temperature of an active layer fluctuates by installing a reflecting mirror the reflectivity of which drops as the temperature rises to at least one of the end faces of a resonator. SOLUTION: In a semiconductor laser device, a reflecting mirror the reflectivity of which drops as the temperature rises is installed to at least one of the end faces of a resonator. The reflecting mirror having such a characteristic is an interference type wavelength filter, in principle. In the filter, high-refractive index layers 211, 213, 215, and 217 and low-refractive index layers 212, 214, 216, and 218 are laminated upon another in this order and the thicknesses of the high-and low refractive index layers are respectively set at λ/4n1 and λ/4n2 (where, λ, n1 , and n2 respectively represent the oscillation wavelength, refractive index of the high-refractive index layers, and refractive index of the low- refractive index layers). However, only the thickness of the layer 214 which is contained in the laminated body of the low-refractive index layers is set at λ/2n2 .

75. 发明专利

JPH0951145A SURFACE EMITTING LASER DEVICE 失效
公开(公告)号：JPH0951145A
公开(公告)日：1997-02-18
申请号：JP22113495
申请日：1995-08-07
申请人： FURUKAWA ELECTRIC CO LTD
发明人： IWAI NORIHIRO , KASUKAWA AKIHIKO
IPC分类号： H01S3/08 , H01S5/00 , H01S5/183 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To decrease the threshold current value of a verticalresonance type surface emitting laser device. SOLUTION: The optical reflective indexes of optical waveguide layers 13 and 15 holding active layer 14 of a surface emitting laser device are formed larger than the reflective index of an embedded layer 16 surrounding the peripheries of the optical waveguides 13 and 15. Laser light is efficiently confined in an optical resonance part sandwiched by a pair of reflecting films 19 and 20, and the oscillating efficiency is enhanced. Thus, the laser oscillation by a lower threshold current value can be performed. When the optical waveguide layer is formed in the DBR mirror, the peripheral part of the DBR mirror is made to be the mixed crystal part, the optical reflective index is decreased and the non-crystal-mixed part having a high optical reflective index at the central part is constituted as the optical waveguide part.

76. 发明专利

JPH07302953A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH07302953A
公开(公告)日：1995-11-14
申请号：JP11768194
申请日：1994-05-06
申请人： FURUKAWA ELECTRIC CO LTD
发明人： IWAI NORIHIRO , KASUKAWA AKIHIKO
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To provide a semiconductor laser element which satisfactorily radiates heat generated in an active layer and exhibits improved operability. CONSTITUTION:A semiconductor laser element has multilayer reflective films 12 and 13 for reflecting a laser beam. Each of the multilayer reflective films 12 and 13 is constituted by alternately stacking two types of layers having different refractive indexes. In the semiconductor laser element in which the optical thickness of the two types of layers is lambda/4 (lambda: laser oscillation wavelength), one of the two types of layers constituting the multilayer reflective films 12 and 13 is made of AlN, GaP or AlP.

77. 发明专利

JPH07106621A SEMICONDUCTOR LIGHT RECEIVING ELEMENT 失效
公开(公告)号：JPH07106621A
公开(公告)日：1995-04-21
申请号：JP24548493
申请日：1993-09-30
申请人： FURUKAWA ELECTRIC CO LTD
发明人： IWAI NORIHIRO , OKUBO NORIO , IJICHI TETSURO
IPC分类号： H01L31/10
摘要： PURPOSE:To obtain a semiconductor light receiving element exhibiting excellent absorption characteristics for a specific laser light, while realizing monolithic structure with an electronic device easily, by laminating an InGaAs quantum well layer having compressive strain and a GaAsP or InGaP barrier layer having tensile strain alternately to form a light absorption layer. CONSTITUTION:A buffer layer 2, a strained quantum well light absorption layer 3, and a window layer 4 are laminated on an n-GaAs substrate 1. The strained quantum well light absorption layer comprises an alternate laminate of 100 layers of In0.28Ga0.72As well layer 3a and GaAs0.44P0.5 barrier layer 3b. The In0.28Ga0.72As well layer 3a is epitaxially grown on the GaAs substrate as a crystal having grating constant higher than that of GaAs. The well layer 3a is applied with compressive strain of 0.2% thus setting the center of absorption band of light receiving element at 1mum or thereabout. On the other hand, the GaAs0.44P0.5 barrier layer 3b is grown epitaxially on the GaAs substrate as a crystal having grating constant lower than that of GaAs and applied with tensile strain of 0.2%.

78. 发明专利

JPH0774427A SEMICONDUCTOR LASER ELEMENT AND LASER MODULE 失效
公开(公告)号：JPH0774427A
公开(公告)日：1995-03-17
申请号：JP16060594
申请日：1994-06-20
申请人： FURUKAWA ELECTRIC CO LTD
发明人： KASUKAWA AKIHIKO , IWAI NORIHIRO
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To provide a semiconductor laser element which can prevent increase of laser oscillation threshold current caused by temperature rise and lowering of quantum efficiency and to provide a compact laser module of good temperature characteristic at a low cost. CONSTITUTION:As for a semiconductor laser element 21, a reflection mirror 23 in one edge face or both edge faces of a resonator 22 has reflection rate which increases together with a wavelength within a wavelength range (2lambda1 to 2lambda2) which changes according to a use temperature of the element 21. As for a laser module, it is mainly constituted of such a semiconductor laser element 21. As for the semiconductor laser element 21, its temperature characteristic (temperature dependency) is improved since resonator loss lowers according to temperature rise. The laser module is also similar to it.

79. 发明专利

JPH06196824A MANUFACTURE OF SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH06196824A
公开(公告)日：1994-07-15
申请号：JP35813292
申请日：1992-12-24
申请人： FURUKAWA ELECTRIC CO LTD
发明人： IWAI NORIHIRO , HIRATANI YUJI
IPC分类号： H01L21/52 , H01S5/00 , H01S3/18
摘要： PURPOSE:To provide a manufacture of a semiconductor element, the lifetime of which is lengthened, by simplifying a process, improving production yield and enhancing heat-dissipating properties. CONSTITUTION:An electrode 12 is formed onto a surface on the epitaxial side of an epitaxial wafer 11 for a semiconductor element, an insulating film 18 pattern is shaped onto the surface of the electrode 12, gold-plated layer pads 14 thicker than an insulating film 18 are formed onto the surface of the electrode 12, and the epitaxial wafer 11 is die-bonded on a heat sink 15 mounted on a stem 16 on the surface on the epitaxial side.

80. 发明专利

JPH05327124A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH05327124A
公开(公告)日：1993-12-10
申请号：JP15429892
申请日：1992-05-20
申请人： FURUKAWA ELECTRIC CO LTD
发明人： IWAI NORIHIRO , KASUKAWA AKIHIKO
IPC分类号： H01S5/00 , H01S5/227 , H01S3/18
摘要： PURPOSE:To obtain a semiconductor laser element using a P-type substrate which can grow the whole process by an MOCVD method. CONSTITUTION:In a semiconductor laser element having a stripe type mesa constituted of a laminate in which a lower light constriction layer 19a, an active layer 13, an upper light constriction layer 19b and a clad layer 14 are laminated in order on a P-type semiconductor substrate 11, semiinsulative semiconductor layers 16 are buried in both sides of the mesa. The bottom of the mesa is arranged between the upper surface of the upper light constriction layer 19b and the lower surface of the lower light constriction layer 19a.

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