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71. 发明申请

US20110170342A1 ELECTRONIC DEVICES UTILIZING SPIN TORQUE TRANSFER TO FLIP MAGNETIC ORIENTATION 有权
标题翻译：使用旋转扭矩的电子设备转移到浮动磁场定向
公开(公告)号：US20110170342A1
公开(公告)日：2011-07-14
申请号：US13070542
申请日：2011-03-24
申请人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
发明人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/3254 , H01F10/3272 , H01F10/3286 , Y10S977/935
摘要： Electronic devices that include (i) a magnetization controlling structure; (ii) a tunnel barrier structure; and (iii) a magnetization controllable structure including: a first polarizing layer; and a first stabilizing layer, wherein the tunnel barrier structure is between the magnetization controlling structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the tunnel barrier structure, wherein the electronic device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the electronic device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization in order to obtain one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current.
摘要翻译：电子设备，其包括（i）磁化控制结构; （ii）隧道屏障结构; 和（iii）可磁化控制结构，包括：第一偏振层; 以及第一稳定层，其中所述隧道势垒结构在所述磁化控制结构和所述磁化控制结构之间，并且所述第一偏振层位于所述第一稳定层和所述隧道势垒结构之间，其中所述电子器件具有两个稳定的整体磁性构造，并且其中施加到所述电子器件的第一单极电流将导致所述磁化控制结构的取向反转其取向，并且施加到所述电子器件的第二单极电流将导致所述磁化可控结构切换其磁化，以获得两个稳定的整体磁性配置，其中第二单极性电流具有小于第一单极电流的幅度。

72. 发明申请

US20110169114A1 ELECTRONIC DEVICES UTILIZING SPIN TORQUE TRANSFER TO FLIP MAGNETIC ORIENTATION 有权
公开(公告)号：US20110169114A1
公开(公告)日：2011-07-14
申请号：US13070540
申请日：2011-03-24
申请人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
发明人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
IPC分类号： H01L43/10 , H01L43/12
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/3254 , H01F10/3272 , H01F10/3286 , Y10S977/935
摘要： Electronic devices that include (i) a magnetization controlling structure; (ii) a tunnel barrier structure; and (iii) a magnetization controllable structure including: a first polarizing layer; and a first stabilizing layer, wherein the tunnel barrier structure is between the magnetization controlling structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the tunnel barrier structure, wherein the electronic device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the electronic device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization in order to obtain one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current.

73. 发明申请

US20110128778A1 Predictive Thermal Preconditioning and Timing Control for Non-Volatile Memory Cells 有权
标题翻译：非易失性记忆体的预测热预处理和时序控制
公开(公告)号：US20110128778A1
公开(公告)日：2011-06-02
申请号：US13016390
申请日：2011-01-28
申请人： Yiran Chen , Hai Li , Harry Hongyue Liu , Dimitar V. Dimitrov , Alan Xuguang Wang , Xiaobin Wang
发明人： Yiran Chen , Hai Li , Harry Hongyue Liu , Dimitar V. Dimitrov , Alan Xuguang Wang , Xiaobin Wang
IPC分类号： G11C11/02 , G11C7/00
CPC分类号： G11C11/1675 , G11C11/1659
摘要： A method and apparatus for using thermal preconditioning to write data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a logical state is written to an unconditioned non-volatile first memory cell associated with a first block address. Thermal preconditioning is concurrently applied to a non-volatile second memory cell associated with a second block address selected in response to the first block address.
摘要翻译：一种使用热预处理来将数据写入诸如自旋转矩传递随机存取存储器（STRAM）存储器单元的非易失性存储单元的方法和装置。在一些实施例中，将逻辑状态写入与第一块地址相关联的无条件非易失性第一存储器单元。热预处理同时应用于与响应于第一块地址选择的第二块地址相关联的非易失性第二存储器单元。

74. 发明授权

US07944742B2 Diode assisted switching spin-transfer torque memory unit 有权
标题翻译：二极管辅助开关自旋转移转矩存储单元
公开(公告)号：US07944742B2
公开(公告)日：2011-05-17
申请号：US12861932
申请日：2010-08-24
申请人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
发明人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.
摘要翻译：存储器阵列包括位线和源极线的交叉点阵列。存储器设置在交叉点阵列的交叉点处。存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

75. 发明授权

US07940551B2 STRAM with electronically reflective insulative spacer 有权
标题翻译： STRAM带电子反射绝缘垫片
公开(公告)号：US07940551B2
公开(公告)日：2011-05-10
申请号：US12239887
申请日：2008-09-29
申请人： Yuankai Zheng , Dimitar V. Dimitrov , Wei Tian , Dexin Wang , Zheng Gao , Xiaobin Wang
发明人： Yuankai Zheng , Dimitar V. Dimitrov , Wei Tian , Dexin Wang , Zheng Gao , Xiaobin Wang
IPC分类号： G11C11/16
CPC分类号： G11C11/161
摘要： Spin-transfer torque memory having a specular insulative spacer is disclosed. The spin-transfer torque memory unit includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, an electrode layer, and an electrically insulating and electronically reflective layer separating the electrode layer and the free magnetic layer.
摘要翻译：公开了具有镜面绝缘间隔物的自旋转移力矩存储器。自旋转移转矩存储单元包括自由磁性层，参考磁性层，将自由磁性层与参考磁性层分离的电绝缘和非磁性隧道势垒层，电极层以及电绝缘和电子反射层分离电极层和自由磁性层。

76. 发明授权

US07916528B2 Predictive thermal preconditioning and timing control for non-volatile memory cells 有权
标题翻译：非易失性存储单元的预测性热预处理和时序控制
公开(公告)号：US07916528B2
公开(公告)日：2011-03-29
申请号：US12414452
申请日：2009-03-30
申请人： Yiran Chen , Hai Li , Harry Hongyue Liu , Dimitar V. Dimitrov , Alan Xuguang Wang , Xiaobin Wang
发明人： Yiran Chen , Hai Li , Harry Hongyue Liu , Dimitar V. Dimitrov , Alan Xuguang Wang , Xiaobin Wang
IPC分类号： G11C11/14 , G11C8/00 , G11C7/00
CPC分类号： G11C11/1675 , G11C11/1659
摘要： A method and apparatus for using thermal preconditioning to write data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a logical state is written to an unconditioned non-volatile first memory cell associated with a first block address. Thermal preconditioning is concurrently applied to a non-volatile second memory cell associated with a second block address selected in response to the first block address.
摘要翻译：一种使用热预处理来将数据写入诸如自旋转矩传递随机存取存储器（STRAM）存储器单元的非易失性存储单元的方法和装置。在一些实施例中，将逻辑状态写入与第一块地址相关联的无条件非易失性第一存储器单元。热预处理同时应用于与响应于第一块地址选择的第二块地址相关联的非易失性第二存储器单元。

77. 发明申请

US20110049658A1 MAGNETIC TUNNEL JUNCTION WITH ELECTRONICALLY REFLECTIVE INSULATIVE SPACER 有权
标题翻译：具有电子反射绝缘间隔的磁性隧道结
公开(公告)号：US20110049658A1
公开(公告)日：2011-03-03
申请号：US12943979
申请日：2010-11-11
申请人： Yuankai Zheng , Dimitar V. Dimitrov , Wei Tian , Dexin Wang , Zheng Gao , Xiaobin Wang
发明人： Yuankai Zheng , Dimitar V. Dimitrov , Wei Tian , Dexin Wang , Zheng Gao , Xiaobin Wang
IPC分类号： H01L27/22
CPC分类号： G11C11/161
摘要： Magnetic tunnel junctions having a specular insulative spacer are disclosed. The magnetic tunnel junction includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, and an electrically insulating and electronically reflective layer positioned to reflect at least a portion of electrons back into the free magnetic layer.
摘要翻译：公开了具有镜面绝缘间隔物的磁隧道结。磁性隧道结包括自由磁性层，参考磁性层，将自由磁性层与参考磁性层分离的电绝缘和非磁性隧道势垒层，以及电绝缘和电子反射层，其被定位成反射至少一个部分电子返回自由磁性层。

78. 发明授权

US07894250B2 Stuck-at defect condition repair for a non-volatile memory cell 有权
公开(公告)号：US07894250B2
公开(公告)日：2011-02-22
申请号：US12405918
申请日：2009-03-17
申请人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
发明人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
IPC分类号： G11C11/00
CPC分类号： G11C29/50 , G11C11/1659 , G11C11/1675 , G11C11/1677 , G11C11/1695 , G11C11/1697
摘要： A method and apparatus for repairing a stuck-at defect condition in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a resistive sense element has a magnetic tunneling junction (MTJ) and a repair plane located adjacent to the resistive sense element. The repair plane injects a magnetic field in the MTJ to repair a stuck-at defect condition.

79. 发明申请

US20110026321A1 MAGNETIC MEMORY WITH POROUS NON-CONDUCTIVE CURRENT CONFINEMENT LAYER 有权
标题翻译：具有多个非导电电流限制层的磁记忆
公开(公告)号：US20110026321A1
公开(公告)日：2011-02-03
申请号：US12904254
申请日：2010-10-14
申请人： Michael Xuefei Tang , Ming Sun , Dimitar V. Dimitrov , Patrick Ryan
发明人： Michael Xuefei Tang , Ming Sun , Dimitar V. Dimitrov , Patrick Ryan
IPC分类号： G11C11/14 , H01L21/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3286 , H01F10/329
摘要： A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.
摘要翻译：具有铁磁性钉扎层，铁磁性自由层，其间的非磁性间隔层的磁性元件以及位于自由层和被钉扎层之间的多孔非导电电流限制层。电流限制层在自由层和非磁性间隔层之间或被钉扎层和非磁性间隔层之间形成界面。

80. 发明申请

US20110019466A1 Stuck-At Defect Condition Repair for a Non-Volatile Memory Cell 失效
标题翻译：阻止非易失性存储器单元的缺陷条件修复
公开(公告)号：US20110019466A1
公开(公告)日：2011-01-27
申请号：US12900303
申请日：2010-10-07
申请人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
发明人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
IPC分类号： G11C11/00 , G11C29/00
CPC分类号： G11C29/50 , G11C11/1659 , G11C11/1675 , G11C11/1677 , G11C11/1695 , G11C11/1697
摘要： A method and apparatus for repairing a stuck-at defect condition in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a resistive sense element has a magnetic tunneling junction (MTJ) and a repair plane located adjacent to the resistive sense element. The repair plane injects a magnetic field in the MTJ to repair a stuck-at defect condition.
摘要翻译：一种用于修复诸如自旋转矩传递随机存取存储器（STRAM）的非易失性存储单元中的卡入缺陷状况的方法和装置。在一些实施例中，电阻感测元件具有磁性隧道结（MTJ）和位于电阻感测元件附近的修复平面。修复平面在MTJ中注入磁场以修复卡住的缺陷状况。

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