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    • 72. 发明授权
    • System yield optimization using the results of integrated circuit chip performance path testing
    • 系统产量优化采用集成电路芯片性能路径测试的结果
    • US08539429B1
    • 2013-09-17
    • US13572954
    • 2012-08-13
    • Jeanne P. BickfordPeter A. HabitzVikram Iyengar
    • Jeanne P. BickfordPeter A. HabitzVikram Iyengar
    • G06F17/50
    • G01R31/31718G01R31/31725
    • Disclosed are embodiments of a method, system and computer program for optimizing system yield based on the results of post-manufacture integrated circuit (IC) chip performance path testing. In these embodiments, a correlation is made between IC chip performance measurements, which were acquired from IC chips specifically during post-manufacture (i.e., wafer-level or module-level) performance path testing, and system performance measurements, which were acquired from systems that incorporate those IC chips previously subjected to performance path testing. Based on this correlation and a target system performance value, a post-manufacture (i.e., wafer-level or module-level) chip dispositioning rule can be adjusted to optimize system yield (i.e., to ensure that subsequently manufactured systems which incorporate the IC chip meet the target system performance value). Optionally, simulation of such processing can be performed during design of the IC chip for incorporation into the system in order establish the initial chip dispositioning rule in the first place.
    • 公开了一种基于后制造集成电路(IC)芯片性能路径测试的结果来优化系统产量的方法,系统和计算机程序的实施例。 在这些实施例中,在IC芯片特性在后期制造(即晶片级或模块级)性能路径测试中获得的IC芯片性能测量和从系统获取的系统性能测量之间进行相关 其中包含先前经过性能路径测试的那些IC芯片。 基于这种相关性和目标系统性能值,可以调整后制造(即晶片级或模块级)芯片布置规则以优化系统产量(即,确保随后制造的并入IC芯片的系统 满足目标系统的性能价值)。 可选地,可以在用于结合到系统中的IC芯片的设计期间执行这种处理的模拟,以便首先建立初始的芯片布置规则。
    • 73. 发明申请
    • INTEGRATED CIRCUIT DESIGN SIMULATION MATRIX INTERPOLATION
    • 集成电路设计仿真矩阵插值
    • US20130085726A1
    • 2013-04-04
    • US13251517
    • 2011-10-03
    • Peter A. HabitzAmol A. Joshi
    • Peter A. HabitzAmol A. Joshi
    • G06F17/50
    • G06F17/5036
    • Methods and systems perform a simulation on an integrated circuit design by applying a first value to a first variable and a second value to a second variable of the simulation to produce a first matrix corner simulation value. The methods and systems repeat the simulation using different values for the first and said second variables to produce a second matrix corner simulation value, a third matrix corner simulation value, and a fourth matrix corner simulation value. The methods and systems create a matrix, and the matrix has the first matrix corner simulation value, the second matrix corner simulation value, the third matrix corner simulation value, and the fourth matrix corner simulation value. The methods and systems interpolate all remaining values within the matrix based upon existing simulation values within the matrix.
    • 方法和系统通过将第一值应用于第一变量和第二值到模拟的第二变量来对集成电路设计进行仿真以产生第一矩阵角模拟值。 方法和系统使用不同的值对第一和第二变量重复模拟,以产生第二矩阵角模拟值,第三矩阵角模拟值和第四矩阵角模拟值。 方法和系统创建矩阵,矩阵具有第一矩阵角模拟值,第二矩阵角模拟值,第三矩阵角模拟值和第四矩阵角模拟值。 方法和系统基于矩阵内的现有模拟值来内插矩阵内的所有剩余值。
    • 76. 发明授权
    • Kerf circuit for modeling of BEOL capacitances
    • 用于BEOL电容建模的Kerf电路
    • US06624651B1
    • 2003-09-23
    • US09684849
    • 2000-10-06
    • David M. FriedPeter A. Habitz
    • David M. FriedPeter A. Habitz
    • G01R3126
    • G01R31/006
    • A kerf circuit for modeling of Back End Of Line (BEOL) capacitances is disclosed. The kerf circuit contains a clock circuit connected to a number of capacitance testing circuits. Each capacitance testing circuit acts a “bay” that can be configured to test one particular capacitance. The clock circuit allows the capacitance testing circuits to charge and discharge the capacitive structures being tested. By having a number of different capacitance testing circuits, capacitances of many different structures may be tested at one time. This is particularly true if the kerf circuit is repeated several or many times, with each different kerf circuit containing different capacitive testing circuits that themselves contain different capacitive structures. The kerf circuit interfaces to testing equipment through pads. The pads connect to each capacitive testing circuit and allow capacitance measurements to be performed by measuring current.
    • 公开了一种用于线路后端(BEOL)电容建模的切口电路。 切口电路包含连接到多个电容测试电路的时钟电路。 每个电容测试电路都作为一个“间隔”,可以配置为测试一个特定的电容。 时钟电路允许电容测试电路对被测试的电容结构进行充电和放电。 通过具有多个不同的电容测试电路,可以一次测试许多不同结构的电容。 如果切割电路重复数次或多次,则特别如此,每个不同的切屑回路包含不同的电容测试电路,它们本身包含不同的电容结构。 切口电路通过焊盘与测试设备接口。 焊盘连接到每个电容测试电路,并通过测量电流来进行电容测量。
    • 79. 发明授权
    • Method and apparatus for modeling capacitance in an integrated circuit
    • 用于对集成电路中的电容进行建模的方法和装置
    • US5761080A
    • 1998-06-02
    • US561647
    • 1995-11-22
    • William F. DeCampJohn J. Ellis-MonaghanPeter A. HabitzEdward W. Seibert
    • William F. DeCampJohn J. Ellis-MonaghanPeter A. HabitzEdward W. Seibert
    • G06F17/50
    • G06F17/5081Y10S706/921
    • According to the present embodiment, a method for calculating the parasitic capacitance in a semiconductor device is disclosed. According to the preferred method, a layout file containing the shapes of a semiconductor device is provided. The dimensions of the layout file are then adjusted to wafer dimensions so as reflect actual production devices. The shapes of the layout file are then partitioned into simpler shapes, typically abutted rectangles, called tiles. Each tile is then decomposed into overlap and fringe capacitance components, each component having a uniform capacitance environment with respect to its capacitance elements. The parasitic capacitance of the semiconductor device can thus be accurately computed, with an efficient use of resources. Additionally the preferred embodiment is easily adaptable to a wide range of technology types.
    • 根据本实施例,公开了一种用于计算半导体器件中的寄生电容的方法。 根据优选方法,提供了包含半导体器件的形状的布局文件。 然后将布局文件的尺寸调整为晶圆尺寸,以反映实际的生产设备。 然后,布局文件的形状被分割成更简单的形状,通常是称为块的邻接矩形。 然后,每个瓦片被分解成重叠和边缘电容分量,每个部件相对于其电容元件具有均匀的电容环境。 因此,可以有效利用资源来准确地计算半导体器件的寄生电容。 此外,优选实施例容易适应于广泛的技术类型。