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71. 发明申请

US20080197441A1 SEMICONDUCTOR COMPONENT WITH VERTICAL STRUCTURES HAVING A HIGH ASPECT RATIO AND METHOD 有权
标题翻译：具有高度比例和方法的垂直结构的半导体元件
公开(公告)号：US20080197441A1
公开(公告)日：2008-08-21
申请号：US12021736
申请日：2008-01-29
申请人： Anton Mauder , Helmut Strack , Armin Willmeroth , Hans-Joachim Schulze
发明人： Anton Mauder , Helmut Strack , Armin Willmeroth , Hans-Joachim Schulze
IPC分类号： H01L23/58 , H01L21/762
CPC分类号： H01L21/76224 , H01L29/0653 , H01L29/0878 , H01L29/161 , H01L29/165 , H01L29/407 , H01L29/66734 , H01L29/7803 , H01L29/7804 , H01L29/7806 , H01L29/7813 , H01L29/7831
摘要： A semiconductor component with vertical structures having a high aspect ratio and method. In one embodiment, a drift zone is arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone in a first direction. A dielectric layer is arranged between the drift zone and the drift control zone wherein the drift zone has a varying doping and/or a varying material composition at least in sections proceeding from the dielectric.
摘要翻译：具有高纵横比和垂直结构的半导体元件。在一个实施例中，漂移区布置在第一和第二组分区之间。漂移控制区在第一方向上布置成与漂移区相邻。电介质层布置在漂移区和漂移控制区之间，其中漂移区具有至少在从电介质进行的部分中的变化的掺杂和/或变化的材料组成。

72. 发明申请

US20070069257A1 Power semiconductor component having a field electrode and method for producing this component 有权
标题翻译：具有场电极的功率半导体部件及其制造方法
公开(公告)号：US20070069257A1
公开(公告)日：2007-03-29
申请号：US11521075
申请日：2006-09-14
申请人： Anton Mauder , Hans-Joachim Schulze
发明人： Anton Mauder , Hans-Joachim Schulze
IPC分类号： H01L29/76
CPC分类号： H01L29/7397 , H01L29/407 , H01L29/4236 , H01L29/872
摘要： A power semiconductor component includes a semiconductor body and a field electrode. The semiconductor body has a drift zone of a first conduction type and a further component defining a junction therebetween. The junction is configured to cause a space charge zone to propagate when a reverse voltage is applied to the junction. The field electrode is arranged adjacent to the drift zone, and is insulated from the semiconductor body by at least a dielectric layer. The dielectric layer has a first section and a second section, the first section arranged nearer to the junction and having a higher dielectric constant than the second section.
摘要翻译：功率半导体部件包括半导体本体和场电极。半导体本体具有第一导电类型的漂移区和限定它们之间的连接的另外的元件。结点被配置为当反向电压施加到结点时使空间电荷区传播。场电极被布置成与漂移区相邻，并且通过至少介电层与半导体本体绝缘。电介质层具有第一部分和第二部分，第一部分布置成更靠近结并且具有比第二部分更高的介电常数。

73. 发明申请

US20050133857A1 Power semiconductor component having a gentle turn-off behavior 有权
标题翻译：功率半导体元件具有温和的关断特性
公开(公告)号：US20050133857A1
公开(公告)日：2005-06-23
申请号：US11016963
申请日：2004-12-20
申请人： Anton Mauder , Hans-Joachim Schulze
发明人： Anton Mauder , Hans-Joachim Schulze
IPC分类号： H01L29/06 , H01L29/08 , H01L29/40 , H01L29/739 , H01L29/861 , H01L29/76
CPC分类号： H01L29/402 , H01L29/0834 , H01L29/7395 , H01L29/861
摘要： A vertical semiconductor component having a semiconductor body, which has an inner region and an edge region that is arranged between the inner region and an edge of the semiconductor body. At least one semiconductor junction between a first semiconductor zone of a first conduction type, said first semiconductor zone being arranged in the region of a first side of the semiconductor body in the inner region, and a second semiconductor zone of the second conduction type, said second semiconductor zone adjoining the first semiconductor zone in the vertical direction. A contiguous third semiconductor zone of the second conduction type, said third semiconductor zone being arranged at a distance from the first semiconductor zone in the second semiconductor zone in the vertical direction of the semiconductor body and extending as far as the edge region in the lateral direction of the semiconductor body, and the doping of the third semiconductor zone being selected in such a manner that it is completely depleted of charge carriers when a reverse voltage is applied to the pn junction.
摘要翻译：一种具有半导体本体的垂直半导体部件，其具有布置在半导体本体的内部区域和边缘之间的内部区域和边缘区域。在第一导电类型的第一半导体区域之间的至少一个半导体结，所述第一半导体区域布置在所述内部区域中的所述半导体本体的第一侧的区域中，以及所述第二导电类型的第二半导体区域，第二半导体区在垂直方向上邻接第一半导体区。第二导电类型的连续的第三半导体区域，所述第三半导体区域在半导体本体的垂直方向上与所述第二半导体区域中的所述第一半导体区域一定距离设置，并且在横向方向上延伸至所述边缘区域并且以这样的方式选择第三半导体区域的掺杂，使得当向pn结施加反向电压时，其完全耗尽电荷载流子。

74. 发明授权

US09219144B2 Semiconductor device including a trench in a semiconductor substrate and method of manufacturing a semiconductor device 有权
标题翻译：包括半导体衬底中的沟槽的半导体器件和制造半导体器件的方法
公开(公告)号：US09219144B2
公开(公告)日：2015-12-22
申请号：US13571455
申请日：2012-08-10
申请人： Anton Mauder , Reinhard Ploss , Hans-Joachim Schulze
发明人： Anton Mauder , Reinhard Ploss , Hans-Joachim Schulze
IPC分类号： H01L29/06 , H01L29/78 , H01L23/36 , H01L29/417 , H01L29/66 , H01L23/00 , H01L21/74 , H01L21/225 , H01L21/324 , H01L29/45 , H01L29/08
CPC分类号： H01L29/4236 , H01L21/2225 , H01L21/2251 , H01L21/2254 , H01L21/2255 , H01L21/2257 , H01L21/28079 , H01L21/30604 , H01L21/324 , H01L21/3247 , H01L21/743 , H01L23/36 , H01L24/05 , H01L29/0653 , H01L29/0657 , H01L29/0878 , H01L29/1079 , H01L29/167 , H01L29/41741 , H01L29/41766 , H01L29/456 , H01L29/4958 , H01L29/66333 , H01L29/66348 , H01L29/66666 , H01L29/66712 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7802 , H01L29/7813 , H01L29/7827 , H01L2224/05009 , H01L2224/05078 , H01L2224/0557 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor device includes a semiconductor substrate. A first trench extends into or through the semiconductor substrate from a first side. A semiconductor layer adjoins the semiconductor substrate at the first side. The semiconductor layer caps the first trench at the first side. The semiconductor device further includes a contact at a second side of the semiconductor substrate opposite to the first side.
摘要翻译：半导体器件包括半导体衬底。第一沟槽从第一侧延伸进入或穿过半导体衬底。半导体层在第一侧邻接半导体衬底。半导体层在第一侧覆盖第一沟槽。半导体器件还包括在与第一侧相对的半导体衬底的第二侧的接触。

75. 发明授权

US08809902B2 Power semiconductor diode, IGBT, and method for manufacturing thereof 有权
标题翻译：功率半导体二极管，IGBT及其制造方法
公开(公告)号：US08809902B2
公开(公告)日：2014-08-19
申请号：US13274411
申请日：2011-10-17
申请人： Holger Huesken , Anton Mauder , Hans-Joachim Schulze , Wolfgang Roesner
发明人： Holger Huesken , Anton Mauder , Hans-Joachim Schulze , Wolfgang Roesner
IPC分类号： H01L29/739
CPC分类号： H01L29/0688 , H01L29/0619 , H01L29/0692 , H01L29/0696 , H01L29/08 , H01L29/1608 , H01L29/161 , H01L29/2003 , H01L29/22 , H01L29/36 , H01L29/66128 , H01L29/66143 , H01L29/66325 , H01L29/7393 , H01L29/7395 , H01L29/861 , H01L29/8611 , H01L29/872
摘要： A power semiconductor diode is provided. The power semiconductor diode includes a semiconductor substrate having a first emitter region of a first conductivity type, a second emitter region of a second conductivity type, and a drift region of the first conductivity type arranged between the first emitter region and the second emitter region. The drift region forms a pn-junction with the second emitter region. A first emitter metallization is in contact with the first emitter region. The first emitter region includes a first doping region of the first conductivity type and a second doping region of the first conductivity type. The first doping region forms an ohmic contact with the first emitter metallization, and the second doping region forms a non-ohmic contact with the first emitter metallization. A second emitter metallization is in contact with the second emitter region.
摘要翻译：提供功率半导体二极管。功率半导体二极管包括具有第一导电类型的第一发射极区域，第二导电类型的第二发射极区域和布置在第一发射极区域和第二发射极区域之间的第一导电类型的漂移区域的半导体衬底。漂移区域与第二发射极区域形成pn结。第一发射极金属化与第一发射极区域接触。第一发射极区域包括第一导电类型的第一掺杂区域和第一导电类型的第二掺杂区域。第一掺杂区与第一发射极金属化形成欧姆接触，第二掺杂区与第一发射极金属化形成非欧姆接触。第二发射极金属化与第二发射极区域接触。

76. 发明授权

US08404562B2 Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core 有权
标题翻译：具有石墨芯的复合晶片的制造方法以及具有石墨芯的复合晶片
公开(公告)号：US08404562B2
公开(公告)日：2013-03-26
申请号：US12894344
申请日：2010-09-30
申请人： Rudolf Berger , Hermann Gruber , Wolfgang Lehnert , Guenther Ruhl , Raimund Foerg , Anton Mauder , Hans-Joachim Schulze
发明人： Rudolf Berger , Hermann Gruber , Wolfgang Lehnert , Guenther Ruhl , Raimund Foerg , Anton Mauder , Hans-Joachim Schulze
IPC分类号： H01L21/322 , H01L21/00 , H01L21/31
CPC分类号： H01L21/76251 , H01L21/02002 , H01L21/0237 , H01L21/0243 , H01L21/02527 , H01L21/02601 , H01L21/02628 , H01L21/7624 , H01L29/02 , H01L29/04 , H01L29/16 , H01L29/1608 , H01L29/161
摘要： According to an embodiment, a composite wafer includes a carrier substrate having a graphite core and a monocrystalline semiconductor layer attached to the carrier substrate.
摘要翻译：根据实施例，复合晶片包括具有石墨芯和附着到载体衬底的单晶半导体层的载体衬底。

77. 发明授权

US08367532B2 Semiconductor device and fabrication method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08367532B2
公开(公告)日：2013-02-05
申请号：US13558467
申请日：2012-07-26
申请人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schäffer , Franz-Josef Niedernostheide
发明人： Anton Mauder , Hans-Joachim Schulze , Frank Hille , Holger Schulze , Manfred Pfaffenlehner , Carsten Schäffer , Franz-Josef Niedernostheide
IPC分类号： H01L21/265
CPC分类号： H01L29/861 , H01L21/263 , H01L21/265 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/7395
摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.
摘要翻译：一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

78. 发明申请

US20130009227A1 SEMICONDUCTOR DEVICE WITH A DYNAMIC GATE-DRAIN CAPACITANCE 有权
标题翻译：具有动态栅极导通电容的半导体器件
公开(公告)号：US20130009227A1
公开(公告)日：2013-01-10
申请号：US13614479
申请日：2012-09-13
申请人： Anton Mauder , Hans-Joachim Schulze , Carolin Tolksdorf , Winfried Kaindl , Armin Willmeroth
发明人： Anton Mauder , Hans-Joachim Schulze , Carolin Tolksdorf , Winfried Kaindl , Armin Willmeroth
IPC分类号： H01L27/07 , H01L21/8234
CPC分类号： H01L27/0808 , H01L21/26513 , H01L27/0811 , H01L27/088 , H01L29/7836
摘要： A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage.
摘要翻译：具有动态栅极漏极电容的半导体器件。一个实施例提供一种半导体器件。该器件包括半导体衬底，场效应晶体管结构，其包括源区，第一体区，漏区，栅电极结构和栅极绝缘层。栅极绝缘层设置在栅电极结构和体区之间。栅极电极结构和漏极区域部分地形成电容器结构，其包括栅极 - 漏极电容，该栅极 - 漏极电容被配置为随着施加在源极和漏极区域之间的变化的反向电压而动态地栅极 - 漏极电容在给定的阈值下包括至少一个局部最大值，或者在给定的反向电压下包括平台状过程。

79. 发明授权

US08288258B2 Method for producing a semiconductor 有权
标题翻译：半导体制造方法
公开(公告)号：US08288258B2
公开(公告)日：2012-10-16
申请号：US12769976
申请日：2010-04-29
申请人： Anton Mauder , Hans-Joachim Schulze , Helmut Strack , Hans-Joerg Timme , Wolfgang Werner
发明人： Anton Mauder , Hans-Joachim Schulze , Helmut Strack , Hans-Joerg Timme , Wolfgang Werner
IPC分类号： H01L21/306
CPC分类号： H01L21/26506 , H01L21/263 , H01L21/3242
摘要： A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.
摘要翻译：一种制造半导体的方法包括提供具有第一侧和第二侧的p掺杂半导体本体; 通过第一侧将半导体本体中的质子注入半导体本体的目标深度; 将半导体主体的第一侧接合到载体基板; 通过加热所述半导体本体从而在半导体本体中形成pn结，形成半导体本体中的n掺杂区; 以及移除所述半导体本体的所述第二侧至少与在所述pn结处跨过的空间电荷区域一样远。

80. 发明申请

US20120083098A1 Method for Manufacturing a Composite Wafer Having a Graphite Core, and Composite Wafer Having a Graphite Core 有权
标题翻译：制造具有石墨芯的复合晶片的方法和具有石墨芯的复合晶片
公开(公告)号：US20120083098A1
公开(公告)日：2012-04-05
申请号：US13206029
申请日：2011-08-09
申请人： Rudolf Berger , Hermann Gruber , Wolfgang Lehnert , Guenther Ruhl , Raimund Foerg , Anton Mauder , Hans-Joachim Schulze , Karsten Kellermann , Michael Sommer , Christian Rottmair , Roland Rupp
发明人： Rudolf Berger , Hermann Gruber , Wolfgang Lehnert , Guenther Ruhl , Raimund Foerg , Anton Mauder , Hans-Joachim Schulze , Karsten Kellermann , Michael Sommer , Christian Rottmair , Roland Rupp
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , C30B25/186 , H01L21/02115 , H01L21/02282 , H01L21/02598 , H01L21/2007 , H01L21/265 , H01L21/3212 , H01L21/324 , H01L21/76251 , H01L29/1608 , H01L29/20 , H01L29/2003
摘要： According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.
摘要翻译：根据实施例，复合晶片包括具有石墨层和附着到载体衬底的单晶半导体层的载体衬底。

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