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71. 发明授权

US6122041A Liquid cooled light pipe assembly for pyrometric temperature measurement 失效
标题翻译：液体冷却光管组件，用于高温测温
公开(公告)号：US6122041A
公开(公告)日：2000-09-19
申请号：US942564
申请日：1997-10-01
申请人： Habib Najm , Mehrdad M. Moslehi
发明人： Habib Najm , Mehrdad M. Moslehi
IPC分类号： G01J5/06 , G01J5/04
CPC分类号： G01J5/061
摘要： A liquid cooled light pipe is disclosed which allows effective pyrometric temperature measurements using a remote detector. Temperature of the light pipe assembly is controlled and maintained at an approximately constant value in order to establish good long-term temperature measurement accuracy. The temperature-controlled light pipe assembly of this invention can be used for multi-point temperature measurements of a heated body with good spatial resolution for real-time multi-zone temperature control applications.
摘要翻译：公开了一种液体冷却的光管，其允许使用远程检测器进行有效的高温测量温度测量。光管组件的温度被控制并保持在近似恒定的值，以便建立良好的长期温度测量精度。本发明的温度控制光管组件可用于具有良好空间分辨率的加热体的多点温度测量，用于实时多区域温度控制应用。

72. 发明授权

US6090690A Direct gas-phase doping of semiconductor wafers using an organic dopant source 失效
标题翻译：使用有机掺杂剂源直接气相掺杂半导体晶片
公开(公告)号：US6090690A
公开(公告)日：2000-07-18
申请号：US847319
申请日：1997-04-23
申请人： Mehrdad M. Moslehi
发明人： Mehrdad M. Moslehi
IPC分类号： H01L21/223 , H01L21/26
CPC分类号： H01L21/223
摘要： A direct doping method for semiconductor wafers, comprising the steps of providing a semiconductor wafer, exposing the surface of the wafer to a process medium in order to directly dope at least a portion of the surface of the wafer, wherein the process medium comprises a dopant gas, and wherein the dopant gas comprises an organic compound of a dopant species, and heating the wafer, thermally activating the direct doping process and causing solid-state diffusion of the dopant species into the semiconductor wafer surface. The organic source of a dopant species includes the organic compounds comprising boron, arsenic and phosphorous. The wafer is heated in the presence of an organic dopant source, thermally activating the doping process and causing surface chemisorption, surface dissociation, and solid-state diffusion of the dopant species into the wafer surface. The organic dopant source can be used with a germanium-containing additive gas, a halogen-containing compound or a remote plasma energy source.
摘要翻译：一种用于半导体晶片的直接掺杂方法，包括以下步骤：提供半导体晶片，将晶片的表面暴露于工艺介质以便直接掺杂晶片表面的至少一部分，其中所述工艺介质包含掺杂剂气体，并且其中所述掺杂剂气体包括掺杂剂物质的有机化合物，并加热所述晶片，热激活所述直接掺杂工艺并引起所述掺杂剂物质进入所述半导体晶片表面的固态扩散。掺杂剂物质的有机源包括含有硼，砷和磷的有机化合物。在有机掺杂剂源的存在下加热晶片，热激活掺杂过程并引起掺杂剂物质进入晶片表面的表面化学吸附，表面解离和固态扩散。有机掺杂剂源可以与含锗的添加气体，含卤素化合物或远程等离子体能源一起使用。

73. 发明授权

US6073576A Substrate edge seal and clamp for low-pressure processing equipment 失效
标题翻译：用于低压加工设备的基板边缘密封和夹具
公开(公告)号：US6073576A
公开(公告)日：2000-06-13
申请号：US977822
申请日：1997-11-25
申请人： Mehrdad M. Moslehi , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Cecil J. Davis
IPC分类号： C23C14/50 , C23C16/458 , C23C16/00
CPC分类号： C23C14/50 , C23C16/4585 , Y10S414/136 , Y10S414/14 , Y10S414/141 , Y10T279/35
摘要： A low-pressure processor for processing substrates includes a chuck that engages the substrates' peripheries for purposes of clamping, sealing, and centering the substrates on chuck bodies. For accomplishing all three purposes, a mechanical clamp can be arranged with two sealing regions. One of the sealing regions seals the clamp to a chuck body or an extension of the chuck body, and another of the sealing regions engages a peripheral edge surface of a substrate for sealing the clamp to the substrate. The second sealing region includes an inclined seating surface that engages a front edge of the substrate's peripheral edge surface and divides a clamping force into a first component that presses the substrate against the chuck body and a second component that centers the substrate on the chuck body. The peripheral engagement of the substrate exposes substantially the entire front surface of the substrate to processing and exposes substantially the entire back surface of the substrate to a heat-transfer gas for enhancing thermal transfers between the substrate and the temperature-regulated chuck body.
摘要翻译：用于处理基板的低压处理器包括与基板周边接合的卡盘，用于夹紧，密封和将基板对准在卡盘体上。为了实现所有这三个目的，机械夹具可以布置有两个密封区域。一个密封区域将夹具密封到卡盘主体或卡盘主体的延伸部分，另一个密封区域与基板的周边边缘表面接合，以将夹具密封到基板。第二密封区域包括倾斜的就座表面，其与衬底的周边边缘表面的前边缘接合并且将夹紧力分成第一部件，该第一部件将衬底压靠在卡盘主体上;以及第二部件，其将衬底定位在卡盘主体上。衬底的周边接合基本上暴露了衬底的整个前表面，从而基本上将衬底的整个后表面基本上暴露于传热气体，以增强衬底和温度调节卡盘体之间的热传递。

74. 发明授权

US6004029A Method for automated calibration of temperature sensors in rapid thermal processing equipment 失效
标题翻译：快速热处理设备中温度传感器的自动校准方法
公开(公告)号：US6004029A
公开(公告)日：1999-12-21
申请号：US680244
申请日：1996-07-10
申请人： Mehrdad M. Moslehi , Yong Jin Lee
发明人： Mehrdad M. Moslehi , Yong Jin Lee
IPC分类号： G01J5/10 , G01J5/52 , G01K1/14 , G01K15/00 , F27D11/00 , H01L21/02
CPC分类号： G01K1/146 , G01J5/10 , G01J5/522 , G01K15/00
摘要： This invention presents an automatic calibration system and method for calibration of a substrate temperature sensor in a thermal processing equipment, such as a rapid thermal processing system. The calibration system includes a temperature-sensitive probe associated with the substrate temperature sensor to calibrate the substrate temperature sensor and an actuator to position the temperature-sensitive probe relative to the substrate during a calibration cycle. The actuator and temperature-sensitive probe of the automatic calibration system can be incorporated into the thermal processing equipment in order to maintain the thermal processing equipment cleanliness and integrity during a calibration cycle, and to allow rapid automated calibration. In the preferred embodiment of this invention, the temperature-sensitive probe and its actuator are implemented in the gas showerhead assembly of a rapid thermal processing system.
摘要翻译：本发明提出了一种用于在诸如快速热处理系统的热处理设备中校准衬底温度传感器的自动校准系统和方法。校准系统包括与衬底温度传感器相关联的温度敏感探针以校准衬底温度传感器，以及在校准周期期间相对于衬底定位温度敏感探针的致动器。自动校准系统的致动器和温度敏感探头可以并入热处理设备，以便在校准周期内保持热处理设备的清洁度和完整性，并允许快速自动校准。在本发明的优选实施例中，温度敏感探针及其致动器被实现在快速热处理系统的气体喷头组件中。

75. 发明授权

US5972803A High throughput optical curing process for semiconductor device manufacturing 失效
标题翻译：半导体器件制造的高通量光学固化工艺
公开(公告)号：US5972803A
公开(公告)日：1999-10-26
申请号：US955422
申请日：1997-10-22
申请人： Jing Shing Shu , Ming-Jang Hwang , Mehrdad M. Moslehi , Cecil J. Davis
发明人： Jing Shing Shu , Ming-Jang Hwang , Mehrdad M. Moslehi , Cecil J. Davis
IPC分类号： B29C35/02 , B29L31/34 , H01L21/3105 , H01L21/314 , H01L21/768 , H01L23/522 , H01L21/469 , H01L21/02
CPC分类号： H01L21/76828 , H01L21/31058
摘要： This is a curing method of low-k dielectric material in a semiconductor device and system for such. The method may comprise: depositing metal interconnection lines; depositing the low-k dielectric material layer over the lines; and curing the low-k dielectric material layer with a heating lamp for less than 10 minutes, wherein the heating lamp provides optical radiation energy in the infrared spectral range of about 1 micron to 3.5 microns in wavelength. The heating lamp may be a tungsten-halogen lamp.
摘要翻译：这是半导体器件中的低k电介质材料的固化方法及其制造方法。该方法可以包括：沉积金属互连线; 在线路上沉积低k电介质材料层; 以及用加热灯固化低k电介质材料层少于10分钟，其中加热灯在波长为约1微米至3.5微米的红外光谱范围内提供光辐射能量。加热灯可以是卤钨灯。

76. 发明授权

US5936829A Thermally conductive chuck for vacuum processor 失效
标题翻译：真空处理器导热卡盘
公开(公告)号：US5936829A
公开(公告)日：1999-08-10
申请号：US934287
申请日：1997-09-19
申请人： Mehrdad M. Moslehi
发明人： Mehrdad M. Moslehi
IPC分类号： C23C14/50 , C23C14/54 , C23C16/458 , C23C16/46 , H01L21/00 , H02N13/00
CPC分类号： C23C16/463 , C23C14/50 , C23C14/541 , C23C16/4585 , C23C16/46 , C23C16/466 , H01L21/67103 , Y10T279/23
摘要： A chuck body mounts a substrate within a vacuum chamber. Contiguous portions of the substrate and the chuck body form a heat-transfer interface. An intermediate sealing structure seals the chuck body to the substrate independently of any contact between the chuck body and the substrate and forms a separately pressurizable region within the vacuum chamber. A control system promotes flows of gas through a periphery of the heat-transfer interface within the separately pressurizable region for controlling gas pressures at the heat-transfer interface.
摘要翻译：卡盘体将基板安装在真空室内。基板和卡盘体的相邻部分形成热传递界面。中间密封结构将卡盘主体与基板密封，独立于卡盘主体和基板之间的任何接触，并在真空室内形成单独的可加压区域。控制系统促进气体通过在单独加压区域内的传热界面的周边的流动，以控制热传递界面处的气体压力。

77. 发明授权

US5871588A Programmable ultraclean electromagnetic substrate rotation apparatus and method for microelectronics manufacturing equipment 失效
标题翻译：用于微电子制造设备的可编程超声电磁基板旋转装置和方法
公开(公告)号：US5871588A
公开(公告)日：1999-02-16
申请号：US677980
申请日：1996-07-10
申请人： Mehrdad M. Moslehi , Yong Jin Lee
发明人： Mehrdad M. Moslehi , Yong Jin Lee
IPC分类号： C23C16/44 , C23C16/458 , H01L21/205 , H01L21/683 , H01L21/687 , H02K21/14 , C23C16/00
CPC分类号： H01L21/68792 , C23C16/4584
摘要： An apparatus and method for wafer rotation in microelectronics manufacturing equipment is presented. The present invention combines an external stator assembly having a plurality of electromagnetic actuator coils with an internal rotor assembly having a plurality of multipolar permanent magnets or ferromagnetic coupling tabs. The rotor assembly supports the semiconductor wafer or any other substrate inside the process chamber. The electromagnetic actuator coils of the stator assembly receive a plurality of multi-phase, controlled frequency electrical currents to create magnetic fields around the actuator coils that interact with the multipolar permanent magnets or ferromagnetic coupling tabs of the rotor assembly to provide the rotational force to rotate the rotor assembly and thus, rotate the semiconductor wafer or any other substrate within the process chamber.
摘要翻译：介绍了微电子制造设备中晶圆旋转的装置和方法。本发明将具有多个电磁致动器线圈的外部定子组件与具有多个多极永磁体或铁磁耦合片的内部转子组件组合。转子组件支撑半导体晶片或处理室内部的任何其它基板。定子组件的电磁致动器线圈接收多个多相控制频率电流，以产生围绕致动器线圈的磁场，该磁场与转子组件的多极永磁体或铁磁耦合接头相互作用以提供旋转力转子组件并因此使半导体晶片或处理室内的任何其它基板旋转。

78. 发明授权

US5866472A Direct gas-phase doping of semiconductor wafers using an organic dopant source 失效
公开(公告)号：US5866472A
公开(公告)日：1999-02-02
申请号：US784431
申请日：1997-01-16
申请人： Mehrdad M. Moslehi
发明人： Mehrdad M. Moslehi
IPC分类号： H01L21/223 , H01L21/26
CPC分类号： H01L21/223
摘要： A direct doping method for semiconductor wafers, comprising the steps of providing a semiconductor wafer, exposing the surface of the wafer to a process medium in order to directly dope at least a portion of the surface of the wafer, wherein the process medium comprises a dopant gas, and wherein the dopant gas comprises an organic compound of a dopant species, and heating the wafer, thermally activating the direct doping process and causing solid-state diffusion of the dopant species into the semiconductor wafer surface. The organic source of a dopant species includes the organic compounds comprising boron, arsenic and phosphorous. The wafer is heated in the presence of an organic dopant source, thermally activating the doping process and causing surface chemisorption, surface dissociation, and solid-state diffusion of the dopant species into the wafer surface. The organic dopant source can be used with a germanium-containing additive gas, a halogen-containing compound or a remote plasma energy source.

79. 发明授权

US5525780A Method and apparatus for uniform semiconductor material processing using induction heating with a chuck member 失效
标题翻译：使用感应加热与卡盘部件均匀半导体材料加工的方法和装置
公开(公告)号：US5525780A
公开(公告)日：1996-06-11
申请号：US114887
申请日：1993-08-31
申请人： Mehrdad M. Moslehi
发明人： Mehrdad M. Moslehi
IPC分类号： H01L21/00 , H05B6/10
CPC分类号： H01L21/67103
摘要： A multipurpose chuck apparatus (100) has a chamber (112) for holding a medium (114). The medium (114) is heated into a high temperature molten state by a radio frequency induction heating coil (130). The medium (114) heats up a semiconductor material (118) through a chuck member (116) that separates the medium (114) from the semiconductor material (118). The heating performed by the radio frequency induction heating coil (130) generates a fluid flow within the medium (114), providing a uniform temperature distribution throughout the medium (114). A magnetic rotation device (121) controls movement of rotating member (128) having a mixing member (122) and rotating fins (184) to ensure complete uniform temperature distribution throughout the medium (114), especially in the vicinity of the chuck member (116). An inlet cooling tube (122) and an outlet cooling tube (124), isolated from the medium (114) provide cooling fluid to the chuck member (116) for temperature control of the semiconductor material (118).
摘要翻译：多用途卡盘装置（100）具有用于保持介质（114）的腔室（112）。介质（114）被射频感应加热线圈（130）加热到高温熔融状态。介质（114）通过将介质（114）与半导体材料（118）分离的卡盘构件（116）来加热半导体材料（118）。由射频感应加热线圈（130）执行的加热在介质（114）内产生流体流，从而在整个介质（114）中提供均匀的温度分布。磁旋转装置（121）控制具有混合构件（122）和旋转翅片（184）的旋转构件（128）的运动，以确保在整个介质（114）中完全均匀的温度分布，特别是在卡盘构件 116）。从介质（114）隔离的入口冷却管（122）和出口冷却管（124）向冷却液供给冷却流体用于半导体材料（118）的温度控制。

80. 发明授权

US5474381A Method for real-time semiconductor wafer temperature measurement based on a surface roughness characteristic of the wafer 失效
标题翻译：基于晶片的表面粗糙度特性的实时半导体晶片温度测量方法
公开(公告)号：US5474381A
公开(公告)日：1995-12-12
申请号：US160595
申请日：1993-11-30
申请人： Mehrdad M. Moslehi
发明人： Mehrdad M. Moslehi
IPC分类号： G01J5/00 , G01K11/00 , G01K11/12 , G01N21/47 , G01N21/55 , H01L21/66
CPC分类号： G01N21/55 , B24B37/013 , G01K11/00 , G01K11/12 , G01N21/4738 , H01L22/26 , H01L22/12 , H01L2924/0002
摘要： A sensor (100) for measuring semiconductor wafer (10) temperature in semiconductor processing equipment (30), comprising a first laser (104) to provide a first laser beam at a first wavelength and a second laser (106) to provide a second laser beam at a second wavelength. The sensor also includes laser driver (108) and oscillator (110) to modulate the wavelength of the first and second laser beams as the laser beams are directed to and reflected from the wafer (10), and detector module (130) to measure the change in specular reflectance of the wafer (10) resulting from the modulation of the wavelength of the first and second laser beams. The sensor system also includes signal processing circuitry (138) to determine rms surface roughness of wafer (10) at a known reference temperature from the change in reflectance of wafer (10) resulting from modulation of the wavelengths of the first and second laser beams, and to determine the temperature of wafer (10) from the change in specular reflectance of wafer (10) resulting from modulation of the wavelengths of the first and second laser beams while wafer (10) is at an unknown temperature and the surface roughness of the wafer at the known temperature.
摘要翻译：一种用于测量半导体处理设备（30）中的半导体晶片（10）温度的传感器（100），包括：第一激光器（104），用于提供第一波长的第一激光束和第二激光器（106），以提供第二激光器第二波长的光束。传感器还包括激光驱动器（108）和振荡器（110），用于当激光束被引导到晶片（10）并从晶片（10）反射时，调制第一和第二激光束的波长，以及检测器模块（130）通过调制第一和第二激光束的波长而导致晶片（10）的镜面反射率的变化。传感器系统还包括信号处理电路（138），用于根据由第一和第二激光束的波长的调制产生的晶片（10）的反射率变化，在已知参考温度下确定晶片（10）的均方根表面粗糙度，并且从晶片（10）处于未知温度时调制第一激光束和第二激光束的波长而产生的晶片（10）的镜面反射率的变化来确定晶片（10）的温度，晶圆在已知温度下。

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