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71. 依法登记的发明

USH1264H Method of in situ stoiciometric and geometrical photo induced modifications to compound thin films during epitaxial growth and applications thereof 失效
标题翻译：外延生长过程中复合薄膜的原位置换和几何光诱导修饰方法及其应用
公开(公告)号：USH1264H
公开(公告)日：1993-12-07
申请号：US691068
申请日：1991-04-24
申请人： John E. Epler , Harlan F. Chung , Thomas L. Paoli
发明人： John E. Epler , Harlan F. Chung , Thomas L. Paoli
IPC分类号： C23C16/04 , C23C16/52 , H01L21/20
CPC分类号： C23C16/52 , C23C16/047
摘要： In situ geometrical and stoichiometric properties of deposited films are brought about by employing a scanned irradiation source directed to a spot which is scanned across the growth surface in a chemical vaGOVERNMENT RIGHTSThe Government has certain rights in this invention pursuant to Contract No. 86F173100 awarded by the Defense Advanced Research Projects Agency (DARPA).

72. 发明授权

US5228049A Beam control in integrated diode laser and power amplifier 失效
标题翻译：集成二极管激光器和功率放大器中的光束控制
公开(公告)号：US5228049A
公开(公告)日：1993-07-13
申请号：US750382
申请日：1991-08-27
申请人： Thomas L. Paoli
发明人： Thomas L. Paoli
IPC分类号： G02B6/122 , H01S3/00 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/062 , H01S5/10 , H01S5/20 , H01S5/50
CPC分类号： H01S5/50 , H01S5/20 , H01S2301/18 , H01S5/0267 , H01S5/0425 , H01S5/06243 , H01S5/1014 , H01S5/1064 , H01S5/1082 , H01S5/2036
摘要： A semiconductor laser having a plurality of heterostructure layers including at least one active layer for production and amplification of coherent radiation includes an integrated amplifier part. The amplifier part includes a contact set and a mask layer to shape a lateral gain profile, through control of injected carriers, in the active region of the amplifier part. The shaped lateral gain profile matches the amplitude maxima and minima of a fundamental mode of the semiconductor laser, which reduces modal distortion and improves efficiency. The contact of the integrated amplifier is also shaped to match a width of an expanding laser beam from the laser part into and through the amplifier part. Additionally, various lenses integrated onto an output of the amplifier part can effect collimation or magnification/focussing. In one embodiment, the integrated lens part includes a separately addressable and controllable contact to dynamically control a focal length of the integrated lens. This electronically controllable lens permits spot size modulation and dynamic correction of focussing errors.

73. 发明授权

US5216263A High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays 失效
标题翻译：高密度，独立寻址，表面发射半导体激光发射二极管阵列
公开(公告)号：US5216263A
公开(公告)日：1993-06-01
申请号：US620229
申请日：1990-11-29
申请人： Thomas L. Paoli
发明人： Thomas L. Paoli
IPC分类号： H01S5/00 , B41J2/455 , H01L27/15 , H01S5/026 , H01S5/20 , H01S5/42
CPC分类号： B41J2/45 , H01L27/153 , H01S5/423 , H01S5/026 , H01S5/18308 , H01S5/2059
摘要： A high density surface emitting semiconductor LED array comprises disordered regions extending through a second confinement layer, an active layer and partially extending through a first confinement layer to define light emitting areas therebetween the disordered regions. Individual contacts on the contact layer aligned with each emitting area inject current through the layers to a contact on a substrate causing emission of light from the active layer through the surface of the exposed first confinement layer in the substrate. The second confinement layer can be replaced with a DBR to form an enhanced LED array. Both confinement layers can be replaced with DBRs to form a laser array. A refractive semiconductor layer, fresnel lenses or a micro lens array can be used to optically modify the surface emitted light.

74. 发明授权

US5058121A Coupling structures for a phase-locked laser array 失效
标题翻译：相位锁定阵列的耦合结构
公开(公告)号：US5058121A
公开(公告)日：1991-10-15
申请号：US537382
申请日：1990-06-13
申请人： Thomas L. Paoli
发明人： Thomas L. Paoli
IPC分类号： H01S5/00 , H01S5/068 , H01S5/10 , H01S5/40 , H01S5/50
CPC分类号： H01S5/4031 , H01S5/4068 , H01S5/10 , H01S5/4062 , H01S5/50
摘要： Improved coupling structures for an index-guided laser array utilize passive transparent waveguides to improve coupling and phase-lock the array.

75. 发明授权

US4694459A Hybrid gain/index guided semiconductor lasers and array lasers 失效
标题翻译：混合增益/折射率引导半导体激光器和阵列激光器
公开(公告)号：US4694459A
公开(公告)日：1987-09-15
申请号：US739805
申请日：1985-05-31
申请人： Robert D. Burnham , Thomas L. Paoli , Donald R. Scifres , William Streifer
发明人： Robert D. Burnham , Thomas L. Paoli , Donald R. Scifres , William Streifer
IPC分类号： H01S5/00 , H01S5/062 , H01S5/0625 , H01S5/10 , H01S5/20 , H01S5/40 , H01S3/19
CPC分类号： H01S5/06255 , H01S5/10 , H01S5/20 , H01S5/4068 , H01S5/06243 , H01S5/1032 , H01S5/2059
摘要： A hybrid index/gain guided semiconductor laser has a gain guide type body with index waveguide attributes is characterized by having two regions of current confinement means. The first of these regions contains primary current confinement means and at least one second region which includes a pair of current confinement means parallel to each other and axially offset relative to the axis of the primary current confinement means and extend from the other laser facet toward the first region. The axially offset current confinement means in the second region provide regions of lower refractive index in the laser structure compared to the region of the laser optical cavity established between the offset current confinement means and, as a result, function as an index optical waveguide for the laser. The first region may be electrically isolated from the second region so that the first region is independently pumped relative to the second region. By varying the pumping current to the regions of the axially offset current confinement means, one can selectively change the refractive index differences established between the axially offset confinement means regions and the optical cavity region therebetween. The primary and offset current confinement geometry may be utilized in single or multiple element lasers.
摘要翻译：混合折射率/增益引导半导体激光器具有具有折射率波导属性的增益引导型体，其特征在于具有两个电流限制装置区域。这些区域中的第一区域包含初级电流限制装置和至少一个第二区域，其包括彼此平行并且相对于初级电流限制装置的轴线轴向偏移的一对电流限制装置，并且从另一个激光小面朝向第一区。与在偏置电流限制装置之间建立的激光光学腔的区域相比，第二区域中的轴向偏移电流限制装置在激光器结构中提供较低折射率的区域，结果，作为用于激光。第一区域可以与第二区域电隔离，使得第一区域相对于第二区域被独立地泵浦。通过改变到轴向偏移电流限制装置的区域的泵送电流，可以选择性地改变在轴向偏移限制装置区域之间建立的折射率差异和它们之间的光学腔区域。主要和偏移电流限制几何可以用于单个或多个元件激光器。

76. 再颁专利

USRE40230E1 Two section blue laser diode with reduced output power droop 有权
标题翻译：两部分蓝色激光二极管，输出功率降低
公开(公告)号：USRE40230E1
公开(公告)日：2008-04-08
申请号：US10737669
申请日：2003-12-15
申请人： Michael Kneissi , Thomas L. Paoli
发明人： Michael Kneissi , Thomas L. Paoli
IPC分类号： H01S5/026
CPC分类号： B82Y20/00 , H01S5/0265 , H01S5/0287 , H01S5/0625 , H01S5/06251 , H01S5/34333
摘要： A III-V nitride blue laser diode has an amplifier region and a modulator region. The amplifier region has a constant current to keep the region near the lasing threshold. The modulator region has a small varying forward current or reverse bias voltage which controls the light output of the laser. This two section blue laser diode requires much lower power consumption than directly modulated lasers which reduces transient heating and “drooping” of the light output.
摘要翻译： III-V族氮化物蓝色激光二极管具有放大器区域和调制器区域。放大器区域具有恒定电流以保持该区域接近激光阈值。调制器区域具有小的变化的正向电流或反向偏置电压，其控制激光器的光输出。这两部分蓝色激光二极管比直接调制的激光器要低得多的功耗，减少了瞬态加热和“下垂”光输出。

77. 发明授权

US06744800B1 Method and structure for nitride based laser diode arrays on an insulating substrate 有权
标题翻译：绝缘基板上基于氮化物的激光二极管阵列的方法和结构
公开(公告)号：US06744800B1
公开(公告)日：2004-06-01
申请号：US09223112
申请日：1998-12-30
申请人： Michael A. Kneissl , Thomas L. Paoli , David P. Bour , Noble M. Johnson , Jack Walker
发明人： Michael A. Kneissl , Thomas L. Paoli , David P. Bour , Noble M. Johnson , Jack Walker
IPC分类号： H01S500
CPC分类号： H01L21/6835 , B82Y20/00 , H01L21/2007 , H01L27/153 , H01L33/0079 , H01L2221/68359 , H01L2221/68368 , H01L2224/83192 , H01L2224/83895 , H01L2924/01079 , H01S5/0217 , H01S5/34333 , H01S5/4025 , H01S5/4031
摘要： A method and structure for nitride based laser diode arrays on an insulating substrate is described. Various contact layouts are used to reduce electrical and thermal crosstalk between laser diodes in the array. A channel structure is used to make a surface emitting laser diode while maintaining a simple contact structure. Buried layers are used to provide a compact and low crosstalk contact structure for the laser diode array.
摘要翻译：描述了绝缘基板上的基于氮化物的激光二极管阵列的方法和结构。使用各种接触布局来减少阵列中的激光二极管之间的电和热串扰。通道结构用于制造表面发射激光二极管，同时保持简单的接触结构。掩埋层用于为激光二极管阵列提供紧凑且低串扰的接触结构。

78. 发明授权

US06570898B2 Structure and method for index-guided buried heterostructure AlGalnN laser diodes 有权
公开(公告)号：US06570898B2
公开(公告)日：2003-05-27
申请号：US09408458
申请日：1999-09-29
申请人： David P. Bour , Michael A. Kneissl , Linda T. Romano , Thomas L. Paoli , Christian G. Van de Walle
发明人： David P. Bour , Michael A. Kneissl , Linda T. Romano , Thomas L. Paoli , Christian G. Van de Walle
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/2004 , H01S5/2275 , H01S2301/18 , H01S2304/00
摘要： An index-guided buried heterostructure AlGaInN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures.

79. 发明授权

US6090300A Ion-implantation assisted wet chemical etching of III-V nitrides and alloys 失效
标题翻译： III-V氮化物和合金的离子注入辅助湿化学蚀刻
公开(公告)号：US6090300A
公开(公告)日：2000-07-18
申请号：US84223
申请日：1998-05-26
申请人： Jack Walker , Werner Goetz , Noble M. Johnson , David P. Bour , Thomas L. Paoli
发明人： Jack Walker , Werner Goetz , Noble M. Johnson , David P. Bour , Thomas L. Paoli
IPC分类号： H01L33/00 , H01S5/20 , H01S5/323 , H01L21/3115 , B44C1/22
CPC分类号： H01L33/007 , H01S5/2081 , H01S5/32341
摘要： A process for etching III-V nitride and III-V nitride alloy materials first implants selected regions of the materials with ions and then selectively etches the implanted regions in an etching liquid, such as an aqueous base. The etch depth is controlled by the energy, mass and dose of the implanted ions.
摘要翻译：蚀刻III-V族氮化物和III-V族氮化物合金材料的方法首先用离子注入材料的选定区域，然后选择性地蚀刻蚀刻液体（例如碱水溶液）中的注入区域。蚀刻深度由注入离子的能量，质量和剂量控制。

80. 发明授权

US06002142A Integrated optoelectronic structures incorporating P-type and N-type layer disordered regions 失效
标题翻译：结合P型和N型层无序区域的集成光电结构
公开(公告)号：US06002142A
公开(公告)日：1999-12-14
申请号：US724620
申请日：1996-09-30
申请人： Thomas L. Paoli
发明人： Thomas L. Paoli
IPC分类号： H01L27/144 , H01L31/103 , H01L31/105 , H01L31/11 , H01L29/06
CPC分类号： H01L31/1035 , H01L27/1443 , H01L31/105 , H01L31/1105
摘要： Novel semiconductor devices are monolithically defined with p-type and/or n-type wide bandgap material formed by impurity induced layer disordering of selected regions of multiple semiconductor layers. The devices are beneficially fabricated by simultaneously forming the n-type and/or p-type layer disordered regions with sufficiently abrupt transitions from disordered to ordered material. The novel devices include laterally and vertically oriented P-i-N or N-i-P photodetectors integrated with laterally oriented P-N-P or N-P-N bipolar transistors, respectively, an N-P-N or P-N-P bipolar transistor monolithically integrated with an edge emitting semiconductor laser, and laterally and vertically oriented P-i-N or N-i-P photodetectors integrated with the monolithically integrated bipolar transistor and edge emitting semiconductor laser.
摘要翻译：新型半导体器件通过由多个半导体层的选定区域的杂质诱导层失调形成的p型和/或n型宽带隙材料单片地限定。通过同时形成具有从无序材料到有序材料的足够突变的n型和/或p型层无序区域有益地制造器件。新型器件分别包括横向和垂直取向的PiN或NiP光电检测器，分别与横向取向的PNP或NPN双极晶体管集成，与边缘发射半导体激光器单片集成的NPN或PNP双极晶体管，以及横向和垂直定向的PiN或NiP光电检测器单片集成双极晶体管和边缘发射半导体激光器。

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