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71. 发明申请

US20070051635A1 Plating apparatus and method for controlling conductor deposition on predetermined portions of a wafer 有权
标题翻译：用于控制晶片的预定部分上的导体沉积的电镀装置和方法
公开(公告)号：US20070051635A1
公开(公告)日：2007-03-08
申请号：US11221060
申请日：2005-09-06
申请人： Bulent Basol
发明人： Bulent Basol
IPC分类号： C25D7/12
CPC分类号： C25D17/001 , C25D5/022 , C25D5/06 , C25D7/123
摘要： A plating apparatus and method for deposition of a conductive material on a semiconductor wafer having surface portions and cavity portions. A differential in an adsorbed concentration of an additive, including accelerators or suppressors, between a surface portion and a cavity portion of a wafer surface is established in a chamber. A mask or sweeper may be used to establish the differential. After establishing the differential in the chamber, the conductive material is electrodeposited to form a conductive layer on the surface in another chamber.
摘要翻译：一种用于在具有表面部分和空腔部分的半导体晶片上沉积导电材料的电镀装置和方法。在室中建立了表面部分和晶片表面的空腔部分之间的添加剂的吸附浓度的差异，包括加速器或抑制器。可以使用面罩或清扫器来建立差速器。在室中建立差分器之后，导电材料被电沉积以在另一个室中的表面上形成导电层。

72. 发明申请

US20060189155A1 Method of Forming Semiconductor Compound Film For Fabrication of Electronic Device and Film Produced by Same 审中-公开
标题翻译：形成用于制造电子器件的半导体化合物膜和由其制造的膜的方法
公开(公告)号：US20060189155A1
公开(公告)日：2006-08-24
申请号：US11278663
申请日：2006-04-04
申请人： Bulent Basol
发明人： Bulent Basol
IPC分类号： H01L21/31
CPC分类号： C23C8/02 , C23C10/02 , C23C10/06 , C23C12/00 , H01L31/0322 , H01L31/18 , Y02E10/541
摘要： A process of forming a compound film includes formulating a nano-powder material with a controlled overall composition and including particles of one solid solution The nano-powder material is deposited on a substrate to form a layer on the substrate, and the layer is reacted in at least one suitable atmosphere to form the compound film. The compound film may be used in fabrication of a radiation detector or solar cell.
摘要翻译：形成化合物膜的方法包括配制具有受控整体组成的纳米粉末材料并且包括一种固溶体的颗粒将纳米粉末材料沉积在基底上以在基底上形成层，并且该层在至少一种合适的气氛形成复合膜。复合膜可用于制造辐射检测器或太阳能电池。

73. 发明申请

US20060183321A1 Method for reduction of gap fill defects 审中-公开
标题翻译：减少间隙填充缺陷的方法
公开(公告)号：US20060183321A1
公开(公告)日：2006-08-17
申请号：US11238886
申请日：2005-09-27
申请人： Bulent Basol
发明人： Bulent Basol
IPC分类号： H01L21/44
CPC分类号： H01L21/76873 , H01L21/2885 , H01L21/76877
摘要： A method of electrodepositing a conductor to form a defect-free conductor layer on a wafer surface including features. The wafer surface including the features is lined with a nucleation film. The conductor is electrodeposited onto the nucleation layer from a process solution having an additive that adsorbs strongly on the already deposited conductor and weakly on the exposed portions of the nucleation layer. As a result, the conductor selectively deposits on the still exposed portions of the nucleation layer and covers them with the conductor, thereby forming the defect-free conductor layer on the wafer surface.
摘要翻译：一种电沉积导体以在晶片表面上形成无缺陷导体层的方法，包括特征。包括特征的晶片表面衬有成核膜。将导体从具有添加剂的处理溶液电沉积到成核层上，所述添加剂强烈地吸附在已经沉积的导体上，并且弱地在成核层的暴露部分上沉积。结果，导体选择性地沉积在成核层的静态暴露部分上并用导体覆盖它们，从而在晶片表面上形成无缺陷的导体层。

74. 发明申请

US20060081477A1 Method and apparatus for establishing additive differential on surfaces for preferential plating 审中-公开
标题翻译：用于在表面上建立用于优先电镀的添加剂微分的方法和装置
公开(公告)号：US20060081477A1
公开(公告)日：2006-04-20
申请号：US11237991
申请日：2005-09-26
申请人： Bulent Basol
发明人： Bulent Basol
IPC分类号： C25D7/12
CPC分类号： H01L21/2885 , C25D5/22 , C25D17/001 , C25D17/008 , H01L21/76877 , H01L21/76879
摘要： A method and apparatus for establishing additive differential on surfaces for preferential plating of conductive material on the surface of a semiconductor wafer having surface portions and cavities on the surface. An additive is adsorbed on the surface in an auxiliary chamber. Conductive material is electrodeposited on the surface after the wafer is transported from the auxiliary chamber to the plating chamber. A sweeper is used to establish a differential in an adsorbed concentration of the additive between the surface portion and the cavities. The differential affects the rate of deposition of the conductive material.
摘要翻译：一种用于在具有表面上的表面部分和空腔的半导体晶片的表面上优先镀覆导电材料的表面上建立添加剂差分的方法和装置。添加剂被吸附在辅助室中的表面上。在将晶片从辅助室输送到电镀室之后，将导电材料电沉积在表面上。清扫机用于在表面部分和空腔之间建立添加剂的吸附浓度的差异。差分影响导电材料的沉积速率。

75. 发明申请

US20060009033A1 Defect-free thin and planar film processing 审中-公开
标题翻译：无缺陷的薄和平面薄膜加工
公开(公告)号：US20060009033A1
公开(公告)日：2006-01-12
申请号：US11226511
申请日：2005-09-13
申请人： Bulent Basol , Cyprian Uzoh
发明人： Bulent Basol , Cyprian Uzoh
IPC分类号： H01L21/461 , C25D17/00
CPC分类号： C25D17/001 , C25D7/123 , H01L21/2885 , H01L21/32125 , H01L21/7684 , H01L21/76877
摘要： The process of the present invention forms copper interconnects in a semiconductor wafer surface. During the process, initially, narrow and large features are provided in the top surface of the wafer, and then a primary copper layer is deposited by employing an electrochemical deposition process. The primary copper layer completely fills the features and forms a planar surface over the narrow feature and a non-planar surface over the large feature. By employing an electrochemical mechanical deposition process, a secondary copper layer is deposited onto the primary copper layer to form a planar copper layer over the narrow and large features. After this process step, the thickness of the planar copper layer is reduced using an electropolishing process.
摘要翻译：本发明的方法在半导体晶片表面中形成铜互连。在该过程中，最初，在晶片的顶表面中提供窄且大的特征，然后通过使用电化学沉积工艺沉积初级铜层。初级铜层完全填满了特征，并在狭窄的特征上形成一个平坦的表面，在大的特征上形成一个非平面的表面。通过采用电化学机械沉积工艺，将二次铜层沉积在初级铜层上，以形成窄和大特征上的平面铜层。在该工艺步骤之后，使用电解抛光工艺来减小平面铜层的厚度。

76. 发明申请

US20050258046A1 Plating method and apparatus for controlling deposition on predetermined portions of a workpiece 失效
标题翻译：用于控制在工件的预定部分上的沉积的电镀方法和装置
公开(公告)号：US20050258046A1
公开(公告)日：2005-11-24
申请号：US11190763
申请日：2005-07-26
申请人： Bulent Basol
发明人： Bulent Basol
IPC分类号： C25D5/02 , C25D5/08 , C25D5/18 , C25D5/22 , C25D5/34 , C25D7/12 , C25D17/00 , C25D21/00 , H01L21/288 , H01L21/3205 , H01L21/768 , H01L23/12
CPC分类号： H01L21/76879 , C25D5/06 , C25D5/10 , C25D5/22 , C25D5/34 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/7684 , H01L21/76877 , Y10T428/24562
摘要： The present invention relates to methods and apparatus for plating a conductive material on a workpiece surface in a highly desirable manner. Using a workpiece-surface-influencing device, such as a mask or sweeper, that preferentially contacts the top surface of the workpiece, relative movement between the workpiece and the workpiece-surface-influencing device is established so that an additive in the electrolyte solution disposed on the workpiece and which is adsorbed onto the top surface is removed or otherwise its amount or concentration changed with respect to the additive on the cavity surface of the workpiece. Plating of the conductive material can place prior to, during and after usage of the workpiece-surface-influencing device, particularly after the workpiece surface influencing device no longer contacts any portion of the top surface of the workpiece, to achieve desirable semiconductor structures.
摘要翻译：本发明涉及以非常理想的方式在工件表面上电镀导电材料的方法和装置。使用优先接触工件顶面的工件表面影响装置（例如掩模或清扫器），建立工件和工件表面影响装置之间的相对运动，使得电解质溶液中的添加剂被设置在工件上并被吸附到顶部表面上的材料被去除或者其它量或浓度相对于在工件的空腔表面上的添加剂改变。特别是在工件表面影响装置不再接触工件的顶部表面的任何部分之后，导电材料的电镀可以放置在工件表面影响装置使用之前，期间和之后，以实现期望的半导体结构。

77. 发明申请

US20050159084A1 Chemical mechanical polishing method and apparatus for controlling material removal profile 审中-公开
标题翻译：化学机械抛光方法和控制材料去除特性的装置
公开(公告)号：US20050159084A1
公开(公告)日：2005-07-21
申请号：US10761877
申请日：2004-01-21
申请人： Bulent Basol , Rajeev Bajaj , Jalal Ashjaee
发明人： Bulent Basol , Rajeev Bajaj , Jalal Ashjaee
IPC分类号： B24B37/04 , B24B1/00
CPC分类号： B24B37/26 , B24B37/042 , B24B37/245
摘要： A material removal apparatus employing a showerhead with non-planar topography is provided. The showerhead surface includes a plurality of fluid zones to apply a fluid pressure to a backside of a polishing pad while a front side of the polishing-pad polishes a substrate. The varying topography of the showerhead surface and the resulting variable gap between a backside of a polishing pad and the non-planar surface of showerhead provide a well-defined fluid distribution and pressure profile for each zone. Such well-defined fluid distribution and pressure profiles, in turn, establish well-defined material removal rates on the substrate as the polishing pad polishes the substrate.
摘要翻译：提供了采用具有非平面形貌的喷头的材料去除装置。喷头表面包括多个流体区域，以在抛光垫的前侧抛光衬底时将流体压力施加到抛光垫的背面。淋浴头表面的变化的形状以及抛光垫的背面与喷头的非平面表面之间产生的可变间隙为每个区域提供了明确的流体分布和压力分布。随着抛光垫抛光衬底，这种明确定义的流体分布和压力分布进而在衬底上建立了明确的材料去除速率。

78. 发明申请

US20050101138A1 System and method for applying constant pressure during electroplating and electropolishing 审中-公开
标题翻译：在电镀和电解抛光期间施加恒定压力的系统和方法
公开(公告)号：US20050101138A1
公开(公告)日：2005-05-12
申请号：US10984272
申请日：2004-11-08
申请人： George Guo , Bulent Basol
发明人： George Guo , Bulent Basol
IPC分类号： B23H5/08 , B24B37/04 , C25D7/12 , C25D17/14 , C25F7/00 , H01L21/288 , H01L21/321 , B24B1/00 , B24B7/19 , B24B7/30 , H01L21/302 , H01L21/461
CPC分类号： C25D17/14 , B23H5/08 , B24B37/046 , B24B37/12 , C25D17/001 , C25F7/00 , H01L21/2885 , H01L21/32125
摘要： A system and method for processing a surface of a semiconductor workpiece. The system comprises a workpiece surface influencing device, a workpiece carrier, and an electrode. The workpiece surface influencing device has an abrasive processing surface and is magnetically biased toward the workpiece surface to be processed. The workpiece surface influencing device has a plurality of openings through which process solution may flow to wet the surface of a workpiece to be processed. Conductive material may be either deposited on the workpiece surface or removed from the workpiece surface. The system may include an electrical contact touching the workpiece and an electrode immersed in processing solution for electrochemically processing the workpiece surface.
摘要翻译：一种用于处理半导体工件的表面的系统和方法。该系统包括工件表面影响装置，工件载体和电极。工件表面影响装置具有研磨处理表面，并且朝向待加工的工件表面磁偏置。工件表面影响装置具有多个开口，工艺溶液可通过该开口流动以润湿待处理工件的表面。导电材料可以沉积在工件表面上或从工件表面移除。该系统可以包括接触工件的电触头和浸在处理溶液中的电极，用于电化学处理工件表面。

79. 发明申请

US20070293040A1 FILLING DEEP FEATURES WITH CONDUCTORS IN SEMICONDUCTOR MANUFACTURING 有权
标题翻译：在半导体制造中填充导体的深度特征
公开(公告)号：US20070293040A1
公开(公告)日：2007-12-20
申请号：US11742302
申请日：2007-04-30
申请人： Ismail Emesh , Chantal Arena , Bulent Basol
发明人： Ismail Emesh , Chantal Arena , Bulent Basol
IPC分类号： H01L21/4763
CPC分类号： H01L21/76898 , H01L21/288
摘要： A method of filling a conductive material in a three dimensional integration feature formed on a surface of a wafer is disclosed. The feature is optionally lined with dielectric and/or adhesion/barrier layers and then filled with a liquid mixture containing conductive precursor, such as a solution with dissolved ruthenium precursor or a dispersion or suspension with conductive particles (e.g., gold, silver, copper), and the substrate is rotated while the mixture is on its surface. Then, the liquid carrier is dried from the feature, leaving a conductive layer in the feature. These two steps are optionally repeated until the feature is filled up with the conductor. Then, the conductor is annealed in the feature, thereby forming a dense conductive plug in the feature.
摘要翻译：公开了一种在晶片表面形成的三维积分特征中填充导电材料的方法。该特征可选地衬有介电和/或粘附/阻挡层，然后填充含有导电前体的液体混合物，例如具有溶解的钌前体的溶液或具有导电颗粒（例如金，银，铜）的分散体或悬浮液，并且当混合物在其表面上时基板旋转。然后，从特征中干燥液体载体，在该特征中留下导电层。可选地重复这两个步骤，直到特征被导体填满。然后，导体在特征中退火，从而在该特征中形成致密的导电插塞。

80. 发明申请

US20070272558A1 Efficient Gallium Thin Film Electroplating Methods and Chemistries 失效
标题翻译：高效镓薄膜电镀方法与化学
公开(公告)号：US20070272558A1
公开(公告)日：2007-11-29
申请号：US11535927
申请日：2006-09-27
申请人： Serdar Aksu , Jiaxiong Wang , Bulent Basol
发明人： Serdar Aksu , Jiaxiong Wang , Bulent Basol
IPC分类号： C25D3/02 , C25D3/56
CPC分类号： C25D3/54 , C25D3/56 , H01L31/0322 , H01L31/0749 , Y02E10/541
摘要： The present invention relates to gallium (Ga) electroplating methods and chemistries to deposit uniform, defect free and smooth Ga films with high plating efficiency and repeatability. Such layers may be used in fabrication of electronic devices such as thin film solar cells. In one embodiment, the present invention provides a solution for application on a conductor that includes a Ga salt, a complexing agent, a solvent, and a Ga-film having submicron thickness is facilitated upon electrodeposition of the solution on the conductor. The solution may further include one or both of a Cu salt and an In salt.
摘要翻译：本发明涉及镓（Ga）电镀方法和化学镀以均匀，无缺陷和光滑的Ga膜，具有高电镀效率和重复性。这样的层可以用于制造诸如薄膜太阳能电池的电子器件。在一个实施方案中，本发明提供了一种用于在导体上施加的解决方案，该解决方案在将溶液电沉积在导体上时有助于包括Ga盐，络合剂，溶剂和具有亚微米厚度的Ga膜。该溶液还可包括Cu盐和In盐中的一种或两种。

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