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71. 发明授权

US07120047B2 Device selection circuitry constructed with nanotube technology 有权
标题翻译：纳米管技术构成的器件选择电路
公开(公告)号：US07120047B2
公开(公告)日：2006-10-10
申请号：US10693241
申请日：2003-10-24
申请人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
发明人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
IPC分类号： G11C11/00
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L27/10 , H01L27/1203 , Y10S977/734 , Y10S977/742 , Y10S977/765 , Y10S977/943
摘要： A memory system having electromechanical memory cells and decoders is disclosed. A decoder circuit selects at least one of the memory cells of an array of such cells. Each cell in the array is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. The decoder circuit is constructed of crossbar junctions at least one element of each junction being a nanotube or a nanotube ribbon.
摘要翻译：公开了一种具有机电存储器单元和解码器的存储器系统。解码器电路选择这种单元阵列的至少一个存储单元。阵列中的每个单元是其中的至少一个元素是纳米管或纳米管带的交叉连接。解码器电路由交叉连接点构成，每个结点的至少一个元件是纳米管或纳米管带。

72. 发明授权

US07056758B2 Electromechanical memory array using nanotube ribbons and method for making same 失效
公开(公告)号：US07056758B2
公开(公告)日：2006-06-06
申请号：US10850100
申请日：2004-05-20
申请人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
发明人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
IPC分类号： H01L21/00
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/16 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L27/10 , Y10S977/724 , Y10S977/742 , Y10S977/796 , Y10S977/856 , Y10S977/888 , Y10S977/943 , Y10T428/24893 , Y10T428/24917
摘要： Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports that cross the electrically conductive traces, wherein each ribbon comprises one or more nanotubes. The electro-mechanical circuit elements are made by providing a structure having electrically conductive traces and supports, in which the supports extend from a surface of the substrate. A layer of nanotubes is provided over the supports, and portions of the layer of nanotubes are selectively removed to form ribbons of nanotubes that cross the electrically conductive traces. Each ribbon includes one or more nanotubes.

73. 发明授权

US06911682B2 Electromechanical three-trace junction devices 有权
标题翻译：机电三迹交界器件
公开(公告)号：US06911682B2
公开(公告)日：2005-06-28
申请号：US10033323
申请日：2001-12-28
申请人： Thomas Rueckes , Brent M. Segal , Darren K. Brock
发明人： Thomas Rueckes , Brent M. Segal , Darren K. Brock
IPC分类号： H01L27/10 , B81B3/00 , G11C11/56 , G11C13/02 , G11C23/00 , H01H1/00 , H01H59/00 , B82B1/00
CPC分类号： G11C23/00 , B82Y10/00 , G11C11/56 , G11C13/025 , G11C2213/77 , H01H1/0094 , Y10S977/932 , Y10T428/24917
摘要： Three trace electromechanical circuits and methods of using same are described. A circuit includes first and second electrically conductive elements with a nanotube ribbon (or other electromechanical elements) disposed therebetween. The nanotube ribbon is movable toward at least one of the first and second electrically conductive elements in response to electrical stimulus applied to at least one of the first and second electrically conductive elements and the nanotube ribbon. Such circuits may be formed into arrays of cells. The upper and lower electrically conductive traces may be aligned or unaligned vertically. An electrical stimulus may be applied to at least one of the first and second electrically conductive elements and the nanotube ribbon to move the nanotube ribbon toward at least one of the first and second electrically conductive elements. Electrical signals from at least one the first and second electrically conductive elements and the nanotube ribbon may be sensed to determine the electrical state of the cell. The states may be assigned in a variety of ways. For example, if the ribbon is moved toward the first electrically conductive element, the electrical state is a first state; if the ribbon is moved toward the second electrically conductive element, the electrical state is a second state; and if the ribbon is between the first and second electrically conductive elements, the electrical state is a third state. The first, second, and third states each corresponds to a different information encoding. Or, electrical stimulus may be applied to both the first and second electrically conductive elements so that the first and second electrically conductive elements both cause the movement of the nanotube ribbon. Or, the first and second electrically conductive elements are used in a fault tolerant manner.
摘要翻译：描述了三种跟踪机电电路及其使用方法。电路包括第一和第二导电元件，其间设置有纳米管带（或其他机电元件）。响应于施加到第一和第二导电元件和纳米管带中的至少一个的电刺激，纳米管带可朝着第一和第二导电元件中的至少一个移动。这样的电路可以形成为电池阵列。上下导电迹线可以垂直对齐或不对齐。可以将电刺激施加到第一和第二导电元件和纳米管带中的至少一个，以将纳米管带向第一和第二导电元件中的至少一个移动。可以感测来自至少一个第一和第二导电元件和纳米管带的电信号以确定电池的电状态。各州可以以各种方式分配。例如，如果色带向第一导电元件移动，则电状态是第一状态; 如果色带朝向第二导电元件移动，则电状态是第二状态; 并且如果带位于第一和第二导电元件之间，则电状态是第三状态。第一，第二和第三状态各自对应于不同的信息编码。或者，可以将电刺激施加到第一和第二导电元件两者，使得第一和第二导电元件都引起纳米管带的移动。或者，以容错方式使用第一和第二导电元件。

74. 发明授权

US06574130B2 Hybrid circuit having nanotube electromechanical memory 有权
标题翻译：具有纳米管机电存储器的混合电路
公开(公告)号：US06574130B2
公开(公告)日：2003-06-03
申请号：US09915095
申请日：2001-07-25
申请人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
发明人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
IPC分类号： G11C1100
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/16 , G11C2213/77 , G11C2213/81 , Y10S977/724 , Y10S977/734 , Y10S977/742 , Y10S977/942 , Y10S977/943
摘要： A hybrid memory system having electromechanical memory cells is disclosed. A memory cell core circuit has an array of electromechanical memory cells, in which each cell is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. An access circuit provides array addresses to the memory cell core circuit to select at least one corresponding cell. The access circuit is constructed of semiconductor circuit elements.
摘要翻译：公开了一种具有机电存储器单元的混合存储器系统。存储单元核心电路具有机电存储器单元的阵列，其中每个单元是横截面结，其中至少一个元件是纳米管或纳米管带。访问电路向存储器单元核心电路提供阵列地址以选择至少一个对应的单元。存取电路由半导体电路元件构成。

75. 发明申请

US20090283803A1 ELECTROMECHANICAL MEMORY ARRAY USING NANOTUBE RIBBONS AND METHOD FOR MAKING SAME 有权
标题翻译：使用纳米碳管的机电存储器阵列及其制造方法
公开(公告)号：US20090283803A1
公开(公告)日：2009-11-19
申请号：US12415247
申请日：2009-03-31
申请人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
发明人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
IPC分类号： H01L27/08 , H01L21/82
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/16 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L27/10 , Y10S977/724 , Y10S977/742 , Y10S977/796 , Y10S977/856 , Y10S977/888 , Y10S977/943 , Y10T428/24893 , Y10T428/24917
摘要： Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports that cross the electrically conductive traces, wherein each ribbon comprises one or more nanotubes. The electro-mechanical circuit elements are made by providing a structure having electrically conductive traces and supports, in which the supports extend from a surface of the substrate. A layer of nanotubes is provided over the supports, and portions of the layer of nanotubes are selectively removed to form ribbons of nanotubes that cross the electrically conductive traces. Each ribbon includes one or more nanotubes.
摘要翻译：公开了诸如存储单元的机电电路及其制造方法。这些电路包括具有导电迹线和从衬底表面延伸的支撑体的结构，以及由支撑体悬挂的穿过导电迹线的纳米管带，其中每个带包括一个或多个纳米管。电 - 机械电路元件通过提供具有导电迹线和支撑件的结构来制造，其中支撑件从基板的表面延伸。在载体上提供一层纳米管，并且选择性地去除纳米管层的部分以形成穿过导电迹线的纳米管带。每个带包括一个或多个纳米管。

76. 发明授权

US07504051B2 Applicator liquid for use in electronic manufacturing processes 有权
标题翻译：用于电子制造工艺的涂布器液体
公开(公告)号：US07504051B2
公开(公告)日：2009-03-17
申请号：US10860432
申请日：2004-06-03
申请人： Rahul Sen , Ramesh Sivarajan , Thomas Rueckes , Brent M. Segal
发明人： Rahul Sen , Ramesh Sivarajan , Thomas Rueckes , Brent M. Segal
IPC分类号： C01B31/02 , D01F9/12 , H01L29/08
CPC分类号： B82Y10/00 , H01C17/0652 , H01L51/0003 , H01L51/0025 , H01L51/0048 , Y10S977/742 , Y10S977/743 , Y10S977/753 , Y10T428/29 , Y10T428/2982 , Y10T428/30
摘要： Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid containing nanotubes for use in an electronics fabrication process includes a solvent containing a plurality of nanotubes. The nanotubes are at a concentration of greater than 1 mg/L. The nanotubes are pretreated to reduce the level of metallic and particulate impurities to a preselected level, and the preselected metal and particulate impurities levels are selected to be compatible with an electronics manufacturing process. The solvent also is selected for compatibility with an electronics manufacturing process.
摘要翻译：描述了一些可旋涂的液体和应用技术，其可以用于形成纳米管膜或受控特性的织物。包含用于电子制造工艺的纳米管的可旋涂的液体包括含有多个纳米管的溶剂。纳米管的浓度大于1mg / L。预处理纳米管以将金属和颗粒杂质的水平降低到预选的水平，并且预选的金属和微粒杂质水平被选择为与电子制造工艺兼容。溶剂也被选择用于与电子制造工艺的兼容性。

77. 发明授权

US08541843B2 Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same 有权
标题翻译：非易失性纳米管可编程逻辑器件和使用其的非易失性纳米管场可编程门阵列
公开(公告)号：US08541843B2
公开(公告)日：2013-09-24
申请号：US12536803
申请日：2009-08-06
申请人： Claude L. Bertin , Rinn Cleavelin , Thomas Rueckes
发明人： Claude L. Bertin , Rinn Cleavelin , Thomas Rueckes
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： G11C13/0069 , B82Y10/00 , G11C13/0004 , G11C13/0007 , G11C13/004 , G11C13/0061 , G11C13/025 , G11C23/00 , G11C29/02 , G11C29/021 , G11C29/023 , G11C29/028 , G11C2013/0042 , G11C2013/0054 , G11C2213/35 , G11C2213/82 , H03K19/17728 , H03K19/17736 , H03K19/1776 , H03K19/1778 , H03K19/17796 , Y10S977/94
摘要： Field programmable device (FPD) chips with large logic capacity and field programmability that are in-circuit programmable are described. FPDs use small versatile nonvolatile nanotube switches that enable efficient architectures for dense low power and high performance chip implementations and are compatible with low cost CMOS technologies and simple to integrate.
摘要翻译：描述了具有大电路可编程的具有大逻辑容量和现场可编程性的现场可编程器件（FPD）芯片。 FPD使用小型多功能非易失性纳米管开关，可实现低密度低功耗和高性能芯片实现的高效架构，并兼容低成本CMOS技术并易于集成。

78. 发明授权

US08222704B2 Compact electrical switching devices with nanotube elements, and methods of making same 有权
标题翻译：具有纳米管元件的紧凑型电气开关器件及其制造方法
公开(公告)号：US08222704B2
公开(公告)日：2012-07-17
申请号：US12651288
申请日：2009-12-31
申请人： H. Montgomery Manning , Thomas Rueckes , Claude L. Bertin
发明人： H. Montgomery Manning , Thomas Rueckes , Claude L. Bertin
IPC分类号： H01L29/12 , H01L29/41 , H01L29/43 , H01L27/11
CPC分类号： B82Y10/00 , G11C13/025 , H01L27/24 , H01L29/0665 , H01L29/43 , H01L51/0048 , Y10S977/742 , Y10S977/936
摘要： An electrical device includes a substrate; first and second active areas; first and second word lines disposed in a first plane; first and second bit lines in a second plane and in electrical communication with first and second active areas; and a reference line disposed in a third plane. A nanotube element disposed in a fourth plane is in electrical communication with first and second active areas and the reference line via electrical connections at a first surface of the nanotube element. The nanotube element includes first and second regions having resistance states that are independently adjustable in response to electrical stimuli, wherein the first and second regions nonvolatilely retain the resistance states. Arrays of such electrical devices can be formed as nonvolatile memory devices. Methods for fabricating such devices are also disclosed.
摘要翻译：电气装置包括基板; 第一和第二活跃区域; 布置在第一平面中的第一和第二字线; 第一和第二位线在第二平面中并且与第一和第二有效区域电连通; 以及设置在第三平面中的参考线。设置在第四平面中的纳米管元件通过在纳米管元件的第一表面处的电连接与第一和第二有源区域和参考线路电连通。纳米管元件包括具有响应于电刺激可独立调节的电阻状态的第一和第二区域，其中第一和第二区域非常地保持电阻状态。这种电气装置的阵列可以形成为非易失性存储装置。还公开了制造这种装置的方法。

79. 发明授权

US07782652B2 Volatile nanotube-based switching elements with multiple controls 有权
标题翻译：基于挥发性纳米管的开关元件与多个控制
公开(公告)号：US07782652B2
公开(公告)日：2010-08-24
申请号：US12246009
申请日：2008-10-06
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： G11C11/00
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/708 , Y10S977/932 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. The control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element. The control and release may be used to form a differential input, or if the device is constructed appropriately to operate the circuit in a non-volatile manner. The switching elements may be arranged into logic circuits and latches having differential inputs and/or non-volatile behavior.
摘要翻译：基于纳米管的开关元件具有由此制成的多个控制和电路。开关元件包括输入节点，输出节点和具有至少一个导电纳米管的纳米管通道元件。相对于纳米管通道元件设置控制结构，以可控地形成和取消所述输入节点和所述输出节点之间的导电通道。输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。控制结构包括设置在纳米管通道元件的相对侧上的控制电极和释放电极。控制和释放可用于形成差分输入，或者如果该装置被适当地构造以以非易失性方式操作电路。开关元件可以被布置成具有差分输入和/或非易失性行为的逻辑电路和锁存器。

80. 发明授权

US07777222B2 Nanotube device structure and methods of fabrication 有权
标题翻译：纳米管器件结构及其制造方法
公开(公告)号：US07777222B2
公开(公告)日：2010-08-17
申请号：US12548131
申请日：2009-08-26
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L35/24 , H01L51/00 , H01L41/00 , H03H9/00
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , H01H1/0094 , H01H1/027 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/725 , Y10S977/733 , Y10S977/755 , Y10S977/938 , Y10T29/49105
摘要： Nanotube device structures and methods of fabrication. A method of making a nanotube switching element includes forming a first structure having at a first output electrode; forming second structure having a second output electrode; forming a conductive article having at least one nanotube, the article having first and second ends; positioning the conductive article between said first and second structures such that the first structure clamps the first and second ends of the article to the second structure, and such that the first and second output electrodes are opposite each other with the article positioned therebetween; providing at least one signal electrode in electrical communication with the conductive article; and providing at least one control electrode in spaced relation to the conductive article such that the control electrode may control the conductive article to form a conductive pathway between the signal electrode and the first output electrode.
摘要翻译：纳米管器件结构和制造方法。制造纳米管开关元件的方法包括：形成具有第一输出电极的第一结构; 形成具有第二输出电极的第二结构; 形成具有至少一个纳米管的导电制品，所述制品具有第一和第二端; 将导电制品定位在所述第一和第二结构之间，使得第一结构将制品的第一和第二端夹持到第二结构，并且使得第一和第二输出电极彼此相对，物品位于它们之间; 提供至少一个与所述导电制品电连通的信号电极; 以及提供与所述导电制品间隔开的至少一个控制电极，使得所述控制电极可以控制所述导电制品以在所述信号电极和所述第一输出电极之间形成导电路径。

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