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71. 发明申请

US20050037533A1 Method of controlling a capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor 有权
标题翻译：控制薄膜晶体管液晶显示器（TFT-LCD）存储电容器的电容的方法
公开(公告)号：US20050037533A1
公开(公告)日：2005-02-17
申请号：US10934014
申请日：2004-09-03
申请人： Chih-Yu Peng , Wei-Chuan Lin , Chian-Chih Hsiao , Ta-Ko Chuang , Chun-Hung Chu , Chih-Lung Lin , Chin-Mao Lin
发明人： Chih-Yu Peng , Wei-Chuan Lin , Chian-Chih Hsiao , Ta-Ko Chuang , Chun-Hung Chu , Chih-Lung Lin , Chin-Mao Lin
IPC分类号： G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L29/423 , H01L21/00
CPC分类号： H01L27/1248 , G02F1/136213 , H01L27/1255 , H01L29/42384
摘要： A method of controlling the capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor is disclosed. In certain embodiments, the method includes i) forming an undoped amorphous silicon layer on a silicon nitride layer, ii) forming an etching mask on the undoped amorphous silicon layer, and iii) forming two doped amorphous silicon layers on portion of the undoped amorphous silicon layer and the etching mask, the two doped amorphous silicon layers being spaced apart and located on either side of the gate, wherein an etching selectivity ratio of the undpoed and doped amorphous silicon layers over the dielectric layer being not less than about 5.0.
摘要翻译：公开了一种控制薄膜晶体管液晶显示器（TFT-LCD）存储电容器的电容的方法。在某些实施例中，该方法包括：i）在氮化硅层上形成未掺杂的非晶硅层，ii）在未掺杂的非晶硅层上形成蚀刻掩模，以及iii）在未掺杂的非晶硅的部分上形成两个掺杂非晶硅层层和蚀刻掩模，两个掺杂的非晶硅层间隔开并位于栅极的任一侧，其中在电介质层上的未掺杂和掺杂的非晶硅层的蚀刻选择率不小于约5.0。

72. 发明申请

US20050032263A1 Method of controlling a capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor 有权
标题翻译：控制薄膜晶体管液晶显示器（TFT-LCD）存储电容器的电容的方法
公开(公告)号：US20050032263A1
公开(公告)日：2005-02-10
申请号：US10934242
申请日：2004-09-03
申请人： Chih-Yu Peng , Wei-Chuan Lin , Chian-Chih Hsiao , Ta-Ko Chuang , Chun-Hung Chu , Chih-Lung Lin , Chin-Mao Lin
发明人： Chih-Yu Peng , Wei-Chuan Lin , Chian-Chih Hsiao , Ta-Ko Chuang , Chun-Hung Chu , Chih-Lung Lin , Chin-Mao Lin
IPC分类号： G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L29/423 , H01L21/00
CPC分类号： H01L27/1248 , G02F1/136213 , H01L27/1255 , H01L29/42384
摘要： A method of controlling the capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor is disclosed. In certain embodiments, the method includes i) forming a silicon island and a bottom electrode on the transparent substrate, the silicon island having an undoped region located on the central portion, and two doped regions respectively located on both sides, ii) forming a first silicon nitride layer on the transparent substrate, and iii) forming a stacked layer comprising a second silicon nitride layer and a conductive layer on the undoped region of the silicon island, and the first conductive layer of the stacked layer serving as a gate of a thin film transistor, wherein an etching selectivity ratio of the conductive layer over the dielectric layer is not less than about 5.0.
摘要翻译：公开了一种控制薄膜晶体管液晶显示器（TFT-LCD）存储电容器的电容的方法。在某些实施例中，该方法包括：i）在透明基底上形成硅岛和底部电极，硅岛具有位于中心部分上的未掺杂区域，以及分别位于两侧的两个掺杂区域，ii）形成第一氮化硅层，以及iii）在所述硅岛的未掺杂区域上形成包括第二氮化硅层和导电层的堆叠层，并且所述层叠层的第一导电层用作薄的栅极薄膜晶体管，其中导电层在电介质层上的蚀刻选择率不小于约5.0。

73. 发明申请

US20050023533A1 Thin film transistor array substrate 有权
标题翻译：薄膜晶体管阵列基板
公开(公告)号：US20050023533A1
公开(公告)日：2005-02-03
申请号：US10932828
申请日：2004-09-02
申请人： Chih-Yu Peng , Wei-Chuan Lin , Chian-Chih Hsiao , Ta-Ko Chuang , Chun-Hung Chu , Chih-Lung Lin , Chin-Mao Lin
发明人： Chih-Yu Peng , Wei-Chuan Lin , Chian-Chih Hsiao , Ta-Ko Chuang , Chun-Hung Chu , Chih-Lung Lin , Chin-Mao Lin
IPC分类号： G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L29/423 , H01L29/04
CPC分类号： H01L27/1248 , G02F1/136213 , H01L27/1255 , H01L29/42384
摘要： A thin film transistor array substrate of a thin film transistor liquid crystal display (TFT-LCD) is provided. The gate dielectric layer of the TFT includes a silicon nitride layer, a dielectric layer and a silicon nitride layer, and the etching selectivity of the amorphous silicon layer over the dielectric layer is not less than about 5.0. Therefore, the dielectric layer can be an etching stop layer when doped and undoped amorphous silicon layers are etched to form source/drain stacked layers or a conductive layer is etched to form a gate on the gate dielectric layer. Hence, the dielectric layer thickness can be controlled, and thereby the capacitance of the storage capacitor can be controlled.
摘要翻译：提供薄膜晶体管液晶显示器（TFT-LCD）的薄膜晶体管阵列基板。 TFT的栅介质层包括氮化硅层，电介质层和氮化硅层，并且非晶硅层在电介质层上的蚀刻选择性不小于约5.0。因此，当掺杂和非掺杂非晶硅层被蚀刻以形成源极/漏极堆叠层时，介电层可以是蚀刻停止层，或蚀刻导电层以在栅极介电层上形成栅极。因此，可以控制介电层厚度，从而可以控制存储电容器的电容。

74. 发明授权

US06338668B1 In-line chemical mechanical polish (CMP) planarizing method employing interpolation and extrapolation 有权
标题翻译：采用插值和外插法的在线化学机械抛光（CMP）平面化方法
公开(公告)号：US06338668B1
公开(公告)日：2002-01-15
申请号：US09639864
申请日：2000-08-16
申请人： Chih-Lung Lin , Wen-Cheng Chien
发明人： Chih-Lung Lin , Wen-Cheng Chien
IPC分类号： B24B4900
CPC分类号： B24B37/013 , B24B37/042 , B24B49/03
摘要： Within a chemical mechanical polish (CMP) method there is first provided a first control substrate, a first series of product substrates and a second control substrate. There is then sequentially chemical mechanical polish (CMP) planarized, while employing a chemical mechanical polish (CMP) planarizing method, the first control substrate to provide a planarized first control substrate, the first series of product substrates to provide a planarized first series of product substrates and the second control substrate to provide a planarized second control substrate. There is then determined, for the planarized first control substrate and the planarized second control substrate, a corresponding first value of a parameter within the chemical mechanical polish (CMP) planarizing method and a corresponding second value of the parameter within the chemical mechanical polish (CMP) planarizing method. There may then be interpolated or extrapolated from the first value of the parameter and the second value of the parameter to provide an interpolated value of the parameter for a planarized first product substrate within the planarized first series of product substrates or an extrapolated value of the parameter which may be employed for planarizing with enhanced uniformity a second product substrate within a second series of product substrates.
摘要翻译：在化学机械抛光（CMP）方法中，首先提供第一控制基板，第一系列产品基板和第二控制基板。然后依次进行化学机械抛光（CMP）平面化，同时采用化学机械抛光（CMP）平面化方法，第一控制基板提供平面化的第一控制基板，第一系列产品基板提供平面化的第一系列产品基板和第二控制基板，以提供平坦化的第二控制基板。然后，对于平坦化的第一控制基板和平坦化的第二控制基板，确定在化学机械抛光（CMP）平面化方法内的参数的对应的第一值和化学机械抛光（CMP）内的参数的对应的第二值）平面化方法。然后可以从参数的第一值和参数的第二值进行内插或外插，以提供平面化的第一系列产品基板内的平面化第一产品基板的参数的内插值，或参数的外推值其可以用于在第二系列产品基底内以均匀化的平面化第二产品基底。

75. 发明授权

US06315635B1 Method and apparatus for slurry temperature control in a polishing process 有权
标题翻译：抛光过程中浆料温度控制的方法和装置
公开(公告)号：US06315635B1
公开(公告)日：2001-11-13
申请号：US09283382
申请日：1999-03-31
申请人： Chih-Lung Lin
发明人： Chih-Lung Lin
IPC分类号： B24B4902
CPC分类号： B24B37/015 , B24B57/02
摘要： A method and an apparatus for controlling slurry temperature in a polishing machine, such as in a chemical mechanical polishing machine, are disclosed. In the method, an ambient temperature slurry is first provided to the surface of a polishing pad, the polishing process is then started with the polishing pad being rotated and intimately engaging a substrate mounted in a polishing head. By using at least two temperature sensors, the temperature of the slurry dispensed and the temperature of the polishing head are determined and sent to a temperature controller which in turn sends a signal to a heater for heating a slurry supply such that the temperature of the slurry being fed is the same as the temperature of the polishing pad. A heated slurry solution at substantially the same temperature of the polishing pad is then fed to the polishing pad for continuing the polishing process. The present invention novel apparatus includes at least two temperature sensors, a temperature controller and a heater or heat exchanger means for increasing the temperature of a slurry solution before it is fed to a polishing process.
摘要翻译：公开了一种用于控制抛光机中的浆料温度的方法和装置，例如在化学机械抛光机中。在该方法中，首先将环境温度浆料提供到抛光垫的表面，然后在抛光垫旋转并与安装在抛光头中的基板紧密接合的情况下开始抛光过程。通过使用至少两个温度传感器，分配的浆料的温度和抛光头的温度被确定并发送到温度控制器，温度控制器又将信号发送到用于加热浆料供应的加热器，使得浆料的温度被馈送与抛光垫的温度相同。然后在抛光垫的基本相同的温度下将加热的浆料溶液供给到抛光垫中，以继续抛光过程。本发明的新型装置包括至少两个温度传感器，温度控制器和加热器或热交换器装置，用于在将浆液提供给抛光过程之前提高浆液的温度。

76. 发明授权

US09856416B2 Phosphor and light emitting device 有权
公开(公告)号：US09856416B2
公开(公告)日：2018-01-02
申请号：US13158931
申请日：2011-06-13
申请人： Yuan-Ren Juang , Jen-Shrong Uen , Chih-Lung Lin
发明人： Yuan-Ren Juang , Jen-Shrong Uen , Chih-Lung Lin
IPC分类号： C09K11/08 , C09K11/77 , H01L33/50
CPC分类号： C09K11/0883 , C09K11/7734 , H01L33/502 , H01L2224/48091 , H01L2224/48247 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： The present invention provides a phosphor, including a constituent having the formula CapSrqMmAaBbOtNn:Zr, in which M selected from the group consisting of magnesium, barium, beryllium and zinc; A selected from the group consisting of aluminum, gallium, indium, scandium, yttrium, lanthanum, gadolinium and lutetium; B selected from the group consisting of silicon, germanium, tin, titanium, zirconium and hafnium; Z selected from the group consisting of europium and cerium; 0

77. 发明授权

US09571856B2 Conversion operations in scalable video encoding and decoding 有权
标题翻译：可扩展视频编码和解码中的转换操作
公开(公告)号：US09571856B2
公开(公告)日：2017-02-14
申请号：US12197922
申请日：2008-08-25
申请人： Shijun Sun , Shankar Regunathan , Chengjie Tu , Chih-Lung Lin
发明人： Shijun Sun , Shankar Regunathan , Chengjie Tu , Chih-Lung Lin
IPC分类号： H04N7/12 , H04N19/59 , H04N19/149 , H04N19/117 , H04N19/186 , H04N19/187 , H04N19/33 , H04N19/86 , H04N19/40
CPC分类号： H04N19/59 , H04N19/117 , H04N19/149 , H04N19/186 , H04N19/187 , H04N19/33 , H04N19/40 , H04N19/86
摘要： Techniques and tools for conversion operations between modules in a scalable video encoding tool or scalable video decoding tool are described. For example, given reconstructed base layer video in a low resolution format (e.g., 4:2:0 video with 8 bits per sample) an encoding tool and decoding tool adaptively filter the reconstructed base layer video and upsample its sample values to a higher sample depth (e.g., 10 bits per sample). The tools also adaptively scale chroma samples to a higher chroma sampling rate (e.g., 4:2:2). The adaptive filtering and chroma scaling help reduce energy in inter-layer residual video by making the reconstructed base layer video closer to input video, which typically makes compression of the inter-layer residual video more efficient. The encoding tool also remaps sample values of the inter-layer residual video to adjust dynamic range before encoding, and the decoding tool performs inverse remapping after decoding.
摘要翻译：描述了可扩展视频编码工具或可扩展视频解码工具中的模块之间的转换操作的技术和工具。例如，给定以低分辨率格式的重建基层视频（例如，具有每个样本8位的4：2：0视频），编码工具和解码工具自适应地过滤重建的基层视频并将其样本值上采样到较高的样本深度（例如每个样本10位）。这些工具还可以自适应地将色度样本缩放到更高的色度采样率（例如4：2：2）。自适应滤波和色度缩放有助于通过使重构的基本层视频更接近输入视频来减少层间残留视频中的能量，这通常使得层间残留视频的压缩更有效。编码工具还重新映射层间残差视频的采样值，以便在编码之前调整动态范围，并且解码工具在解码之后执行反向重新映射。

78. 发明授权

US09313509B2 DC coefficient signaling at small quantization step sizes 有权
标题翻译：小量化步长的直流系数信号
公开(公告)号：US09313509B2
公开(公告)日：2016-04-12
申请号：US12815029
申请日：2010-06-14
申请人： Chih-Lung Lin , Shankar Regunathan , Sridhar Srinivasan
发明人： Chih-Lung Lin , Shankar Regunathan , Sridhar Srinivasan
IPC分类号： H04N7/12 , H04N11/02 , H04N11/04 , H04N19/17 , H04N19/176 , H04N19/70 , H04N19/46 , H04N19/61 , H04N19/124 , H04N19/126 , H04N19/136 , H04N19/137 , H04N19/18
CPC分类号： H04N19/18 , H04N19/124 , H04N19/126 , H04N19/136 , H04N19/137 , H04N19/17 , H04N19/176 , H04N19/184 , H04N19/186 , H04N19/44 , H04N19/46 , H04N19/61 , H04N19/625 , H04N19/70 , H04N19/91
摘要： Described tools and techniques relate to signaling for DC coefficients at small quantization step sizes. The techniques and tools can be used in combination or independently. For example, a tool such as a video encoder or decoder processes a VLC that indicates a DC differential for a DC coefficient, a FLC that indicates a value refinement for the DC differential, and a third code that indicates the sign for the DC differential. Even with the small quantization step sizes, the tool uses a VLC table with DC differentials for DC coefficients above the small quantization step sizes. The FLCs for DC differentials have lengths that vary depending on quantization step size.
摘要翻译：描述的工具和技术涉及在小量化步长下用于DC系数的信令。技术和工具可以组合使用或独立使用。例如，诸如视频编码器或解码器的工具处理指示DC系数的DC差分的VLC，指示DC差分的值细化的FLC以及指示DC差分的符号的第三代码。即使使用较小的量化步长，该工具也会使用具有DC系数的直流差分的VLC表，其高于小量化步长。用于DC差分的FLC具有随量化步长变化的长度。

79. 发明授权

US09313501B2 Use of frame caching to improve packet loss recovery 有权
公开(公告)号：US09313501B2
公开(公告)日：2016-04-12
申请号：US13614453
申请日：2012-09-13
申请人： Chih-Lung Lin , Minghui Xia , Pohsiang Hsu , Shankar Regunathan , Thomas W. Holcomb
发明人： Chih-Lung Lin , Minghui Xia , Pohsiang Hsu , Shankar Regunathan , Thomas W. Holcomb
IPC分类号： H04N19/164 , H04N19/89 , H04N19/172 , H04N19/46 , H04N19/61 , H04N19/103 , H04N19/166 , H04N19/573 , H04N19/169
CPC分类号： H04N19/89 , H04N19/103 , H04N19/124 , H04N19/166 , H04N19/172 , H04N19/188 , H04N19/46 , H04N19/573 , H04N19/61 , H04N19/91
摘要： Various new and non-obvious apparatus and methods for using frame caching to improve packet loss recovery are disclosed. One of the disclosed embodiments is a method for using periodical and synchronized frame caching within an encoder and its corresponding decoder. When the decoder discovers packet loss, it informs the encoder which then generates a frame based on one of the shared frames stored at both the encoder and the decoder. When the decoder receives this generated frame it can decode it using its locally cached frame.

80. 发明授权

US08815123B2 Fabrication method for ibiiiavia-group amorphous compound and ibiiiavia-group amorphous precursor for thin-film solar cells 有权
标题翻译：用于薄膜太阳能电池的ibiiiavia-group无定形化合物和ibiiiavia-group无定形前体的制造方法
公开(公告)号：US08815123B2
公开(公告)日：2014-08-26
申请号：US12418591
申请日：2009-04-04
申请人： Yu Huang , Chiou Yen Chiou , Bing Joe Hwang , Hsuan-Fu Wang , Shih-Hong Chang , Chih-Lung Lin , Chih-Chung Wu
发明人： Yu Huang , Chiou Yen Chiou , Bing Joe Hwang , Hsuan-Fu Wang , Shih-Hong Chang , Chih-Lung Lin , Chih-Chung Wu
IPC分类号： H01B1/00 , H01B1/12 , B05D5/12 , C08F2/46 , C08J7/18 , B21D53/06 , B21K21/00 , B23P15/26 , C23C16/00 , H01L21/02 , C01B19/00 , H01L31/032 , H01B1/02
CPC分类号： C01B19/002 , C01B19/007 , C01B19/008 , C01P2002/30 , C01P2002/72 , C01P2002/85 , C01P2004/03 , C01P2004/52 , H01B1/026 , H01L21/02565 , H01L21/02568 , H01L21/0259 , H01L21/02628 , H01L31/0322 , Y02E10/541 , Y10T29/49355
摘要： A method for fabricating an IBIIIAVIA-group amorphous compound used for thin-film solar cells is provided. A mixture solution including elements of Group IB, IIIA, VIA or combinations thereof is provided. The mixture solution is heated and filtered. IBIIIAVIA-group amorphous powders are acquired after drying the heated and filtered mixture solution.
摘要翻译：提供了一种用于制造用于薄膜太阳能电池的IBIIIAVIA-组非晶化合物的方法。提供了包含IB，IIIA，VIA族元素或其组合的混合溶液。将混合溶液加热并过滤。干燥加热过滤的混合溶液后获得IBIIIAVIA-组无定形粉末。

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