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71. 发明申请

US20090193167A1 ARBITRATION DEVICE AND METHOD 有权
标题翻译：仲裁设备和方法
公开(公告)号：US20090193167A1
公开(公告)日：2009-07-30
申请号：US12358975
申请日：2009-01-23
申请人： Yi-Chou Chen
发明人： Yi-Chou Chen
IPC分类号： G06F13/18
CPC分类号： G09G5/001 , G09G5/14 , G09G2360/06
摘要： An arbitration device receives a plurality of requests from a plurality of circuits, and grants access to one of the plurality of circuits. The arbitration device includes a sorter and an arbitrator. The sorter receives position information of an image signal including a plurality of image layers and determines an access priority including a first group and a second group according to the position information. The arbitrator receives the access priority and at least one of the plurality of requests, and grants the access to one of the plurality of circuits according to the access priority and the at least one of the plurality of requests. In addition, each of the plurality of circuits generates data for each of the image layers correspondingly.
摘要翻译：仲裁装置从多个电路接收多个请求，并且允许对多个电路之一的接入。仲裁装置包括分拣机和仲裁员。分类器接收包括多个图像层的图像信号的位置信息，并根据位置信息确定包括第一组和第二组的访问优先级。所述仲裁器接收所述接入优先级和所述多个请求中的至少一个请求，并且根据所述接入优先级和所述多个请求中的所述至少一个来授权对所述多个电路之一的接入。此外，多个电路中的每一个相应地产生每个图像层的数据。

72. 发明申请

US20090154222A1 OPERATION METHOD FOR MULTI-LEVEL SWITCHING OF METAL-OXIDE BASED RRAM 有权
标题翻译：基于金属氧化物的RRAM的多级开关操作方法
公开(公告)号：US20090154222A1
公开(公告)日：2009-06-18
申请号：US12388655
申请日：2009-02-19
申请人： Wei-Chih Chien , Kuo-Pin Chang , Yi-Chou Chen , Erh-Kun Lai , Kuang-Yeu Hsieh
发明人： Wei-Chih Chien , Kuo-Pin Chang , Yi-Chou Chen , Erh-Kun Lai , Kuang-Yeu Hsieh
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C11/14 , G11C11/54 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/009 , G11C2213/32 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1633
摘要： Memory devices and methods for operating such devices are described herein. A method as described herein for operating a memory device includes applying a sequence of bias arrangements across a selected metal-oxide memory element to change the resistance state from a first resistance state in a plurality of resistance states to a second resistance state in the plurality of resistance states. The sequence of bias arrangements comprise a first set of one or more pulses to change the resistance state of the selected metal-oxide memory element from the first resistance state to a third resistance state, and a second set of one or more pulses to change the resistance state of the selected metal-oxide memory element from the third resistance state to the second resistance state.
摘要翻译：这里描述了用于操作这样的设备的存储器件和方法。本文描述的用于操作存储器件的方法包括：在所选择的金属氧化物存储元件上施加偏置布置序列，以将电阻状态从多个电阻状态中的第一电阻状态改变为多个电阻状态中的第二电阻状态阻力状态。偏置装置的顺序包括一个或多个脉冲的第一组，以将所选择的金属氧化物存储元件的电阻状态从第一电阻状态改变到第三电阻状态;以及第二组一个或多个脉冲，以改变所选择的金属氧化物存储元件从第三电阻状态到第二电阻状态的电阻状态。

73. 发明申请

US20080186755A1 MEMORY CELL DEVICE AND PROGRAMMING METHODS 有权
标题翻译：存储单元设计与编程方法
公开(公告)号：US20080186755A1
公开(公告)日：2008-08-07
申请号：US11777195
申请日：2007-07-12
申请人： Hsiang Lan Lung , Yi-Chou Chen
发明人： Hsiang Lan Lung , Yi-Chou Chen
IPC分类号： G11C11/00
CPC分类号： G11C13/0061 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/0092
摘要： A memory device including a memory cell comprising phase change material is described along with methods for programming the memory device. A method for programming disclosed herein includes determining a data value for the memory cell, and applying a pulse pair to store the data value. The pulse pair includes an initial pulse having a pulse shape adapted to preset the phase change material in the memory cell to a normalizing resistance state, and a subsequent pulse having a pulse shape adapted to set the phase change material from the normalizing resistance state to a resistance corresponding to the determined data value.
摘要翻译：包括包括相变材料的存储单元的存储器件与用于编程存储器件的方法一起被描述。本文公开的编程方法包括确定存储单元的数据值，以及应用脉冲对来存储数据值。所述脉冲对包括具有脉冲形状的初始脉冲，所述脉冲形状适于将所述存储器单元中的相变材料预设为归一化电阻状态，以及具有脉冲形状的后续脉冲，其适于将所述相变材料从所述归一化电阻状态设置为对应于确定的数据值的电阻。

74. 发明授权

US07138687B2 Thin film phase-change memory 有权
公开(公告)号：US07138687B2
公开(公告)日：2006-11-21
申请号：US10764750
申请日：2004-01-26
申请人： Hsiang-Lan Lung , Yi-Chou Chen
发明人： Hsiang-Lan Lung , Yi-Chou Chen
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： G11C13/0069 , G11C13/0004 , G11C2013/0071 , G11C2013/0078 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/1226 , H01L45/1675 , H01L45/1691
摘要： A memory cell comprises a chalcogenide random access memory (CRAM) cell and a CMOS circuit. The CMOS circuit accesses the CRAM cell. The CRAM cell has a cross-sectional area that is determined by a thin film process (e.g., a chalcogenide deposition thin film process) and by an iso-etching process. If desired, the chalcogenide structure may be implemented in series with a semiconductor device such as a diode or a selecting transistor. The diode drives a current through the chalcogenide structure. The selecting transistor drives a current through the chalcogenide structure when enabled by a voltage at a gate terminal of the selecting transistor. The selecting transistor has a gate terminal, a source terminal, and a drain terminal; the gate terminal may be operatively coupled to a word line of a memory array, the source terminal may be operatively coupled to a drive line of the memory array, and the drain terminal may be operatively coupled to a bit line of the memory array.

75. 发明申请

US20050062087A1 Chalcogenide phase-change non-volatile memory, memory device and method for fabricating the same 审中-公开
标题翻译：硫族化物相变非易失性存储器，存储器件及其制造方法
公开(公告)号：US20050062087A1
公开(公告)日：2005-03-24
申请号：US10817579
申请日：2004-04-02
申请人： Yi-Chou Chen , Hsiang-Lan Lung
发明人： Yi-Chou Chen , Hsiang-Lan Lung
IPC分类号： G11C16/02 , H01L27/24 , H01L45/00 , H01L29/02
CPC分类号： G11C13/0004 , G11C2213/79 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/165 , H01L45/1658
摘要： A memory device adapted to a chalcogenide phase-change memory is disclosed. The memory device comprises a top electrode, a bottom electrode, and a phase-change thin film between the top electrode and the bottom electrode. The phase-change thin film is a chalcogenide (Ge-Sb-Te) alloy doped with Tin (Sn) therein. Tin (Sn) doped in the chalcogenide (Ge-Sb-Te) alloy can enhance the crystallization rate of the phase-change thin film for improving the operation speed of the memory.
摘要翻译：公开了一种适用于硫族化物相变存储器的存储器件。存储器件包括顶电极，底电极和位于顶电极和底电极之间的相变薄膜。相变薄膜是其中掺杂有锡（Sn）的硫族化物（Ge-Sb-Te）合金。在硫族化物（Ge-Sb-Te）合金中掺杂的锡（Sn）可以提高相变薄膜的结晶速率，以提高存储器的操作速度。

76. 发明申请

US20210085109A1 ENVIRONMENTALLY FRIENDLY STRAW FOR EASY DISASSEMBLY 有权
公开(公告)号：US20210085109A1
公开(公告)日：2021-03-25
申请号：US17020779
申请日：2020-09-14
申请人： Yi-Chou Chen
发明人： Yi-Chou Chen
IPC分类号： A47G21/18
摘要： An environmentally friendly straw for easy disassembly includes a first straw half body and a second straw half body. The first straw half body has a first extended part that extends from the bottom of the first straw half body. The second straw half body has a second extended part that extends from the bottom of the second straw half body. The second straw half body is detachably coupled to the first straw half body to commonly form a hollow tubular body. The first straw half body is separated from the second straw half body when an external force is applied to the first extended part and the second extended part, respectively.

77. 发明申请

US20160239822A1 MOBILE GROUP-BUYING SYSTEM AND ITS IMPLEMENTING METHOD 审中-公开
标题翻译：移动集团购买系统及其实施方法
公开(公告)号：US20160239822A1
公开(公告)日：2016-08-18
申请号：US14837601
申请日：2015-08-27
申请人： Yi-Chou Chen
发明人： Yi-Chou Chen
IPC分类号： G06Q20/32
CPC分类号： G06Q20/322 , G06Q20/102 , G06Q30/06
摘要： A mobile group-buying system and its implementing method comprises a group-buying server and a plurality of mobile communication devices. Each of the mobile communication device is individually installed a group-buying APP the execution of which can allow at least two mobile group-buying devices to be connected together to form a group-buying group. Further, initiator of the buying group can create a group-buying information through the group-buying APP, and the group-buying information is issued to each participant of the buying group so as to perform group-buying. Furthermore, the group-buying server records group-buying behavior of each mobile communication device and generates a group-buying record list. Thus, the present invention enables users actively launch a group-buying to specific commodity, so as to improve the problem of limitation on commodity selection imposed in conventional group-buying system.
摘要翻译：移动组购买系统及其实现方法包括组购买服务器和多个移动通信设备。每个移动通信设备被单独安装一组购买APP，其执行可允许至少两个移动组购买设备连接在一起以形成组购买组。此外，购买组的发起者可以通过组购买APP创建组购买信息，并且向购买组的每个参与者发行组购买信息，以执行组购买。此外，组购买服务器记录每个移动通信设备的组购买行为，并生成组购买记录列表。因此，本发明使得用户能够积极地向特定商品进行集体购买，从而改进了传统集团购买系统中强加的商品选择的限制问题。

78. 发明授权

US09368046B2 Color tactile vision system 有权
标题翻译：彩色触觉视觉系统
公开(公告)号：US09368046B2
公开(公告)日：2016-06-14
申请号：US12836498
申请日：2010-07-14
申请人： Yi-Chou Chen , Shih Hung Chen , Yu-Yu Lin , Tung-Hua Chuang
发明人： Yi-Chou Chen , Shih Hung Chen , Yu-Yu Lin , Tung-Hua Chuang
IPC分类号： H04N9/47 , G09B21/00
CPC分类号： G09B21/003
摘要： A tactile display writer unit includes a probe having a contact tip, and at least a first actuator and a second actuator coupled to the probe, whereby activation of the actuators results in a displacement of the probe tip in one or more of a z-direction and in a lateral direction having a vector in an x-y plane. Also, a display writer includes a plurality of such units supported in an x-y array. The writer units may have a third actuator coupled to the probe. Also, a tactile vision system includes such a display writer, an image processor, and an image sensor. The processor transforms RGB image information from the image sensor into hue-based information having two or more attributes; and the actuators in the tactile display writer are activated by the information attributes. Also, a method for producing a tactile color stimulus at a site on the skin of a subject includes providing a probe having a contact tip; displacing the tip at the contact site in a direction generally normal to the skin surface at the site to an extent that relates one attribute of a hue-based model of the color, and displacing the tip in at least one lateral direction generally in a plane parallel to the skin surface at the site to an extent that relates to at least one additional attribute of the color.
摘要翻译：触觉显示写入器单元包括具有接触尖端的探针，以及耦合到探针的至少第一致动器和第二致动器，由此激活致动器导致探针尖端在z方向上的一个或多个中的位移并且在具有xy平面中的向量的横向方向上。此外，显示器写入器包括以x-y阵列支持的多个这样的单元。写入器单元可以具有耦合到探针的第三致动器。此外，触觉系统包括这样的显示写入器，图像处理器和图像传感器。处理器将RGB图像信息从图像传感器转换为具有两个或多个属性的基于色相的信息; 并且触觉显示写入器中的致动器被信息属性激活。此外，用于在被检体的皮肤上的部位产生触觉刺激的方法包括提供具有接触尖端的探针; 将位于接触位置处的尖端沿着与现场的皮肤表面大致垂直的方向移位到与颜色的基于色相的模型的一个属性相关联的程度，并且将尖端沿至少一个横向方向大致在平面中移位平行于该部位的皮肤表面至与颜色的至少一个附加属性有关的程度。

79. 发明授权

US08916845B2 Low operational current phase change memory structures 有权
标题翻译：低工作电流相变存储器结构
公开(公告)号：US08916845B2
公开(公告)日：2014-12-23
申请号：US13324946
申请日：2011-12-13
申请人： Shih-Hung Chen , Yi-Chou Chen
发明人： Shih-Hung Chen , Yi-Chou Chen
IPC分类号： H01L47/00 , H01L45/00 , H01L27/24
CPC分类号： H01L45/122 , H01L27/2436 , H01L45/06 , H01L45/12 , H01L45/1226 , H01L45/1233 , H01L45/1293 , H01L45/144 , H01L45/1616 , H01L45/1641 , H01L45/1675 , Y10S977/943
摘要： Memory cells described herein have an increased current density at lateral edges of the active region compared to that of conventional mushroom-type memory cells, resulting in improved operational current efficiency. As a result, the amount of heat generated within the lateral edges per unit value of current is increased relative to that of conventional mushroom-type memory cells. Therefore, the amount of current needed to induce phase change is reduced.
摘要翻译：与传统的蘑菇型存储器单元相比，本文所述的存储单元在有源区域的横向边缘处具有增加的电流密度，从而提高了操作电流效率。结果，相对于传统的蘑菇型存储单元，每单位电流值在横向边缘内产生的热量增加。因此，引起相变所需的电流量减少。

80. 发明授权

US08907316B2 Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions 有权
标题翻译：具有与多晶和单晶半导体区域的pn结的存储单元访问装置
公开(公告)号：US08907316B2
公开(公告)日：2014-12-09
申请号：US12267453
申请日：2008-11-07
申请人： Hsiang-Lan Lung , Erh-Kun Lai , Yen-Hao Shih , Yi-Chou Chen , Shih-Hung Chen
发明人： Hsiang-Lan Lung , Erh-Kun Lai , Yen-Hao Shih , Yi-Chou Chen , Shih-Hung Chen
IPC分类号： H01L47/00 , H01L45/00 , H01L27/102 , H01L27/24 , H01L29/861 , H01L29/165 , H01L29/04 , G11C13/00
CPC分类号： H01L29/8616 , G11C13/0004 , G11C2213/72 , H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L27/2472 , H01L29/04 , H01L29/165 , H01L29/861 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/142 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/1675 , H01L45/1683
摘要： A memory device includes a driver comprising a pn-junction in the form of a multilayer stack including a first doped semiconductor region having a first conductivity type, and a second doped semiconductor region having a second conductivity type opposite the first conductivity type, the first and second doped semiconductors defining a pn-junction therebetween, in which the first doped semiconductor region is formed in a single-crystalline semiconductor, and the second doped semiconductor region includes a polycrystalline semiconductor. Also, a method for making a memory device includes forming a first doped semiconductor region of a first conductivity type in a single-crystal semiconductor, such as on a semiconductor wafer; and forming a second doped polycrystalline semiconductor region of a second conductivity type opposite the first conductivity type, defining a pn-junction between the first and second regions.
摘要翻译：存储器件包括驱动器，其包括多层堆叠形式的pn结，其包括具有第一导电类型的第一掺杂半导体区域和具有与第一导电类型相反的第二导电类型的第二掺杂半导体区域，第一和第二掺杂半导体，其中限定其间的pn结，其中所述第一掺杂半导体区形成在单晶半导体中，并且所述第二掺杂半导体区包括多晶半导体。此外，制造存储器件的方法包括在半导体晶片上形成单晶半导体中的第一导电类型的第一掺杂半导体区域; 以及形成与所述第一导电类型相反的第二导电类型的第二掺杂多晶半导体区域，限定所述第一和第二区域之间的pn结。

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