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71. 发明申请

US20090009626A1 METHOD AND APPARATUS FOR GENERATING IMAGE FILE HAVING OBJECT INFORMATION 有权
标题翻译：用于生成具有对象信息的图像文件的方法和装置
公开(公告)号：US20090009626A1
公开(公告)日：2009-01-08
申请号：US12029754
申请日：2008-02-12
申请人： Chang-seog Ko , Hyun-cheol Park , Young-sun Kim , Yoo-jin Choi
发明人： Chang-seog Ko , Hyun-cheol Park , Young-sun Kim , Yoo-jin Choi
IPC分类号： H04N5/76 , H04N7/00
CPC分类号： H04N1/32128 , H04N1/00251 , H04N1/2125 , H04N1/2183 , H04N2101/00 , H04N2201/3226 , H04N2201/3247 , H04N2201/3252 , H04N2201/3253 , H04N2201/3269 , H04N2201/3271
摘要： Provided are a method and an apparatus for generating an image file having information about an object. The method of generating the image file having the object information includes the operations of generating image data by taking a picture of the object; receiving the object information from the object through a network; and storing the object information in an image file together with the image data. Accordingly, when a photographing apparatus capable of perform wireless communications generates image data by taking a picture of an object having a wireless communication module, object information is received from the object through wireless communications and is stored together with image data.
摘要翻译：提供了一种用于生成具有关于对象的信息的图像文件的方法和装置。生成具有对象信息的图像文件的方法包括通过拍摄对象的图像来生成图像数据的操作; 通过网络从对象接收对象信息; 并将该对象信息与图像数据一起存储在图像文件中。因此，当能够执行无线通信的拍摄装置通过拍摄具有无线通信模块的对象的图像来生成图像数据时，通过无线通信从对象接收对象信息，并与图像数据一起存储。

72. 发明申请

US20080096340A1 Method of fabricating a nonvolatile memory device 审中-公开
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US20080096340A1
公开(公告)日：2008-04-24
申请号：US11605236
申请日：2006-11-29
申请人： Se-hoon Oh , Han-mei Choi , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim
发明人： Se-hoon Oh , Han-mei Choi , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim
IPC分类号： H01L21/8238
CPC分类号： H01L29/513 , G11C16/0466 , H01L21/02178 , H01L21/0228 , H01L21/3141 , H01L21/31616 , H01L21/3185 , H01L29/40117
摘要： A method of fabricating a nonvolatile memory device includes forming a charge tunneling layer on a semiconductor substrate, forming a charge trapping layer on the charge tunneling layer, forming a charge blocking layer on the charge trapping layer by supplying sequentially a metal source gas and an oxidizing gas onto the charge trapping layer, such that a supplying time of the oxidizing gas is form about 0.1 second to about 1.0 second, and forming a gate electrode layer on the charge blocking layer.
摘要翻译：一种制造非易失性存储器件的方法包括在半导体衬底上形成电荷隧道层，在电荷隧穿层上形成电荷俘获层，在电荷俘获层上形成电荷阻挡层，依次提供金属源气体和氧化气体进入电荷捕获层，使得氧化气体的供给时间形成约0.1秒至约1.0秒，并在电荷阻挡层上形成栅极电极层。

73. 发明申请

US20080048291A1 SEMICONDUCTOR INTERCONNECTION STRUCTURES AND CAPACITORS INCLUDING POLY-SIGE LAYERS AND METAL CONTACT PLUGS, AND METHODS OF FABRICATING THE SAME 有权
标题翻译：半导体互连结构和电容器，包括聚合物层和金属接触片，以及制造它们的方法
公开(公告)号：US20080048291A1
公开(公告)日：2008-02-28
申请号：US11842320
申请日：2007-08-21
申请人： Eun-ae Chung , Ki-sun Kim , Young-sun Kim , Jin-tae Noh
发明人： Eun-ae Chung , Ki-sun Kim , Young-sun Kim , Jin-tae Noh
IPC分类号： H01L29/40 , H01L21/20
CPC分类号： H01L28/75 , H01L21/0237 , H01L21/02381 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02667 , H01L27/10852
摘要： A semiconductor device includes a lower electrode of a capacitor, a dielectric layer disposed on the lower electrode, and an upper electrode of the capacitor disposed on the dielectric layer. The upper electrode includes a doped poly-Si1-xGex layer. An interlayer insulating layer is disposed on the doped poly-Si1-xGex layer and has a contact hole partially exposing the doped poly-Si1-xGex layer. A metal contact plug is in the contact hole and an interconnection layer is disposed on the interlayer insulating layer and connected to the metal contact plug. Related interconnection structures and fabrication methods are also disclosed.
摘要翻译：半导体器件包括电容器的下电极，设置在下电极上的电介质层和设置在电介质层上的电容器的上电极。上电极包括掺杂的多晶硅层1-x层Ge层。层间绝缘层设置在掺杂的多晶硅层上，并且具有部分暴露掺杂的多晶硅1-x层的接触孔 Ge 层。金属接触插塞在接触孔中，并且互连层设置在层间绝缘层上并与金属接触插塞连接。还公开了相关的互连结构和制造方法。

74. 发明申请

US20070040207A1 Electronic devices including dielectric layers with different densities of titanium 审中-公开
标题翻译：包括具有不同密度的钛的电介质层的电子器件
公开(公告)号：US20070040207A1
公开(公告)日：2007-02-22
申请号：US11586291
申请日：2006-10-25
申请人： Gab-jin Nam , Seung-hwan Lee , Ki-chul Kim , Jae-soon Lim , Sung-tae Kim , Young-sun Kim
发明人： Gab-jin Nam , Seung-hwan Lee , Ki-chul Kim , Jae-soon Lim , Sung-tae Kim , Young-sun Kim
IPC分类号： H01L29/00
CPC分类号： H01L21/02186 , C23C16/405 , H01L21/02183 , H01L21/02194 , H01L21/28194 , H01L21/28202 , H01L21/31604 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Methods of forming an electronic device include providing a fist electrode, providing a dielectric oxide layer on the first electrode, and providing a second electrode on the dielectric oxide layer so that the dielectric oxide layer is between the first and second electrodes. More particularly, a first portion of the dielectric oxide layer adjacent the first electrode can have a first density of titanium, and a second portion of the dielectric oxide layer opposite the first electrode can have a second density of titanium different than the first density. Related structures are also discussed.
摘要翻译：形成电子器件的方法包括提供第一电极，在第一电极上提供电介质氧化物层，并在电介质氧化物层上提供第二电极，使得电介质氧化物层位于第一和第二电极之间。更具体地，与第一电极相邻的电介质氧化物层的第一部分可以具有第一密度的钛，并且与第一电极相对的电介质氧化物层的第二部分可具有不同于第一密度的钛的第二密度。还讨论了相关结构。

75. 发明申请

US20070040203A1 Semiconductor device capacitors with oxide-nitride layers and methods of fabricating such capacitors 有权
标题翻译：具有氧化物氮化物层的半导体器件电容器和制造这种电容器的方法
公开(公告)号：US20070040203A1
公开(公告)日：2007-02-22
申请号：US11386660
申请日：2006-03-22
申请人： Jong-cheol Lee , Young-sun Kim , Jung-hee Chung , Jae-hyoung Choi , Se-hoon Oh , Hong-bum Park
发明人： Jong-cheol Lee , Young-sun Kim , Jung-hee Chung , Jae-hyoung Choi , Se-hoon Oh , Hong-bum Park
IPC分类号： H01L27/108
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L28/75
摘要： Capacitors having upper electrodes that include a lower electrode, a dielectric layer and an upper electrode that includes a conductive metal nitride layer and a doped polysilicon germanium layer are provided. At least part of the conductive metal nitride layer is oxidized and/or at least part of the dielectric layer is nitridized.
摘要翻译：提供具有包括下电极，电介质层和包括导电金属氮化物层和掺杂多晶硅锗层的上电极的上电极的电容器。导电金属氮化物层的至少一部分被氧化和/或至少部分介电层被氮化。

76. 发明申请

US20050206588A1 Display apparatus 审中-公开
标题翻译：显示装置
公开(公告)号：US20050206588A1
公开(公告)日：2005-09-22
申请号：US11078662
申请日：2005-03-14
申请人： Jong-sul Min , Hwa-seok Seong , Ho-seop Lee , Young-sun Kim
发明人： Jong-sul Min , Hwa-seok Seong , Ho-seop Lee , Young-sun Kim
IPC分类号： G09F9/313 , G09G3/20 , G09G3/28 , G09G3/294 , G09G5/10 , H01J17/49
CPC分类号： G09G3/2803 , G09G3/2022 , G09G3/2059 , G09G3/288 , G09G3/2946 , G09G2320/0261 , G09G2320/0266 , G09G2320/0271 , G09G2360/16
摘要： A display apparatus with a display part displaying a picture thereon, the display apparatus including a brightness level determiner to determine a brightness level of the video signal and a sub-field coder to change the video signal into a sub-field code word formed as binary data that is sequentially arranged with respect to a plurality of sub-fields and representing a luminescence state of the pixel of the display part at each sub-field, and to output the sub-field code word to the display part. A luminescence pattern generator determines the number of sustaining pulses applied to the plurality of sub-fields forming the frame according to the brightness levels determined by the brightness level determiner, and transmits the sustaining pulses to the display part during a luminescence period of each sub-field until the number of representable gradation levels is equal to the number of sustaining pulses for the frame.
摘要翻译：一种具有在其上显示图像的显示部分的显示装置，所述显示装置包括用于确定视频信号的亮度级的亮度级确定器和将视频信号改变为形成为二进制码的子字段码字的子场编码器相对于多个子场依次配置的数据，表示在各子场的显示部的像素的发光状态，并将子场码字输出到显示部。发光图案发生器根据由亮度电平确定器确定的亮度水平确定施加到形成该帧的多个子场的维持脉冲的数量，并且在每个子像素的发光周期期间将维持脉冲发送到显示部分，直到可表示的灰度级数等于该帧的维持脉冲数。

77. 发明申请

US20050186687A1 Methods of forming capacitors with high dielectric layers and capacitors so formed 有权
标题翻译：形成具有高介电层和电容器的电容器的方法
公开(公告)号：US20050186687A1
公开(公告)日：2005-08-25
申请号：US11002571
申请日：2004-12-02
申请人： Seung-hwan Lee , Jae-dong Byun , Sung-tae Kim , Young-sun Kim , Dal-won Lee , Song-won Ko
发明人： Seung-hwan Lee , Jae-dong Byun , Sung-tae Kim , Young-sun Kim , Dal-won Lee , Song-won Ko
IPC分类号： H01L27/108 , H01L21/00 , H01L21/02 , H01L21/314 , H01L21/8242 , H01L29/94 , H01L31/119
CPC分类号： H01L28/56
摘要： Methods of forming a capacitor of a semiconductor device can include forming a lower electrode of a capacitor on a semiconductor substrate and forming a dielectric material layer of Ba(Ti1-xSnx)O3 (BTS) or Ba(Ti1-xZrx)O3 (BTZ) on the lower electrode. An amorphous layer can be formed on the dielectric material layer. An upper electrode of the capacitor can be formed on the amorphous layer.
摘要翻译：形成半导体器件的电容器的方法可以包括在半导体衬底上形成电容器的下电极并形成Ba（Ti 1-x Sn Sn x x）的介电材料层 3）（3）（BTS）或Ba（Ti 1-x Zr x x）O 3（BTZ）在下电极上。可以在介电材料层上形成非晶层。可以在非晶层上形成电容器的上电极。

78. 发明申请

US20050162087A1 Plasma display panel 审中-公开
标题翻译：等离子显示面板
公开(公告)号：US20050162087A1
公开(公告)日：2005-07-28
申请号：US10965284
申请日：2004-10-15
申请人： Young-sun Kim , Chang-wan Hong , Young-soo Han , Chung-wook Roh , Hye-jeong Kim
发明人： Young-sun Kim , Chang-wan Hong , Young-soo Han , Chung-wook Roh , Hye-jeong Kim
IPC分类号： H01J29/86 , H01J11/24 , H01J11/34 , H01J11/44 , H01J17/16 , H01J29/89 , H01J17/49
CPC分类号： H01J11/44 , H01J11/12 , H01J11/34 , H01J2211/444
摘要： A plasma display panel is provided, including lower and upper substrates separated from each other to form a discharge space therebetween. A plurality of partitions are provided between the lower and upper substrates to partition the discharge space to define the discharge cells, and a plurality of first and second discharge electrodes generate a discharge within the discharge cells. A plurality of fluorescent layers are provided to inner surfaces of the discharge cells, each of the fluorescent layers being exited by the discharge to generate visible rays of light, and a plurality of light shielding elements are provided to the upper substrate to prevent external rays of light from entering the discharge cells, wherein a plurality of light focusing elements provided to the upper substrate focus the visible rays of light generated in the discharge cells and emit the visible light.
摘要翻译：提供了一种等离子体显示面板，包括彼此分离的下基板和上基板，以在它们之间形成放电空间。在下基板和上基板之间设置多个隔板以分隔放电空间以限定放电单元，并且多个第一和第二放电电极在放电单元内产生放电。在放电单元的内表面设有多个荧光层，通过放电来排出各荧光层，生成可见光，多个遮光元件设置在上基板上，以防止外部光线设置在上基板上的多个聚光元件聚焦放电单元中产生的可见光，并发出可见光。

79. 发明授权

US06358672B2 Method of forming semiconductor device pattern including cross-linking and flow baking a positive photoresist 有权
标题翻译：形成半导体器件图案的方法，包括交联和流动烘烤正性光致抗蚀剂
公开(公告)号：US06358672B2
公开(公告)日：2002-03-19
申请号：US09192000
申请日：1998-11-16
申请人： Gyu-chan Jeoung , Kwang-seok Choi , Jin-hang Jung , Young-sun Kim , Hong Lee , Hoe-sik Chung , Sung-ho Lee , Hun-hwan Ha
发明人： Gyu-chan Jeoung , Kwang-seok Choi , Jin-hang Jung , Young-sun Kim , Hong Lee , Hoe-sik Chung , Sung-ho Lee , Hun-hwan Ha
IPC分类号： G03C556
CPC分类号： G03F7/40 , G03F7/2024 , H01L21/308
摘要： There are provided a semiconductor device fabrication system for carrying out a UV-bake on a photoresist pattern in the semiconductor device pattern formation, a method of forming a semiconductor device pattern using the same, and a photoresist formed thereby. The semiconductor device fabrication system includes a photoresist coating unit coating a wafer with a specific photoresist; a developing unit forming a photoresist pattern on the wafer coated with the photoresist; and a cross-linking unit cross-linking the photoresist pattern to provide a stabilized flow during the flow process for the photoresist pattern. The method of forming a semiconductor device pattern includes: coating a wafer with a photoresist; aligning a photo mask on the photoresist, and carrying out an exposure; forming a photoresist pattern on the wafer; carrying out a cross-linking of the photoresist pattern; and carrying out a flow bake for the photoresist pattern after the cross-linking.
摘要翻译：提供了一种用于在半导体器件图案形成中在光致抗蚀剂图案上进行UV烘烤的半导体器件制造系统，使用其形成半导体器件图案的方法和由其形成的光致抗蚀剂。半导体器件制造系统包括用特定光致抗蚀剂涂覆晶片的光致抗蚀剂涂覆单元; 在涂有光致抗蚀剂的晶片上形成光刻胶图案的显影单元; 和交联单元交联光致抗蚀剂图案以在光致抗蚀剂图案的流程过程中提供稳定的流动。形成半导体器件图案的方法包括：用光致抗蚀剂涂覆晶片; 将光掩模对准光致抗蚀剂，并进行曝光; 在晶片上形成光致抗蚀剂图案; 进行光致抗蚀剂图案的交联; 并且在交联之后对光致抗蚀剂图案进行流动烘烤。

80. 发明授权

US5970312A Method for evaluating HSG silicon film of semiconductor device by atomic force microscopy 失效
标题翻译：用原子力显微镜评估半导体器件的HSG硅膜的方法
公开(公告)号：US5970312A
公开(公告)日：1999-10-19
申请号：US12119
申请日：1998-01-22
申请人： Seung-hee Nam , Young-sun Kim
发明人： Seung-hee Nam , Young-sun Kim
IPC分类号： G01R31/265 , H01L21/66
CPC分类号： G01R31/265 , B82Y15/00 , H01L22/12
摘要： An evaluating method of an HSG silicon film using atomic force microscopy (AFM). The characteristics of the HSG silicon film are measured and expressed with quantitative values using AFM. The above values are compared to values written in the working specification, to thereby evaluate the HSG silicon film and control the conditions of forming the HSG silicon film. Also, the capacitor where the HSG silicon film is interposed is formed, and then the capacitance of the capacitor is measured to determine the HSG height of the HSG silicon film for ensuring desired capacitance and conditions of forming the HSG silicon film. Accordingly, the characteristics of the HSG silicon film may be analyzed without damaging the semiconductor substrate and a preferred working specification for forming the HSG silicon film may be realized, to thereby increase the reproducibility of the HSG silicon film. Also, when the conditions of forming the HSG silicon film are determined, it is checked whether the apparatus for forming the HSG silicon film operates normally.
摘要翻译：使用原子力显微镜（AFM）的HSG硅膜的评估方法。使用AFM测量HSG硅膜的特性并用定量值表达。将上述值与工作规范中写入的值进行比较，从而评估HSG硅膜并控制形成HSG硅膜的条件。此外，形成插入HSG硅膜的电容器，然后测量电容器的电容，以确定HSG硅膜的HSG高度，以确保所需的电容和形成HSG硅膜的条件。因此，可以分析HSG硅膜的特性而不损坏半导体衬底，并且可以实现用于形成HSG硅膜的优选工作规范，从而提高HSG硅膜的再现性。此外，当确定形成HSG硅膜的条件时，检查用于形成HSG硅膜的装置是否正常工作。

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