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71. 发明申请

US20050081540A1 System and method for controlling air conditioner 审中-公开
标题翻译：空调控制系统及方法
公开(公告)号：US20050081540A1
公开(公告)日：2005-04-21
申请号：US10929456
申请日：2004-08-31
申请人： Il Hwang , Young Park , Yoon Lee , Dong Yang , Seok Yoon , Jong Park , Sung Choi , Sung Kim
发明人： Il Hwang , Young Park , Yoon Lee , Dong Yang , Seok Yoon , Jong Park , Sung Choi , Sung Kim
IPC分类号： F24F11/02 , F25B13/00 , F25B49/02 , F25B7/00 , F25B1/10 , F25B41/04
CPC分类号： F25B49/022 , F25B13/00 , F25B49/025 , F25B2313/0233 , F25B2313/0253 , F25B2400/06 , F25B2400/075 , F25B2600/021 , F25B2700/2106 , F25B2700/21152 , Y02B30/741
摘要： A system for controlling an air conditioner includes a plurality of outdoor units each having at least one compressor and an outdoor heat exchanger, an indoor unit connected to the outdoor units by a refrigerant tube, the indoor unit having an indoor heat exchanger, and a pressure regulating tube for equalizing pressure according to an operation mode. The pressure regulating tube is connected between the outdoor units.
摘要翻译：一种用于控制空调的系统包括多个室外单元，每个室外单元具有至少一个压缩机和室外热交换器，室内单元通过制冷剂管连接到室外单元，室内单元具有室内热交换器和压力调节管，用于根据操作模式均衡压力。压力调节管连接在室外机之间。

72. 发明申请

US20050052111A1 Convergence compensating deflection yoke 审中-公开
标题翻译：会聚补偿偏转线圈
公开(公告)号：US20050052111A1
公开(公告)日：2005-03-10
申请号：US10891432
申请日：2004-07-13
申请人： Jae Han , Jong Park , Jae Song
发明人： Jae Han , Jong Park , Jae Song
IPC分类号： H01J29/70 , H01J29/76 , H01J29/46
CPC分类号： H01J29/703 , H01J29/762 , H01J2229/5684
摘要： The present invention relates to a deflection yoke which includes an iron plate on a neck portion of a coil separator to convert PQH from a negative tendency to a positive one so that degradation of convergence features can be prevented. The deflection yoke of the invention comprises: a coil separator including a screen portion coupled to a screen panel of a CRT, a rear cover, and a neck portion extended from the central plane of the rear cover to be coupled to an electron gun portion of the CRT; horizontal and vertical deflection coils provided in the inner and outer sides of the coil separator to form horizontal and vertical deflection magnetic fields to control an electron beam; and compensating means provided in the neck portion of the coil separator to compensate convergence on a screen. The negative tendency of PQH according to the flattening of the CRT can be changed into the positive tendency by providing the compensating iron plates in the rear plate side of the coil separator in the shape of wrapping the neck portion.
摘要翻译：偏转线圈技术领域本发明涉及一种偏转线圈，其包括在线圈分离器的颈部上的铁板，以将PQH从负趋势转换为正向，从而可以防止会聚特征的退化。本发明的偏转线圈包括：线圈分离器，其包括耦合到CRT的屏幕面板的屏幕部分，后盖和从后盖的中心平面延伸的颈部，以连接到电子枪部分的电子枪部分 CRT; 设置在线圈分离器的内侧和外侧的水平和垂直偏转线圈，以形成水平和垂直偏转磁场，以控制电子束; 以及设置在线圈分离器的颈部中以补偿屏幕上的会聚的补偿装置。通过在线圈分离器的后板侧设置以包裹颈部的形状的补偿铁板，可以将根据CRT的扁平化的PQH的消极趋势变为积极的趋势。

73. 发明申请

US20050024732A1 Integrator of optical device 失效
标题翻译：光器件集成商
公开(公告)号：US20050024732A1
公开(公告)日：2005-02-03
申请号：US10878122
申请日：2004-06-29
申请人： Ho Kang , Jong Park
发明人： Ho Kang , Jong Park
IPC分类号： G02F1/13 , G02B27/09 , G02F1/13357 , G03B21/00 , G03B21/14 , H04N9/31 , G02B26/00 , G02B27/10
CPC分类号： G02B27/0977 , G02B27/09
摘要： An integrator of an optical device using a color drum is disclosed. The integrator includes an opening receiving a light generated from a lamp, an optical path part reflecting and passing forward the light received at the opening, a mirror part refracting and totally reflecting the light passed through the optical path part and changing a direction of the light being transmitted, a polarization plate transmitting light rays having a constant polarization direction, among the reflected light, and reflecting remaining light rays having other polarization directions, and a wave plate changing a phase of the light reflected from the polarization plate.
摘要翻译：公开了使用彩色鼓的光学装置的积分器。积分器包括：接收从灯产生的光的开口;反射并使在开口处接收的光向前反射的光路部分，反射镜部折射并全反射通过光路部分的光并改变光的方向透射偏振板，透射具有恒定偏振方向的光线的反射光和反射具有其它偏振方向的剩余光线的偏振板，以及改变从偏振板反射的光的相位的波片。

74. 发明申请

US20050001210A1 Organic thin film transistor comprising multi-layered gate insulator 有权
标题翻译：包括多层栅极绝缘体的有机薄膜晶体管
公开(公告)号：US20050001210A1
公开(公告)日：2005-01-06
申请号：US10769816
申请日：2004-02-03
申请人： Sang Lee , Jong Park , Yi Lyu , Young Byun , Bon Koo , In Kang
发明人： Sang Lee , Jong Park , Yi Lyu , Young Byun , Bon Koo , In Kang
IPC分类号： C08F212/14 , C08F222/40 , H01L21/312 , H01L21/316 , H01L29/786 , H01L51/05 , H01L51/30 , H01L35/24
CPC分类号： H01L51/0545 , H01L21/31604 , H01L21/31691 , H01L51/0052 , H01L51/0529 , H01L51/0537
摘要： An organic thin film transistor (OTFT) comprising a gate electrode, a gate insulating film, an organic active layer and a source/drain electrode, or a gate electrode, a gate insulating film, a source/drain electrode and an organic active layer, sequentially formed on a substrate, wherein the gate insulating film is a multi-layered insulator comprising a first layer of a high dielectric material and a second layer of an insulating organic polymer compatible with the organic active layer, the second layer being positioned directly under the organic active layer. The OTFT of the present invention shows low threshold and driving voltages, high charge mobility, and high Ion/Ioff, and it can be prepared by a wet process.
摘要翻译：一种有机薄膜晶体管（OTFT），包括栅极，栅极绝缘膜，有机活性层和源极/漏极，或栅电极，栅极绝缘膜，源/漏电极和有机活性层，依次形成在基板上，其中栅极绝缘膜是包括高介电材料的第一层和与有机活性层相容的绝缘有机聚合物的第二层的多层绝缘体，第二层位于有机活性层。本发明的OTFT显示低阈值和驱动电压，高电荷迁移率和高离子/离子交换，并且可以通过湿法制备。

75. 发明授权

US09111918B2 Fin fabrication process for entrainment heat sink 有权
标题翻译：用于夹带散热器的翅片制造工艺
公开(公告)号：US09111918B2
公开(公告)日：2015-08-18
申请号：US12955449
申请日：2010-11-29
申请人： Wei Yang , Leonard Hilton , Yuandong Gu , Jong Park
发明人： Wei Yang , Leonard Hilton , Yuandong Gu , Jong Park
IPC分类号： H01L21/48 , B21D53/04 , B21D22/04 , B21D19/08 , B21D31/02 , H01L23/467 , H05K7/20
CPC分类号： H01L21/4878 , B21D19/08 , B21D22/04 , B21D31/02 , B21D53/04 , F28F3/044 , F28F3/12 , F28F13/12 , F28F2260/02 , H01L23/467 , H01L2924/00013 , H01L2924/0002 , H05K7/20563 , Y10T29/49826 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： A process to fabricate a fin for a heat sink includes creating an array of micro diameter holes on a substrate, and then coupling the substrate to a mold. The mold includes angular dimples such that one or more of the micro diameter holes on the substrate come into contact with the angular dimples in the mold, thereby forming an angle between the micro diameter holes and a surface of the substrate. The process further includes placing the substrate onto a plate. The plate includes micro air channels such that the micro air channels are in communication with the micro diameter holes. In another embodiment, two pieces of substrate, each with micro diameter holes and embossed micro air channels are coupled together to form a fin.
摘要翻译：制造用于散热片的翅片的方法包括在基底上形成微孔直径孔阵列，然后将基底连接到模具上。模具包括角凹坑，使得基底上的一个或多个微孔直径与模具中的角凹坑接触，从而在微孔直径与基底表面之间形成一角度。该方法还包括将基板放置在板上。板包括微空气通道，使得微空气通道与微径孔连通。在另一个实施例中，将两个具有微孔和压花微空气通道的基片连接在一起以形成翅片。

76. 发明授权

US07974134B2 Voltage generator to compensate sense amplifier trip point over temperature in non-volatile memory 有权
标题翻译：电压发生器补偿非易失性存储器中读出放大器跳变点温度过高
公开(公告)号：US07974134B2
公开(公告)日：2011-07-05
申请号：US12617860
申请日：2009-11-13
申请人： Fanglin Zhang , Jong Park , Man Mui , Alexander Chu , Seungpil Lee
发明人： Fanglin Zhang , Jong Park , Man Mui , Alexander Chu , Seungpil Lee
IPC分类号： G11C16/06
CPC分类号： G11C16/26 , G11C11/5642
摘要： In a non-volatile memory system, a voltage generator provides a voltage to a gate of a voltage-setting transistor which is used in a sense circuit to set an initial voltage at a sense node. At the end of a sense period, a final voltage of the sense node is compared to a trip point, which is the threshold voltage of a voltage-sensing transistor. To account for temperature variations and manufacturing process variations, the voltage generator includes a transistor which is matched to the voltage-setting transistor, and a transistor which is matched to the voltage-sensing transistor. As a result, a voltage swing between the initial voltage and the trip point is constant, even as the initial voltage and trip point vary. In a particular implementation, the voltage generator uses a cascode current mirror circuit, and receives a reference current from a band gap voltage circuit.
摘要翻译：在非易失性存储器系统中，电压发生器向用于感测电路的电压设置晶体管的栅极提供电压，以在感测节点处设置初始电压。在感测周期结束时，将感测节点的最终电压与作为电压感测晶体管的阈值电压的跳变点进行比较。为了解决温度变化和制造工艺变化，电压发生器包括与电压设定晶体管相匹配的晶体管和与电压感测晶体管匹配的晶体管。结果，即使初始电压和跳变点变化，初始电压和跳闸点之间的电压摆动也是恒定的。在特定实施方案中，电压发生器使用共源共栅电流镜电路，并从带隙电压电路接收参考电流。

77. 发明申请

US20070278570A1 High-Voltage Nmos-Transistor and Associated Production Method 有权
标题翻译：高电压晶体管及相关生产方法
公开(公告)号：US20070278570A1
公开(公告)日：2007-12-06
申请号：US11659512
申请日：2005-08-05
申请人： Martin Knaipp , Jong Park
发明人： Martin Knaipp , Jong Park
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66681 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/42368 , H01L29/7816
摘要： An n-conductively doped source region (2) in a deep p-conducting well (DP), a channel region (13), a drift region (14) formed by a counterdoping region (12), preferably below a gate field plate (6) insulated by a gate field oxide (8), and an n-conductively doped drain region (3) arranged in a deep n-conducting well (DN) are arranged in this order at a top side of a substrate (1). A lateral junction (11) between the deep p-conducting well (DP) and the deep n-conducting well (DN) is present in the drift path (14) in the vicinity of the drain region (3) so as to avoid a high voltage drop in the channel region (13) during the operation of the transistor and to achieve a high threshold voltage and also a high breakdown voltage between source and drain.
摘要翻译：深导电阱（DP）中的n导电掺杂源区（2），沟道区（13），由反掺杂区（12）形成的漂移区（14），优选地在栅极场板 6），栅极氧化物（8）绝缘，并且布置在深导电阱（DN）中的n导电掺杂漏极区域（3）依次布置在衬底（1）的顶侧。深沟道阱（DP）和深导通阱（DN）之间的横向结（11）存在于漏极区域（3）附近的漂移路径（14）中，以避免在晶体管工作期间，沟道区域（13）中的高电压降，以及在源极和漏极之间实现高阈值电压以及高的击穿电压。

78. 发明申请

US20070242512A1 Non-Volatile Semiconductor Memory Devices with Lower and Upper Bit Lines Sharing a Voltage Control Block, and Memory Cards and Systems Having the Same 失效
标题翻译：具有下位线和上位线的非易失性半导体存储器件共享电压控制块，以及具有相同功能的存储卡和系统
公开(公告)号：US20070242512A1
公开(公告)日：2007-10-18
申请号：US11764352
申请日：2007-06-18
申请人： Jong Park , Min Park
发明人： Jong Park , Min Park
IPC分类号： G11C16/24
CPC分类号： G11C11/5628 , G11C16/0483
摘要： A non-volatile semiconductor memory device includes a page buffer comprising a lower latch block and an upper latch block, and a memory array that is connected to the lower latch block via a lower common bit line and that is connected to the upper latch block via an upper common bit line. The memory array includes a plurality of non-volatile memory cells, a lower even bit line and a lower odd bit line that are selectively connectable to the lower common bit line, an upper even bit line and an upper odd bit line that are selectively connectable to the upper common bit line, a first switch that electrically connects the lower even bit line to the upper even bit line in response to a first connection control signal and a second switch that electrically connects the lower odd bit line to the upper odd bit line in response to a second connection control signal.
摘要翻译：一种非易失性半导体存储器件包括一个页缓冲器，包括一个下锁存器块和一个上锁存器，以及一个存储器阵列，该存储器阵列经由下公共位线连接到下锁存器块，并经由下公共位线连接到上锁存器块上位公用位线。存储器阵列包括可选择地连接到下公共位线的多个非易失性存储器单元，较低偶数位线和下部奇数位线，可选择地连接的上部偶数位线和上部奇数位线到所述上公共位线，响应于第一连接控制信号将所述下偶数位线电连接到所述上偶数位线的第一开关和将所述下奇数位线电连接到所述上奇数位线的第二开关响应于第二连接控制信号。

79. 发明申请

US20070217545A1 Apparatus and method for providing transmit diversity in multi-antenna wireless communication systems 有权
标题翻译：在多天线无线通信系统中提供发射分集的装置和方法
公开(公告)号：US20070217545A1
公开(公告)日：2007-09-20
申请号：US11452471
申请日：2006-06-13
申请人： Jong Park , Je Kim , Ju Park
发明人： Jong Park , Je Kim , Ju Park
IPC分类号： H04L27/00 , H04K1/10
CPC分类号： H04L1/0606 , H04B7/0634 , H04L25/0206 , H04L27/2608
摘要： In an apparatus and method for providing transmit (Tx) diversity in a multi-antenna wireless communication system, Tx diversity is provided by estimating a channel to each antenna using a signal received from the antenna, estimating channel state information (CSI) from the first Tx node to each antenna using the estimated channel, and determining a signal to be transmitted to the antennas in different methods according to whether phase compensation is required for information to be transmitted using the estimated channel and the CSI.
摘要翻译：在用于在多天线无线通信系统中提供发射（Tx）分集的装置和方法中，通过使用从天线接收的信号估计到每个天线的信道来提供Tx分集，从第一个信道估计信道状态信息使用所估计的信道向每个天线发送Tx节点，并且根据是否需要使用所估计的信道和CSI发送的信息来相位补偿，以不同的方法确定要发送到天线的信号。

80. 发明申请

US20070215603A1 High frequency heat treatment method for fine bottom-closed hole 有权
标题翻译：高频热处理方法为细底孔封闭
公开(公告)号：US20070215603A1
公开(公告)日：2007-09-20
申请号：US11418209
申请日：2006-05-05
申请人： Jong Park , Young Jeon
发明人： Jong Park , Young Jeon
IPC分类号： H05B6/02
CPC分类号： H05B6/101 , H05B6/38
摘要： A high frequency heat treatment method for a fine bottom-closed hole comprises preparing a coil so as to be completely inserted into the fine bottom-closed hole, preparing a core for controlling a magnetic flux within the coil such that the core protrudes from upper and lower sides of the coil, heat-treating a target part of the fine bottom-closed hole under conditions of a heating time of 2˜3 seconds, an output power of 200˜300 kW, a quenching time of 3˜5 seconds, a positive electrode voltage of 4˜8 kV, and a positive electrode current of 2.0˜4.5 A, and quenching the heat-treated part of the fine bottom-closed hole with cooling nozzles fixed around the heat-treated part such that a sufficient amount of cooling water is injected uniformly over the whole heated part with a sufficient pressure via the cooling nozzles.
摘要翻译：精细底部闭孔的高频热处理方法包括：准备线圈以完全插入细底孔中，制备用于控制线圈内的磁通量的芯，使得芯从上方突出，在线圈的下侧，加热时间为2〜3秒，输出功率为200〜300kW，淬火时间为3〜5秒的条件下，对细底孔的目标部分进行热处理，a 正电极电压为4〜8kV，正电极电流为2.0〜4.5A，用固定在热处理部件周围的冷却喷嘴淬火细底部封闭孔的热处理部分，冷却水通过冷却喷嘴以足够的压力均匀地喷射在整个加热部件上。

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