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71. 发明授权

US08692611B2 Power boosting circuit for semiconductor packaging 有权
标题翻译：半导体封装功率升压电路
公开(公告)号：US08692611B2
公开(公告)日：2014-04-08
申请号：US13287237
申请日：2011-11-02
申请人： Richard Dewitt Crisp , Michael C. Parris , Mark Kroot
发明人： Richard Dewitt Crisp , Michael C. Parris , Mark Kroot
IPC分类号： G05F1/10
CPC分类号： G06F1/26 , H01L2924/0002 , H01L2924/00
摘要： A microelectronic package includes a microelectronic element operable to output a discrete-value logic signal indicating an imminent increase in demand for current by at least some portion of the microelectronic element. An active power delivery element within the package is operable by the logic signal to increase current delivery to the microelectronic element.
摘要翻译：微电子封装包括微电子元件，其可操作以输出离散值逻辑信号，该离散值逻辑信号指示微电子元件的至少一部分即将对电流的需求增加。封装内的有功功率输送元件可由逻辑信号操作，以增加对微电子元件的电流输送。

72. 发明申请

US20130043935A1 POWER BOOSTING CIRCUIT FOR SEMICONDUCTOR PACKAGING 有权
标题翻译：用于半导体封装的功率提升电路
公开(公告)号：US20130043935A1
公开(公告)日：2013-02-21
申请号：US13287237
申请日：2011-11-02
申请人： Richard Dewitt Crisp , Michael C. Parris , Mark Kroot
发明人： Richard Dewitt Crisp , Michael C. Parris , Mark Kroot
IPC分类号： G05F1/10
CPC分类号： G06F1/26 , H01L2924/0002 , H01L2924/00
摘要： A microelectronic package includes a microelectronic element operable to output a discrete-value logic signal indicating an imminent increase in demand for current by at least some portion of the microelectronic element. An active power delivery element within the package is operable by the logic signal to increase current delivery to the microelectronic element.
摘要翻译：微电子封装包括微电子元件，其可操作以输出离散值逻辑信号，该离散值逻辑信号指示微电子元件的至少一部分即将对电流的需求增加。封装内的有功功率输送元件可由逻辑信号操作，以增加对微电子元件的电流输送。

73. 发明申请

US20080042250A1 Stacked microelectronic assemblies and methods therefor 有权
标题翻译：堆叠的微电子组件及其方法
公开(公告)号：US20080042250A1
公开(公告)日：2008-02-21
申请号：US11506472
申请日：2006-08-18
申请人： Stuart E. Wilson , Ronald Green , Richard Dewitt Crisp , Giles Humpston
发明人： Stuart E. Wilson , Ronald Green , Richard Dewitt Crisp , Giles Humpston
IPC分类号： H01L23/02
CPC分类号： H01L23/66 , H01L25/105 , H01L25/16 , H01L2224/48091 , H01L2224/48227 , H01L2225/1023 , H01L2225/1058 , H01L2225/107 , H01L2924/09701 , H01L2924/19106 , H01L2924/30107 , H01L2924/3011 , H01L2924/3511 , H01L2924/00014 , H01L2924/00
摘要： A stacked microelectronic assembly includes a base substrate having conductive elements projecting from a bottom surface thereof and a first microelectronic subassembly underlying a bottom surface of the base substrate. The first microelectronic subassembly includes a first dielectric substrate, a first microelectronic element connected with the first dielectric substrate and first conductive posts projecting from the first dielectric substrate toward the bottom surface of the base substrate for electrically interconnecting the first microelectronic element and the base substrate. The assembly also has a second microelectronic subassembly overlying the base substrate. The second microelectronic subassembly includes a second dielectric substrate, a second microelectronic element connected with the second dielectric substrate and second conductive posts projecting toward the top surface of the base substrate for electrically interconnecting the second microelectronic element and the base substrate. The first microelectronic subassembly has a first height and the conductive elements projecting from the bottom surface of the base substrate have a second height that is greater than the first height of the first microelectronic subassembly.
摘要翻译：堆叠的微电子组件包括具有从其底表面突出的导电元件的基底基板和位于基底基底的底表面下方的第一微电子子组件。第一微电子子组件包括第一电介质衬底，与第一电介质衬底连接的第一微电子元件和从第一电介质衬底向基底衬底的底表面突出的第一导电柱，用于将第一微电子元件和基底衬底电互连。组件还具有覆盖在基底基板上的第二微电子子组件。第二微电子子组件包括第二电介质衬底，与第二电介质衬底连接的第二微电子元件和朝向基底衬底的顶表面突出的第二导电柱，用于电连接第二微电子元件和基底衬底。第一微电子子组件具有第一高度，并且从基底衬底的底表面突出的导电元件具有大于第一微电子子组件的第一高度的第二高度。

74. 发明授权

US07545029B2 Stack microelectronic assemblies 有权
标题翻译：堆叠微电子组件
公开(公告)号：US07545029B2
公开(公告)日：2009-06-09
申请号：US11506472
申请日：2006-08-18
申请人： Stuart E. Wilson , Ronald Green , Richard Dewitt Crisp , Giles Humpston
发明人： Stuart E. Wilson , Ronald Green , Richard Dewitt Crisp , Giles Humpston
IPC分类号： H01L23/02 , H05K7/00 , H01L21/00
CPC分类号： H01L23/66 , H01L25/105 , H01L25/16 , H01L2224/48091 , H01L2224/48227 , H01L2225/1023 , H01L2225/1058 , H01L2225/107 , H01L2924/09701 , H01L2924/19106 , H01L2924/30107 , H01L2924/3011 , H01L2924/3511 , H01L2924/00014 , H01L2924/00
摘要： A stacked microelectronic assembly includes a base substrate having conductive elements projecting from a bottom surface thereof and a first microelectronic subassembly underlying a bottom surface of the base substrate. The first microelectronic subassembly includes a first dielectric substrate, a first microelectronic element connected with the first dielectric substrate and first conductive posts projecting from the first dielectric substrate toward the bottom surface of the base substrate for electrically interconnecting the first microelectronic element and the base substrate. The assembly also has a second microelectronic subassembly overlying the base substrate. The second microelectronic subassembly includes a second dielectric substrate, a second microelectronic element connected with the second dielectric substrate and second conductive posts projecting toward the top surface of the base substrate for electrically interconnecting the second microelectronic element and the base substrate. The first microelectronic subassembly has a first height and the conductive elements projecting from the bottom surface of the base substrate have a second height that is greater than the first height of the first microelectronic subassembly.
摘要翻译：堆叠的微电子组件包括具有从其底表面突出的导电元件的基底基板和位于基底基底的底表面下方的第一微电子子组件。第一微电子子组件包括第一电介质衬底，与第一电介质衬底连接的第一微电子元件和从第一电介质衬底向基底衬底的底表面突出的第一导电柱，用于将第一微电子元件和基底衬底电互连。组件还具有覆盖在基底基板上的第二微电子子组件。第二微电子子组件包括第二电介质衬底，与第二电介质衬底连接的第二微电子元件和朝向基底衬底的顶表面突出的第二导电柱，用于电连接第二微电子元件和基底衬底。第一微电子子组件具有第一高度，并且从基底衬底的底表面突出的导电元件具有大于第一微电子子组件的第一高度的第二高度。

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