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71. 发明申请

US20140034243A1 APPARATUS FOR PLASMA PROCESSING SYSTEM WITH TUNABLE CAPACITANCE 审中-公开
标题翻译：用于具有可调电容的等离子体处理系统的装置
公开(公告)号：US20140034243A1
公开(公告)日：2014-02-06
申请号：US14058101
申请日：2013-10-18
申请人： Rajinder Dhindsa , Alexei Marakhtanov
发明人： Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： H01J37/21
CPC分类号： H01J37/21 , H01J37/32091 , H01J37/32642 , H01J37/32697
摘要： A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The substrate is disposed above a chuck and surrounded by an edge ring, which is electrically isolated from the chuck. The system includes a RF power, which provides power to the chuck. The system also includes a tunable capacitance arrangement, which is coupled to the edge ring to provide RF coupling to the edge ring, resulting in the edge ring having an edge ring potential. The system further includes the plasma processing chamber configured to strike plasma to process the substrate, which is processed while the tunable capacitance arrangement is configured to cause the edge ring potential to be dynamically tunable to a DC potential of the substrate while processing the substrate.
摘要翻译：提供了一种等离子体处理系统，其具有用于处理基板的等离子体处理室。基板设置在卡盘上方并被与卡盘电隔离的边缘环包围。该系统包括向卡盘供电的RF功率。该系统还包括可调电容布置，其耦合到边缘环以提供与边缘环的RF耦合，导致边缘环具有边缘环电位。该系统还包括等离子体处理室，该等离子体处理室被配置成撞击等离子体以处理衬底，该处理在可调谐电容布置被配置成使得边缘环电位在处理衬底的同时能够动态调节到衬底的DC电位。

72. 发明申请

US20130240147A1 METHODS AND APPARATUS FOR SELECTIVELY MODULATING AZIMUTHAL NON-UNIFORMITY IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：在等离子体处理系统中选择性地调整AZIMUTHAL非均匀性的方法和装置
公开(公告)号：US20130240147A1
公开(公告)日：2013-09-19
申请号：US13423284
申请日：2012-03-19
申请人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
发明人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： H01L21/3065
CPC分类号： H01J37/32082 , H01J37/32669
摘要： Methods and apparatus for modulating azimuthal non-uniformity in a plasma processing chamber are disclosed. Apparatus includes a plasma processing system having a plasma processing chamber. There is included an RF power supply and a lower electrode configured to receive RF signal from the power supply. There is also included magnet ring disposed off-center relative to a center of the lower electrode, the magnet ring further disposed in one of a first position and a second position, the first position being below the lower electrode, the second position being around an outer periphery of the lower electrode.
摘要翻译：公开了用于调制等离子体处理室中的方位不均匀性的方法和装置。装置包括具有等离子体处理室的等离子体处理系统。包括RF电源和配置成从电源接收RF信号的下电极。还包括相对于下电极的中心偏心设置的磁环，磁环进一步设置在第一位置和第二位置中的一个位置，第一位置在下电极下方，第二位置围绕下电极下电极的外周。

73. 发明授权

US08484846B2 Method of joining components for a composite showerhead electrode assembly for a plasma processing apparatus 有权
标题翻译：用于等离子体处理装置的复合喷头电极组件的部件的连接方法
公开(公告)号：US08484846B2
公开(公告)日：2013-07-16
申请号：US13403266
申请日：2012-02-23
申请人： Rajinder Dhindsa
发明人： Rajinder Dhindsa
IPC分类号： B21D53/76 , B23P17/00
CPC分类号： H01L21/67069 , C23C16/45565 , C23C16/5096 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01J37/32605 , Y10T29/49002 , Y10T29/4913 , Y10T29/49401 , Y10T29/49428 , Y10T29/49769 , Y10T29/49895 , Y10T29/49959 , Y10T156/10
摘要： A showerhead electrode for a plasma processing apparatus includes an interface gel between facing surfaces of an electrode plate and a backing plate. The interface gel maintains thermal conductivity during lateral displacements generated during temperature cycling due to mismatch in coefficients of thermal expansion. The interface gel comprises, for example, a silicone based composite filled with aluminum oxide microspheres. The interface gel can conform to irregularly shaped features and maximize surface contact area between mating surfaces. The interface gel can be pre-applied to a consumable upper electrode.
摘要翻译：用于等离子体处理装置的喷头电极包括在电极板和背板的相对表面之间的界面凝胶。界面凝胶在温度循环期间由于热膨胀系数不匹配而产生的横向位移期间保持导热性。界面凝胶包括例如填充有氧化铝微球的硅氧烷基复合材料。界面凝胶可以符合不规则形状的特征并最大化配合表面之间的表面接触面积。界面凝胶可以预先施加到可消耗的上电极上。

74. 发明申请

US20130160948A1 Plasma Processing Devices With Corrosion Resistant Components 审中-公开
标题翻译：具有耐腐蚀组件的等离子体处理装置
公开(公告)号：US20130160948A1
公开(公告)日：2013-06-27
申请号：US13370765
申请日：2012-02-10
申请人： Hong Shih , Lin Xu , Rajinder Dhindsa , John Daugherty , Yan Fang , Siwen Li
发明人： Hong Shih , Lin Xu , Rajinder Dhindsa , John Daugherty , Yan Fang , Siwen Li
IPC分类号： B05C5/02 , C23C16/50
CPC分类号： C23C16/50 , C23C16/06 , C23C16/56
摘要： In one embodiment, a plasma processing device may include a plasma processing chamber, a plasma region, an energy source, and a corrosion resistant component. The plasma processing chamber can be maintained at a vacuum pressure and can confine a plasma processing gas. The energy source can transmit energy into the plasma processing chamber and transform at least a portion of the plasma processing gas into plasma within the plasma region. The corrosion resistant component can be located within the plasma processing chamber. The corrosion resistant component can be exposed to the plasma processing gas and is not coincident with the plasma region. The corrosion resistant component may include an inner layer of stainless steel that is coated with an outer layer of Tantalum (Ta).
摘要翻译：在一个实施例中，等离子体处理装置可以包括等离子体处理室，等离子体区域，能量源和耐腐蚀部件。等离子体处理室可以保持在真空压力并且可以限制等离子体处理气体。能量源可以将能量传输到等离子体处理室中，并将至少一部分等离子体处理气体转化成等离子体区域内的等离子体。耐腐蚀组分可位于等离子体处理室内。耐腐蚀成分可暴露于等离子体处理气体中，与等离子体区域不一致。耐腐蚀部件可以包括涂覆有钽（Ta）的外层的不锈钢内层。

75. 发明申请

US20130127124A1 PERIPHERAL RF FEED AND SYMMETRIC RF RETURN WITH RF STRAP INPUT 有权
标题翻译：外围射频馈线和对射RF返回与RF STRAP输入
公开(公告)号：US20130127124A1
公开(公告)日：2013-05-23
申请号：US13419369
申请日：2012-03-13
申请人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
发明人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： B23B31/28 , H05K13/00
CPC分类号： H01J37/32577 , H01J37/32715 , H01L21/6831 , Y10T29/49117 , Y10T29/53178 , Y10T279/23
摘要： Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface, a peripheral RF feed configured to deliver RF power, the peripheral RF feed having a first portion contacting a periphery of the facility plate and an RF strap coupling the peripheral RF feed to an RF source.
摘要翻译：提出了用于对称RF传输的外围RF馈送和对称RF返回的系统和方法。根据一个实施例，提供了一种用于等离子体处理的卡盘组件。卡盘组件包括：静电卡盘，其具有在第一侧上的基板支撑表面，在与基板支撑表面相对的第二侧耦合到静电卡盘的设备板，被配置为提供RF功率的外围RF馈送，外围RF 进料具有接触设备板的周边的第一部分和将外围RF进料耦合到RF源的RF带。

76. 发明申请

US20130126476A1 DUAL ZONE TEMPERATURE CONTROL OF UPPER ELECTRODES 有权
标题翻译：上电极双区温度控制
公开(公告)号：US20130126476A1
公开(公告)日：2013-05-23
申请号：US13420949
申请日：2012-03-15
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Ryan Bise , Lumin Li , Sang Ki Nam , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony de la LIera
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Ryan Bise , Lumin Li , Sang Ki Nam , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony de la LIera
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： H01J37/32642 , H01J37/3244 , H01J37/32541 , H01J37/32724 , H01L21/67109
摘要： A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.
摘要翻译：等离子体处理的系统和方法包括等离子体室，其包括基板支撑件和与基板支撑件相对的上电极，上电极具有多个同心温度控制区域和耦合到等离子体室的控制器。

77. 发明申请

US20130059448A1 Pulsed Plasma Chamber in Dual Chamber Configuration 审中-公开
标题翻译：脉冲等离子室双腔配置
公开(公告)号：US20130059448A1
公开(公告)日：2013-03-07
申请号：US13227404
申请日：2011-09-07
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
IPC分类号： H01L21/3065 , H01L21/306 , C23F1/08
摘要： Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to set parameters to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF period, and to assist in the re-striking of the bottom plasma during the ON period.
摘要翻译：提供了用于在脉冲等离子体室中处理衬底的实施例。具有两个腔室的处理装置，由流体连接腔室的板分开，包括连续波（CW）控制器，脉冲控制器和系统控制器。 CW控制器设置耦合到顶部电极的第一射频（RF）电源的电压和频率。脉冲控制器可操作地为耦合到底部电极的第二RF电源产生的脉冲RF信号设置电压，频率，接通周期持续时间和关闭周期持续时间。系统控制器可操作以设定参数以调节室之间的物质流动，以辅助负离子蚀刻，以在关闭期间中止余辉期间晶片表面上的过多正电荷，并且辅助重击在ON期间的底部等离子体。

78. 发明授权

US08262922B2 Plasma confinement rings having reduced polymer deposition characteristics 有权
标题翻译：具有降低的聚合物沉积特性的等离子体约束环
公开(公告)号：US08262922B2
公开(公告)日：2012-09-11
申请号：US12230236
申请日：2008-08-26
申请人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
发明人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
IPC分类号： H01L21/302
CPC分类号： H01J37/32623 , H01J37/32477 , H01J37/32522 , H01J37/32642 , Y10S156/914 , Y10S156/915
摘要： Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.
摘要翻译：提供等离子体限制环组件，其包括适于在等离子体暴露的表面上达到足够高的温度的限制环，以避免聚合物沉积在这些表面上。等离子体约束环包括适于在包括等离子体暴露表面的环的选定部分处定位加热的热扼流圈。热扼流圈减少从这些部分到环的其他部分的热传导，这导致环的选定部分在等离子体处理期间达到期望的温度。

79. 发明申请

US20120214310A1 WIGGLING CONTROL FOR PSEUDO-HARDMASK 有权
标题翻译： PSEUDO-HARDMASK的激光控制
公开(公告)号：US20120214310A1
公开(公告)日：2012-08-23
申请号：US13029824
申请日：2011-02-17
申请人： Ben-Li Sheu , Rajinder Dhindsa , Vinay Pohray , Eric A. Husdon , Andrew D. Bailey, III
发明人： Ben-Li Sheu , Rajinder Dhindsa , Vinay Pohray , Eric A. Husdon , Andrew D. Bailey, III
IPC分类号： H01L21/311 , C23F1/08
CPC分类号： H01L21/31116 , H01L21/31144
摘要： A method for etching features in an etch layer. A conditioning for a patterned pseudo-hardmask of amorphous carbon or polysilicon disposed over the etch layer is provided, where the conditioning comprises providing a fluorine free deposition gas comprising a hydrocarbon gas, forming a plasma from the fluorine free deposition gas, providing a bias less than 500 volts, and forming a deposition on top of the patterned pseudo-hardmask. The etch layer is etched through the patterned pseudo-hardmask.
摘要翻译：一种用于蚀刻蚀刻层中的特征的方法。提供了一种用于设置在蚀刻层上的非晶碳或多晶硅的图案化伪硬掩模的调理，其中调节包括提供包含烃气体的无氟沉积气体，从无氟沉积气体形成等离子体，超过500伏，并且在图案化伪硬掩模的顶部上形成沉积物。蚀刻层通过图案化伪硬掩模进行蚀刻。

80. 发明授权

US08216486B2 Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body 有权
标题翻译：温度控制模块采用气体压力来控制液体冷却液和组件体之间的热导率
公开(公告)号：US08216486B2
公开(公告)日：2012-07-10
申请号：US13304893
申请日：2011-11-28
申请人： Rajinder Dhindsa , Henry Povolny , Jerry K. Antolik
发明人： Rajinder Dhindsa , Henry Povolny , Jerry K. Antolik
IPC分类号： C23C16/00 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/50 , H01L21/3065
CPC分类号： H01J37/32724 , C23C16/4557 , C23C16/45572 , C23C16/46 , G05D23/192 , G05D23/22 , H01J37/32522
摘要： A temperature control module for a semiconductor processing chamber comprises a thermally conductive component body, one or more channels in the component body and one or more tubes concentric therewith, such that gas filled spaces surround the tubes. By flowing a heat transfer liquid in the tubes and adjusting the gas pressure in the spaces, localized temperature of the component body can be precisely controlled. One or more heating elements can be arranged in each zone and a heat transfer liquid can be passed through the tubes to effect heating or cooling of each zone by activating the heating elements and/or varying pressure of the gas in the spaces.
摘要翻译：用于半导体处理室的温度控制模块包括导热部件主体，部件主体中的一个或多个通道和与其同心的一个或多个管，使得充满气体的空间围绕管。通过在管中流动传热液体并调节空间中的气体压力，可以精确地控制组件主体的局部温度。一个或多个加热元件可以布置在每个区域中，并且传热液体可以通过管子，以通过激活加热元件和/或改变空间中的气体的压力来实现每个区域的加热或冷却。

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