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    • 71. 发明授权
    • Semiconductor device and memory card using same
    • 半导体器件和存储卡使用相同
    • US07268611B2
    • 2007-09-11
    • US10524087
    • 2003-08-08
    • Mutsumi KikuchiNoboru AkiyamaHiroyuki ShojiFumio MurabayashiAkihiko KanoudaTakashi SaseKoji Tateno
    • Mutsumi KikuchiNoboru AkiyamaHiroyuki ShojiFumio MurabayashiAkihiko KanoudaTakashi SaseKoji Tateno
    • G05F1/10
    • G11C5/147H01L27/0688H01L27/08H02M3/156H02M2001/007
    • A semiconductor device capable of achieving downsizing without reducing the power supply efficiency and capable of reducing switching noises and a memory card using the same are disclosed. The device comprises a plurality of stages of voltage booster circuits for potentially raising a power supply voltage up to a final output voltage, a voltage control unit for controlling an output voltage at a nearby location of the final stage, and one or more internal elements to which the final output voltage is supplied. A primary voltage booster circuit at the first stage includes an inductance element, a switching element, a diode and a driver circuit. At a metal core part of the inductance element, a metal wiring line is used, which was formed by use of a fabrication process of semiconductor integrated circuits, while employing for its core part an inter-wiring layer dielectric film that was formed using the fabrication process. In addition, the switching element and the diode are arranged so that portions thereof are disposed beneath the inductance element.
    • 公开了能够实现小型化而不降低电源效率并且能够降低开关噪声的半导体器件和使用其的存储卡。 该装置包括用于潜在地提高最终输出电压的电源电压的多级升压电路,用于控制最后级的附近位置处的输出电压的电压控制单元和一个或多个内部元件 其提供最终输出电压。 第一级的初级升压电路包括电感元件,开关元件,二极管和驱动器电路。 在电感元件的金属芯部分,使用通过使用半导体集成电路的制造工艺形成的金属布线,同时使用其核心部分使用该制造形成的布线层电介质膜 处理。 此外,开关元件和二极管被布置成使得其部分设置在电感元件下方。