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71. 发明授权

KR101450093B1 이종접합 산화막 구조를 이용한 저항변화 메모리소자 및 그 제조방법 有权
标题翻译：具有异质结氧化物结构的电阻随机存取存储器件
公开(公告)号：KR101450093B1
公开(公告)日：2014-10-15
申请号：KR1020130125975
申请日：2013-10-22
申请人： 한국과학기술연구원
发明人： 백승협 , 김진상 , 강종윤 , 최지원 , 정진관 , 윤석진 , 김성근
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/146 , H01L45/1666
摘要： The present invention relates to a resistance random access memory device with a hetero-junction oxide film structure which is capable of using two-dimensional electron gas generated from a hetero-junction oxide interface as a low electrode of the resistance random access memory device by applying the hetero-junction oxide film structure, and of maximizing Ion/Ioff by utilizing the depletion property of two-dimensional electron gas, and a method of fabricating the same. A resistance random access memory device with a hetero-junction oxide film structure according to the present invention includes an oxide substrate; an oxide thin film layer provided on the oxide substrate and including a material, a kind of which is different from that of the oxide substrate; and a two-dimensional electron gas layer formed on the oxide substrate and the oxide thin film by an upper electrode provided on the oxide thin film layer and the hetero-junction of the oxide substrate and the oxide thin layer.
摘要翻译：本发明涉及具有异质结氧化物膜结构的电阻随机存取存储器件，其能够使用由异质结氧化物界面产生的二维电子气体作为电阻随机存取存储器件的低电极，异相结合氧化物膜结构以及通过利用二维电子气的耗尽特性使Ion / Ioff最大化的方法及其制造方法。根据本发明的具有异质结氧化物膜结构的电阻随机存取存储器件包括氧化物衬底; 氧化物薄膜层，其设置在所述氧化物基板上并且包括与所述氧化物基板不同的材料; 以及通过设置在氧化物薄膜层上的上电极和氧化物衬底和氧化物薄层的异质结在氧化物衬底和氧化物薄膜上形成的二维电子气层。

72. 发明公开

KR1020140111169A 리튬 이온 이차전지용 실리콘/알루미늄 적층 다층 음극 박막 및 그 제조방법 有权
标题翻译： SI / AL可充电锂离子电池的多层薄膜阳极及其制备方法
公开(公告)号：KR1020140111169A
公开(公告)日：2014-09-18
申请号：KR1020130025052
申请日：2013-03-08
申请人： 한국과학기술연구원
发明人： 최지원 , 바이샬리패틸 , 임해나 , 김진상 , 백승협 , 김성근 , 강종윤 , 윤석진
IPC分类号： H01M4/1395 , H01M4/66 , H01M10/0525
CPC分类号： H01M4/667 , H01M4/0404 , H01M4/1395 , H01M4/661 , H01M10/0525 , Y02E60/122
摘要： The present invention relates to a Si-Al multi-layered cathode thin film for a lithium-ion secondary battery and a method for manufacturing the same, and, more specifically, includes: a silicon layer deposition step for depositing silicon on a substrate; and an aluminum layer deposition step for depositing aluminum on the silicon layer. By alternating the silicon layer deposition step and aluminum layer deposition step more than once, the lithium-ion secondary battery is achieved with high discharging capacity, excellent charging-discharging properties and a long lifespan.
摘要翻译：本发明涉及一种用于锂离子二次电池的Si-Al多层阴极薄膜及其制造方法，更具体地说，涉及：在基板上沉积硅的硅层沉积步骤; 以及用于在硅层上沉积铝的铝层沉积步骤。通过将硅层沉积步骤和铝层沉积步骤交替进行多次，锂离子二次电池具有高放电容量，优异的充电放电性能和长寿命。

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