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    • 71. 发明公开
    • 체적 음향 공진기
    • 大容量声波谐振器
    • KR1020130061399A
    • 2013-06-11
    • KR1020110127686
    • 2011-12-01
    • 삼성전자주식회사
    • 신제식김덕환김철수손상욱송인상이문철
    • H03H9/17
    • H03H9/173H03H3/02H03H9/02118H03H2003/021Y10T29/42
    • PURPOSE: A bulk acoustic resonator is provided to increase coupling coefficient by reducing loss due to acoustic wave in the horizontal direction. CONSTITUTION: A bulk acoustic resonator includes a bulk acoustic resonance unit(110), air edges(120,130) and an air gap(140). The bulk acoustic resonance unit includes a piezoelectric layer(113) located in a first electrode(115) and a second electrode(111) or between the first electrode and second electrode. The air edge is formed in a location. The air gap is located in a lower part of the bulk acoustic resonance unit and an upper part of a substrate, reflects acoustic wave in the vertical direction generated from the bulk acoustic resonance unit.
    • 目的:提供一种体声波谐振器,通过减少由于水波方向的声波引起的损耗来提高耦合系数。 构成:体声波谐振器包括体声共振单元(110),空气边缘(120,130)和气隙(140)。 体声共振单元包括位于第一电极(115)和第二电极(111)中或位于第一电极和第二电极之间的压电层(113)。 空气边缘形成在一个位置。 气隙位于体声共振单元的下部和基板的上部,反射从体声共振单元产生的垂直方向的声波。
    • 72. 发明公开
    • 박막 벌크 음향 공진기 및 박막 벌크 음향 공진기의 제조방법
    • 电影大容量声学谐振器及其制作方法
    • KR1020130044905A
    • 2013-05-03
    • KR1020110109254
    • 2011-10-25
    • 삼성전자주식회사
    • 이문철송인상김덕환김철수손상욱신제식박호수추이징
    • H03H9/17H03H3/007
    • H03H9/173H01L41/297H01L41/312H01L41/332H03H3/02H03H9/175H03H2003/021
    • PURPOSE: A thin film bulk acoustic resonator and a manufacturing method thereof are provided to resolve the crystal property degradation problem of a piezoelectric layer caused by the existing inclined structure. CONSTITUTION: An acoustic resonator(110) includes a first electrode(111), a second electrode, and a piezoelectric layer(113). The piezoelectric layer is located between the first electrode and the second electrode and generates acoustic waves according to the signal applied between the electrodes. An air gap(120) is located in the lower part of the acoustic resonator and reflects the acoustic waves. Anchors(131,133) are located in both sides of the air gap and is formed by the same process. Valleys(141,143) have the air gap; and a gap smaller than the air gap in the boundary surface. An engraving checking layer(160) is located in the upper side of a substrate and interrupts the etching of the substrate when generating the air gap. A membrane(170) is located in the upper part of the air gap, the anchor, and the upper part of the valley.
    • 目的:提供一种薄膜体声波谐振器及其制造方法,以解决由现有的倾斜结构引起的压电层的晶体性质退化问题。 构成:声谐振器(110)包括第一电极(111),第二电极和压电层(113)。 压电层位于第一电极和第二电极之间,并根据施加在电极之间的信号产生声波。 气隙(120)位于声谐振器的下部并反射声波。 锚杆(131,133)位于气隙的两侧,由相同的过程形成。 山谷(141,143)有气隙; 以及比边界面中的气隙小的间隙。 雕刻检查层(160)位于基板的上侧,并且在产生气隙时中断基板的蚀刻。 膜(170)位于气隙的上部,锚固体和谷的上部。
    • 73. 发明公开
    • 체적 음향 공진기 및 체적 음향 공진기를 이용한 듀플렉서
    • 使用大容量声波谐振器的大容量声波谐波器和双工器
    • KR1020130013156A
    • 2013-02-06
    • KR1020110074616
    • 2011-07-27
    • 삼성전자주식회사
    • 신제식송인상김영일김덕환김철수손상욱김형락이재천
    • H03H9/17H01L41/09H03H9/70H01P1/213
    • H03H9/02102H03H9/171H03H9/173H03H9/174H03H9/588H03H9/706
    • PURPOSE: A bulk acoustic wave resonator having a low temperature coefficient frequency value and a duplexer using the bulk acoustic wave resonator are provided to add a compensation layer compensating a temperature coefficient on the top, the bottom or the top and bottom of a piezoelectric layer, thereby regulating the temperature coefficient of the bulk acoustic wave resonator. CONSTITUTION: A bulk acoustic wave resonation unit(210) includes a first electrode made of material diversifying a resonant frequency according to the temperature; a second electrode and a piezoelectric layer(213) placed between the first electrode and the second electrode. At least one compensation layer(220) is made of material compensating a resonant frequency, which changes according to the temperature, to the opposite direction of the change. The compensation layer is placed on the top, the bottom or the top and bottom of the piezoelectric layer. The compensation layer compensates the temperature coefficient of the bulk acoustic wave resonation unit. [Reference numerals] (211) Upper electrode; (213) Piezoelectric layer; (215) Lower electrode; (221,223) Compensation layer
    • 目的:提供一种具有低温度系数频率值的体声波谐振器和使用体声波谐振器的双工器,以在压电层的顶部,底部或顶部和底部添加补偿温度系数的补偿层, 从而调节体声波谐振器的温度系数。 构成:体声波谐振单元(210)包括由根据温度使谐振频率多样化的材料制成的第一电极; 放置在第一电极和第二电极之间的第二电极和压电层(213)。 至少一个补偿层(220)由补偿根据温度而变化的谐振频率与改变的相反方向的材料制成。 补偿层放置在压电层的顶部,底部或顶部和底部。 补偿层补偿体声波谐振单元的温度系数。 (211)上电极; (213)压电层; (215)下电极; (221,223)补偿层
    • 74. 发明公开
    • BAWR을 이용한 밸런스 구조의 RF 듀플렉서 및 RF 필터
    • 射频滤波器和RF双工器的平衡结构使用大容量声波谐振器
    • KR1020120009602A
    • 2012-02-02
    • KR1020100069571
    • 2010-07-19
    • 삼성전자주식회사
    • 신제식김철수송인상김영일김덕환김형락이재천
    • H03H9/70H03H9/54H03H9/56
    • H03H9/706H03H9/542H03H9/568
    • PURPOSE: A radio frequency(RF) duplexer of a balanced structure which uses a bulk acoustic wave resonator(BAWR) and an RF filter are provided to improve the performance of the duplexer by arranging a balance reception output terminal in the duplexer. CONSTITUTION: A radio frequency(RF) duplexer which uses a bulk acoustic wave resonator(BAWR) comprises a BAWR reception filter part(110), a port conversion part(120), and a BAWR transmission filter part(130). The BAWR reception filter part comprises a plurality of BAWRs which is respectively comprised in parallel and series. An input terminal of the BAWR reception filter part is comprised of two input ports for dual input. The input terminal for the dual input is connected to a dual-output port of the port conversion part. The input terminal for the dual input receives a balanced signal. The BAWR transmission filter part is connected to a transmission port through a single-input port.
    • 目的:提供使用体声波谐振器(BAWR)和RF滤波器的平衡结构的射频(RF)双工器,以通过在双工器中布置平衡接收输出端来提高双工器的性能。 构成:使用体声波谐振器(BAWR)的射频(RF)双工器包括BAWR接收滤波器部分(110),端口转换部分(120)和BAWR发送滤波器部分(130)。 BAWR接收滤波器部分包括多个并联和串联的BAWR。 BAWR接收滤波器部分的输入端由两个用于双输入的输入端口组成。 双输入输入端连接到端口转换部分的双输出端口。 双输入输入端接收平衡信号。 BAWR传输滤波器部分通过单输入端口连接到传输端口。
    • 75. 发明公开
    • 콤팩트한 구조의 마이크로 스위치
    • 具有紧凑结构的MICROSWITCH
    • KR1020110138663A
    • 2011-12-28
    • KR1020100058682
    • 2010-06-21
    • 삼성전자주식회사
    • 전국진박완재김철수송인상김덕환신제식강성찬
    • H01H59/00B81B7/04
    • H01H59/0009B81B7/04H01H2221/06
    • PURPOSE: A micro switch with a compact structure is provided to perform scale down and achieve mechanical stability and superior quality by being manufactured by a low temperature process. CONSTITUTION: A micro switch(100) comprises a pause uneven electrode(110), an operation uneven electrode(120), a driving shaft(130), a contact unit(140), and a connection terminal(150). The pause uneven electrode is extended to a first direction in the upper side of a substrate. The operation uneven electrode is corresponded to the pause uneven electrode and is arranged to be parallel to the uneven electrode at a certain interval. The driving shaft is connected with the operation uneven electrode and the first direction to a vertical direction. The contact unit is formed in the one end of the driving shaft. The connection terminal is placed in the traveling direction of the contact unit and the driving shaft and performs switching with the contact unit.
    • 目的:提供具有紧凑结构的微动开关,通过低温工艺制造,实现缩小,实现机械稳定性和优质。 构成:微型开关(100)包括暂停不均匀电极(110),操作不均匀电极(120),驱动轴(130),接触单元(140)和连接端子(150)。 暂停不均匀电极在衬底的上侧延伸到第一方向。 操作不均匀电极对应于暂停不均匀电极,并且以一定间隔布置成平行于不均匀电极。 驱动轴与操作不均匀电极连接,第一方向与垂直方向连接。 接触单元形成在驱动轴的一端。 连接端子位于接触单元和驱动轴的行进方向上,并与接触单元进行切换。
    • 77. 发明公开
    • 체적 탄성파 공진기를 이용한 위상 천이 장치
    • 使用大容量声波谐振器的相位切换器
    • KR1020110026079A
    • 2011-03-15
    • KR1020090083818
    • 2009-09-07
    • 삼성전자주식회사
    • 신제식안달김덕환송인상김철수박윤권김형락
    • H03H9/66H03H9/17H03H9/15
    • H03H9/36H03H9/542H03H9/605H03H9/66
    • PURPOSE: A phase shifting device using a bulk acoustic wave resonator is provided to use a phase change feature for the frequency of the bulk acoustic wave resonator, thereby reducing the loss and size of a bulk acoustic wave. CONSTITUTION: A phase shifting device is composed of the first bulk acoustic wave resonator(110), the second bulk acoustic wave resonator(120), the first port(101), the second port(102), and the first capacitor(130). The first terminal(111) of the first bulk acoustic wave resonator, the first port, and the first terminal(131) of the first capacitor are connected each other. The first terminal(121) of the second bulk acoustic wave resonator, the second port, and the second terminal(132) of the first capacitor are connected each other. The second terminal(112) of the first bulk acoustic wave resonator and the second terminal(122) of the second bulk acoustic wave resonator are grounded.
    • 目的:提供使用体声波谐振器的相移装置,以使用用于体声波谐振器的频率的相变特征,从而减小体声波的损耗和尺寸。 构成:移相装置由第一体声波谐振器(110),第二体声波谐振器(120),第一端口(101),第二端口(102)和第一电容器(130)构成, 。 第一体积波谐振器的第一端子(111),第一电容器的第一端口和第一端子(131)彼此连接。 第一电容器的第二体声波谐振器的第一端子(121)和第二端子(132)彼此连接。 第一体声波谐振器的第二端子(112)和第二体声波谐振器的第二端子(122)接地。
    • 79. 发明公开
    • 듀얼-입력 듀얼-출력의 필터를 이용한 멀티-대역의 라디오 주파수 신호 송수신 시스템
    • 使用双输入双输出滤波器发送/接收无线电频率信号的系统
    • KR1020110007385A
    • 2011-01-24
    • KR1020090064882
    • 2009-07-16
    • 삼성전자주식회사
    • 송인상김덕환김철수박윤권신제식
    • H04B1/44H04B1/50
    • H04B1/006H04B1/0053H04B1/52H04B1/44H04B1/50
    • PURPOSE: A system for transmitting/receiving a multi-band radio frequency signal using a dual-input dual-output filter is provided to arrange a dual-input dual-output band pass filter in a rear end of an analog RF area, thereby reducing the number of devices. CONSTITUTION: The first filter unit(120) includes at least one single-input single-output BPF(Band Pass Filter). The second filter unit(130) includes at least one dual-input dual-output BPF. The first circuit unit(140) transmits an RF signal to the first filter unit and transmits an RF signal of the first filter unit to an antenna terminal(110). The second circuit unit(160) transmits a filtered signal of the second filter unit to a digital signal processing circuit or transmits a signal of the digital signal processing circuit to the second filter unit.
    • 目的:提供一种使用双输入双输出滤波器发送/接收多频带​​射频信号的系统,用于在模拟RF区域的后端布置双输入双输出带通滤波器,从而减少 设备数量。 构成:第一滤波器单元(120)包括至少一个单输入单输出BPF(带通滤波器)。 第二过滤器单元(130)包括至少一个双输入双输出BPF。 第一电路单元(140)将RF信号发送到第一滤波器单元,并将第一滤波器单元的RF信号发送到天线端子(110)。 第二电路单元(160)将第二滤波器单元的滤波信号发送到数字信号处理电路,或者将数字信号处理电路的信号发送到第二滤波器单元。
    • 80. 发明公开
    • 공진기 및 그 제조 방법
    • 谐振器及其方法
    • KR1020080015632A
    • 2008-02-20
    • KR1020060077224
    • 2006-08-16
    • 삼성전자주식회사
    • 이주호박해석이상훈김덕환설상철
    • H03H9/15
    • H03H3/02H03H9/02118H03H9/173H03H2003/021
    • A resonator and a method for manufacturing the same are provided to improve a resonance characteristic by forming electrodes to have different thicknesses in an active region where resonance occurs and an inactive region where resonance does not occur. A resonator includes a substrate(110). A resonant unit(135) includes a first electrode(140), a piezoelectric membrane(150), and a second electrode(160) sequentially stacked on the substrate. The resonant unit includes an active region where resonance occurs and an inactive region where resonance does not occur. At least one of the first electrode and the second electrode allows one portion of the inactive region formed to have a thickness different from that of the active region. At least one of the first electrode and the second electrode includes a metal membrane(170) formed at one portion of the inactive region for the thickness of the inactive region to be thicker than that of the active region. The metal membrane is formed at least one position of a lower surface of the first electrode, an upper surface of the first electrode, the second electrode, and an upper surface of the second electrode.
    • 提供了一种谐振器及其制造方法,以通过在发生共振的有源区域中形成具有不同厚度的电极和不发生共振的非活性区域来改善谐振特性。 谐振器包括衬底(110)。 谐振单元(135)包括依次层叠在基板上的第一电极(140),压电膜(150)和第二电极(160)。 共振单元包括发生共振的有源区和不发生共振的非活性区。 第一电极和第二电极中的至少一个允许形成的非活性区域的一部分具有与活性区域不同的厚度。 第一电极和第二电极中的至少一个包括形成在非活性区域的一部分处的金属膜(170),以使钝化区域的厚度比活性区域的厚度厚。 金属膜形成在第一电极的下表面,第一电极的上表面,第二电极和第二电极的上表面的至少一个位置。