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    • 71. 发明授权
    • Inductor element and integrated electronic component
    • 电感元件和集成电子元件
    • US07508291B2
    • 2009-03-24
    • US11892451
    • 2007-08-23
    • Tsuyoshi MatsumotoXiaoyu MiYoshihiro Mizuno
    • Tsuyoshi MatsumotoXiaoyu MiYoshihiro Mizuno
    • H01F5/00
    • H01F19/04H03H2001/0092
    • An inductor element and an integrated electronic component that facilitate achieving a higher Q value are provided. The inductor element includes a substrate, a coil unit spaced from the substrate, and a plurality of conductive columns. The coil unit includes a plurality of spiral coils each constituted of a spiral-shaped coil lead. The spiral coils are disposed such that their winding directions are the same, and that the coil lead of each spiral coil includes a portion extending between the coil lead of at least one of the other spiral coils. End portions of the spiral coils are fixed to the substrate via the conductive columns. The integrated electronic component of the invention includes such inductor element.
    • 提供了有助于实现更高Q值的电感元件和集成电子元件。 电感器元件包括衬底,与衬底间隔开的线圈单元和多个导电柱。 线圈单元包括由螺旋形线圈引线构成的多个螺旋线圈。 螺旋线圈被布置成使得它们的缠绕方向相同,并且每个螺旋线圈的线圈引线包括在至少一个其它螺旋线圈的线圈引线之间延伸的部分。 螺旋线圈的端部通过导电柱固定到基板。 本发明的集成电子部件包括这种电感元件。
    • 77. 发明申请
    • Magnetic head device having slider and magnetic function unit
    • 具有滑块和磁功能单元的磁头装置
    • US20070047145A1
    • 2007-03-01
    • US11506020
    • 2006-08-17
    • Tsuyoshi Matsumoto
    • Tsuyoshi Matsumoto
    • G11B5/60
    • G11B5/60
    • A magnetic head device is disclosed. The magnetic head device having a levitation attitude formed by an air stream on a surface thereof when a recording medium moves. A levitation height of a magnetic function unit can be stabilized even when air density of an operating environment is changed. In a middle region of a slider of a magnetic head device, a deep concave bottom portion is provided and a levitation pressure is not substantially generated. The levitation is exerted to a front positive pressure surface located in front of the middle region and a rear positive pressure surface located in the rear of the middle region.
    • 公开了一种磁头装置。 磁头装置在记录介质移动时具有由表面上的气流形成的悬浮姿态。 即使改变操作环境的空气密度,也可以使磁功能单元的悬浮高度稳定。 在磁头装置的滑块的中间区域中,设置深凹底部,并且基本上不产生悬浮压力。 悬浮被施加到位于中间区域前方的前正压表面和位于中间区域后部的后正压表面。
    • 79. 发明申请
    • Method and apparatus for plasma processing
    • 等离子体处理方法和装置
    • US20050230049A1
    • 2005-10-20
    • US10902032
    • 2004-07-30
    • Ryoji NishioTadamitsu KanekiyoYoshiyuki OotaTsuyoshi Matsumoto
    • Ryoji NishioTadamitsu KanekiyoYoshiyuki OotaTsuyoshi Matsumoto
    • H01L21/3065C23F1/00H01J37/32
    • G06F17/5081G06F17/5086H01J37/32082H01J37/32642H01J37/32935H01L21/67069H01L21/6875
    • The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.
    • 本发明提供一种等离子体处理装置,其能够最小化晶片周边周围的电位分布的不均匀性,并且跨晶片表面提供均匀的工艺。 该装置配备有由电介质,导体或半导体形成的并且施加RF的聚焦环,其设计被优化用于基于澄清用于使晶片上的鞘等离子体界面平坦化的物理条件的设计技术进行处理 以及聚焦环上方的鞘 - 等离子体界面。 聚焦环的表面电压被确定为不低于用于防止由晶片加工引起的反应产物沉积在其上的最小电压。 聚焦环的表面高度,表面电压,材料和结构被优化,使得形成在聚焦环表面上的离子鞘的高度相等或具有在离子鞘高度适当的公差范围内的高度差 形成在晶片表面上。 通过考虑由聚焦环的消耗引起的变化,建立适当的公差范围来实现结构的优化。