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    • 78. 发明授权
    • Stack microelectronic assemblies
    • 堆叠微电子组件
    • US07545029B2
    • 2009-06-09
    • US11506472
    • 2006-08-18
    • Stuart E. WilsonRonald GreenRichard Dewitt CrispGiles Humpston
    • Stuart E. WilsonRonald GreenRichard Dewitt CrispGiles Humpston
    • H01L23/02H05K7/00H01L21/00
    • H01L23/66H01L25/105H01L25/16H01L2224/48091H01L2224/48227H01L2225/1023H01L2225/1058H01L2225/107H01L2924/09701H01L2924/19106H01L2924/30107H01L2924/3011H01L2924/3511H01L2924/00014H01L2924/00
    • A stacked microelectronic assembly includes a base substrate having conductive elements projecting from a bottom surface thereof and a first microelectronic subassembly underlying a bottom surface of the base substrate. The first microelectronic subassembly includes a first dielectric substrate, a first microelectronic element connected with the first dielectric substrate and first conductive posts projecting from the first dielectric substrate toward the bottom surface of the base substrate for electrically interconnecting the first microelectronic element and the base substrate. The assembly also has a second microelectronic subassembly overlying the base substrate. The second microelectronic subassembly includes a second dielectric substrate, a second microelectronic element connected with the second dielectric substrate and second conductive posts projecting toward the top surface of the base substrate for electrically interconnecting the second microelectronic element and the base substrate. The first microelectronic subassembly has a first height and the conductive elements projecting from the bottom surface of the base substrate have a second height that is greater than the first height of the first microelectronic subassembly.
    • 堆叠的微电子组件包括具有从其底表面突出的导电元件的基底基板和位于基底基底的底表面下方的第一微电子子组件。 第一微电子子组件包括第一电介质衬底,与第一电介质衬底连接的第一微电子元件和从第一电介质衬底向基底衬底的底表面突出的第一导电柱,用于将第一微电子元件和基底衬底电互连。 组件还具有覆盖在基底基板上的第二微电子子组件。 第二微电子子组件包括第二电介质衬底,与第二电介质衬底连接的第二微电子元件和朝向基底衬底的顶表面突出的第二导电柱,用于电连接第二微电子元件和基底衬底。 第一微电子子组件具有第一高度,并且从基底衬底的底表面突出的导电元件具有大于第一微电子子组件的第一高度的第二高度。