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71. 发明授权

US4016083A Spirally-wound membrane-type separator module capable of reversing the direction of liquid flow 失效
标题翻译：螺旋缠绕的膜式分离器模块能够反转液体流动的方向
公开(公告)号：US4016083A
公开(公告)日：1977-04-05
申请号：US640754
申请日：1975-12-15
申请人： Yasuhiro Sakaguchi , Junichi Koike , Takehisa Kubo
发明人： Yasuhiro Sakaguchi , Junichi Koike , Takehisa Kubo
IPC分类号： B01D61/02 , B01D35/16 , B01D61/08 , B01D61/14 , B01D61/18 , B01D63/10 , B01D65/02 , B01D65/08 , B01J13/00 , B01J31/00 , B01D31/00
CPC分类号： B01D65/02 , B01D63/10 , B01D2313/02 , B01D2321/10 , B01D2321/2083
摘要： A spirally-wound membrane-type separator module capable of reversing the direction of liquid flow comprises an outer cylindrical pressure vessel, a spirally-wound membrane element disposed within said outer vessel and extending in the axial direction thereof, and a plurality of brine seals disposed in the annular space defined between the outer periphery of said membrane element and the inner periphery of said outer vessel, each brine seal including a ring-like portion fitted on the outer periphery of said element and a cup-shaped flange portion sealingly engaging the inner periphery of said outer vessel, said brine seals being arranged close to one another in the direction of axis of the element with the flange portions of the brine seals being directed in opposite directions.
摘要翻译：能够反转液体流动方向的螺旋卷绕膜型分离器模块包括外圆柱形压力容器，设置在所述外容器内并沿其轴向延伸的螺旋缠绕的膜元件，并且设置多个盐水密封件在限定在所述膜元件的外周和所述外容器的内周之间的环形空间中，每个盐水密封包括装配在所述元件的外周上的环状部分和密封地接合所述内容器的杯状凸缘部分所述外部容器的周边，所述盐水密封件沿着所述元件的轴线方向彼此靠近地布置，所述盐水密封件的凸缘部分以相反的方向指向。

72. 发明申请

US20160017478A1 HARD FILM FOR MACHINING TOOLS AND HARD FILM-COATED METAL MACHINING TOOL 有权
标题翻译：加工工具用硬膜和硬膜镀金属加工工具
公开(公告)号：US20160017478A1
公开(公告)日：2016-01-21
申请号：US14775419
申请日：2013-03-28
申请人： Masatoshi SAKURAI , Mei WANG , Toshihiro OHCHI , Yuji SUTOU , Junichi KOIKE , Shoko KOMIYAMA
发明人： Masatoshi SAKURAI , Mei WANG , Toshihiro OHCHI , Yuji SUTOU , Junichi KOIKE , Shoko KOMIYAMA
IPC分类号： C23C14/06
CPC分类号： C23C14/0676 , C23C14/06 , C23C14/0635 , C23C14/0641
摘要： A tool hard film that is to be disposed as coating on a surface of a tool, the tool hard film being a TiCrMoWV oxycarbide, oxynitride, or oxycarbonitride having a phase with a NaCl-type crystal structure as a main phase, the oxycarbide, oxynitride, or oxycarbonitride having fine crystals due to introduction of oxygen.
摘要翻译：作为工具表面上涂布的工具硬质膜，工具硬质膜是具有NaCl型晶体结构相作为主相的TiCrMoWV碳氧化物，氧氮化物或碳氮氧化物，氧化碳，氧氮化物或由于引入氧而具有细晶体的碳氮氧化物。

73. 发明授权

US09082821B2 Method for forming copper interconnection structures 有权
标题翻译：形成铜互连结构的方法
公开(公告)号：US09082821B2
公开(公告)日：2015-07-14
申请号：US13252033
申请日：2011-10-03
申请人： Junichi Koike , Akihiro Shibatomi
发明人： Junichi Koike , Akihiro Shibatomi
IPC分类号： H01K3/10 , H01L21/768 , H01L23/532
CPC分类号： H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/12044 , Y10T29/49163 , Y10T29/49165 , Y10T29/49204 , H01L2924/00
摘要： A method for forming a copper interconnection structure includes the steps of forming an opening in an insulating layer, forming a copper alloy layer including a metal element on an inner surface of the opening, and conducting a heat treatment on the copper alloy layer so as to form a barrier layer. An enthalpy of oxide formation for the metal element is lower than the enthalpy of oxide formation for copper. The heat treatment is conducted at temperatures ranging from 327° C. to 427° C. and for a time period ranging from 1 minute to 80 minutes.
摘要翻译：一种形成铜互连结构的方法包括在绝缘层上形成开口的步骤，在开口的内表面上形成包含金属元素的铜合金层，并在铜合金层上进行热处理，以便形成阻挡层。金属元素的氧化物形成焓低于铜的氧化物形成焓。热处理在327℃至427℃的温度下进行，时间范围为1分钟至80分钟。

74. 发明授权

US08859421B2 Manganese oxide film forming method, semiconductor device manufacturing method and semiconductor device 有权
标题翻译：氧化锰形成方法，半导体器件制造方法和半导体器件
公开(公告)号：US08859421B2
公开(公告)日：2014-10-14
申请号：US13267227
申请日：2011-10-06
申请人： Koji Neishi , Junichi Koike , Kenji Matsumoto
发明人： Koji Neishi , Junichi Koike , Kenji Matsumoto
IPC分类号： H01L21/44 , H01L21/4763 , H01L23/48 , H01L23/52 , H01L29/40 , H01L23/532 , H01L21/768 , C23C16/40
CPC分类号： H01L23/53238 , C23C16/40 , C23C16/401 , C23C16/406 , H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L21/76867 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： There is provided a manganese oxide film forming method capable of forming a manganese oxide film having high adhesivity to Cu. In the manganese oxide film forming method, a manganese oxide film is formed on an oxide by supplying a manganese-containing gas onto the oxide. A film forming temperature for forming the manganese oxide film is set to be equal to or higher than about 100° C. and lower than about 400° C.
摘要翻译：提供了能够形成对Cu具有高粘合性的氧化锰膜的氧化锰膜形成方法。在氧化锰膜形成方法中，通过向氧化物供给含锰气体，在氧化物上形成氧化锰膜。用于形成氧化锰膜的成膜温度设定为等于或高于约100℃且低于约400℃

75. 发明申请

US20130168671A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130168671A1
公开(公告)日：2013-07-04
申请号：US13807901
申请日：2011-06-30
申请人： Junichi Koike , Pilsang Yun , Hideaki Kawakami
发明人： Junichi Koike , Pilsang Yun , Hideaki Kawakami
IPC分类号： H01L29/417
CPC分类号： H01L29/417 , H01L29/45 , H01L29/78618 , H01L29/7869 , H01L33/26 , H01L33/40
摘要： An ohmic contact between an electrode and a semiconductor layer is more stably formed and an electrical contact resistance between them is further reduced.A semiconductor device comprises a semiconductor layer 103 composed of an oxide semiconductor material containing indium, an ohmic electrode 107 provided on the semiconductor layer 103 and having an ohmic contact with the semiconductor layer 103, and an intermediate layer 106 provided between the semiconductor layer 103 and the ohmic electrode 107, wherein the intermediate layer 106 includes a first region 106a whose indium atomic concentration is greater than that of an interior of the semiconductor layer 103 and a second region 106b whose indium atomic concentration is less than that of the first region.
摘要翻译：电极和半导体层之间的欧姆接触更稳定地形成，并且它们之间的电接触电阻进一步降低。半导体器件包括由包含铟的氧化物半导体材料构成的半导体层103，设置在半导体层103上并与半导体层103具有欧姆接触的欧姆电极107以及设置在半导体层103和欧姆电极107，其中中间层106包括其铟原子浓度大于半导体层103的内部的第一区域106a和铟原子浓度小于第一区域的第二区域106b。

76. 发明授权

US08420535B2 Copper interconnection, method for forming copper interconnection structure, and semiconductor device 有权
标题翻译：铜互连，形成铜互连结构的方法和半导体器件
公开(公告)号：US08420535B2
公开(公告)日：2013-04-16
申请号：US13563976
申请日：2012-08-01
申请人： Junichi Koike , Akihiro Shibatomi
发明人： Junichi Koike , Akihiro Shibatomi
IPC分类号： H01L21/44
CPC分类号： H01L21/7685 , H01L21/76831 , H01L21/76834 , H01L21/76843 , H01L21/76849 , H01L21/76867 , H01L21/76873 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A copper interconnection structure includes an insulating layer, an interconnection body including copper and a barrier layer surrounding the interconnection body. The barrier layer includes a first barrier layer formed between a first portion of the interconnection body and the insulating layer. The first portion of the interconnection body is part of the interconnection body that faces the insulating layer. The barrier layer also includes a second barrier layer formed on a second portion of the interconnection body. The second portion of the interconnection body is part of the interconnection body not facing the insulating layer. Each of the first and the second barrier layers is formed of an oxide layer including manganese, and each of the first and the second barrier layers has a position where the atomic concentration of manganese is maximized in their thickness direction of the first and the second barrier layers.
摘要翻译：铜互连结构包括绝缘层，包括铜的互连体和围绕互连体的阻挡层。阻挡层包括在互连体的第一部分和绝缘层之间形成的第一阻挡层。互连体的第一部分是面向绝缘层的互连体的一部分。阻挡层还包括形成在互连体的第二部分上的第二阻挡层。互连体的第二部分是不面向绝缘层的互连体的一部分。第一和第二阻挡层中的每一个由包括锰的氧化物层形成，并且第一和第二阻挡层中的每一个具有锰的原子浓度在其第一和第二势垒的厚度方向上最大化的位置层。

77. 发明申请

US20120219724A1 METHOD FOR FORMING METAL OXIDE FILM, METHOD FOR FORMING MANGANESE OXIDE FILM, AND COMPUTER-READABLE STORAGE MEDIUM 审中-公开
标题翻译：形成金属氧化物膜的方法，形成锰氧化物膜的方法和计算机可读存储介质
公开(公告)号：US20120219724A1
公开(公告)日：2012-08-30
申请号：US13497929
申请日：2010-09-17
申请人： Koji Neishi , Junichi Koike , Kenji Matsumoto
发明人： Koji Neishi , Junichi Koike , Kenji Matsumoto
IPC分类号： C23C16/18 , C23C16/52 , C23C16/50
CPC分类号： C23C16/40 , H01L21/28556 , H01L21/76843 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In a method for forming a metal oxide film, by which excellent adhesion between the film and Cu can be provided, a gas containing an organometallic compound is supplied to a base, and the metal oxide film is formed on the base. After forming the metal oxide film on the base by supplying the organometallic compound to the base, the metal oxide film is exposed to the oxygen-containing gas or oxygen-containing plasma in the final step of the process of forming the metal oxide film.
摘要翻译：在形成金属氧化物膜的方法中，通过可以提供膜和Cu之间的优异的粘附性，将含有有机金属化合物的气体供应到基底，并且在基底上形成金属氧化物膜。在通过向基体供给有机金属化合物而在基材上形成金属氧化物膜之后，在形成金属氧化物膜的工序的最后步骤中，将金属氧化物膜暴露于含氧气体或含氧等离子体。

78. 发明申请

US20120135612A1 FILM FORMING METHOD, PRETREATMENT DEVICE, AND PROCESSING SYSTEM 有权
标题翻译：电影形成方法，预处理装置和处理系统
公开(公告)号：US20120135612A1
公开(公告)日：2012-05-31
申请号：US13378535
申请日：2010-06-16
申请人： Kenji Matsumoto , Hitoshi Itoh , Hidenori Miyoshi , Shigetoshi Hosaka , Hiroshi Sato , Koji Neishi , Junichi Koike
发明人： Kenji Matsumoto , Hitoshi Itoh , Hidenori Miyoshi , Shigetoshi Hosaka , Hiroshi Sato , Koji Neishi , Junichi Koike
IPC分类号： H01L21/31 , C23C16/44 , C23C16/02
CPC分类号： H01L21/76814 , C23C16/02 , C23C16/40 , H01L21/28556 , H01L21/3105 , H01L21/32051 , H01L21/76831 , H01L21/76844 , H01L21/76867
摘要： A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.
摘要翻译：公开了一种成膜方法，其中在被处理物体上形成包含锰的薄膜，其表面上由低k膜构成并具有凹陷的绝缘层。该方法包括亲水化步骤，其中绝缘层的表面被亲水化以使表面亲水，并且薄膜形成步骤通过进行成膜在亲水化绝缘层的表面上形成含有锰的薄膜在亲水化绝缘层的表面上使用含锰材料气体的方法。因此，在由具有低介电常数的低k膜构成的绝缘层的表面上有效地形成了包含锰的薄膜，例如MnO x膜。

79. 发明授权

US08164701B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US08164701B2
公开(公告)日：2012-04-24
申请号：US12583165
申请日：2009-08-13
申请人： Junichi Koike , Hideaki Kawakami
发明人： Junichi Koike , Hideaki Kawakami
IPC分类号： G02F1/136
CPC分类号： G02F1/1368 , G02F1/134363 , G02F1/136213 , G02F1/136227 , H01L27/124 , H01L29/458 , H01L29/786
摘要： In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.
摘要翻译：在具有薄膜晶体管（TFT）的液晶显示器（LCD）装置中，TFT包括源电极，漏电极和半导体层。源电极和漏电极中的至少一个包括包括铜的第一层和形成氧化物层并覆盖第一层的第二层。当在半导体层和所述源电极或漏电极之间施加电压时，半导体层与包括所述第一和第二层的所述源电极或漏电极具有基本线性的电流 - 电压关系。

80. 发明申请

US20120003390A1 COPPER INTERCONNECTION STRUCTURE AND METHOD FOR FORMING COPPER INTERCONNECTIONS 失效
标题翻译：铜相互连接结构和形成铜互连的方法
公开(公告)号：US20120003390A1
公开(公告)日：2012-01-05
申请号：US13230608
申请日：2011-09-12
申请人： Junichi Koike , Akihiro Shibatomi
发明人： Junichi Koike , Akihiro Shibatomi
IPC分类号： B05D1/38 , B05D3/02
CPC分类号： H01L21/76843 , H01L21/2855 , H01L21/76831 , H01L21/76846 , H01L21/76849 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A copper interconnection structure includes an insulating layer, an interconnection body including copper in an opening provided on the insulating layer, and a diffusion barrier layer formed between the insulating layer and the interconnection body. The diffusion barrier layer includes an oxide layer including manganese having a compositional ratio of oxygen to manganese (y/x) less than 2.
摘要翻译：铜互连结构包括绝缘层，在绝缘层上设置的开口中包括铜的互连体，以及形成在绝缘层和互连体之间的扩散阻挡层。扩散阻挡层包括含有氧与锰的组成比（y / x）小于2的锰的氧化物层。

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