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71. 发明授权

US07325332B2 Clothing dryer 失效
标题翻译：衣物烘干机
公开(公告)号：US07325332B2
公开(公告)日：2008-02-05
申请号：US11209671
申请日：2005-08-24
申请人： Young Suk Chung , Jung Ho Lee
发明人： Young Suk Chung , Jung Ho Lee
IPC分类号： F26B11/02
CPC分类号： D06F58/22
摘要： A clothing dryer capable of removing impurities, such as dust, accumulated in a hot air outlet duct thereof. The clothing dryer includes a drying tub to dry laundry contained therein using hot air supplied thereto, a hot air outlet duct to discharge the hot air, coming from the drying tub, to the outside, and a connecting unit to connect an external suction device to the hot air outlet duct. Accordingly, impurities, such as dust, accumulated in the hot air outlet duct can be removed by a suction force of the suction device, thereby enabling the cleaning of the hot air outlet duct.
摘要翻译：能够除去积存在其热风出口管内的灰尘等杂质的衣物烘干机。衣物烘干机包括：干燥桶，用于供应热风的干燥衣物，将来自干燥桶的热空气排出到外部的热空气出口管道;以及连接单元，将外部抽吸装置连接到热风出口管道。因此，积存在热风出口管道中的灰尘等杂质可以通过抽吸装置的吸力除去，从而能够清洁热风出口管道。

72. 发明授权

US07271066B2 Semiconductor device and a method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07271066B2
公开(公告)日：2007-09-18
申请号：US11086286
申请日：2005-03-23
申请人： Kwan Yong Lim , Heung Jae Cho , Jung Ho Lee
发明人： Kwan Yong Lim , Heung Jae Cho , Jung Ho Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/66651 , H01L21/28123
摘要： Disclosed are a semiconductor devices and method of fabricating the same. Anti-etch films are formed in the top corners of the device isolation film using a material that has a different etch selectivity ratio from nitride or oxide and is not etched in an oxide gate pre-cleaning process. It is thus possible to prevent formation of a moat at the top corners of the device isolation film and the gate oxide film from being thinly formed, thereby improving reliability and electrical characteristics of the device.
摘要翻译：公开了半导体器件及其制造方法。使用具有与氮化物或氧化物不同的蚀刻选择比的材料并且在氧化物栅极预清洁工艺中不被蚀刻的材料在器件隔离膜的顶角形成防蚀刻膜。因此，可以防止在器件隔离膜和栅极氧化膜的顶角形成护城河，从而提高器件的可靠性和电气特性。

73. 发明申请

US20060209245A1 Liquid crystal display and a method for fabricating the same 审中-公开
公开(公告)号：US20060209245A1
公开(公告)日：2006-09-21
申请号：US11313965
申请日：2005-12-22
申请人： Joong-Hyun Mun , Jang-Kun Song , Yong-Woo Choi , Bo-Sung Kim , Kwan-Wook Jung , Jung-Ho Lee , Hyo-Rak Nam
发明人： Joong-Hyun Mun , Jang-Kun Song , Yong-Woo Choi , Bo-Sung Kim , Kwan-Wook Jung , Jung-Ho Lee , Hyo-Rak Nam
IPC分类号： G02F1/1339
CPC分类号： G02F1/136286 , G02F1/133345 , G02F1/133707 , G02F1/13394 , G02F1/134336 , G02F1/136213 , G02F1/136227 , G02F1/1368 , G02F2001/13398 , G02F2001/134372 , G02F2001/136231 , G02F2201/123 , H01L27/124 , H01L29/78669
摘要： A liquid crystal display includes first and second substrates. The first substrate has a first insulating substrate, and a pixel electrode formed on the first insulating substrate with a first opening pattern. The second substrate has a second insulating substrate, and a common electrode formed on the second insulating substrate with a second opening pattern. The first and the second opening patterns proceed parallel to each other while being arranged in an alternate manner. A liquid crystal material is injected between the first and the second substrates. A spacer is positioned at an end of the second opening pattern to maintain the distance between the first and the second substrates.

74. 发明授权

US07053005B2 Method of forming a silicon oxide layer in a semiconductor manufacturing process 有权
标题翻译：在半导体制造工艺中形成氧化硅层的方法
公开(公告)号：US07053005B2
公开(公告)日：2006-05-30
申请号：US10779733
申请日：2004-02-18
申请人： Jung-Ho Lee , Dong-Jun Lee , Jung-Sik Choi
发明人： Jung-Ho Lee , Dong-Jun Lee , Jung-Sik Choi
IPC分类号： H01L21/02
CPC分类号： H01L27/10894 , C23C18/1212 , C23C18/122 , C23C18/1279 , C23C18/1283 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/31051 , H01L21/3125 , H01L21/316 , H01L21/31612 , H01L21/76229 , H01L27/1052 , H01L27/10882 , Y10T428/31663
摘要： A method of forming a silicon oxide layer in a semiconductor manufacturing process includes forming a planar spin on glass (SOG) layer by coating an SOG composition onto a semiconductor substrate having a stepped portion formed thereon, pre-baking the substrate at a temperature of from about 100 to about 500° C. for about 1 to about 10 minutes, maintaining a loading temperature of a furnace into which the substrate will be loaded at about 500° C. or less, loading the substrate into the furnace, and main-baking the substrate at a temperature of from about 500 to about 1200° C. for about 10 to about 120 minutes to form a silicon oxide layer on the substrate. The SOG layer is transformed into the silicon oxide layer through an optimized process condition. Thus, the silicon oxide layer may have minimal defects and a good layer property.
摘要翻译：在半导体制造工艺中形成氧化硅层的方法包括通过将SOG组合物涂覆到其上形成有阶梯部分的半导体衬底上，在玻璃（SOG）层上形成平面自旋，约100至约500℃约1至约10分钟，保持基材将在约500℃或更低的温度下加载到其中的炉的装载温度，将基底装入炉中，并将主烘烤该衬底在约500至约1200℃的温度下进行约10至约120分钟，以在衬底上形成氧化硅层。 SOG层通过优化的工艺条件转化为氧化硅层。因此，氧化硅层可以具有最小的缺陷和良好的层特性。

75. 发明申请

US20060080557A1 Storage medium storing multimedia data for providing moving image reproduction function and programming function, and apparatus and method for reproducing moving image 审中-公开
标题翻译：存储用于提供运动图像再现功能和编程功能的多媒体数据的存储介质，以及用于再现运动图像的装置和方法
公开(公告)号：US20060080557A1
公开(公告)日：2006-04-13
申请号：US11245337
申请日：2005-10-07
申请人： Kwang-min Kim , Jung-ho Lee , Duhee Lee
发明人： Kwang-min Kim , Jung-ho Lee , Duhee Lee
IPC分类号： G06F12/14 , H04L9/32 , G06F11/30
CPC分类号： G11B27/329 , G11B27/105 , G11B27/11 , G11B2020/1288 , G11B2220/2541 , G11B2220/2562
摘要： A storage medium storing multimedia data for providing a moving image reproduction function and a programming function, and an apparatus and method for reproducing a moving image from the storage medium the apparatus including a storage unit which stores the program data downloaded from the storage medium or from a network and download management information indicating whether the downloaded program data can be executed independently without the storage medium; a reading unit which reads the downloaded program data and the download management information from the storage unit; and a reproduction unit which reproduces the downloaded program data with reference to the download management information. Therefore, it is possible to provide not only a typical moving image reproduction function but also a user interaction function and/or other additional functions to a user and to independently execute a program application downloaded to a local storage from a storage medium or from an external database via a network without the storage medium.
摘要翻译：一种存储用于提供运动图像再现功能和编程功能的多媒体数据的存储介质，以及用于从存储介质再现运动图像的装置和方法，该装置包括存储单元，该存储单元存储从存储介质下载的程序数据网络和下载管理信息，指示是否可以独立地执行下载的程序数据而没有存储介质; 读取单元，其从存储单元读取下载的程序数据和下载管理信息; 以及再现单元，其根据下载管理信息再现下载的程序数据。因此，不仅可以向用户提供典型的运动图像再现功能，还可以向用户提供用户交互功能和/或其他附加功能，并且独立地从存储介质或从外部提供下载到本地存储器的程序应用数据库通过网络没有存储介质。

76. 发明授权

US06979604B2 Method for forming pattern on substrate and method for fabricating liquid crystal display using the same 失效
标题翻译：在基板上形成图案的方法及使用该方法制造液晶显示器的方法
公开(公告)号：US06979604B2
公开(公告)日：2005-12-27
申请号：US10469495
申请日：2002-03-05
申请人： Young-Mi Tak , Woon-Yong Park , Jung-Ho Lee , Mun-Pyo Hong , Kyuha Chung
发明人： Young-Mi Tak , Woon-Yong Park , Jung-Ho Lee , Mun-Pyo Hong , Kyuha Chung
IPC分类号： G02F1/1368 , G02F1/1333 , G02F1/1362 , G03F7/00 , G03F7/20 , H01L21/475 , G03C5/56
CPC分类号： G03F7/0007 , G02F1/1362 , G02F2001/13625 , G03F7/0035 , Y10S438/946
摘要： The present invention relates to a method of forming a pattern on a substrate and a method of manufacturing a liquid crystal display panel using the same. In order to decrease stitch defect, the shot boundary lines for respective layers of patterns do not overlap each other to be dispersed. Specifically, according to a method of forming patterns of the present invention, after a first material layer is first formed on a substrate, a first pattern is formed by performing a first photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the first material layer. Subsequently, after a second material layer is formed on the first pattern, a second pattern is formed by performing a second photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the second material layer. The shot boundary line in the second photo etching is spaced apart from the shot boundary line in the first photo etching. A liquid crystal display panel is manufactured by using this forming method.
摘要翻译：本发明涉及在基板上形成图案的方法以及使用该图案的液晶显示面板的制造方法。为了减少针迹缺陷，各层图案的拍摄边界线彼此不重叠以分散。具体而言，根据本发明的图案的形成方法，首先在基板上形成第一材料层后，通过进行第一光蚀刻而形成第一图案，所述第一图案蚀刻包括具有至少两个区域的分光曝光在第一材料层上拍摄边界线。随后，在第一图案上形成第二材料层之后，通过在第二材料层上进行至少两个区域的至少两个区域的至少两个区域进行包括分光照射的第二光蚀刻来形成第二图案。在第一光刻蚀中，第二光蚀刻中的照射边界线与第一光蚀刻中的照射边界线隔开。通过使用该形成方法制造液晶显示面板。

77. 发明申请

US20050249481A1 Storage medium storing application data providing programming function, and apparatus and method for reproducing the application 审中-公开
标题翻译：存储提供编程功能的应用数据的存储介质，以及用于再现应用的装置和方法
公开(公告)号：US20050249481A1
公开(公告)日：2005-11-10
申请号：US11113185
申请日：2005-04-25
申请人： Kwang-min Kim , Jung-ho Lee , Kil-soo Jung
发明人： Kwang-min Kim , Jung-ho Lee , Kil-soo Jung
IPC分类号： G06F17/00 , G11B27/11 , H04N5/85 , H04N9/804 , H04N9/82 , H04N11/02
CPC分类号： H04N9/8042 , G11B27/11 , G11B2220/2562 , H04N5/85 , H04N9/8205
摘要： A storage medium storing application data providing a programming function, and an apparatus and method of reproducing the application data recorded on the storage medium and application data downloaded through a network. The apparatus includes: a reader reading data recorded on the storage medium; a local storage storing data downloaded from an external database via a network; and a reproducer reproducing the data read from the storage medium and the downloaded data stored in the local storage, wherein the reproducer includes an application manager to control the read data and the downloaded data to be reproduced together. It is possible to provide interactive functions with users, easily update and add application data when the application includes errors and malfunction which are not available when a storage medium is manufactured, or when it is necessary to update the application in order to provide additional functions which are not available when the storage medium is manufactured.
摘要翻译：存储提供编程功能的应用数据的存储介质，以及再现记录在存储介质上的应用数据和通过网络下载的应用数据的装置和方法。该装置包括：读取器，读取记录在存储介质上的数据; 存储经由网络从外部数据库下载的数据的本地存储器; 以及再现器，其再现从存储介质读取的数据和存储在本地存储器中的下载数据，其中，再现器包括一个应用程序管理器，用于控制读取的数据和下载的要再现的数据。当应用程序包含在制造存储介质时不可用的错误和故障，或者当需要更新应用程序以提供附加功能时，可以向用户提供与用户的交互功能，容易地更新和添加应用数据在制造存储介质时不可用。

78. 发明申请

US20050117883A1 Storage medium storing program management information, and reproducing method and apparatus 有权
标题翻译：存储程序管理信息的存储介质，再现方法和装置
公开(公告)号：US20050117883A1
公开(公告)日：2005-06-02
申请号：US10974030
申请日：2004-10-27
申请人： Kwang-min Kim , Jung-ho Lee , Kil-soo Jung , Sung-wook Park , Man-seok Kang , Hyun-kwon Chung
发明人： Kwang-min Kim , Jung-ho Lee , Kil-soo Jung , Sung-wook Park , Man-seok Kang , Hyun-kwon Chung
IPC分类号： G06F3/06 , G11B27/10 , H04N5/781
CPC分类号： G11B27/105 , A63F2300/202 , H04N21/433 , H04N21/4781 , H04N21/4788
摘要： A storage medium storing program applications to provide additional functions using moving-images and management information needed to manage the program applications. The storage medium includes reproduction mode data reproducing moving-image data, program data including a plurality of program applications providing additional functions using the moving-image data, system data controlling the execution of the reproduction mode data and the program data, and management information managing the execution of the program applications in unit of title. The program applications providing additional functions can be managed in unit of title and loaded to a system memory in advance to be executed.
摘要翻译：存储程序应用程序以使用运动图像和管理程序所需的管理信息提供附加功能。存储介质包括再现模式数据再现运动图像数据，包括使用运动图像数据提供附加功能的多个程序应用的程序数据，控制再现模式数据和程序数据的执行的系统数据以及管理信息管理以标题为单位执行程序应用程序。提供附加功能的程序应用程序可以以标题为单位进行管理，并预先加载到系统内存中以执行。

79. 发明授权

US06707062B2 Transistor in a semiconductor device with an elevated channel and a source drain 失效
标题翻译：具有升高通道和源极漏极的半导体器件中的晶体管
公开(公告)号：US06707062B2
公开(公告)日：2004-03-16
申请号：US10044965
申请日：2002-01-15
申请人： Jung Ho Lee
发明人： Jung Ho Lee
IPC分类号： H01L2906
CPC分类号： H01L29/66651 , H01L29/1054 , H01L29/665 , H01L29/66545 , H01L29/66636
摘要： The present invention relates to a transistor in a semiconductor device and method of manufacturing the same, more particularly to a new dual gate P+ salicide forming technology having an elevated channel and a source/drain using the selective SiGe epi-silicon growth technology. It relates to manufacturing of a high performance surface channel PMOS salicide that has a number of beneficial effects.
摘要翻译：本发明涉及一种半导体器件中的晶体管及其制造方法，更具体地涉及一种具有升高沟道和使用选择性SiGe表硅生长技术的源极/漏极的新型双栅P ++自对准硅化物形成技术。它涉及具有许多有益效果的高性能表面通道PMOS硅化物的制造。

80. 发明授权

US06627488B2 Method for fabricating a semiconductor device using a damascene process 失效
公开(公告)号：US06627488B2
公开(公告)日：2003-09-30
申请号：US09891210
申请日：2001-06-26
申请人： Jung Ho Lee
发明人： Jung Ho Lee
IPC分类号： H01L21338
CPC分类号： H01L29/66477 , H01L21/31053 , H01L29/105 , H01L29/1054 , H01L29/66537 , H01L29/66545 , H01L29/66621
摘要： Disclosed herein is a method of fabricating a semiconductor device using a damascene process. The method comprises the steps of: forming a dummy gate electrode on a semiconductor substrate; forming a source/drain region in the substrate; polishing and planarizing an interlayer insulating film formed on the substrate to expose the dummy gate electrode; etching the dummy gate electrode to form a groove in an exposed portion of the substrate; implanting impurity ions into the exposed portion of the substrate to form a delta-doping layer; thermally treating the semiconductor substrate to activate the implanted impurity ions; growing a silicon film on the exposed portion of the substrate by a selective epitaxial process; depositing a gate insulating film on the surface of the groove; and depositing a gate metal film on the gate insulating film in the groove, forming the gate electrode.

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