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71. 发明授权

US08138467B2 Color filter array including color filters only of first type and second type, method of fabricating the same, and image pickup device including the same 有权
标题翻译：仅包括第一类型和第二类型的滤色器的滤色器阵列，及其制造方法，以及包括该滤色器阵列的图像拾取装置
公开(公告)号：US08138467B2
公开(公告)日：2012-03-20
申请号：US12457910
申请日：2009-06-25
申请人： Bum Suk Kim , Jung Chak Ahn
发明人： Bum Suk Kim , Jung Chak Ahn
IPC分类号： G01J3/50
CPC分类号： G02B5/201
摘要： An image pickup device includes a pixel array including a plurality of photo sensitive devices and a color filter array including a plurality of color filters each disposed above a corresponding one of the plurality of photo sensitive devices. The color filters include a first type color filter formed on a glass substrate to filter light to pass a first spectrum and a second type color filter stacked on at least part of the first type color filter to filter light to pass a second spectrum. Accordingly, fabrication of a color filter array can be simplified and a color filter array having a small lay out can be fabricated.
摘要翻译：图像拾取装置包括包括多个光敏器件的像素阵列和包括多个滤色器的滤色器阵列，每个滤色器阵列设置在所述多个感光器件中相应的一个上方。滤色器包括形成在玻璃基板上以滤光以通过第一光谱的第一类型滤色器和堆叠在第一类型滤色器的至少一部分上的第二类型滤色器以过滤光以通过第二光谱。因此，可以简化滤色器阵列的制造，并且可以制造具有小布局的滤色器阵列。

72. 发明申请

US20120009720A1 BACKSIDE ILLUMINATED IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：背面照明图像传感器及其制造方法
公开(公告)号：US20120009720A1
公开(公告)日：2012-01-12
申请号：US13177253
申请日：2011-07-06
申请人： Eun-Sub SHIM , Jung-Chak Ahn , Bum-Suk Kim , Kyung-Ho Lee
发明人： Eun-Sub SHIM , Jung-Chak Ahn , Bum-Suk Kim , Kyung-Ho Lee
IPC分类号： H01L31/0232
CPC分类号： H01L27/1464 , H01L27/14625 , H01L27/14685 , H01L27/14687
摘要： A method of manufacturing a backside illuminated image sensor, including forming a first isolation layer in a first semiconductor layer, such that the first isolation layer defines pixels of a pixel array in the first semiconductor layer, forming a second semiconductor layer on a first surface of the first semiconductor layer, forming a second isolation layer in the second semiconductor layer, such that the second isolation layer defines active device regions in the second semiconductor layer, forming photo detectors and circuit devices by implanting impurities into a first surface of the second semiconductor layer, the first surface of the second semiconductor layer facing away from the first semiconductor layer, forming a wiring layer on the first surface of the second semiconductor layer, and forming a light filter layer on a second surface of the first semiconductor layer.
摘要翻译：一种制造背面照射图像传感器的方法，包括在第一半导体层中形成第一隔离层，使得第一隔离层限定第一半导体层中的像素阵列的像素，在第一半导体层的第一表面上形成第二半导体层所述第一半导体层在所述第二半导体层中形成第二隔离层，使得所述第二隔离层限定所述第二半导体层中的有源器件区域，通过将杂质注入到所述第二半导体层的第一表面中来形成光检测器和电路器件所述第二半导体层的第一表面背离所述第一半导体层，在所述第二半导体层的所述第一表面上形成布线层，并且在所述第一半导体层的第二表面上形成滤光器层。

73. 发明授权

US08023011B2 Circuit and method of detecting saturation level of image sensor and image sensor including saturation level detecting circuit 有权
标题翻译：包括饱和电平检测电路的图像传感器和图像传感器的饱和电平检测电路及方法
公开(公告)号：US08023011B2
公开(公告)日：2011-09-20
申请号：US12649895
申请日：2009-12-30
申请人： Jung-chak Ahn
发明人： Jung-chak Ahn
IPC分类号： H04N9/64 , H04N3/14 , H04N5/335
CPC分类号： H04N5/374 , H01L27/14609 , H04N5/355 , H04N5/3559 , H04N5/361 , H04N5/378
摘要： A circuit and method of detecting a saturation level of an image sensor including a photodiode using a black pixel circuit included in the image sensor. The saturation level detecting circuit includes a pixel unit, a reset node and a detection controller. The pixel unit includes a floating diffusion node connected to, or disconnected from, the photodiode and outputs a voltage signal corresponding to the voltage of the floating diffusion node. The reset node is connected to, or disconnected from, the floating diffusion node. The detection controller transfers a power voltage or a reference voltage to the reset node.
摘要翻译：一种使用包括在图像传感器中的黑色像素电路来检测包括光电二极管的图像传感器的饱和度水平的电路和方法。饱和电平检测电路包括像素单元，复位节点和检测控制器。像素单元包括连接到光电二极管或从光电二极管断开的浮动扩散节点，并输出与浮动扩散节点的电压对应的电压信号。复位节点与浮动扩散节点连接或断开。检测控制器将电源电压或参考电压传送到复位节点。

74. 发明授权

US07990437B2 Color correction in CMOS image sensor 有权
标题翻译： CMOS图像传感器中的色彩校正
公开(公告)号：US07990437B2
公开(公告)日：2011-08-02
申请号：US11811630
申请日：2007-06-11
申请人： Bum-Suk Kim , Alexander Getman , Jong-Jin Lee , Yun-Ho Jang , Jung-Chak Ahn
发明人： Bum-Suk Kim , Alexander Getman , Jong-Jin Lee , Yun-Ho Jang , Jung-Chak Ahn
IPC分类号： H04N5/262 , H04N9/73
CPC分类号： H04N9/045 , H04N2209/046
摘要： For color correction in an image sensor, an image sensor processing block generates a plurality of color correction parameters corresponding to a plurality of selected pixels of the image sensor for defining a plurality of areas of a sample image. In addition, a color correction value calculation block generates a respective color correction value corresponding to a given pixel from bilinear interpolation of a respective subset of the color correction parameters corresponding to a respective one of the areas including a respective location of the given pixel.
摘要翻译：对于图像传感器中的颜色校正，图像传感器处理块生成对应于图像传感器的多个选择像素的多个颜色校正参数，用于定义样本图像的多个区域。此外，颜色校正值计算块根据对应于包括给定像素的相应位置的各个区域的颜色校正参数的相应子集的双线性插值，从给定像素生成对应于给定像素的相应颜色校正值。

75. 发明申请

US20110156105A1 PHOTOSENSORS INCLUDING PHOTODIODE CONTROL ELECTRODES AND METHODS OF OPERATING SAME 有权
标题翻译：包括光电子控制电极的光电传感器及其操作方法
公开(公告)号：US20110156105A1
公开(公告)日：2011-06-30
申请号：US13041973
申请日：2011-03-07
申请人： Yi-tae Kim , Jung-chak Ahn
发明人： Yi-tae Kim , Jung-chak Ahn
IPC分类号： H01L31/113
CPC分类号： H01L31/103 , H04N5/3597 , H04N5/361 , H04N5/3745
摘要： A sensor includes a substrate, a floating diffusion node in the substrate, a photodiode in the substrate laterally spaced apart from the floating diffusion region and a transfer transistor coupling the photodiode and the floating diffusion region. The sensor further includes a photodiode control electrode disposed on the photodiode and configured to control a carrier distribution of the photodiode responsive to a control signal applied thereto. The floating diffusion region may have a first conductivity type, the photodiode may include a first semiconductor region of a second conductivity type disposed on a second semiconductor region of the first conductivity type, and the photodiode control electrode may be disposed on the first semiconductor region. The photodiode may be configured to receive incident light from a side of the substrate opposite the photodiode control electrode. The transfer transistor may include a gate electrode on a channel region in the substrate and the photodiode control electrode and the transfer transistor gate electrode may be separately controllable. In further embodiments, the photodiode control electrode comprises an extension of the transfer transistor gate electrode.
摘要翻译：传感器包括衬底，衬底中的浮动扩散节点，与浮动扩散区域横向间隔开的衬底中的光电二极管和耦合光电二极管和浮动扩散区域的传输晶体管。传感器还包括设置在光电二极管上的光电二极管控制电极，其被配置成响应于施加到其上的控制信号来控制光电二极管的载流子分布。浮置扩散区域可以具有第一导电类型，光电二极管可以包括设置在第一导电类型的第二半导体区域上的第二导电类型的第一半导体区域，并且光电二极管控制电极可以设置在第一半导体区域上。光电二极管可以被配置为从基板的与光电二极管控制电极相对的一侧接收入射光。转移晶体管可以包括在衬底中的沟道区上的栅极电极，并且光电二极管控制电极和转移晶体管栅极电极可以是单独可控的。在另外的实施例中，光电二极管控制电极包括传输晶体管栅电极的延伸部分。

76. 发明授权

US07910872B2 Photosensors including photodiode control electrodes and methods of operating same 有权
标题翻译：光电传感器包括光电二极管控制电极和操作方法
公开(公告)号：US07910872B2
公开(公告)日：2011-03-22
申请号：US12132814
申请日：2008-06-04
申请人： Yi-tae Kim , Jung-chak Ahn
发明人： Yi-tae Kim , Jung-chak Ahn
IPC分类号： H01L27/00
CPC分类号： H01L31/103 , H04N5/3597 , H04N5/361 , H04N5/3745
摘要： A sensor includes a substrate, a floating diffusion node in the substrate, a photodiode in the substrate laterally spaced apart from the floating diffusion region and a transfer transistor coupling the photodiode and the floating diffusion region. The sensor further includes a photodiode control electrode disposed on the photodiode and configured to control a carrier distribution of the photodiode responsive to a control signal applied thereto. The photodiode may include a first semiconductor region of a first conductivity type disposed on a second semiconductor region of a second conductivity type, the floating diffusion region may have the second conductivity type and the photodiode control electrode may be disposed on the first semiconductor region. The photodiode may be configured to receive incident light from a side of the substrate opposite the photodiode control electrode. The transfer transistor may include a gate electrode on a channel region in the substrate and the photodiode control electrode and the transfer transistor gate electrode may be separately controllable. In further embodiments, the photodiode control electrode comprises an extension of the transfer transistor gate electrode.
摘要翻译：传感器包括衬底，衬底中的浮动扩散节点，与浮动扩散区域横向间隔开的衬底中的光电二极管和耦合光电二极管和浮动扩散区域的传输晶体管。传感器还包括设置在光电二极管上的光电二极管控制电极，其被配置为响应于施加到其上的控制信号来控制光电二极管的载流子分布。光电二极管可以包括设置在第二导电类型的第二半导体区域上的第一导电类型的第一半导体区域，浮动扩散区域可以具有第二导电类型，并且光电二极管控制电极可以设置在第一半导体区域上。光电二极管可以被配置为从基板的与光电二极管控制电极相对的一侧接收入射光。转移晶体管可以包括在衬底中的沟道区上的栅电极，并且光电二极管控制电极和转移晶体管栅电极可以是单独可控的。在另外的实施例中，光电二极管控制电极包括传输晶体管栅电极的延伸部分。

77. 发明申请

US20110036969A1 Unit pixels including boosting capacitors, pixel arrays including the unit pixels and photodetecting devices including the pixel arrays 有权
标题翻译：单位像素包括升压电容器，包括单位像素的像素阵列和包括像素阵列的光检测装置
公开(公告)号：US20110036969A1
公开(公告)日：2011-02-17
申请号：US12801196
申请日：2010-05-27
申请人： Jung-chak Ahn , Kyung-ho Lee , Shay Hamami , Young-hwan Park
发明人： Jung-chak Ahn , Kyung-ho Lee , Shay Hamami , Young-hwan Park
IPC分类号： H01L27/146 , H01L31/09
CPC分类号： H01L27/14609 , H04N5/3597 , H04N5/363 , H04N5/37452
摘要： A unit pixel capable of achieving full initialization of a floating diffusion area, a pixel array including the unit pixel, and a photodetecting device including the pixel array. The unit pixel includes a photodetector, a transmission transistor for transmitting charges generated from the photodetector to a floating diffusion area, a reset transistor for initializing the floating diffusion area, and a boosting capacitor having a first terminal connected to the floating diffusion area and a second terminal to which a boosting voltage is applied.
摘要翻译：能够实现浮动扩散区域的完全初始化的单位像素，包括单位像素的像素阵列，以及包括该像素阵列的受光器件。单位像素包括光电检测器，用于将从光电检测器产生的电荷传输到浮动扩散区域的传输晶体管，用于初始化浮动扩散区域的复位晶体管，以及具有连接到浮动扩散区域的第一端子的升压电容器，端子，施加升压电压。

78. 发明申请

US20100141821A1 Image Sensor Devices Having Dual-Gated Charge Storage Regions Therein 有权
标题翻译：具有双门控充电存储区域的图像传感器设备
公开(公告)号：US20100141821A1
公开(公告)日：2010-06-10
申请号：US12632989
申请日：2009-12-08
申请人： Eric R. Fossum , Young Gu Jin , Soo Jung Hwang , Dae Kil Cha , Yoon Dong Park , Jung Chak Ahn , Kyoung Sik Moon
发明人： Eric R. Fossum , Young Gu Jin , Soo Jung Hwang , Dae Kil Cha , Yoon Dong Park , Jung Chak Ahn , Kyoung Sik Moon
IPC分类号： H04N5/335 , H01L31/14
CPC分类号： H01L27/14812 , H01L27/14609 , H01L27/14641 , H01L27/14643 , H04N5/37452
摘要： An image sensor device may include a dual-gated charge storage region within a substrate. The dual-gated charge storage region includes first and second diodes within a common charge generating region. This charge generating region is configured to receive light incident on a surface of the image sensor device. The first and second diodes include respective first conductivity type regions responsive to first and second gate signals, respectively. These first and second gate signals are active during non-overlapping time intervals.
摘要翻译：图像传感器装置可以包括衬底内的双门控电荷存储区域。双门控电荷存储区域包括公共电荷产生区域内的第一和第二二极管。该电荷产生区被配置为接收入射在图像传感器装置的表面上的光。第一和第二二极管分别包括响应于第一和第二栅极信号的相应的第一导电类型区域。这些第一和第二门信号在非重叠时间间隔期间是有效的。

79. 发明申请

US20100097490A1 PIXEL HAVING TWO SEMICONDUCTOR LAYERS, IMAGE SENSOR INCLUDING THE PIXEL, AND IMAGE PROCESSING SYSTEM INCLUDING THE IMAGE SENSOR 有权
标题翻译：具有两个半导体层的像素，包括像素的图像传感器和包括图像传感器的图像处理系统
公开(公告)号：US20100097490A1
公开(公告)日：2010-04-22
申请号：US12684163
申请日：2010-01-08
申请人： Jung-Chak Ahn
发明人： Jung-Chak Ahn
IPC分类号： H04N5/228 , H01L31/14
CPC分类号： H01L27/14643 , H01L27/14612 , H01L27/14634 , H01L27/14636 , H01L27/1464
摘要： An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors for detecting, resetting, amplifying and transmitting signals charges received from the photoelectric elements. The top and bottom patterned semiconductor layers may be separated from each other by an interlayer insulating layer that may include metal interconnections for conducting signals between devices formed in the patterned semiconductor layers and from external devices.
摘要翻译：具有包括两个图案化半导体层的像素的图像传感器。顶部图案化的半导体层包含具有基本上100％填充因子的像素的光电元件。底部图案化的半导体层包含用于检测，复位，放大和传输从光电元件接收的电荷的晶体管。顶部和底部图案化的半导体层可以通过层间绝缘层彼此分离，层间绝缘层可以包括用于在形成在图案化的半导体层中的器件与外部器件之间传导信号的金属互连。

80. 发明申请

US20100006968A1 Image sensors and methods of manufacturing the same 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20100006968A1
公开(公告)日：2010-01-14
申请号：US12458011
申请日：2009-06-29
申请人： Kyung-ho Lee , Jung-chak Ahn , Yi-tae Kim , Wook Lee , Bum-suk Kim , Tae-sub Jung
发明人： Kyung-ho Lee , Jung-chak Ahn , Yi-tae Kim , Wook Lee , Bum-suk Kim , Tae-sub Jung
IPC分类号： H01L31/0232 , H01L31/0224
CPC分类号： H01L27/14603 , H01L27/14627 , H01L27/14683
摘要： Provided are image sensors and a methods of manufacturing image sensors. The image sensors may include a substrate, a pixel array region, and a peripheral circuit region. The substrate includes a first region and a second region. The pixel array region may be formed on the first region. The peripheral circuit region may be formed on the second region. The first region may be located higher than the second region. According to the image sensor and the method of manufacturing the same, the vertical height of the pixel array region is decreased as compared to the prior art, and thus the aspect ratio at the pixel array region is minimized. As a result, condensing efficiency the image sensor may be improved.
摘要翻译：提供图像传感器和制造图像传感器的方法。图像传感器可以包括基板，像素阵列区域和外围电路区域。衬底包括第一区域和第二区域。像素阵列区域可以形成在第一区域上。外围电路区域可以形成在第二区域上。第一区域可以位于比第二区域更高的位置。根据图像传感器及其制造方法，与现有技术相比，像素阵列区域的垂直高度减小，因此像素阵列区域的纵横比最小化。结果，可以提高图像传感器的冷凝效率。

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