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    • 71. 发明授权
    • Display device and method of manufacturing the same
    • 显示装置及其制造方法
    • US08045112B2
    • 2011-10-25
    • US12147720
    • 2008-06-27
    • Jun-woo LeeHwa-sung WooBaek-kyun JeonJi-won SohnIn-suk LeeKyoung-tae Kim
    • Jun-woo LeeHwa-sung WooBaek-kyun JeonJi-won SohnIn-suk LeeKyoung-tae Kim
    • G02F1/1333
    • G02F1/133707G02F2001/133742G02F2001/134345
    • A display device includes: a first panel having a pixel region including a pixel electrode therein; a second panel having a common electrode facing the first panel; a liquid crystal layer having vertically aligned liquid crystal molecules interposed between the first and second panels; a first alignment layer disposed on the pixel electrode; and a second alignment layer disposed on the common electrode. At least one of the pixel electrode and the common electrode has a micro slit pattern. At least one of the first and second alignment layers divides the pixel region into domains, is formed to have pretilt directions corresponding to a given domain, and pretilts the vertically aligned liquid crystal molecules in the given domain. A direction of summed horizontal components of a fringe field at an edge of the pixel region is substantially equal to a direction of summed horizontal components of a pretilt direction of the at least one of the first and second alignment layer.
    • 一种显示装置,包括:第一面板,具有包括像素电极的像素区域; 具有面向所述第一面板的公共电极的第二面板; 具有插入在第一和第二面板之间的垂直排列的液晶分子的液晶层; 设置在像素电极上的第一取向层; 以及设置在公共电极上的第二取向层。 像素电极和公共电极中的至少一个具有微狭缝图案。 第一和第二对准层中的至少一个将像素区域划分成区域,形成为具有对应于给定域的预倾斜方向,并且预倾斜给定域中的垂直取向的液晶分子。 像素区域的边缘处的边缘场的相加的水平分量的方向基本上等于第一和第二取向层中的至少一个的预倾斜方向的相加的水平分量的方向。
    • 73. 发明申请
    • SEMICONDUCTOR MEMORY APPARATUS
    • 半导体存储器
    • US20100157643A1
    • 2010-06-24
    • US12495026
    • 2009-06-30
    • Jun Woo Lee
    • Jun Woo Lee
    • G11C5/02G11C7/00
    • G11C7/1048
    • A semiconductor memory apparatus includes non-inversion repeaters that non-invert data and output the inverted data; and inversion repeaters that invert data and output the inverted data. The non-inversion repeaters or the inversion repeaters are arranged on a first data line and a second data line at a predetermined distance, respectively, which are parallel with each other and the most adjacent to each other and the non-inversion repeater or the inversion repeater is arranged at first positions corresponding to the first data line and the second data line, respectively. The non-inversion repeaters are arranged on one of the first data line and the second data line while the inversion repeaters are arranged on the other first data line and the second data line, at second positions except for the first arrangement positions of positions corresponding to the first data line and the second data line, respectively.
    • 半导体存储装置包括不反转数据并输出反相数据的非反转中继器; 反转中继器,反转数据并输出反相数据。 非反转中继器或反转中继器分别布置在彼此平行并且彼此最相邻且非相邻中继器或反演的预定距离的第一数据线和第二数据线上 中继器分别布置在与第一数据线和第二数据线对应的第一位置处。 非反转中继器被布置在第一数据线和第二数据线中的一个上,而反转中继器被布置在另一第一数据线和第二数据线上的第二位置处,除了对应于 第一数据线和第二数据线。