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    • 72. 发明申请
    • METHOD OF MANUFACTURING AN ARRAY SUBSTRATE FOR LCD DEVICE HAVING DOUBLE-LAYERED METAL STRUCTURE
    • 具有双层金属结构的液晶显示装置制造阵列基板的方法
    • US20110212557A1
    • 2011-09-01
    • US13100883
    • 2011-05-04
    • Won-Ho CHOGyoo-Chul JoGue-Tai LeeJin-Gyu KangBeung-Hwa JeongJin-Young Kim
    • Won-Ho CHOGyoo-Chul JoGue-Tai LeeJin-Gyu KangBeung-Hwa JeongJin-Young Kim
    • H01L33/62
    • G02F1/136286G02F2001/13629G02F2001/136295
    • The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad on a substrate, wherein the gate electrode, the gate line and the gate pad have a double-layered structure consisting of a first metal layer and a first barrier metal layer in series from the substrate, and wherein the first metal is one of aluminum and aluminum alloy; a gate insulation layer on the substrate covering the gate electrode, gate line and gate pad; an active layer and an ohmic contact layer sequentially formed on the gate insulation layer and over the gate electrode; a data line on the gate insulation layer perpendicularly crossing the gate line, source and drain electrodes contacting the ohmic contact layer, and a data pad on the gate insulation layer, wherein the data line, the source and drain electrode and the data pad have a double-layered structure consisting of a second barrier metal layer and a second metal layer of copper; a passivation layer formed on the gate insulation layer to cover the data line, source and drain electrodes, and data pad, wherein the passivation layer has a drain contact hole exposing a portion of the drain electrode, a gate pad contact hole exposing a portion of the gate pad, and a data pad contact hole exposing a portion of the data pad; and a pixel electrode, a gate pad terminal and a data pad terminal on the passivation layer, all of which are formed of a transparent conductive material on the passivation layer.
    • 本发明是一种用于液晶显示装置的阵列基板,其包括在基板上的栅电极,栅极线和栅极焊盘,其中栅电极,栅极线和栅极焊盘具有双层 结构由第一金属层和与基板串联的第一阻挡金属层组成,其中第一金属是铝和铝合金之一; 覆盖栅电极,栅极线和栅极焊盘的基板上的栅极绝缘层; 依次形成在栅极绝缘层上和栅电极上的有源层和欧姆接触层; 垂直于栅极线的栅极绝缘层上的数据线,与欧姆接触层接触的源极和漏极以及栅极绝缘层上的数据焊盘,其中数据线,源极和漏极以及数据焊盘具有 由第二阻挡金属层和铜的第二金属层组成的双层结构; 形成在所述栅极绝缘层上以覆盖所述数据线,源极和漏极以及数据焊盘的钝化层,其中所述钝化层具有暴露所述漏电极的一部分的漏极接触孔, 栅极焊盘和暴露数据焊盘的一部分的数据焊盘接触孔; 以及钝化层上的像素电极,栅极焊盘端子和数据焊盘端子,所有这些都由钝化层上的透明导电材料形成。
    • 75. 发明授权
    • Organometallic composition for forming a metal alloy pattern and a method of forming such a pattern using the composition
    • 用于形成金属合金图案的有机金属组合物和使用该组合物形成这种图案的方法
    • US07883838B2
    • 2011-02-08
    • US10718809
    • 2003-11-24
    • Jin Young KimSoon Taik HwangYoung Hun ByunEuk Che HwangSang Yoon Lee
    • Jin Young KimSoon Taik HwangYoung Hun ByunEuk Che HwangSang Yoon Lee
    • B01J31/12C08F4/42
    • G03F7/0043G03F7/0042
    • An organometallic composition containing an organometallic compound (I) containing Ag, an organometallic compound (II) containing Au, Pd, or Ru, and an organometallic compound (III) containing Ti, Ta, Cr, Mo, Ru, Ni, Pd, Cu, Au, or Al, wherein the metal components of organometallic compounds (II) and (III), respectively, are present in an amount of 0.01˜10 mol % based on the amount of Ag in the organometallic compound (I), and a method of forming a metal alloy pattern using the same. Silver alloy patterns can be obtained through a simplified manufacturing process, which patterns have enhanced heat resistance, adhesiveness and chemical stability. The method may be applied to making a reflective film for LCD and metal wiring (gate, source, drain electrode) for flexible displays or flat panel displays, and further to CMP-free damascene processing and PR-free ITO film deposition.
    • 含有含Ag的有机金属化合物(I),含有Au,Pd或Ru的有机金属化合物(II)和含有Ti,Ta,Cr,Mo,Ru,Ni,Pd,Cu的有机金属化合物(III)的有机金属组合物 ,Au或Al,其中有机金属化合物(II)和(III)的金属组分分别以有机金属化合物(I)中的Ag的量为0.01〜10摩尔%,和 使用其形成金属合金图案的方法。 可以通过简化的制造工艺获得银合金图案,该图案具有增强的耐热性,粘合性和化学稳定性。 该方法可以应用于制造用于LCD和用于柔性显示器或平板显示器的LCD和金属布线(栅极,源极,漏极)的反射膜,并且还可用于制造无CMP的镶嵌加工和无PR的ITO膜沉积。
    • 78. 发明授权
    • Semiconductor memory device having a word line strap structure and associated configuration method
    • 具有字线带结构和相关配置方法的半导体存储器件
    • US07675807B2
    • 2010-03-09
    • US11764381
    • 2007-06-18
    • Jin-Young Kim
    • Jin-Young Kim
    • G11C8/00
    • G11C11/4094G11C5/025G11C7/12G11C8/14
    • A semiconductor memory device having a memory cell array with sub-memory cell arrays arranged in a bit line direction and a word line direction which is perpendicular to the bit line direction. The memory cell arrays including a plurality of memory cells. The memory device further including sense amplifying portions arranged between the sub-memory cell arrays in the bit line direction, contact and conjunction portions arranged between the sub-memory cell arrays in the word line direction and conjunction portions arranged between the sense amplifiers in the word line direction. A main word line overlaps a word line between the sub-memory cell arrays arranged in the word line direction.
    • 一种具有存储单元阵列的半导体存储器件,具有以位线方向排列的子存储单元阵列和垂直于位线方向的字线方向。 存储单元阵列包括多个存储单元。 所述存储装置还包括布置在位线方向上的子存储单元阵列之间的读出放大部分,在字线方向上布置在子存储单元阵列之间的接触部分和结合部分以及布置在字中的读出放大器之间的结合部分 线方向。 主字线与布置在字线方向上的子存储单元阵列之间的字线重叠。
    • 79. 发明授权
    • Capacitor-less DRAM circuit and method of operating the same
    • 无电容DRAM电路及其操作方法
    • US07675771B2
    • 2010-03-09
    • US11882932
    • 2007-08-07
    • Duk-Ha ParkKi-Whan SongJin-Young Kim
    • Duk-Ha ParkKi-Whan SongJin-Young Kim
    • G11C11/34
    • G11C11/404G11C7/1048G11C7/12G11C7/14G11C11/4074G11C11/4087G11C11/4094G11C11/4099G11C2207/002
    • One embodiment includes a plurality of word lines, a plurality of source lines, a plurality of bit lines intersecting with the plurality of word lines, and a plurality of memory cells formed at intersections of the plurality of word lines and the plurality of bit lines. Each of the plurality of memory cells is a floating body cell. A gate of each floating body cell is connected to one of the word lines, a drain of each floating body cell is connected to one of the bit lines, and a source of each floating body cell is connected to one of the source lines. At least one bit line and source line selecting circuit is configured to selectively connect each of the plurality of bit lines to a first output bit line and to selectively connect the source lines to a source voltage. At least one sense amplifier is configured to sense data based on a voltage on the first output bit line.
    • 一个实施例包括多个字线,多个源极线,与多个字线相交的多个位线,以及形成在多条字线和多条位线的交点处的多个存储单元。 多个存储单元中的每一个都是浮体单元。 每个浮体单元的栅极连接到一个字线,每个浮体单元的漏极连接到一个位线,并且每个浮体单元的源极连接到源极线之一。 至少一个位线和源极线选择电路被配置为选择性地将多个位线中的每一个连接到第一输出位线并且选择性地将源极线连接到源极电压。 至少一个读出放大器被配置为基于第一输出位线上的电压来感测数据。
    • 80. 发明授权
    • Array substrate for LCD device having double-layered metal structure and manufacturing method thereof
    • 具有双层金属结构的液晶显示装置用阵列基板及其制造方法
    • US07605877B2
    • 2009-10-20
    • US10875559
    • 2004-06-25
    • Won-Ho ChoGyoo-Chul JoGue-Tai LeeJin-Gyu KangBeung-Hwa JeongJin-Young Kim
    • Won-Ho ChoGyoo-Chul JoGue-Tai LeeJin-Gyu KangBeung-Hwa JeongJin-Young Kim
    • G02F1/136
    • G02F1/136286G02F2001/13629G02F2001/136295
    • The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad on a substrate, wherein the gate electrode, the gate line and the gate pad have a double-layered structure consisting of a first metal layer and a first barrier metal layer in series from the substrate, and wherein the first metal is one of aluminum and aluminum alloy; a gate insulation layer on the substrate covering the gate electrode, gate line and gate pad; an active layer and an ohmic contact layer sequentially formed on the gate insulation layer and over the gate electrode; a data line on the gate insulation layer perpendicularly crossing the gate line, source and drain electrodes contacting the ohmic contact layer, and a data pad on the gate insulation layer, wherein the data line, the source and drain electrode and the data pad have a double-layered structure consisting of a second barrier metal layer and a second metal layer of copper; a passivation layer formed on the gate insulation layer to cover the data line, source and drain electrodes, and data pad, wherein the passivation layer has a drain contact hole exposing a portion of the drain electrode, a gate pad contact hole exposing a portion of the gate pad, and a data pad contact hole exposing a portion of the data pad; and a pixel electrode, a gate pad terminal and a data pad terminal on the passivation layer, all of which are formed of a transparent conductive material on the passivation layer.
    • 本发明是一种用于液晶显示装置的阵列基板,其包括在基板上的栅电极,栅极线和栅极焊盘,其中栅电极,栅极线和栅极焊盘具有双层 结构由第一金属层和与基板串联的第一阻挡金属层组成,其中第一金属是铝和铝合金之一; 覆盖栅电极,栅极线和栅极焊盘的基板上的栅极绝缘层; 依次形成在栅极绝缘层上和栅电极上的有源层和欧姆接触层; 垂直于栅极线的栅极绝缘层上的数据线,与欧姆接触层接触的源极和漏极以及栅极绝缘层上的数据焊盘,其中数据线,源极和漏极以及数据焊盘具有 由第二阻挡金属层和铜的第二金属层组成的双层结构; 形成在所述栅极绝缘层上以覆盖所述数据线,源极和漏极以及数据焊盘的钝化层,其中所述钝化层具有暴露所述漏电极的一部分的漏极接触孔, 栅极焊盘和暴露数据焊盘的一部分的数据焊盘接触孔; 以及钝化层上的像素电极,栅极焊盘端子和数据焊盘端子,所有这些都由钝化层上的透明导电材料形成。