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    • 71. 发明授权
    • Providing traffic information relating to a prediction of congestion status and using the same
    • 提供与拥塞状态的预测有关的交通信息并使用该交通信息
    • US07729335B2
    • 2010-06-01
    • US11419139
    • 2006-05-18
    • Joon Hwi LeeChu Hyun SeoYoung In KimMun Ho JungMoon Jeung JoeDong Hoon YiHyong Chol Choi
    • Joon Hwi LeeChu Hyun SeoYoung In KimMun Ho JungMoon Jeung JoeDong Hoon YiHyong Chol Choi
    • H04L3/24H04M11/04H04W24/00G06F19/00G01C21/00G11C21/30
    • H04L47/10H04L43/067H04L43/0858H04L47/11
    • A method for identifying traffic information includes receiving traffic data including a first identifier, information corresponding to a prediction of an amount of congestion for a particular link, and information corresponding to a location associated with the particular link. The first identifier enables a determination of a type of the information that is included within the received traffic data. The method also includes determining a type of information included within the received traffic data based on the first identifier and determining congestion amount prediction information based on the information included in the received traffic data only if the first identifier enables a determination that the received traffic data includes a prediction related to congestion amount. The method further includes determining location information based on the information that is included in the received traffic data corresponding to the location associated with the particular link identifying traffic information based on the determined congestion amount prediction information and the determined location information.
    • 用于识别交通信息的方法包括接收包括第一标识符的业务数据,对应于特定链路的拥塞量的预测信息,以及与特定链路相关联的位置的信息。 第一标识符能够确定包括在所接收的业务数据内的信息的类型。 该方法还包括基于第一标识符确定所接收的业务数据中包括的信息的类型,并且仅当第一标识符能够确定接收到的业务数据包括在内时,基于包括在所接收的业务数据中的信息来确定拥塞量预测信息 与拥塞量有关的预测。 该方法还包括基于所确定的拥塞量预测信息和所确定的位置信息,基于包含在与识别交通信息的特定链路相关联的位置的接收到的业务数据中的信息来确定位置信息。
    • 74. 发明授权
    • Method and apparatus of the variable points IFFT/FFT
    • 可变点IFFT / FFT的方法和装置
    • US07626923B2
    • 2009-12-01
    • US11681201
    • 2007-03-02
    • Hyun-Seo OhHyoung-Goo JeonHyun LeeWon-Chul Choi
    • Hyun-Seo OhHyoung-Goo JeonHyun LeeWon-Chul Choi
    • H04J11/00
    • G06F17/142H04L27/2628H04L27/265
    • Provided are a method and apparatus for performing a variable point Inverse Fast Fourier Transform (IFFT)/Fast Fourier Transform (FFT). The apparatus for performing a variable point IFFT includes: an IFFT interpolator generating interpolation data signals having a determined point and interpolating a plurality of interpolation data, the number of which depends on an IFFT operation mode signal into input data; an IFFT operator generating IFFT operation data signals by performing an IFFT operation for the interpolated data signals; an IFFT mode selector selecting and outputting some of the IFFT operation data signals in response to the IFFT operation mode signal so that the selected IFFT operation data have the same number of points as the input data; and a control unit outputting the IFFT operation. Therefore, it is possible to easily compute variably sized IFFT/FFT hardware.
    • 提供了一种用于执行可变点快速傅立叶逆变换(IFFT)/快速傅里叶变换(FFT)的方法和装置。 用于执行可变点IFFT的装置包括:IFFT内插器,产生具有确定点并插入多个内插数据的插值数据信号,其数量取决于IFFT操作模式信号为输入数据; IFFT操作者通过对内插的数据信号执行IFFT操作来产生IFFT操作数据信号; IFFT模式选择器响应于IFFT操作模式信号来选择和输出一些IFFT操作数据信号,使得所选择的IFFT操作数据具有与输入数据相同的点数; 以及输出IFFT操作的控制单元。 因此,可以容易地计算可变大小的IFFT / FFT硬件。
    • 77. 发明申请
    • Method of Fabricating Flash Memory Device
    • 制造闪存设备的方法
    • US20090029523A1
    • 2009-01-29
    • US12179448
    • 2008-07-24
    • Ji Hyun SeoSeok Pyo SongDong Sun Sheen
    • Ji Hyun SeoSeok Pyo SongDong Sun Sheen
    • H01L21/762
    • H01L21/3081H01L21/3086H01L21/31111H01L21/31116H01L21/76232H01L27/11521
    • The invention relates to a method of fabricating flash memory device. In accordance with an aspect of the invention, the method includes forming a gate insulating layer, a first conductive layer, and an isolation mask over a semiconductor substrate. The isolation mask is patterned to expose regions in which an isolation layer will be formed. The first conductive layer, the gate insulating layer, and the semiconductor substrate are etched using the patterned isolation mask to form trenches. A liner oxide layer is formed on the resulting structure including the trenches. The trenches in which the liner oxide layer is formed are filled with an insulating layer. A planarizing process and a cleaning process are carried out such that wing spacers covering the gate insulating layer are formed at top edge portions of the isolation layer, thereby forming the isolation layer.
    • 本发明涉及一种制造闪速存储器件的方法。 根据本发明的一个方面,所述方法包括在半导体衬底上形成栅绝缘层,第一导电层和隔离掩模。 隔离掩模被图案化以暴露其中将形成隔离层的区域。 使用图案化隔离掩模蚀刻第一导电层,栅极绝缘层和半导体衬底,以形成沟槽。 在包括沟槽的所得结构上形成衬里氧化物层。 形成衬垫氧化物层的沟槽填充有绝缘层。 执行平面化处理和清洁处理,使得覆盖栅绝缘层的翼间隔件形成在隔离层的顶部边缘部分,从而形成隔离层。
    • 78. 发明授权
    • Optical alignment method and apparatus
    • 光学对准方法和装置
    • US07443505B2
    • 2008-10-28
    • US11635578
    • 2006-12-08
    • Jong Jin LeeHyun Seo Kang
    • Jong Jin LeeHyun Seo Kang
    • G01B11/00G01B11/26G01N21/86G01V8/00G02B6/26G02B6/42
    • G02B6/4227G02B6/4204
    • In disclosed optical alignment method and apparatus thereof, external reflection entering laser diode by feedback from transmission line of low cost bidirectional optical transceiver module without optical isolator for subscribers is reduced so as to reduce RIN considering high optical coupling efficiency. The external reflection is minimized using property that output current increases in proportion to external reflection during optical alignment. For optimal optical alignment, external reflection and RIN are previously measured according to optical alignment position between subassembly and optical fiber. Optimal position is determined by both light output and RIN, and predetermined ratio of the mPD output current of minimum RIN position to that of maximum light output power position.
    • 在所公开的光学对准方法及其装置中,减少了由不具有用户用光隔离器的低成本双向光收发器模块的传输线反馈进入激光二极管的外部反射,以便考虑到高的光耦合效率来降低RIN。 使用在光学对准期间输出电流与外部反射成比例地增加的性质来最小化外部反射。 为了最佳的光学对准,预先根据子组件和光纤之间的光学对准位置来测量外部反射和RIN。 最佳位置由光输出和RIN两者确定,最小RIN位置的mPD输出电流与最大光输出功率位置的预定比例。