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71. 发明申请

US20080218675A1 Liquid crystal display panel having dielectric spacers 审中-公开
标题翻译：具有电介质间隔物的液晶显示面板
公开(公告)号：US20080218675A1
公开(公告)日：2008-09-11
申请号：US12074832
申请日：2008-03-05
申请人： Chao-Chih Lai , Tsau-Hua Hsieh
发明人： Chao-Chih Lai , Tsau-Hua Hsieh
IPC分类号： G02F1/1337
CPC分类号： G02F1/13394 , G02F2001/13396
摘要： An exemplary liquid crystal display panel (1) includes an upper substrate (111) and a lower substrate (121) parallel to each other, a liquid crystal layer (10) sandwiched between the upper and the lower substrates, and data lines (13) and driving lines (14) formed at the lower substrate. The data lines and the driving lines cross each other, thereby defining pixel regions. Each of the pixel regions includes a first spacer (17) and a second spacer (18). The first spacer is arranged between the upper substrate and the corresponding data line. The second spacer is arranged between the upper substrate and the corresponding driving line. A predetermined gap is defined between the first spacer and the data line.
摘要翻译：示例性液晶显示面板（1）包括彼此平行的上基板（111）和下基板（121），夹在上基板和下基板之间的液晶层（10）和数据线（13）以及形成在下基板处的驱动线（14）。数据线和驱动线彼此交叉，由此限定像素区域。每个像素区域包括第一间隔物（17）和第二间隔物（18）。第一间隔件布置在上基板和相应的数据线之间。第二间隔件布置在上基板和相应的驱动线之间。在第一间隔件和数据线之间限定预定间隙。

72. 发明授权

US07402693B2 Cyclobutanetetracarboxylate compound and preparation method thereof 有权
公开(公告)号：US07402693B2
公开(公告)日：2008-07-22
申请号：US11888703
申请日：2007-08-02
申请人： Ming-Chih Lai , Chia-Wen Chang , Chi-Wi Ong
发明人： Ming-Chih Lai , Chia-Wen Chang , Chi-Wi Ong
IPC分类号： C07C69/74
CPC分类号： C07C69/74 , C07C67/347 , C07C2601/04
摘要： The invention provides a cyclobutanetetracarboxylate compound of general formula (I) and a preparation method thereof: in which R and R1 are as defined in the specification.

73. 发明申请

US20080093360A1 STRUCTURE OF A FOLDED BOX 审中-公开
标题翻译：折叠盒的结构
公开(公告)号：US20080093360A1
公开(公告)日：2008-04-24
申请号：US11736097
申请日：2007-04-17
申请人： Chun-Chih Lai , Yen-Shu Lai
发明人： Chun-Chih Lai , Yen-Shu Lai
IPC分类号： B65D6/00
CPC分类号： B65D9/06 , B65D5/26 , B65D5/28
摘要： A box, which is fashioned from wood chip, is applicable to goods or food packaging and can be converted into a gift box by a special design. The wood chip must be thick enough to be adaptable to a knife mold and pressed with a plurality of creases. Fold over the creases preformed on the wood chip so as to turn it into a cuboid receptacle.
摘要翻译：一种由木片制成的盒子适用于商品或食品包装，可以通过特殊设计转换为礼品盒。木屑必须足够厚以适应于刀模并用多个折痕压制。折叠在木片上预成型的折痕，以便将其变成长方体的容器。

74. 发明申请

US20080079064A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080079064A1
公开(公告)日：2008-04-03
申请号：US11898528
申请日：2007-09-13
申请人： Sheng-Chih Lai , Hang-Ting Lue
发明人： Sheng-Chih Lai , Hang-Ting Lue
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/517 , H01L29/513 , H01L29/66833 , H01L29/792
摘要： A semiconductor device having a non-volatile memory and a method of manufacturing the same are provided. The semiconductor device includes a base material and a stack structure. The stack structure disposed on the base material at least includes a tunneling layer, a trapping layer and a dielectric layer. The trapping layer is disposed on the tunneling layer. The dielectric layer has a dielectric constant and is disposed on the trapping layer. The dielectric layer is transformed from a first solid state to a second solid state when the dielectric layer undergoes a process.
摘要翻译：提供了具有非易失性存储器的半导体器件及其制造方法。半导体器件包括基底材料和堆叠结构。设置在基材上的堆叠结构至少包括隧穿层，捕获层和电介质层。捕获层设置在隧道层上。电介质层具有介电常数并且设置在捕获层上。当电介质层进行处理时，电介质层从第一固态转变为第二固态。

75. 发明申请

US20080026579A1 COPPER DAMASCENE PROCESS 审中-公开
标题翻译：铜加工工艺
公开(公告)号：US20080026579A1
公开(公告)日：2008-01-31
申请号：US11459931
申请日：2006-07-25
申请人： Kuo-Chih Lai , Mei-Ling Chen , Jei-Ming Chen , Hsin-Hsing Chen , Shih-Feng Su , Meng-Chi Chen
发明人： Kuo-Chih Lai , Mei-Ling Chen , Jei-Ming Chen , Hsin-Hsing Chen , Shih-Feng Su , Meng-Chi Chen
IPC分类号： H01L21/44
CPC分类号： H01L21/76877 , H01L21/02074 , H01L21/76883
摘要： A copper damascene process includes providing a substrate having a dielectric layer thereon, forming at least a copper damascene structure in the dielectric layer, performing a heat treatment on the substrate, and performing a reduction plasma treatment on a surface of the copper damascene structure. The impurities formed in the copper damascene process are removed by the heat treatment, therefore the copper damascene structure is completely reduced by the reduction plasma treatment and is improved.
摘要翻译：铜镶嵌工艺包括提供其上具有介电层的基板，在介电层中至少形成铜镶嵌结构，对基板进行热处理，并对铜镶嵌结构的表面进行还原等离子体处理。通过热处理除去在铜镶嵌工艺中形成的杂质，因此通过还原等离子体处理完全减少铜镶嵌结构并改善。

76. 发明申请

US20080009150A1 CHIP CONNECTION DEVICE 审中-公开
标题翻译：芯片连接装置
公开(公告)号：US20080009150A1
公开(公告)日：2008-01-10
申请号：US11769714
申请日：2007-06-28
申请人： KUANG-CHIH LAI
发明人： KUANG-CHIH LAI
IPC分类号： H01R12/00
CPC分类号： H01R12/88
摘要： The chip connection device's main feature is a structurally simple and rigid engagement member. The engagement member mainly contains a knob having only a top cylinder for turning and indication, an eccentric base cylinder to cause reliable relative lateral movement of the top and base plates of the chip connection device, and a flange between the top and base cylinders. The flange is sandwiched between a top board and a base board of the engagement member and the engagement member is in turn housed between the extensions from the top and base plates of the chip connection device. A clamping member is further provided to clamp the extensions from the top and base plates vertically together and, therefore, the plates can only be engaged into relative lateral movement.
摘要翻译：芯片连接装置的主要特征是结构简单而刚性的接合构件。接合构件主要包括仅具有用于转动和指示的顶部气缸的旋钮，用于使芯片连接装置的顶板和底板可靠地相对横向移动的偏心基座圆筒以及顶部和底部气缸之间的凸缘。凸缘被夹在接合构件的顶板和基板之间，并且接合构件又被容纳在来自芯片连接装置的顶板和底板的延伸部之间。进一步设置夹紧构件以将延伸部从顶板和底板垂直地夹在一起，因此，板只能接合到相对的横向运动中。

77. 发明申请

US20070222602A1 Systems and methods for enhancing the magnetic coupling in a wireless communication system 有权
标题翻译：用于增强无线通信系统中的磁耦合的系统和方法
公开(公告)号：US20070222602A1
公开(公告)日：2007-09-27
申请号：US11378908
申请日：2006-03-17
申请人： Huan-Chin Luo , Lu-Shan Chiang , Ying-Che Lo , Chia-Jui Shen , Po-Chih Lai , Kung-Hua Lee
发明人： Huan-Chin Luo , Lu-Shan Chiang , Ying-Che Lo , Chia-Jui Shen , Po-Chih Lai , Kung-Hua Lee
IPC分类号： G08B13/14
CPC分类号： G06K7/10178 , G06K7/10336 , H01Q1/2208
摘要： An RFID system comprises an intermediate device that includes a first and second antenna coils connected together in a close loop format. The coils are formed on a flexible substrate that can be folded around a magnetic flux blocker such that one loop is on side of the blocker and the other loop is on the other side of the blocker. The intermediate device can then improve communication between a reader on one side of the blocker and a tag on the other. The coil on the reader side of the blocker can receive RF signals being generated by the reader and convert them to an electrical signal that can be passed to the coil on the tag side of the blockage. The second coil can then generate an RF signal that can be transmitted to the tag.
摘要翻译： RFID系统包括中间装置，其包括以闭环格式连接在一起的第一和第二天线线圈。线圈形成在柔性基板上，该柔性基板可以围绕磁通阻挡器折叠，使得一个环路位于阻塞器的一侧，另一个环路在阻塞器的另一侧上。然后，中间设备可以改善阻挡器一侧的读取器与另一侧上的标签之间的通信。阻塞器的读取器侧的线圈可以接收读取器产生的RF信号，并将它们转换成可以传递到阻塞标签侧的线圈的电信号。然后，第二线圈可以产生可以发送到标签的RF信号。

78. 发明申请

US20060281299A1 METHOD OF FABRICATING SILICON CARBIDE-CAPPED COPPER DAMASCENE INTERCONNECT 审中-公开
标题翻译：硅碳化铜复合物互连的制备方法
公开(公告)号：US20060281299A1
公开(公告)日：2006-12-14
申请号：US11462045
申请日：2006-08-03
申请人： Jei-Ming Chen , Chin-Hsiang Lin , Chih-Chien Liu , Kuo-Chih Lai
发明人： Jei-Ming Chen , Chin-Hsiang Lin , Chih-Chien Liu , Kuo-Chih Lai
IPC分类号： H01L21/4763 , H01L23/48
CPC分类号： H01L21/76849 , C23C16/0245 , C23C16/325 , H01L21/3148 , H01L21/76834 , H01L21/76867 , H01L21/76883 , H01L21/76889 , H01L23/48
摘要： A dielectric layer overlying a substrate is prepared. A damascene opening is etched into the dielectric layer. The damascene opening is filled with copper or copper alloy. A surface of the copper or copper alloy is treated with hydrogen-containing plasma such as H2 or NH3 plasma. The treated surface of the copper or copper alloy then reacts with trimethylsilane or tertramethylsilane under plasma enhanced chemical vapor deposition (PECVD) conditions. Subsequently, by PECVD, a silicon carbide layer is in-situ deposited on the copper or copper alloy.
摘要翻译：准备覆盖衬底的电介质层。镶嵌开口蚀刻到电介质层中。镶嵌开口填充有铜或铜合金。铜或铜合金的表面用含氢等离子体如H 2 N 3或NH 3 3等离子体处理。然后在等离子体增强化学气相沉积（PECVD）条件下，铜或铜合金的处理表面与三甲基硅烷或三甲基硅烷反应。随后，通过PECVD，将碳化硅层原位沉积在铜或铜合金上。

79. 发明申请

US20060199393A1 H20 PLASMA AND H20 VAPOR METHODS FOR RELEASING CHARGES 审中-公开
标题翻译： H20等离子体和H 2 O蒸汽方法用于释放电荷
公开(公告)号：US20060199393A1
公开(公告)日：2006-09-07
申请号：US11383931
申请日：2006-05-17
申请人： Yuan-Bang Lee , Tzu-Yang Wu , Sheng-Liang Pan , U. Lin , Yu-Chih Lai , De-Fang Chen , Pei-Hsuan Lin , Shan-Hua Wu , Hung-Hsin Liu
发明人： Yuan-Bang Lee , Tzu-Yang Wu , Sheng-Liang Pan , U. Lin , Yu-Chih Lai , De-Fang Chen , Pei-Hsuan Lin , Shan-Hua Wu , Hung-Hsin Liu
IPC分类号： H01L21/302
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/67069
摘要： An in-situ performed method utilizing a pure H2O plasma to remove a layer of resist from a substrate or wafer without substantially accumulating charges thereon. Also, in-situ performed methods utilizing a pure H2O plasma or a pure H2O vapor to release or remove charges from a surface or surfaces of a substrate or wafer that have accumulated during one or more IC fabrication processes.
摘要翻译：使用纯H 2 O 2等离子体的原位执行方法从衬底或晶片上去除一层抗蚀剂，而基本上不累积电荷。而且，使用纯H 2 O 2等离子体或纯H 2 O 2蒸气的原位实施方法从基板或晶片的表面或表面释放或去除电荷其在一个或多个IC制造过程中积累。

80. 发明申请

US20060199367A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20060199367A1
公开(公告)日：2006-09-07
申请号：US11164824
申请日：2005-12-07
申请人： Jim-Jey Huang , Chih-Chien Liu , Feng-Yu Hsu , Jei-Ming Chen , Kuo-Chih Lai
发明人： Jim-Jey Huang , Chih-Chien Liu , Feng-Yu Hsu , Jei-Ming Chen , Kuo-Chih Lai
IPC分类号： H01L21/4763
CPC分类号： H01L23/53238 , H01L21/76807 , H01L21/76832 , H01L21/76834 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing method of interconnect is provided. A dielectric layer is provided. A metal layer is formed in the dielectric layer. A fluorine-containing barrier layer is formed on the dielectric layer and covers the metal layer. The fluorine-containing barrier layer is formed by using chemical deposition method and introducing fluorine to the film in-situ.
摘要翻译：提供了互连的制造方法。提供介电层。在电介质层中形成金属层。在电介质层上形成含氟阻挡层，覆盖金属层。通过使用化学沉积方法形成含氟阻挡层，并将氟引入到膜中。

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