专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US08809667B2 Thermoelectric semiconductor component 有权
标题翻译：热电半导体元件
公开(公告)号：US08809667B2
公开(公告)日：2014-08-19
申请号：US13138199
申请日：2010-01-12
申请人： Martin Kittler , Manfred Reiche
发明人： Martin Kittler , Manfred Reiche
IPC分类号： H01L35/12 , H01L27/16
CPC分类号： H01L35/12 , H01L27/16 , H01L35/32
摘要： A thermoelectric semiconductor component, comprising an electrically insulating substrate surface and a plurality of spaced-apart, alternating p-type (4) and n-type semiconductor structural elements (5) which are disposed on said surface and which are connected to each other in series in an electrically conductive manner alternatingly at two opposite ends of the respective semiconductor structural elements by conductive structures, in such a way that a temperature difference (2ΔT) between the opposite ends produces an electrical voltage between the conductive structures or that a voltage difference between the conductive structures (7, 9; 13, 15) produces a temperature difference (2ΔT) between the opposite ends, characterized in that the semiconductor structural elements have a first boundary surface between a first and a second silicon layer, the lattice structures of which are considered ideal and are rotated by an angle of rotation relative to each other about a first axis perpendicular to the substrate surface and tilted by a tilt angle about a second axis lying parallel to the substrate surface, in such a way that a dislocation network is present in the region of the boundary surface.
摘要翻译：一种热电半导体部件，包括电绝缘基板表面和多个间隔开的交替的p型（4）和n型半导体结构元件（5），它们设置在所述表面上并彼此连接通过导电结构在相应的半导体结构元件的两个相对端处交替地以导电方式串联，使得相对端之间的温差（2＆Dgr; T）在导电结构之间产生电压，或者电压导电结构（7,9; 13,15）之间的差异在相对端之间产生温度差（2＆Dgr; T），其特征在于半导体结构元件具有第一和第二硅层之间的第一边界面，它们的晶格结构被认为是理想的并且围绕第一轴线p相对于彼此旋转旋转角度垂直于衬底表面并且以平行于衬底表面的第二轴线的倾斜角度倾斜，使得位错网络存在于边界表面的区域中。

72. 发明申请

US20140027715A1 P-TYPE GRAPHENE BASE TRANSISTOR 有权
标题翻译： P型石墨基片晶体管
公开(公告)号：US20140027715A1
公开(公告)日：2014-01-30
申请号：US13721360
申请日：2012-12-20
申请人： IHP GmbH - Innovations for High Performance Microelectronics
发明人： Wolfgang Mehr , Jaroslaw Dabrowski , Max Lemme , Gunther Lippert , Grzegorz Lupina , Johann Christoph Scheytt
IPC分类号： H01L29/73
CPC分类号： H01L29/7317 , H01L29/1606 , H01L29/165 , H01L29/267 , H01L29/402 , H01L29/7371 , H01L29/7606
摘要： A hot hole transistor with a graphene base comprises on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer.
摘要翻译：具有石墨烯基底的热孔晶体管在基底上包括发射极层，集电极层和包含石墨烯层的基底层，其中发射极阻挡层设置在基极层和发射极层之间，并且集电极屏障层布置在基底和收集层之间并且邻近石墨烯层。

73. 发明授权

US08477935B2 Method and apparatus for calculating a polynomial multiplication, in particular for elliptic curve cryptography 有权
标题翻译：用于计算多项式乘法的方法和装置，特别是用于椭圆曲线密码术
公开(公告)号：US08477935B2
公开(公告)日：2013-07-02
申请号：US11885827
申请日：2006-03-06
申请人： Peter Langendoerfer , Zoya Dyka , Peter Steffen
发明人： Peter Langendoerfer , Zoya Dyka , Peter Steffen
IPC分类号： H04K1/00
CPC分类号： G06F7/724 , G06F7/5324 , G06F7/725 , G06F17/10 , H04L9/3066 , H04L9/3093 , H04L2209/122 , H04L2209/80
摘要： Safeguarding communication channels is required in particular in wireless networks. The use of encryption mechanisms in the form of software is limited by the required calculation and energy capacities of mobile terminals. Costs are of significance when using hardware solutions for cryptographic operations. The present invention provides an approach which simultaneously tackles all those points. It concerns a hardware accelerator for polynomial multiplication in extended Galois fields (GF), wherein the per se known Karatsuba method is iteratively applied in accordance with the invention. When using the invention the area requirement can be reduced for example from 6.2 mm2 to 2.1 mm2. The solution according to the invention also reduces the energy consumption in comparison with solutions in accordance with the state of the art by 30%.
摘要翻译：特别是在无线网络中需要保护通信信道。以软件形式使用加密机制受移动终端所需的计算和能量容量的限制。使用硬件解决方案进行加密操作时，成本是非常重要的。本发明提供了一种同时解决所有这些问题的方法。它涉及在扩展伽罗瓦域（GF）中的多项式乘法的硬件加速器，其中根据本发明迭代地应用本身已知的Karatsuba方法。当使用本发明时，面积要求可以从例如6.2mm2减小到2.1mm 2。根据本发明的解决方案还将与根据现有技术的解决方案相比降低了30％的能量消耗。

74. 发明授权

US08443274B2 Test circuit for testing execution of a handshake protocol and method for testing execution of handshake protocol 失效
标题翻译：用于测试执行握手协议的测试电路和用于测试执行握手协议的方法
公开(公告)号：US08443274B2
公开(公告)日：2013-05-14
申请号：US13138360
申请日：2010-01-18
申请人： Steffen Zeidler
发明人： Steffen Zeidler
IPC分类号： G06F11/00
CPC分类号： H04L1/24 , G06F11/221 , H04L1/16
摘要： The present invention relates to a checker circuit for a handshake protocol. The checker circuit detects common errors that occur when two communication unit on execute the handshake protocol. The checker circuit is characterized by a compact circuit design that is associated with reduced susceptibility to circuit errors and a significantly reduced spatial requirement. The invention also relates to a method for checking the execution of the handshake protocol.
摘要翻译：本发明涉及一种用于握手协议的检查电路。检查电路检测当两个通信单元执行握手协议时发生的常见错误。校验电路的特征在于紧凑的电路设计，其与对电路错误的敏感性降低以及显着降低的空间要求相关联。本发明还涉及一种用于检查握手协议的执行的方法。

75. 发明授权

US08227888B2 Semiconductor component with countersignal circuit for preventing crosstalk between electronic assemblies 有权
标题翻译：具有用于防止电子组件之间串扰的集中电路的半导体部件
公开(公告)号：US08227888B2
公开(公告)日：2012-07-24
申请号：US11547578
申请日：2005-04-08
申请人： Gunther Lippert , Gerald Lippert
发明人： Gunther Lippert , Gerald Lippert
IPC分类号： H01L29/00
CPC分类号： H01L27/0248 , H01L21/765 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component including a first integrated circuit in a substrate which is adapted to produce electrical signals with a high-frequency signal component, wherein the substrate is such that the high-frequency signal component can propagate on a substrate surface and/or in the substrate interior, a second integrated circuit in the same substrate which is such that its function can be compromised by high-frequency signals, and a countersignal circuit in the same substrate which is adapted to deliver an electrical countersignal which at least at a selected location of the substrate surface and/or the substrate interior attenuates or eliminates the high-frequency electrical signal component emanating from the first integrated circuit, wherein the countersignal circuit includes a receiver which is adapted to produce an electrical signal dependent on the instantaneous field strength of the high-frequency signal component, and a shielding transistor provided in the substrate and having a control electrode and a first field electrode and a second field electrode, whose control electrode is connected on the input side to the receiver and whose first and second field electrodes are acted upon with a predeterminable first and second electrical potential.
摘要翻译：一种半导体元件，包括在衬底中的第一集成电路，其适于产生具有高频信号分量的电信号，其中所述衬底使得所述高频信号分量可以在衬底表面和/或所述衬底中传播内部，在相同基板中的第二集成电路，其功能可以被高频信号损害，以及在相同基板中的基准信号电路，其适于传递电信号，该电信号至少在所选择的位置处衬底表面和/或衬底内部衰减或消除从第一集成电路发出的高频电信号分量，其中，该信号电路包括接收器，该接收器适于产生取决于高频电信号的瞬时场强的电信号，频率信号分量，以及设置在基板中的屏蔽晶体管控制电极和第一场电极和第二场电极，其控制电极在输入侧连接到接收器，并且其第一和第二场电极具有可预定的第一和第二电位。

76. 发明申请

US20120002669A1 PROTOCOL ACCELERATOR MODULE WITH PACKET FORWARDING FUNCTION AND A METHOD OF TRANSCEIVER OPERATION FOR RAPID FORWARDING OF DATA PACKETS 有权
标题翻译：具有分组转发功能的协议加速器模块和用于快速转发数据分组的收发器操作方法
公开(公告)号：US20120002669A1
公开(公告)日：2012-01-05
申请号：US12737274
申请日：2010-03-16
申请人： Daniel Dietterle , Peter Langendörfer
发明人： Daniel Dietterle , Peter Langendörfer
IPC分类号： H04L12/56 , H04J3/00
CPC分类号： H04L12/417 , H04W88/02
摘要： The present invention relates to a protocol accelerator module for a data transmission protocol level of a transceiver, particularly but not exclusively for rapid forwarding of data packets in wireless sensor networks using the time-division multiple access method according to the IEEE 802.15.4 standard. The invention also relates to a method of transceiver operation for rapid forwarding of data packets, likewise particularly, but not exclusively, in wireless sensor networks using the time-division multiple access method according to the IEEE 802.15.4 standard. The core of the invention is a reference table which stores references from identifiers of second transceivers to identifiers of third transceivers as well as references from specific messages to identifiers of third transceivers. A transceiver can check during reception of a data packet whether it is a data packet to be forwarded, and can take appropriate precautions for rapid sending of a data packet to be forwarded. This allows real-time conditions of many applications to be met.
摘要翻译：本发明涉及一种用于收发器的数据传输协议级别的协议加速器模块，特别地但不排他地用于使用根据IEEE 802.15.4标准的时分多址方法在无线传感器网络中快速转发数据分组。本发明还涉及用于使用根据IEEE 802.15.4标准的时分多址方法来快速转发数据分组的收发器操作的方法，特别地但不排他地在无线传感器网络中。本发明的核心是存储从第二收发器的标识符到第三收发器的标识符的引用以及从特定消息到第三收发器的标识符的引用的参考表。收发器可以在接收数据包时检查是否是要转发的数据包，并且可以采取适当的预防措施来快速发送要转发的数据包。这允许满足许多应用的实时条件。

77. 发明授权

US08035167B2 Complementary bipolar semiconductor device 有权
标题翻译：互补双极半导体器件
公开(公告)号：US08035167B2
公开(公告)日：2011-10-11
申请号：US12448032
申请日：2007-12-07
申请人： Dieter Knoll , Bernd Heinemann , Karl-Ernst Ehwald
发明人： Dieter Knoll , Bernd Heinemann , Karl-Ernst Ehwald
IPC分类号： H01L27/015
CPC分类号： H01L27/0623 , H01L21/82285 , H01L21/8249 , H01L27/0826
摘要： A complementary bipolar semiconductor device (CBi semiconductor device) comprising a substrate of a first conductivity type, active bipolar transistor regions in the substrate, in which the base, emitter and collector of vertical bipolar transistors are arranged, vertical epitaxial-base npn bipolar transistors in a first subset of the active bipolar transistor regions, vertical epitaxial-base pnp bipolar transistors in a second subset of the active bipolar transistor regions, collector contact regions which are respectively arranged adjoining an active bipolar transistor region, and shallow field insulation regions which respectively laterally delimit the active bipolar transistor regions and the collector contact regions, wherein arranged between the first or the second or both the first and also the second subset of active bipolar transistor regions on the one hand and the adjoining collector contact regions on the other hand is a respective shallow field insulation region of a first type with a first depthwise extent in the direction of the substrate interior and shallow field insulation regions of a second type of a second greater depthwise extent than the first depthwise extent of the active bipolar transistor regions delimit the active bipolar transistor regions and collector contact regions viewed in cross-section at their sides facing away from each other.
摘要翻译：一种互补双极性半导体器件（CBi半导体器件），包括第一导电类型的衬底，衬底中的有源双极晶体管区域，其中垂直双极晶体管的基极，发射极和集电极被布置，垂直外延基极npn双极晶体管有源双极晶体管区域的第一子集，有源双极晶体管区域的第二子集中的垂直外延基极pnp双极晶体管，分别布置成邻接有源双极晶体管区域的集电极接触区域和分别横向界定有源双极性晶体管区域和集电极接触区域，其中一方面被布置在一方面的有源双极性晶体管区域的第一或第二或第二子集之间，另一方面相邻的集电极接触区域是相应的浅场绝缘区域为第一在基板内部的方向上具有第一深度方向的第一类型，并且第二类型的浅的场绝缘区域比有源双极晶体管区域的第一深度方向的第二较深的深度方向的区域限定有源双极晶体管区域和集电极接触区域横截面在彼此背离的一侧。

78. 发明授权

US07924196B2 Digital-analog converter 有权
标题翻译：数模转换器
公开(公告)号：US07924196B2
公开(公告)日：2011-04-12
申请号：US12587105
申请日：2009-09-30
申请人： Hans Gustat
发明人： Hans Gustat
IPC分类号： H03M1/66
CPC分类号： H03M1/0682 , H03K19/0136 , H03K19/01806 , H03M1/1004 , H03M1/1009 , H03M1/745
摘要： A parallel digital-analog converter for the conversion of a plurality of differential digital input signals into a differential analog output signal, including a group of 1-bit digital-analog converters (200) which respectively include an intermediate storage cell (202) and a current cell (201) and which are adapted to feed a respective output current to a first (204) or a second output contact (206) in dependence on a logic state of the intermediate storage cell, wherein a first of two outputs of an intermediate storage cell (202) is connected by way of an input resistor (220) to a first signal terminal (208.1) of a first transistor (208) and a second of the two outputs of the intermediate storage cell (202) is connected by way of an input resistor (218) to a first signal terminal (210.1) of a second transistor (210), the respective first signal terminals of the first and second transistors are additionally connected by way of a constant current source (212 and 214) to a ground terminal (216), and wherein a respective time-constant bias voltage is applied at a respective control terminal (208.2 and 210.2) of the first and second transistors.
摘要翻译：一种用于将多个差分数字输入信号转换为差分模拟输出信号的并行数模转换器，包括一组1位数模转换器（200），它们分别包括中间存储单元（202）和当前单元（201），其适于根据中间存储单元的逻辑状态将相应的输出电流馈送到第一（204）或第二输出触点（206），其中中间存储单元的两个输出中的第一个输出存储单元（202）通过输入电阻器（220）连接到第一晶体管（208）的第一信号端子（208.1），并且中间存储单元（202）的两个输出端中的第二个输出端连接的输入电阻器（218）连接到第二晶体管（210）的第一信号端子（210.1），第一和第二晶体管的各个第一信号端子通过恒定电流源（212和214）附加地连接到一个地面终端（216），并且其中在第一和第二晶体管的相应控制端（208.2和210.2）处施加相应的时间常数偏置电压。

79. 发明授权

US07880189B2 Dislocation-based light emitter 有权
标题翻译：基于位错的光发射器
公开(公告)号：US07880189B2
公开(公告)日：2011-02-01
申请号：US11919915
申请日：2006-05-03
申请人： Martin Kittler , Manfred Reiche , Tzanimir Arguirov , Winfried Seifert
发明人： Martin Kittler , Manfred Reiche , Tzanimir Arguirov , Winfried Seifert
IPC分类号： H01L33/00
CPC分类号： H01L33/34 , H01L33/16 , H01S5/3224 , H01S5/3227
摘要： A light-emitting semiconductor component comprising a substrate which has a first interface between a first and a second silicon layer, whose lattice structures which are considered as ideal are rotated relative to each other through a twist angle about a first axis perpendicular to the substrate surface and are tilted through a tilt angle about a second axis parallel to the substrate surface, in such a way that a dislocation network is present in the region of the interface, wherein the twist angle and the tilt angle are so selected that an electroluminescence spectrum of the semiconductor component has an absolute maximum of the emitted light intensity at either 1.3 micrometers light wavelength or 1.55 micrometers light wavelength.
摘要翻译：一种发光半导体部件，包括基板，该基板在第一和第二硅层之间具有被认为是理想的晶格结构的第一界面，通过围绕垂直于基板表面的第一轴线的扭转角相对于彼此旋转并且以平行于衬底表面的第二轴线的倾斜角倾斜，使得在界面区域中存在位错网络，其中扭转角和倾斜角被选择为使得电致发光光谱半导体元件具有在1.3微米光波长或1.55微米光波长处的发射光强度的绝对最大值。

80. 发明授权

US12100894B2 Gradient index metamaterial lens for terahertz radiation 有权
公开(公告)号：US12100894B2
公开(公告)日：2024-09-24
申请号：US17762892
申请日：2020-09-24
申请人： IHP GmbH—Innovations for High Performance Microelectronics/Leibniz-Institut für Innovative Mikroelektronik
发明人： Zhibo Cao , Mehmet Kaynak , Mattias Wietstruck , Matteo Stocchi
IPC分类号： H01Q15/10 , G02B1/00 , H01Q19/06
CPC分类号： H01Q15/10 , G02B1/002 , H01Q19/062
摘要： A lens for terahertz radiation, which can be used in an antenna arrangement, comprises a cylindrical lens body made of silicon having a planar front surface and a planar back surface. The lens body has a front body region which forms a silicon metamaterial with a relative permittivity that decreases in a lateral direction with increasing radial distance from a cylinder axis. A back body region is immediately adjacent to the front body region and extends to the back surface. It consists of bulk silicon having a laterally constant relative permittivity. The front body region comprises holes that are distributed on the front surface in rings that are concentric with respect to the cylinder axis. The holes extend from the front surface to respective hole bottoms at an equal bottom level in a depth direction. The hole bottoms interface with the back body region.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式