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61. 发明公开

EP0343737A3 A transferred electron effect device 失效
标题翻译：转移电子效应器件
公开(公告)号：EP0343737A3
公开(公告)日：1991-01-02
申请号：EP89201295.6
申请日：1989-05-22
申请人： PHILIPS ELECTRONICS UK LIMITED , Philips Electronics N.V.
发明人： Battersby, Stephen John , Shannon, John Martin , Szubert, Marek
IPC分类号： H01L47/02
CPC分类号： H01L47/026
摘要： A transferred electron effect device has a semiconductor body with an active region (2) of n conductivity type formed of a semiconductor material having a relatively low mass,high mobility conduction band main minimum and at least one relatively high mass, low mobility conduction band satellite minimum, and an injection zone (3) adjoining the active region (2) for causing electrons to be emitted, under the influence of an applied electric field, from the injection zone (3) into the active region (2) with an energy comparable to that of the relatively high mass, low mobility, conduction band satellite minima of the active region. The injection zone (3) is formed by first and second n conductivity type regions (4 and 5) separated by a barrier region (6) which has an impurity concentration characteristic of the-p conductivity type and which is sufficiently thin as to be fully depleted of free charge carriers under zero bias, at least one of the first and second regions (4) being highly doped relative to the active region at least adjacent the barrier region and the barrier region (6) having an impurity concentration sufficient to provide a potential barrier (P) to the flow of electrons of a height such that in operation of the device, electrons with sufficient energy to surmount the potential barrier (P) provided by the barrier region (6) are emitted into the active region (2) with an energy comparable to that of a conduction band satellite minimum of the active region (2).

62. 发明公开

EP0205565A1 A MICROWAVE TRANSFERRED ELECTRON DEVICE. 失效
标题翻译：微波电子转移变更。
公开(公告)号：EP0205565A1
公开(公告)日：1986-12-30
申请号：EP86900440
申请日：1985-12-04
申请人： AMERICAN TELEPHONE & TELEGRAPH
发明人： COOPER JAMES ALBERT JR , THORNBER KARVEL KUHN
IPC分类号： H01L29/78 , H01L47/00 , H01L47/02
CPC分类号： H01L47/02
摘要： Dispositif à micro-ondes dans lequel la charge des paquets à la dérive est mise en images perpendiculairement à la direction du paquet de charge, de sorte qu'essentiellement tout le champ de charge d'espace de valeur moyenne par rapport aux paquets se trouve à angle droit par rapport à la direction de dérive. Cela permet la formation continue de paquets de charge contigus.

63. 发明授权

KR102220445B1 반도체 소자 및 그 제조 방법 有权
公开(公告)号：KR102220445B1
公开(公告)日：2021-02-25
申请号：KR1020190078909
申请日：2019-07-01
申请人： 삼성전자주식회사 , 성균관대학교산학협력단
发明人： 박진홍 , 정길수 , 허근 , 김승준
IPC分类号： H01L47/02 , H01L47/00 , H01L21/28 , H01L29/16 , H01L21/02 , H01L21/8234
摘要： 실시예의반도체소자는기판과, 상기기판상에배치된절연층과, 상기절연층상에배치된문턱전압조절층과, 상기문턱전압조절층상에배치된제1 반도체층과, 상기문턱전압조절층상에배치되어상기제1 반도체층의일부를덮는제2 반도체층을포함할수 있다. 실시예에따른부성미분저항소자는문턱전압조절층을형성함으로써, 게이트전압으로피크전압을소자의동작범위내에서자유롭게조절할수 있는효과가있다.

64. 发明公开

KR1020210005333A 반도체 소자 및 그 제조 방법 有权
公开(公告)号：KR1020210005333A
公开(公告)日：2021-01-14
申请号：KR1020190078909
申请日：2019-07-01
申请人： 삼성전자주식회사 , 성균관대학교산학협력단
发明人： 박진홍 , 정길수 , 허근 , 김승준
IPC分类号： H01L47/02 , H01L47/00 , H01L21/28 , H01L29/16 , H01L21/02 , H01L21/8234
摘要： 실시예의반도체소자는기판과, 상기기판상에배치된절연층과, 상기절연층상에배치된문턱전압조절층과, 상기문턱전압조절층상에배치된제1 반도체층과, 상기문턱전압조절층상에배치되어상기제1 반도체층의일부를덮는제2 반도체층을포함할수 있다. 실시예에따른부성미분저항소자는문턱전압조절층을형성함으로써, 게이트전압으로피크전압을소자의동작범위내에서자유롭게조절할수 있는효과가있다.

65. 发明授权

EP1388901B1 Structure for assembly of a Gunn diode 有权
标题翻译： Struktur zur Zusammensetzung einer Gunn Diode
公开(公告)号：EP1388901B1
公开(公告)日：2013-10-30
申请号：EP03025203.5
申请日：1999-04-27
申请人： New Japan Radio Co., Ltd.
发明人： Nakagawa, Atsushi , Watanabe, Kenichi
IPC分类号： H01L47/02 , H03B7/14 , H03B9/14
CPC分类号： H01L47/026 , H01L2224/48091 , H01L2224/73257 , H03B7/14 , H03B9/14 , H03B9/147 , H01L2924/00014

66. 发明授权

EP1388902B1 Fabricating method of Gunn diode 有权
标题翻译：对于耿氏制造工艺
公开(公告)号：EP1388902B1
公开(公告)日：2013-06-19
申请号：EP03025205.0
申请日：1999-04-27
申请人： New Japan Radio Co., Ltd.
发明人： Nakagawa, Atsushi , Watanabe, Kenichi
IPC分类号： H01L47/02 , H03B7/14 , H03B9/14
CPC分类号： H01L47/026 , H01L2224/48091 , H01L2224/73257 , H03B7/14 , H03B9/14 , H03B9/147 , H01L2924/00014

67. 发明公开

EP1388902A3 Fabricating method of Gunn diode 有权
标题翻译： HerstellungsverfahrenfürGunndiode
公开(公告)号：EP1388902A3
公开(公告)日：2005-12-07
申请号：EP03025205.0
申请日：1999-04-27
申请人： New Japan Radio Corp., Ltd.
发明人： Nakagawa, Atsushi , Watanabe, Kenichi
IPC分类号： H01L47/02 , H03B7/14 , H03B9/14
CPC分类号： H01L47/026 , H01L2224/48091 , H01L2224/73257 , H03B7/14 , H03B9/14 , H03B9/147 , H01L2924/00014
摘要： A fabricating method for a Gunn diode comprising a first step of sequentially laminating and forming a first semiconductor layer which serves as a first contact layer, an active layer, and a second semiconductor layer which serves as a second contact layer onto a semiconductor substrate, a second step of forming first and second electrodes of specified shapes onto the second contact layer, and a third step of removing the second semiconductor layer and the active layer through dry etching wherein the first and second electrodes are used as masks.
摘要翻译： NRD指南Gunn振荡器，其通过将两个平行的金属板放置在不超过使用频率的自由空间波长的一半的距离处，并且将夹持介于平行板之间的介质带状线的NRD引导电路与耿氏二极管，其中所述NRD导向耿氏振荡器包括绝缘或半绝缘材料的板基板，其上形成有与信号线连接的信号电极和相对于信号电极绝缘的接地电极，耿氏二极管形成有在同一平面上的阳极电极和阴极电极，其中一个电极连接到板基板的信号电极，另一个连接到接地电极，以及散热片，用于支撑板基板的后表面相对于平行板之一，并且其中板基板的信号线的尖端与电介质电磁组合 ic带线。

68. 发明授权

EP1139452B1 Heterojunction bipolar transferred electron tetrode 有权
标题翻译：双极转移电子四极管异质结
公开(公告)号：EP1139452B1
公开(公告)日：2005-08-17
申请号：EP01302992.1
申请日：2001-03-29
申请人： Sharp Kabushiki Kaisha
发明人： Twynam, John Kevin
IPC分类号： H01L47/02
CPC分类号： H01L47/02 , Y10S257/912

69. 发明公开

EP0954039A1 Gunn diode, NRD guide gunn oscillator and fabricating method 有权
标题翻译： Gunndiode，NRD Leitungsschaltung和Verfahren zur Herstellung
公开(公告)号：EP0954039A1
公开(公告)日：1999-11-03
申请号：EP99108231.4
申请日：1999-04-27
申请人： New Japan Radio Corp., Ltd.
发明人： Atsushi, Nakagawa, c/o New Japan Radio Co., Ltd. , Kenichi, Watanabe, c/o New Japan Radio Co., Ltd.
IPC分类号： H01L47/02 , H03B7/14 , H03B9/14
CPC分类号： H01L47/026 , H01L2224/48091 , H01L2224/73257 , H03B7/14 , H03B9/14 , H03B9/147 , H01L2924/00014
摘要： A Gunn diode which is formed by sequentially laminating a first semiconductor layer, an active layer and a second semiconductor layer onto a semiconductor substrate. The Gunn diode comprises first and second electrodes arranged on the second semiconductor layer for impressing voltage on the active layer, and a concave portion which is cut from around the first electrode in a direction of the second semiconductor layer and the active layer and which subdivides the second semiconductor layer and the active layer to which the first electrode is connected as a region which functions as a Gunn diode. Since etching for defining a region that is to function as a Gunn diode is performed by self-alignment dry etching utilizing electrode layers formed above this region as masks, variations in characteristics are restricted. There are also disclosed a NRD guide Gunn oscillator attached to the NRD guide for obtaining a high frequency oscillation output of the Gunn diode, a fabricating method of the Gunn diode, and a structure for assembly of the Gunn diode.
摘要翻译：耿氏二极管，其通过将第一半导体层，有源层和第二半导体层依次层叠到半导体衬底上而形成。耿氏二极管包括布置在第二半导体层上的用于在有源层上施加电压的第一和第二电极，以及在第二半导体层和有源层的方向上从第一电极周围切割的凹部，第二半导体层和第一电极连接的有源层作为用作耿氏二极管的区域。由于用于限定用作耿氏二极管的区域的蚀刻是通过利用在该区域上形成的电极层作为掩模的自对准干法蚀刻进行的，特性的变化受到限制。还公开了一种NRD指南Gunn振荡器，其连接到NRD指南，用于获得耿氏二极管的高频振荡输出，耿氏二极管的制造方法以及用于组装耿氏二极管的结构。

70. 发明授权

EP0462655B1 A transferred electron effect device and a method of manufacturing such a device 失效
标题翻译：其制造的电子转移组件和方法。
公开(公告)号：EP0462655B1
公开(公告)日：1995-09-13
申请号：EP91201470.1
申请日：1991-06-13
申请人： PHILIPS ELECTRONICS UK LIMITED , Philips Electronics N.V.
发明人： Battersby, Stephen John, c/o Philips Research Lab. , Jones, Stewart Barry, c/o Philips Components
IPC分类号： H01L47/02
CPC分类号： H01L47/005 , H01L47/026

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